KR101820554B1 - ｐ-도핑된 실리콘층 - Google Patents

ｐ-도핑된 실리콘층 Download PDF

Info

Publication number
KR101820554B1
KR101820554B1 KR1020137008442A KR20137008442A KR101820554B1 KR 101820554 B1 KR101820554 B1 KR 101820554B1 KR 1020137008442 A KR1020137008442 A KR 1020137008442A KR 20137008442 A KR20137008442 A KR 20137008442A KR 101820554 B1 KR101820554 B1 KR 101820554B1
Authority
KR
South Korea
Prior art keywords
compound
silicon
group
substrate
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020137008442A
Other languages
English (en)
Korean (ko)
Other versions
KR20130103523A (ko
Inventor
스테판 비버
매티아스 파쯔
하랄드 스튀게르
자스민 렘쿨
Original Assignee
에보니크 데구사 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에보니크 데구사 게엠베하 filed Critical 에보니크 데구사 게엠베하
Publication of KR20130103523A publication Critical patent/KR20130103523A/ko
Application granted granted Critical
Publication of KR101820554B1 publication Critical patent/KR101820554B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
KR1020137008442A 2010-09-03 2011-08-19 ｐ-도핑된 실리콘층 Expired - Fee Related KR101820554B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010040231.1 2010-09-03
DE102010040231A DE102010040231A1 (de) 2010-09-03 2010-09-03 p-Dotierte Siliciumschichten
PCT/EP2011/064279 WO2012028476A1 (de) 2010-09-03 2011-08-19 P-dotierte siliciumschichten

Publications (2)

Publication Number Publication Date
KR20130103523A KR20130103523A (ko) 2013-09-23
KR101820554B1 true KR101820554B1 (ko) 2018-01-19

Family

ID=44651674

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137008442A Expired - Fee Related KR101820554B1 (ko) 2010-09-03 2011-08-19 ｐ-도핑된 실리콘층

Country Status (10)

