KR101769073B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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KR101769073B1
KR101769073B1 KR1020150023508A KR20150023508A KR101769073B1 KR 101769073 B1 KR101769073 B1 KR 101769073B1 KR 1020150023508 A KR1020150023508 A KR 1020150023508A KR 20150023508 A KR20150023508 A KR 20150023508A KR 101769073 B1 KR101769073 B1 KR 101769073B1
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South Korea
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frequency power
high frequency
waveform
plasma
frequency bias
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Korean (ko)
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KR20150111275A (ko
Inventor
고지 도요타
고이치 야마모토
나오키 야스이
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
KR1020150023508A 2014-03-25 2015-02-16 플라즈마 처리 장치 Active KR101769073B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-061124 2014-03-25
JP2014061124A JP6295119B2 (ja) 2014-03-25 2014-03-25 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20150111275A KR20150111275A (ko) 2015-10-05
KR101769073B1 true KR101769073B1 (ko) 2017-08-17

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KR1020150023508A Active KR101769073B1 (ko) 2014-03-25 2015-02-16 플라즈마 처리 장치

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US (1) US10037868B2 (enExample)
JP (1) JP6295119B2 (enExample)
KR (1) KR101769073B1 (enExample)
TW (1) TWI585815B (enExample)

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JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6491888B2 (ja) * 2015-01-19 2019-03-27 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US9754769B2 (en) * 2015-09-15 2017-09-05 Lam Research Corporation Metrology methods to detect plasma in wafer cavity and use of the metrology for station-to-station and tool-to-tool matching
JP6523989B2 (ja) * 2016-02-19 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理方法及びプラズマ処理装置
US12176184B2 (en) * 2017-11-17 2024-12-24 Advanced Energy Industries, Inc. Synchronization of bias supplies
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
JP2020181650A (ja) * 2019-04-23 2020-11-05 東京エレクトロン株式会社 補正関数を決定する方法
CN113272939B (zh) * 2019-12-17 2023-11-14 株式会社日立高新技术 等离子体处理装置以及等离子体处理装置的工作方法
JP7437981B2 (ja) * 2020-03-06 2024-02-26 東京エレクトロン株式会社 プラズマ処理装置
JP7291091B2 (ja) * 2020-03-16 2023-06-14 株式会社京三製作所 高周波電源装置及びその出力制御方法
CN111370286B (zh) * 2020-03-24 2023-02-07 中国科学院近代物理研究所 一种用于治疗装备的等离子体源及其使用方法
KR102437091B1 (ko) * 2020-08-14 2022-08-26 한국기계연구원 플라즈마 화학기상증착 공정의 실시간 제어 방법 및 플라즈마 화학기상증착용 반응 챔버
JP2023546961A (ja) * 2020-10-26 2023-11-08 ラム リサーチ コーポレーション Ｒｆパルス化スキームの同期及びセンサデータ収集の同期
TW202225438A (zh) * 2020-11-25 2022-07-01 美商應用材料股份有限公司 脈衝pvd功率之波形形狀因子
TW202336803A (zh) * 2021-11-19 2023-09-16 日商東京威力科創股份有限公司 電漿處理裝置、控制方法、電源系統、程式及記憶媒體
US12131884B2 (en) * 2022-01-12 2024-10-29 Mks Instruments, Inc. Pulse and bias synchronization methods and systems

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2009064814A (ja) * 2007-09-04 2009-03-26 Hitachi High-Technologies Corp プラズマ処理装置
JP2012060104A (ja) 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
JP2014022482A (ja) * 2012-07-17 2014-02-03 Hitachi High-Technologies Corp プラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565774B2 (ja) 2000-09-12 2004-09-15 株式会社日立製作所 プラズマ処理装置及び処理方法
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US7750645B2 (en) * 2007-08-15 2010-07-06 Applied Materials, Inc. Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
US8324525B2 (en) * 2008-05-29 2012-12-04 Applied Materials, Inc. Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator
US8337661B2 (en) * 2008-05-29 2012-12-25 Applied Materials, Inc. Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
JP5867701B2 (ja) * 2011-12-15 2016-02-24 東京エレクトロン株式会社 プラズマ処理装置
JP5808012B2 (ja) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
JP5921964B2 (ja) * 2012-06-11 2016-05-24 東京エレクトロン株式会社 プラズマ処理装置及びプローブ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009064814A (ja) * 2007-09-04 2009-03-26 Hitachi High-Technologies Corp プラズマ処理装置
JP2012060104A (ja) 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
JP2014022482A (ja) * 2012-07-17 2014-02-03 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
TWI585815B (zh) 2017-06-01
JP2015185698A (ja) 2015-10-22
TW201537612A (zh) 2015-10-01
US10037868B2 (en) 2018-07-31
JP6295119B2 (ja) 2018-03-14
KR20150111275A (ko) 2015-10-05
US20150279624A1 (en) 2015-10-01

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