KR101679066B1 - Organic Light Emitting Display Device and Fabricating Method thereof - Google Patents

Abstract

An embodiment of the present invention is a liquid crystal display comprising: a first substrate; A transistor located on a first substrate; A cathode located on the transistor and connected to the source or drain of the transistor; A bank layer located on the cathode and exposing a portion of the cathode; An organic light emitting layer positioned on the bank layer; An anode located on the organic light emitting layer; And a first passivation layer formed to cover the anode and made of a transparent metal oxide.

Organic electroluminescence display device, transparent metal oxide, protective film

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting display,

An embodiment of the present invention relates to an organic light emitting display and a method of manufacturing the same.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes located on a substrate.

The organic light emitting display device may be a top emission type, a bottom emission type or a dual emission type depending on a direction in which light is emitted. It is divided into a passive matrix and an active matrix depending on the driving method.

In such an organic light emitting display, when a scan signal, a data signal, a power supply, and the like are supplied to sub-pixels arranged in a matrix form, a selected sub-pixel emits light, thereby displaying an image.

A subpixel of an organic light emitting display includes a transistor located on a substrate and an organic light emitting diode located on the transistor. In the case of organic electroluminescent display devices, the devices formed on the substrate are vulnerable to moisture or oxygen.

Accordingly, conventionally, a protective film is formed to cover subpixels formed on a substrate by a plasma chemical vapor deposition (PECVD) method or a sputtering method. However, in the case of an inverted type in which the organic light emitting diode is formed of the cathode, the organic light emitting layer and the anode, if the protective film is formed by the above method, the organic thin film formed on the lower layer is damaged.

An embodiment of the present invention for solving the problems of the background art described above is an organic electroluminescent device in which a protective film is formed by a thermal deposition method to prevent the organic thin film located at the lower portion of the anode from being damaged, Emitting display device and a method of manufacturing the same. In addition, embodiments of the present invention provide an organic light emitting display device and a method of manufacturing the same that can lower the resistance of a device by electrical contact between a protective film formed on each substrate and an electrode when sealing two substrates together.

According to an embodiment of the present invention, there is provided a semiconductor device comprising: a first substrate; A transistor located on a first substrate; A cathode located on the transistor and connected to the source or drain of the transistor; A bank layer located on the cathode and exposing a portion of the cathode; An organic light emitting layer positioned on the bank layer; An anode located on the organic light emitting layer; And a first passivation layer formed to cover the anode and made of a transparent metal oxide.

And a second protective film which is located on the transparent metal oxide protective film and in which at least one of an oxide system or a nitride system is a single layer or a multilayer.

The transparent metal oxide may be composed of tungsten oxide or molybdenum oxide.

The thickness of the anode can be made thinner than the thickness of the cathode.

The second substrate may further include a bus electrode formed in a region corresponding to a bank layer defining an area of the subpixels.

And a transparent auxiliary electrode formed on the second substrate so as to cover the bus electrode, wherein the transparent auxiliary electrode is in contact with the first protective film.

According to another embodiment of the present invention, there is provided a method of manufacturing a liquid crystal display, comprising: forming subpixels in a matrix form on a first substrate; And forming a first protective layer made of a transparent metal oxide to cover the subpixels by a thermal evaporation method. The present invention also provides a method of manufacturing an organic light emitting display.

Forming a second protective film, which is located on the transparent metal oxide protective film and in which at least one of an oxide system or a nitride system is a single layer or a multilayer.

And a second substrate having a second substrate facing away from the first substrate and sealing the first substrate and the second substrate in a sealed manner, wherein the second substrate includes a bus formed in a region corresponding to a bank layer defining an area of sub- Electrode.

The second substrate may further include a transparent auxiliary electrode formed to cover the bus electrode, and the transparent auxiliary electrode may contact the second protective film.

