KR101762368B1 - 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 - Google Patents

얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 Download PDF

Info

Publication number
KR101762368B1
KR101762368B1 KR1020127016290A KR20127016290A KR101762368B1 KR 101762368 B1 KR101762368 B1 KR 101762368B1 KR 1020127016290 A KR1020127016290 A KR 1020127016290A KR 20127016290 A KR20127016290 A KR 20127016290A KR 101762368 B1 KR101762368 B1 KR 101762368B1
Authority
KR
South Korea
Prior art keywords
type region
iii nitride
transparent conductive
layer
nitride material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127016290A
Other languages
English (en)
Korean (ko)
Other versions
KR20120094502A (ko
Inventor
프레데릭 듀퐁
존 이. 에플러
Original Assignee
코닌클리케 필립스 엔.브이.
루미레즈 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리케 필립스 엔.브이., 루미레즈 엘엘씨 filed Critical 코닌클리케 필립스 엔.브이.
Publication of KR20120094502A publication Critical patent/KR20120094502A/ko
Application granted granted Critical
Publication of KR101762368B1 publication Critical patent/KR101762368B1/ko
Assigned to 루미리즈 홀딩 비.브이. reassignment 루미리즈 홀딩 비.브이. 권리의 전부이전등록 Assignors: 루미레즈 엘엘씨, 코닌클리케 필립스 엔.브이.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020127016290A 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스 Active KR101762368B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/624,268 US8581229B2 (en) 2009-11-23 2009-11-23 III-V light emitting device with thin n-type region
US12/624,268 2009-11-23
PCT/IB2010/055147 WO2011061664A1 (en) 2009-11-23 2010-11-12 Iii-v light emitting device with thin n-type region

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177020575A Division KR101905590B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스

Publications (2)

Publication Number Publication Date
KR20120094502A KR20120094502A (ko) 2012-08-24
KR101762368B1 true KR101762368B1 (ko) 2017-07-27

Family

ID=43502070

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127016290A Active KR101762368B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스
KR1020177020575A Active KR101905590B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177020575A Active KR101905590B1 (ko) 2009-11-23 2010-11-12 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스

Country Status (7)

Country Link
US (2) US8581229B2 (https=)
EP (1) EP2504868B1 (https=)
JP (1) JP5674806B2 (https=)
KR (2) KR101762368B1 (https=)
CN (1) CN102714255B (https=)
TW (1) TWI523258B (https=)
WO (1) WO2011061664A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
KR20120099318A (ko) * 2011-01-26 2012-09-10 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR102082499B1 (ko) 2011-08-26 2020-02-27 루미리즈 홀딩 비.브이. 반도체 구조를 프로세싱하는 방법
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
US9728458B2 (en) 2012-07-31 2017-08-08 Soitec Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures
US9653647B2 (en) 2013-06-14 2017-05-16 Micron Technology, Inc. Ultrathin solid state dies and methods of manufacturing the same
EP3127143A4 (en) * 2014-03-31 2017-11-29 Nanyang Technological University Methods of recycling substrates and carrier substrates
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
CN111933765B (zh) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 微型发光二极管及制作方法，微型led显示模块及制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012188A (ja) * 2003-05-22 2005-01-13 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3757544B2 (ja) * 1997-05-21 2006-03-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
WO2002056394A1 (en) 2001-01-09 2002-07-18 Emcore Corporation Electrode structures for p-type nitride semiconductores and mehtods of making same
JP3896027B2 (ja) 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US7880182B2 (en) * 2002-07-15 2011-02-01 Epistar Corporation Light-emitting element array
TWI249148B (en) * 2004-04-13 2006-02-11 Epistar Corp Light-emitting device array having binding layer
JP4135567B2 (ja) * 2003-06-10 2008-08-20 松下電器産業株式会社 キャップ取り外し装置
US20050173724A1 (en) 2004-02-11 2005-08-11 Heng Liu Group III-nitride based LED having a transparent current spreading layer
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
TWM255518U (en) * 2004-04-23 2005-01-11 Super Nova Optoelectronics Cor Vertical electrode structure of Gallium Nitride based LED
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
US8334155B2 (en) 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
JP5232970B2 (ja) * 2006-04-13 2013-07-10 豊田合成株式会社 半導体発光素子の製造方法及び半導体発光素子とそれを備えたランプ
JP4929924B2 (ja) * 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US7951693B2 (en) 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US8704254B2 (en) * 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
TWI331411B (en) * 2006-12-29 2010-10-01 Epistar Corp High efficiency light-emitting diode and method for manufacturing the same
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
US20090050905A1 (en) * 2007-08-20 2009-02-26 Abu-Ageel Nayef M Highly Efficient Light-Emitting Diode
US20090140279A1 (en) 2007-12-03 2009-06-04 Goldeneye, Inc. Substrate-free light emitting diode chip
KR101025948B1 (ko) 2007-12-21 2011-03-30 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7939839B2 (en) * 2008-09-11 2011-05-10 Bridgelux, Inc. Series connected segmented LED
US9117944B2 (en) * 2008-09-24 2015-08-25 Koninklijke Philips N.V. Semiconductor light emitting devices grown on composite substrates
US8089091B2 (en) * 2009-06-18 2012-01-03 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with a contact formed on a textured surface
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005012188A (ja) * 2003-05-22 2005-01-13 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2008053425A (ja) * 2006-08-24 2008-03-06 Matsushita Electric Ind Co Ltd 半導体発光装置

Also Published As

Publication number Publication date
KR101905590B1 (ko) 2018-10-10
KR20120094502A (ko) 2012-08-24
JP5674806B2 (ja) 2015-02-25
US8878160B2 (en) 2014-11-04
EP2504868B1 (en) 2018-05-16
TW201125161A (en) 2011-07-16
WO2011061664A1 (en) 2011-05-26
US8581229B2 (en) 2013-11-12
TWI523258B (zh) 2016-02-21
CN102714255B (zh) 2015-10-21
CN102714255A (zh) 2012-10-03
EP2504868A1 (en) 2012-10-03
US20140034990A1 (en) 2014-02-06
JP2013511853A (ja) 2013-04-04
US20110121332A1 (en) 2011-05-26
KR20170098304A (ko) 2017-08-29

Similar Documents

Publication Publication Date Title
KR101762368B1 (ko) 얇은 ｎ-형 영역을 갖는 ⅲ-ｖ족 발광 디바이스
KR101799716B1 (ko) 복합 기판 상에 성장되는 반도체 발광 장치
KR101894691B1 (ko) 복합 기판의 형성 및 복합 기판 상 ⅲ-ⅴ족 발광 장치 성장 방법
US10103301B2 (en) Semiconductor light emitting device
JP6535598B2 (ja) フィルタ及び保護層を含む発光デバイス
TW201933632A (zh) 照明結構及製造發光裝置之方法
US20110177638A1 (en) Semiconductor light emitting device with curvature control layer
CN102484178A (zh) 具有曲率控制层的iii族氮化物发光装置
CN102884643B (zh) 生长在松弛层上的iii族氮化物发光装置
US8257989B2 (en) Contact for a semiconductor light emitting device
US8574938B2 (en) Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
US20130023073A1 (en) Using non-isolated epitaxial structures in glue bonding for multiple group-iii nitride leds on a single substrate
KR101810711B1 (ko) 반도체 소자를 성장시키기 위한 복합 성장 기판
WO2013084155A1 (en) Forming thick metal layers on a semiconductor light emitting device

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
GRNT Written decision to grant
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20200708

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20210702

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20220701

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 9