KR101706844B1 - 포토마스크의 제조 방법 및 포토마스크 기판 - Google Patents

포토마스크의 제조 방법 및 포토마스크 기판 Download PDF

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KR101706844B1
KR101706844B1 KR1020150047535A KR20150047535A KR101706844B1 KR 101706844 B1 KR101706844 B1 KR 101706844B1 KR 1020150047535 A KR1020150047535 A KR 1020150047535A KR 20150047535 A KR20150047535 A KR 20150047535A KR 101706844 B1 KR101706844 B1 KR 101706844B1
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South Korea
Prior art keywords
film
thin film
pattern
optical film
etching
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Korean (ko)
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KR20150130909A (ko
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요시히로 우메다
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G03F1/08—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020150047535A 2014-05-14 2015-04-03 포토마스크의 제조 방법 및 포토마스크 기판 Active KR101706844B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-100942 2014-05-14
JP2014100942A JP6298354B2 (ja) 2014-05-14 2014-05-14 フォトマスクの製造方法及びフォトマスク基板

Related Child Applications (1)

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KR1020170002311A Division KR101898796B1 (ko) 2014-05-14 2017-01-06 포토마스크의 제조 방법 및 포토마스크 기판

Publications (2)

Publication Number Publication Date
KR20150130909A KR20150130909A (ko) 2015-11-24
KR101706844B1 true KR101706844B1 (ko) 2017-02-14

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KR1020150047535A Active KR101706844B1 (ko) 2014-05-14 2015-04-03 포토마스크의 제조 방법 및 포토마스크 기판
KR1020170002311A Active KR101898796B1 (ko) 2014-05-14 2017-01-06 포토마스크의 제조 방법 및 포토마스크 기판

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Country Status (4)

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JP (1) JP6298354B2 (enExample)
KR (2) KR101706844B1 (enExample)
CN (1) CN105093819B (enExample)
TW (1) TWI572976B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803172B2 (ja) * 2016-08-19 2020-12-23 株式会社エスケーエレクトロニクス フォトマスクブランクス、それを用いたフォトマスクおよびフォトマスクの製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR102223816B1 (ko) 2018-11-13 2021-03-05 정문성 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2010169750A (ja) 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크

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* Cited by examiner, † Cited by third party
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JPS60118839A (ja) * 1983-11-30 1985-06-26 Hoya Corp フォトマスクの製造方法
JPS60118839U (ja) * 1984-01-19 1985-08-10 星電器製造株式会社 キ−スイツチ
JP3485071B2 (ja) * 1990-12-26 2004-01-13 株式会社ニコン フォトマスク及び製造方法
KR100280035B1 (ko) * 1992-11-27 2001-03-02 기타지마 요시토시 위상쉬프트 포토마스크
JPH08106152A (ja) * 1994-10-06 1996-04-23 Fujitsu Ltd フォトマスク及びその作製方法
JP3037941B2 (ja) * 1997-12-19 2000-05-08 ホーヤ株式会社 ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
JPH11271958A (ja) * 1998-02-06 1999-10-08 Internatl Business Mach Corp <Ibm> 高解像フォトマスクおよびその製造方法
JP2001203424A (ja) * 2000-01-18 2001-07-27 Sharp Corp 半導体素子の製造方法
TW502132B (en) * 2000-08-30 2002-09-11 Toshiba Corp Method for producing photomask
CN1216285C (zh) * 2001-08-10 2005-08-24 Hoya株式会社 灰调掩模缺陷检查方法及装置和光掩模缺陷检查方法及装置
US7390596B2 (en) * 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP2010169749A (ja) * 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、表示デバイスの製造方法、及びフォトマスク基板処理装置
WO2012014904A1 (ja) * 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP5900773B2 (ja) * 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101172698B1 (ko) * 2011-10-17 2012-09-13 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 그의 제조방법
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2010169750A (ja) 2009-01-20 2010-08-05 Hoya Corp フォトマスクの製造方法、及び表示デバイスの製造方法
KR101032705B1 (ko) * 2010-11-16 2011-06-02 주식회사 에스앤에스텍 마스크 블랭크, 마스크 블랭크의 제조 방법 및 포토마스크

Also Published As

Publication number Publication date
KR20150130909A (ko) 2015-11-24
TW201543142A (zh) 2015-11-16
KR101898796B1 (ko) 2018-09-13
KR20170007705A (ko) 2017-01-19
JP6298354B2 (ja) 2018-03-20
JP2015219290A (ja) 2015-12-07
CN105093819B (zh) 2019-05-10
CN105093819A (zh) 2015-11-25
TWI572976B (zh) 2017-03-01

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