An embodiment of the present invention provides an inverted organic light emitting display device and a method of manufacturing the same, which can prevent a problem of damaging an organic thin film located under the anode by forming a protective film by a thermal evaporation method It is effective. In addition, an embodiment of the present invention provides an organic electroluminescent display device capable of lowering the resistance of a device by electrical contact between a protective film formed on each substrate and an electrode when sealing two substrates together, and a manufacturing method thereof have.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

≪ Embodiment 1 >

1 is a schematic plan view of an organic light emitting display according to a first embodiment of the present invention.

As shown in FIG. 1, the organic light emitting display according to the first embodiment of the present invention includes a first substrate 110 having a display portion AA on which subpixels SP are disposed. And a first protective layer 130 formed on the first substrate 110 to cover the subpixels SP disposed on the display portion AA and made of a transparent metal oxide. And a driving unit 160 for supplying a driving signal to the elements located on the first substrate 110. And a pad unit 170 connected to the external circuit board to transmit various signals supplied from the outside.

In the case of the first substrate 110, it may be formed of a transparent or non-transparent material. As the material of the first substrate 110, glass, metal, ceramic or plastic (polycarbonate resin, acryl resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, Resin, etc.) and the like.

The subpixels SP may be disposed in a matrix form on the display unit AA defined on the first substrate 110. [ The subpixels SP may be formed into an active matrix type and a passive matrix type according to a driving method. A transistor formed on the first substrate 110 when the subpixels SP are active matrix type, and an organic light emitting diode located on the transistor. Alternatively, the passive matrix type may include an organic light emitting diode other than a transistor.

The driving unit 160 may include a data driver and a scan driver for supplying a data signal and a scan signal to the sub-pixels SP included in the display unit AA. The data driver may supply a horizontal synchronizing signal and an image data signal from the outside and generate a data signal or the like with reference to the horizontal synchronizing signal. The scan driver receives a vertical synchronization signal from the outside, and generates a scan signal and a control signal to be supplied to the sub-pixels SP by referring to the vertical synchronization signal. Here, the data driver and the scan driver included in the driver 160 may be separately disposed on the first substrate 110.

Hereinafter, the organic light emitting display according to the first embodiment of the present invention will be described in more detail with reference to FIGS. 2 and 3. FIG.

FIG. 2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention, and FIG. 3 is a cross-sectional view of an organic light emitting display device according to another embodiment.

Referring to FIG. 2, the organic light emitting display according to the first embodiment of the present invention includes a transistor T formed on a first substrate 110, an organic light emitting diode D connected to a source or a drain of the transistor T, ) Are formed. A first protective layer 130 made of a transparent metal oxide is formed on the subpixels.

The buffer layer 111 may be positioned on the first substrate 110. The buffer layer 111 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the first substrate 110, but may be omitted.

A gate 112 may be located on the buffer layer 111. The gate 112 may be formed as a single layer or multiple layers.

The first insulating layer 113 may be located on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 114 may be located on the first insulating layer 113. The active layer 114 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer for lowering the contact resistance.

On the active layer 114, source drains 115a and 115b may be located. The source drains 115a and 115b may be a single layer or a multilayer.

The second insulating film 116a may be positioned on the source drains 115a and 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

One of the source drains 115a and 115b is located on the second insulating layer 116a and may be connected to a shield metal 118 for preventing interference between the source drains 115a and 115b.

A third insulating layer 116b may be formed on the second insulating layer 116a to increase the flatness. The third insulating film 116b may include an organic material such as polyimide.

In the above description, the transistor T formed on the first substrate 110 is a Bam gate type transistor. However, the transistor T formed on the first substrate 110 may be formed not only as a totem gate type but also a top gate type.

A cathode 117 connected to the source 115a or the drain 115b may be disposed on the third insulating film 116b of the transistor T. [

On the cathode 117, a bank layer 119 having an opening exposing a part of the cathode 117 may be located.

The organic light emitting layer 121 may be positioned on the cathode 117. The organic light emitting layer 121 may be formed to emit light of any one of red, green, and blue depending on subpixels.

The anode 122 may be positioned on the organic light emitting layer 121. The anode 122 may be formed thinner than the cathode 117.

