CN104253025B - 消隐装置、绘制装置和物品的制造方法 - Google Patents

消隐装置、绘制装置和物品的制造方法 Download PDF

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Publication number
CN104253025B
CN104253025B CN201410282732.4A CN201410282732A CN104253025B CN 104253025 B CN104253025 B CN 104253025B CN 201410282732 A CN201410282732 A CN 201410282732A CN 104253025 B CN104253025 B CN 104253025B
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CN
China
Prior art keywords
charged particle
bit
target
substrate
blanking interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410282732.4A
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English (en)
Chinese (zh)
Other versions
CN104253025A (zh
Inventor
森田知之
村木真人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN104253025A publication Critical patent/CN104253025A/zh
Application granted granted Critical
Publication of CN104253025B publication Critical patent/CN104253025B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
CN201410282732.4A 2013-06-26 2014-06-23 消隐装置、绘制装置和物品的制造方法 Active CN104253025B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法
JP2013-134212 2013-06-26

Publications (2)

Publication Number Publication Date
CN104253025A CN104253025A (zh) 2014-12-31
CN104253025B true CN104253025B (zh) 2017-07-07

Family

ID=52114667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410282732.4A Active CN104253025B (zh) 2013-06-26 2014-06-23 消隐装置、绘制装置和物品的制造方法

Country Status (5)

Country Link
US (1) US9040935B2 (enExample)
JP (1) JP6212299B2 (enExample)
KR (1) KR101833094B1 (enExample)
CN (1) CN104253025B (enExample)
TW (1) TWI552196B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP2015070213A (ja) * 2013-09-30 2015-04-13 キヤノン株式会社 描画装置、および物品の製造方法
KR102358009B1 (ko) 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6804389B2 (ja) * 2017-05-30 2020-12-23 株式会社ニューフレアテクノロジー 描画装置および描画方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
CN102216849A (zh) * 2008-09-23 2011-10-12 派因布鲁克成像系统公司 光学成像写入系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4220209B2 (ja) * 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007019243A (ja) * 2005-07-07 2007-01-25 Canon Inc 電子ビーム装置及びデバイス製造方法
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
JP5832141B2 (ja) * 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
CN102216849A (zh) * 2008-09-23 2011-10-12 派因布鲁克成像系统公司 光学成像写入系统

Also Published As

Publication number Publication date
KR20150001631A (ko) 2015-01-06
JP6212299B2 (ja) 2017-10-11
TWI552196B (zh) 2016-10-01
US20150001417A1 (en) 2015-01-01
US9040935B2 (en) 2015-05-26
JP2015012036A (ja) 2015-01-19
CN104253025A (zh) 2014-12-31
KR101833094B1 (ko) 2018-02-27
TW201503231A (zh) 2015-01-16

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