Country Link
US (1) US9362112B2 (https=)
EP (2) EP2991102A1 (https=)
JP (1) JP6099563B2 (https=)
KR (1) KR101820554B1 (https=)
CN (1) CN103069544B (https=)
DE (1) DE102010040231A1 (https=)
ES (1) ES2655491T3 (https=)
MY (1) MY158420A (https=)
TW (1) TWI605492B (https=)
WO (1) WO2012028476A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2135844A1 (de) 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
DE102009048087A1 (de) 2009-10-02 2011-04-07 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilane
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009053805A1 (de) 2009-11-18 2011-05-26 Evonik Degussa Gmbh Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen
DE102009053806A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Verfahren zur Herstellung von Siliciumschichten
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102012221669A1 (de) 2012-11-27 2014-05-28 Evonik Industries Ag Verfahren zum Herstellen kohlenstoffhaltiger Hydridosilane
DE102014208054A1 (de) * 2014-04-29 2015-10-29 Evonik Degussa Gmbh Verfahren zur Erzeugung unterschiedlich dotierter Halbleiter
DE102014223465A1 (de) * 2014-11-18 2016-05-19 Evonik Degussa Gmbh Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten
DE102015225289A1 (de) 2015-12-15 2017-06-22 Evonik Degussa Gmbh Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
US11649560B2 (en) * 2019-06-20 2023-05-16 Applied Materials, Inc. Method for forming silicon-phosphorous materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031066A (ja) * 1998-07-10 2000-01-28 Sharp Corp シリコン膜の形成方法及び太陽電池の製造方法
JP2007022959A (ja) 2005-07-15 2007-02-01 Jsr Corp 新規芳香族化合物、スルホン化ポリアリーレンおよびその用途
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490192A (en) * 1983-06-08 1984-12-25 Allied Corporation Stable suspensions of boron, phosphorus, antimony and arsenic dopants
US5399780A (en) * 1992-11-02 1995-03-21 Tosoh Akzo Corporation Method of producing triarylborane
US5866471A (en) 1995-12-26 1999-02-02 Kabushiki Kaisha Toshiba Method of forming semiconductor thin film and method of fabricating solar cell
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
TW539709B (en) * 1999-03-30 2003-07-01 Jsr Corp Coating composition
DE60039744D1 (de) * 1999-03-30 2008-09-18 Seiko Epson Corp Verfahren zur Hersltellung einer Siliziumschicht
CN1223011C (zh) 1999-03-30 2005-10-12 精工爱普生株式会社 太阳能电池的制造方法
JP4193017B2 (ja) 2000-09-26 2008-12-10 Ｊｓｒ株式会社 ホウ素でドープされたシリコン膜の形成方法
JP2003171556A (ja) * 2001-12-10 2003-06-20 Jsr Corp シリコン膜の形成方法およびそのための組成物
EP1284306B1 (en) * 2001-08-14 2011-08-03 JSR Corporation Silane composition, silicon film forming method and solar cell production method
JP2003313299A (ja) * 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
EP1640342A4 (en) 2003-06-13 2006-11-22 Jsr Corp SILANEPOLYMER AND METHOD FOR FORMING SILICON FILM
JP2005223268A (ja) * 2004-02-09 2005-08-18 Seiko Epson Corp 薄膜トランジスタの製造方法、ディスプレイの製造方法及びディスプレイ
US7071125B2 (en) * 2004-09-22 2006-07-04 Intel Corporation Precursors for film formation
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
JP2006156582A (ja) * 2004-11-26 2006-06-15 Kyocera Corp 半導体部品および光電変換装置
WO2008045327A2 (en) * 2006-10-06 2008-04-17 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
US7892872B2 (en) 2007-01-03 2011-02-22 Nanogram Corporation Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
US20090203197A1 (en) * 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
WO2009148878A2 (en) * 2008-05-29 2009-12-10 Ndsu Research Foundation Method of forming functionalized silanes
EP2135844A1 (de) 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
JP2010135579A (ja) * 2008-12-05 2010-06-17 Seiko Epson Corp ドープシリコン膜の形成方法
JP2010183011A (ja) * 2009-02-09 2010-08-19 Seiko Epson Corp ドープシリコン膜の製造方法、ドープシリコン前駆体の製造方法およびデバイスの製造方法
DE102009048087A1 (de) 2009-10-02 2011-04-07 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilane
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009053805A1 (de) * 2009-11-18 2011-05-26 Evonik Degussa Gmbh Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen
DE102009053806A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Verfahren zur Herstellung von Siliciumschichten
US20120318662A1 (en) * 2009-12-24 2012-12-20 Nissan Chemical Industries, Ltd. Method for forming bond between different elements
US8624049B2 (en) * 2010-01-18 2014-01-07 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US8975429B2 (en) * 2010-01-28 2015-03-10 Ndsu Research Foundation Method of producing cyclohexasilane compounds
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
DE102010049587A1 (de) 2010-10-26 2012-04-26 Evonik Degussa Gmbh Verfahren zur elektrochemischen Wasserstoffpassivierung von Halbleiterschichten
DE102010053214A1 (de) 2010-12-03 2012-06-06 Evonik Degussa Gmbh Verfahren zur Wasserstoffpassivierung von Halbleiterschichten
DE102010062383A1 (de) 2010-12-03 2012-06-06 Evonik Degussa Gmbh Verfahren zum Konvertieren von Halbleiterschichten
DE102010062386B4 (de) 2010-12-03 2014-10-09 Evonik Degussa Gmbh Verfahren zum Konvertieren von Halbleiterschichten, derartig hergestellte Halbleiterschichten sowie derartige Halbleiterschichten umfassende elektronische und optoelektronische Erzeugnisse
DE102010062984A1 (de) 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102011006307A1 (de) 2011-03-29 2012-10-04 Evonik Degussa Gmbh Verfahren zum Herstellen von amorphen Halbleiterschichten

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031066A (ja) * 1998-07-10 2000-01-28 Sharp Corp シリコン膜の形成方法及び太陽電池の製造方法
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
JP2007022959A (ja) 2005-07-15 2007-02-01 Jsr Corp 新規芳香族化合物、スルホン化ポリアリーレンおよびその用途

Also Published As

Publication number Publication date
WO2012028476A1 (de) 2012-03-08
EP2612348A1 (de) 2013-07-10
ES2655491T3 (es) 2018-02-20
KR20130103523A (ko) 2013-09-23
JP6099563B2 (ja) 2017-03-22
TW201232612A (en) 2012-08-01
US20130168824A1 (en) 2013-07-04
MY158420A (en) 2016-10-14
JP2013538454A (ja) 2013-10-10
CN103069544A (zh) 2013-04-24
TWI605492B (zh) 2017-11-11
US9362112B2 (en) 2016-06-07
EP2991102A1 (de) 2016-03-02
DE102010040231A1 (de) 2012-03-08
EP2612348B1 (de) 2017-11-29
CN103069544B (zh) 2016-06-08

Similar Documents

Publication Publication Date Title
KR101820554B1 (ko) ｐ-도핑된 실리콘층
EP3702397B1 (en) Method for the preparation of hydridosilane oligomers
CN105307977B (zh) 包含氢化硅烷和氢化硅烷低聚物的配制品、其制备方法及其用途
JP6012469B2 (ja) シリコン層の製造方法
US10457813B2 (en) Formulations comprising hydridosilanes and hydridosilane oligomers, their process of manufacture and their use
US9464099B2 (en) Method for producing hydrosilanes containing carbon
US10370392B2 (en) Doped hydridosilane compositions, and method for producing same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210116

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210116

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000