KR101829639B1 - 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 - Google Patents

안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 Download PDF

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Publication number
KR101829639B1
KR101829639B1 KR1020120021967A KR20120021967A KR101829639B1 KR 101829639 B1 KR101829639 B1 KR 101829639B1 KR 1020120021967 A KR1020120021967 A KR 1020120021967A KR 20120021967 A KR20120021967 A KR 20120021967A KR 101829639 B1 KR101829639 B1 KR 101829639B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
weight
polishing composition
acid
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020120021967A
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English (en)
Korean (ko)
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KR20120100820A (ko
Inventor
하메드 라크로우트
진지에 씨
조셉 레티지아
리쑤
토마스 에이치. 칼란타르
프란시스 켈리
제이. 키스 헤리스
크리스토퍼 제이. 터커
Original Assignee
다우 글로벌 테크놀로지스 엘엘씨
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication date
Application filed by 다우 글로벌 테크놀로지스 엘엘씨, 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 다우 글로벌 테크놀로지스 엘엘씨
Publication of KR20120100820A publication Critical patent/KR20120100820A/ko
Application granted granted Critical
Publication of KR101829639B1 publication Critical patent/KR101829639B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020120021967A 2011-03-03 2012-03-02 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 Expired - Fee Related KR101829639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/039,705 2011-03-03
US13/039,705 US8440097B2 (en) 2011-03-03 2011-03-03 Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Publications (2)

Publication Number Publication Date
KR20120100820A KR20120100820A (ko) 2012-09-12
KR101829639B1 true KR101829639B1 (ko) 2018-03-29

Family

ID=46671507

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120021967A Expired - Fee Related KR101829639B1 (ko) 2011-03-03 2012-03-02 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물

Country Status (7)

Country Link
US (1) US8440097B2 (https=)
JP (1) JP6118501B2 (https=)
KR (1) KR101829639B1 (https=)
CN (1) CN102690609B (https=)
DE (1) DE102012004219A1 (https=)
FR (1) FR2972195B1 (https=)
TW (1) TWI602909B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210053082A (ko) * 2019-11-01 2021-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8545715B1 (en) * 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
CN110431209B (zh) * 2017-03-14 2022-06-28 福吉米株式会社 研磨用组合物、其制造方法以及使用其的研磨方法及基板的制造方法
WO2018217628A1 (en) 2017-05-25 2018-11-29 Fujifilm Planar Solutions, LLC Chemical mechanical polishing slurry for cobalt applications
TWI896724B (zh) * 2020-09-29 2025-09-11 日商福吉米股份有限公司 研磨用組成物及其製造方法、研磨方法以及基板的製造方法

Citations (3)

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JP2001077063A (ja) * 1999-09-07 2001-03-23 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨液及びこれを用いた研磨方法
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2009256184A (ja) * 2008-03-24 2009-11-05 Adeka Corp 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物

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SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
TW584658B (en) 2001-04-12 2004-04-21 Rodel Inc Polishing composition having a surfactant
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
US20060000808A1 (en) * 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7824568B2 (en) 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200920828A (en) * 2007-09-20 2009-05-16 Fujifilm Corp Polishing slurry for metal and chemical mechanical polishing method
US20090215266A1 (en) 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9633865B2 (en) * 2008-02-22 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-stain polishing composition
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077063A (ja) * 1999-09-07 2001-03-23 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨液及びこれを用いた研磨方法
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2009256184A (ja) * 2008-03-24 2009-11-05 Adeka Corp 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210053082A (ko) * 2019-11-01 2021-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
KR102570805B1 (ko) 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법

Also Published As

Publication number Publication date
KR20120100820A (ko) 2012-09-12
CN102690609B (zh) 2014-11-26
DE102012004219A1 (de) 2012-09-06
FR2972195B1 (fr) 2015-08-28
CN102690609A (zh) 2012-09-26
TW201302997A (zh) 2013-01-16
JP2012199531A (ja) 2012-10-18
US8440097B2 (en) 2013-05-14
FR2972195A1 (fr) 2012-09-07
US20120225556A1 (en) 2012-09-06
TWI602909B (zh) 2017-10-21
JP6118501B2 (ja) 2017-04-19

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