KR101782874B1 - 인덱싱된 인라인 기판 처리 툴 - Google Patents

인덱싱된 인라인 기판 처리 툴 Download PDF

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Publication number
KR101782874B1
KR101782874B1 KR1020157012155A KR20157012155A KR101782874B1 KR 101782874 B1 KR101782874 B1 KR 101782874B1 KR 1020157012155 A KR1020157012155 A KR 1020157012155A KR 20157012155 A KR20157012155 A KR 20157012155A KR 101782874 B1 KR101782874 B1 KR 101782874B1
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South Korea
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substrate
modules
module
enclosure
disposed
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English (en)
Korean (ko)
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KR20150066582A (ko
Inventor
데비비드 케이. 칼슨
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/6776—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H01L21/67115—
    • H01L21/67712—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020157012155A 2012-10-09 2013-09-24 인덱싱된 인라인 기판 처리 툴 Expired - Fee Related KR101782874B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261711493P 2012-10-09 2012-10-09
US61/711,493 2012-10-09
US14/034,921 US9406538B2 (en) 2012-10-09 2013-09-24 Indexed inline substrate processing tool
US14/034,921 2013-09-24
PCT/US2013/061404 WO2014058612A1 (en) 2012-10-09 2013-09-24 Indexed inline substrate processing tool

Publications (2)

Publication Number Publication Date
KR20150066582A KR20150066582A (ko) 2015-06-16
KR101782874B1 true KR101782874B1 (ko) 2017-09-28

Family

ID=50432986

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157012155A Expired - Fee Related KR101782874B1 (ko) 2012-10-09 2013-09-24 인덱싱된 인라인 기판 처리 툴

Country Status (6)

Country Link
US (1) US9406538B2 (https=)
JP (1) JP6285446B2 (https=)
KR (1) KR101782874B1 (https=)
CN (1) CN104704624B (https=)
TW (1) TWI592513B (https=)
WO (1) WO2014058612A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106716649A (zh) * 2014-09-19 2017-05-24 应用材料公司 平行板式串联基板处理工具
DE112018007706T5 (de) * 2018-06-08 2021-02-18 Toshiba Mitsubishi-Electric Industrial Systems Corporation Filmausbildungsvorrichtung
CN113874544B (zh) * 2019-05-24 2025-06-27 应用材料公司 用于热处理的设备、基板处理系统、用于在基板处理期间支撑基板的载体、和用于感应加热在基板处理系统中的载体的方法
KR20260011433A (ko) * 2024-07-16 2026-01-23 (주)에스티아이 기판 공정 시스템 및 이를 이용한 기판 공정 방법

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP3806275B2 (ja) * 1999-10-22 2006-08-09 三菱重工業株式会社 分割型トレイレス斜め基板搬送システム
US20100215872A1 (en) * 2009-02-25 2010-08-26 Crystal Solar, Inc. High Throughput Multi-Wafer Epitaxial Reactor

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JPS63303062A (ja) * 1987-06-02 1988-12-09 Nec Corp 半導体集積回路の製造装置
JP2948842B2 (ja) * 1989-11-24 1999-09-13 日本真空技術株式会社 インライン型ｃｖｄ装置
DE4029905C2 (de) * 1990-09-21 1993-10-28 Leybold Ag Vorrichtung für den Transport von Substraten
JPH06151413A (ja) * 1992-11-02 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> 熱処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JP3185493B2 (ja) * 1993-09-07 2001-07-09 日新電機株式会社 薄膜気相成長装置
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
JP2845773B2 (ja) * 1995-04-27 1999-01-13 山形日本電気株式会社 常圧ｃｖｄ装置
US6117266A (en) * 1997-12-19 2000-09-12 Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) Furnace for continuous, high throughput diffusion processes from various diffusion sources
JPH11147787A (ja) * 1997-11-14 1999-06-02 Super Silicon Kenkyusho:Kk エピタキシャル成長炉
WO1999025909A1 (en) * 1997-11-14 1999-05-27 Super Silicon Crystal Research Institute Corp. Epitaxial growth furnace
JP2000177842A (ja) * 1998-12-10 2000-06-27 Mitsubishi Heavy Ind Ltd 搬送装置及び真空処理システム
JP3842935B2 (ja) * 1999-10-22 2006-11-08 三菱重工業株式会社 トレイレス斜め基板搬送装置
JP4335743B2 (ja) * 2004-05-26 2009-09-30 電気化学工業株式会社 成膜装置用の基板回転機構
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
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US20100215872A1 (en) * 2009-02-25 2010-08-26 Crystal Solar, Inc. High Throughput Multi-Wafer Epitaxial Reactor

Also Published As

Publication number Publication date
CN104704624A (zh) 2015-06-10
CN104704624B (zh) 2017-06-09
TW201418517A (zh) 2014-05-16
US9406538B2 (en) 2016-08-02
TWI592513B (zh) 2017-07-21
WO2014058612A1 (en) 2014-04-17
KR20150066582A (ko) 2015-06-16
US20140099778A1 (en) 2014-04-10
JP6285446B2 (ja) 2018-02-28
JP2015533195A (ja) 2015-11-19

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