KR101761401B1 - 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치 - Google Patents

음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치 Download PDF

Info

Publication number
KR101761401B1
KR101761401B1 KR1020097013819A KR20097013819A KR101761401B1 KR 101761401 B1 KR101761401 B1 KR 101761401B1 KR 1020097013819 A KR1020097013819 A KR 1020097013819A KR 20097013819 A KR20097013819 A KR 20097013819A KR 101761401 B1 KR101761401 B1 KR 101761401B1
Authority
KR
South Korea
Prior art keywords
substrate surface
collimator
plate
delete delete
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097013819A
Other languages
English (en)
Korean (ko)
Other versions
KR20090096617A (ko
Inventor
하르트무트 로어만
한스페테르 프리드리
유르겐 베이카르트
스타니슬라프 캐들렉
마르틴 둡스
Original Assignee
에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 filed Critical 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트
Publication of KR20090096617A publication Critical patent/KR20090096617A/ko
Application granted granted Critical
Publication of KR101761401B1 publication Critical patent/KR101761401B1/ko
Assigned to 에바텍 아크티엔게젤샤프트 reassignment 에바텍 아크티엔게젤샤프트 권리의 전부이전등록 Assignors: 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1020097013819A 2007-01-02 2007-12-24 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치 Active KR101761401B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88308607P 2007-01-02 2007-01-02
US60/883,086 2007-01-02
PCT/CH2007/000647 WO2008080244A1 (de) 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens

Publications (2)

Publication Number Publication Date
KR20090096617A KR20090096617A (ko) 2009-09-11
KR101761401B1 true KR101761401B1 (ko) 2017-07-25

Family

ID=39144429

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097013819A Active KR101761401B1 (ko) 2007-01-02 2007-12-24 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치

Country Status (7)

Country Link
US (1) US9587306B2 (https=)
EP (2) EP2463401B1 (https=)
JP (1) JP5185285B2 (https=)
KR (1) KR101761401B1 (https=)
CN (2) CN101627146A (https=)
TW (1) TWI457453B (https=)
WO (1) WO2008080244A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103109344B (zh) * 2010-07-09 2016-02-10 欧瑞康先进科技股份公司 磁控管溅射设备
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
DE102014108348A1 (de) 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
US10541663B2 (en) * 2015-10-14 2020-01-21 Qorvo Us, Inc. Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures
US10866216B2 (en) 2015-12-15 2020-12-15 Qorvo Biotechnologies, Llc Temperature compensation and operational configuration for bulk acoustic wave resonator devices
JP2020517832A (ja) * 2017-04-27 2020-06-18 エヴァテック・アーゲー 軟磁性多層堆積装置、製造の方法、および磁性多層体
US11476099B2 (en) 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US11824511B2 (en) 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019745A1 (en) * 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR970003828B1 (ko) * 1993-12-15 1997-03-22 현대전자산업 주식회사 콜리메이터
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
JPH07335553A (ja) * 1994-06-08 1995-12-22 Tel Varian Ltd 処理装置および処理方法
JP3545050B2 (ja) * 1994-06-28 2004-07-21 株式会社アルバック スパッタリング装置、及びスパッタリング薄膜生産方法
US5616218A (en) * 1994-09-12 1997-04-01 Matereials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5650052A (en) 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
JPH11200029A (ja) * 1998-01-13 1999-07-27 Victor Co Of Japan Ltd スパッタリング装置
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
EP1297542B1 (de) 2000-07-06 2013-02-20 OC Oerlikon Balzers AG Anordnung zur ausrichtung der magnetisierungsrichtung magnetischer schichten
JP2003073825A (ja) 2001-08-30 2003-03-12 Anelva Corp 薄膜作成装置
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
DE102006003847B4 (de) 2006-01-26 2011-08-18 Siemens AG, 80333 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat
JP4673779B2 (ja) * 2006-03-24 2011-04-20 ダブリュディ・メディア・シンガポール・プライベートリミテッド 磁気記録媒体の製造方法及び成膜装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019745A1 (en) * 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus

Also Published As

Publication number Publication date
EP2106457A1 (de) 2009-10-07
CN102747330B (zh) 2015-01-28
JP5185285B2 (ja) 2013-04-17
TWI457453B (zh) 2014-10-21
TW200848533A (en) 2008-12-16
US20090134011A1 (en) 2009-05-28
CN101627146A (zh) 2010-01-13
JP2010514940A (ja) 2010-05-06
EP2463401B1 (de) 2013-07-24
WO2008080244A1 (de) 2008-07-10
EP2463401A1 (de) 2012-06-13
US9587306B2 (en) 2017-03-07
KR20090096617A (ko) 2009-09-11
CN102747330A (zh) 2012-10-24

Similar Documents

Publication Publication Date Title
KR101761401B1 (ko) 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치
JP3151445B2 (ja) イオン・ビーム・スパッタ付着システム及び磁気抵抗センサ構築方法
CN101855381B (zh) 溅射设备和膜沉积方法
US6730197B2 (en) Oblique deposition apparatus
CN103109344B (zh) 磁控管溅射设备
JP5933560B2 (ja) 基板を被覆する装置および方法ならびにターゲット
WO2010073711A1 (ja) スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
US20130186746A1 (en) Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films
JP2006052461A (ja) マグネトロンスパッタリング装置、円筒陰極、及び薄い複合膜を基板上に成膜する方法
US6716322B1 (en) Method and apparatus for controlling film profiles on topographic features
JP2010144247A (ja) スパッタリング装置および成膜方法
US20050066897A1 (en) System, method and aperture for oblique deposition
CN101842512A (zh) 溅射设备和成膜方法
US20050067272A1 (en) System method and collimator for oblique deposition
KR101686318B1 (ko) 스퍼터링을 이용한 전자파 차단 차폐막 형성 방법 및 그 장치
US6482301B1 (en) Target shields for improved magnetic properties of a recording medium
US7297422B2 (en) Method for sputtering magnetic recording media
JP2864594B2 (ja) 磁気記録媒体
WO2005040449A1 (en) System, method and aperture for oblique deposition
WO2005041172A1 (en) System, method and collimator for oblique deposition
JPS61291968A (ja) スパツタリング用タ−ゲツト
JPS61204374A (ja) 蒸着方法ならびに蒸着装置
JP2005008943A (ja) スパッタリング用ターゲット、および前記ターゲットを用いた磁気記録媒体の製造方法
JPH0562173A (ja) 磁気デイスクの製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B90T Transfer of trial file for re-examination
PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

T16-X000 Administrative procedure resumed

St.27 status event code: U-3-3-T10-T16-oth-X000

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20140730

Effective date: 20151126

Free format text: TRIAL NUMBER: 2014101004787; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20140730

Effective date: 20151126

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20151126

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2009 7013819

Appeal request date: 20140730

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2014101004787

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

PS0601 Decision to reject again after remand of revocation

St.27 status event code: N-3-6-B10-B17-rex-PS0601

S601 Decision to reject again after remand of revocation
T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL NUMBER: 2016101003782; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20160627

Effective date: 20170131

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20170131

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2009 7013819

Appeal request date: 20160627

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2016101003782

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000