KR101702682B1 - 마스크 블랭크 및 전사용 마스크 - Google Patents
마스크 블랭크 및 전사용 마스크 Download PDFInfo
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- KR101702682B1 KR101702682B1 KR1020117027174A KR20117027174A KR101702682B1 KR 101702682 B1 KR101702682 B1 KR 101702682B1 KR 1020117027174 A KR1020117027174 A KR 1020117027174A KR 20117027174 A KR20117027174 A KR 20117027174A KR 101702682 B1 KR101702682 B1 KR 101702682B1
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- 238000004544 sputter deposition Methods 0.000 claims description 30
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 5
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
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- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
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- 229910019974 CrSi Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
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- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009100050 | 2009-04-16 | ||
| JPJP-P-2009-100050 | 2009-04-16 | ||
| PCT/JP2010/056409 WO2010119811A1 (ja) | 2009-04-16 | 2010-04-09 | マスクブランク及び転写用マスク並びに膜緻密性評価方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120057569A KR20120057569A (ko) | 2012-06-05 |
| KR101702682B1 true KR101702682B1 (ko) | 2017-02-06 |
Family
ID=42982473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117027174A Active KR101702682B1 (ko) | 2009-04-16 | 2010-04-09 | 마스크 블랭크 및 전사용 마스크 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8709681B2 (https=) |
| JP (2) | JPWO2010119811A1 (https=) |
| KR (1) | KR101702682B1 (https=) |
| TW (1) | TWI444760B (https=) |
| WO (1) | WO2010119811A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
| JP6335735B2 (ja) * | 2014-09-29 | 2018-05-30 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
| JP6489951B2 (ja) * | 2015-06-12 | 2019-03-27 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
| JP6932552B2 (ja) * | 2017-05-31 | 2021-09-08 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP7332324B2 (ja) * | 2019-04-10 | 2023-08-23 | デクセリアルズ株式会社 | 無機偏光板及びその製造方法、並びに光学機器 |
| JP7801845B2 (ja) * | 2020-09-08 | 2026-01-19 | テクセンドフォトマスク株式会社 | 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100264095B1 (ko) | 1996-08-13 | 2000-08-16 | 다나카 히사노리 | 금속실리사이드 타겟재 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0690508B2 (ja) * | 1987-06-30 | 1994-11-14 | 三菱電機株式会社 | フオトマスク |
| JP4686006B2 (ja) * | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
| JP3608654B2 (ja) * | 2000-09-12 | 2005-01-12 | Ｈｏｙａ株式会社 | 位相シフトマスクブランク、位相シフトマスク |
| JP2002156742A (ja) | 2000-11-20 | 2002-05-31 | Shin Etsu Chem Co Ltd | 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法 |
| JP2002169265A (ja) | 2000-12-01 | 2002-06-14 | Hoya Corp | フォトマスクブランクス及びフォトマスクブランクスの製造方法 |
| ATE524574T1 (de) * | 2001-10-02 | 2011-09-15 | Nat Inst Of Advanced Ind Scien | Verfahren zur herstellung vom dünnen metalloxidfilm |
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| TWI444757B (zh) * | 2006-04-21 | 2014-07-11 | 旭硝子股份有限公司 | 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩 |
| JP2008101246A (ja) * | 2006-10-19 | 2008-05-01 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクを製造する際に使用されるスパッタリングターゲット |
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| WO2008139904A1 (ja) * | 2007-04-27 | 2008-11-20 | Hoya Corporation | フォトマスクブランク及びフォトマスク |
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2010
- 2010-04-09 WO PCT/JP2010/056409 patent/WO2010119811A1/ja not_active Ceased
- 2010-04-09 KR KR1020117027174A patent/KR101702682B1/ko active Active
- 2010-04-09 US US13/264,664 patent/US8709681B2/en active Active
- 2010-04-09 JP JP2011509271A patent/JPWO2010119811A1/ja active Pending
- 2010-04-15 TW TW99111731A patent/TWI444760B/zh active
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2015
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| KR100264095B1 (ko) | 1996-08-13 | 2000-08-16 | 다나카 히사노리 | 금속실리사이드 타겟재 |
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| TWI444760B (zh) | 2014-07-11 |
| JP2015096973A (ja) | 2015-05-21 |
| US20120034434A1 (en) | 2012-02-09 |
| US8709681B2 (en) | 2014-04-29 |
| JPWO2010119811A1 (ja) | 2012-10-22 |
| JP5899558B2 (ja) | 2016-04-06 |
| KR20120057569A (ko) | 2012-06-05 |
| TW201109833A (en) | 2011-03-16 |
| WO2010119811A1 (ja) | 2010-10-21 |
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