KR101759689B1 - 절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법 - Google Patents

절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법 Download PDF

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KR101759689B1
KR101759689B1 KR1020167009373A KR20167009373A KR101759689B1 KR 101759689 B1 KR101759689 B1 KR 101759689B1 KR 1020167009373 A KR1020167009373 A KR 1020167009373A KR 20167009373 A KR20167009373 A KR 20167009373A KR 101759689 B1 KR101759689 B1 KR 101759689B1
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layer
circuit
insulating layer
semiconductor die
soi structure
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KR20160044591A (ko
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쳉지에 주오
창한 윤
상준 박
치 ? 로
치 šœ 로
마리오 에프. 베레즈
종해 김
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H01L27/0688—
    • H01L21/8238—
    • H01L24/28—
    • H01L24/31—
    • H01L27/0826—
    • H01L2924/1461—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
KR1020167009373A 2011-11-16 2012-11-16 절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법 Expired - Fee Related KR101759689B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161560471P 2011-11-16 2011-11-16
US61/560,471 2011-11-16
US13/356,717 US9496255B2 (en) 2011-11-16 2012-01-24 Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
US13/356,717 2012-01-24
PCT/US2012/065644 WO2013075007A1 (en) 2011-11-16 2012-11-16 Stacked chipset having an insulating layer and a secondary layer and method of forming same

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KR1020147016198A Division KR20140100526A (ko) 2011-11-16 2012-11-16 절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법

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KR20160044591A KR20160044591A (ko) 2016-04-25
KR101759689B1 true KR101759689B1 (ko) 2017-07-19

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KR1020167009373A Expired - Fee Related KR101759689B1 (ko) 2011-11-16 2012-11-16 절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법
KR1020147016198A Ceased KR20140100526A (ko) 2011-11-16 2012-11-16 절연층 및 보조층을 갖는 적층 칩셋 및 이를 형성하는 방법

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Country Link
US (1) US9496255B2 (https=)
EP (1) EP2780942A1 (https=)
JP (2) JP5937225B2 (https=)
KR (2) KR101759689B1 (https=)
CN (1) CN104054175B (https=)
IN (1) IN2014MN01027A (https=)
WO (1) WO2013075007A1 (https=)

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Also Published As

Publication number Publication date
KR20160044591A (ko) 2016-04-25
WO2013075007A1 (en) 2013-05-23
CN104054175B (zh) 2018-03-06
IN2014MN01027A (https=) 2015-05-01
JP6099794B2 (ja) 2017-03-22
JP2015503228A (ja) 2015-01-29
KR20140100526A (ko) 2014-08-14
JP5937225B2 (ja) 2016-06-22
US9496255B2 (en) 2016-11-15
JP2016174170A (ja) 2016-09-29
EP2780942A1 (en) 2014-09-24
CN104054175A (zh) 2014-09-17
US20130120951A1 (en) 2013-05-16

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