A first protective layer 130 made of a transparent metal oxide may be disposed on the anode 122. The first passivation layer 130 may be formed to cover all the subpixels formed on the first substrate 110. The first protective layer 130 may be formed of a material capable of thermal deposition such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or the like. If the first protective film 130 is formed by a thermal deposition method, the organic thin film located at the bottom can be prevented from being damaged.

Meanwhile, according to another embodiment, as shown in FIG. 3, a second protective layer 135 may be further formed on the first protective layer 130, in which at least one oxide or nitride layer is a single layer or a multilayer. The second protective film 135 may be formed of a single layer or a multi-layer of an oxide type such as tungsten trioxide (WO3), molybdenum trioxide (MoO3) or the like and a nitride type such as silicon nitride (SiNx) The compound may be further intervened.

≪ Embodiment 2 >

FIG. 4 is a cross-sectional view of an organic light emitting display according to a second embodiment of the present invention, and FIG. 5 is a layout diagram of a bus electrode.

4, the organic light emitting display according to the second embodiment of the present invention includes a transistor T formed on a first substrate 210 and an organic light emitting diode D connected to a source or a drain of the transistor T ) Are formed. A first protective film 230 made of a transparent metal oxide is formed on the subpixel. A second protective film 235 is formed on the first protective film 230. The first substrate 210 is sealed and attached to the second substrate 280. A bus electrode 240 is formed on the second substrate 280. A transparent auxiliary electrode 250 is formed on the second substrate 280 so as to cover the bus electrode 240.

A buffer layer 211 may be disposed on the first substrate 210. The buffer layer 211 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the first substrate 210, but may be omitted.

A gate 212 may be located on the buffer layer 211. The gate 212 may be formed as a single layer or a multi-layer.

The first insulating layer 213 may be located on the gate 212. The first insulating layer 213 may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 214 may be located on the first insulating layer 213. The active layer 214 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 214 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 214 may include an ohmic contact layer for lowering the contact resistance.

On the active layer 214, source drains 215a and 215b may be located. The source drains 215a and 215b may be a single layer or a multilayer.

The second insulating film 216a may be positioned on the source drains 215a and 215b. The second insulating layer 216a may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

One of the source drains 215a and 215b is located on the second insulating layer 216a and may be connected to a shield metal 218 for preventing interference between the source drains 215a and 215b.

A third insulating layer 216b may be formed on the second insulating layer 216a to increase the flatness. The third insulating film 216b may include an organic material such as polyimide.

In the above description, the transistor T formed on the first substrate 210 is of the Batam gate type. However, the transistor T formed on the first substrate 210 can be formed not only as a totem gate type but also as a top gate type.

A cathode 217 connected to the source 215a or the drain 215b may be disposed on the third insulating film 216b of the transistor T. [

On the cathode 217, a bank layer 219 having an opening exposing a part of the cathode 217 may be located. The bank layer 219 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin.

The organic light emitting layer 221 may be positioned on the cathode 217. The organic light emitting layer 221 may be formed to emit light of any one of red, green, and blue depending on subpixels.

An anode 222 may be disposed on the organic light emitting layer 221. The anode 222 may be formed thinner than the cathode 217.

A first protective layer 230 made of a transparent metal oxide may be disposed on the anode 222. The first passivation layer 230 may be formed to cover all the subpixels formed on the first substrate 210. The first protective layer 230 may be formed of a material capable of thermal deposition such as tungsten trioxide (WO3), molybdenum trioxide (MoO3), or the like. When the first protective film 230 is formed by the thermal evaporation method, the organic thin film located at the bottom can be prevented from being damaged.

On the second substrate 280, a bank layer 219 defining a subpixel region and a bus electrode 240 formed in a corresponding region may be located. Referring to FIG. 5, the bus electrode 240 is formed in a net shape along the bank layer 219 corresponding to the non-emission region NEA of the subpixels SP. However, the bus electrode 240 may also be formed in a bar shape along the longitudinal direction or the lateral direction of the non-light emitting region NEA.

 A transparent auxiliary electrode 250 formed to cover the bus electrode 240 may be disposed on the second substrate 280. The transparent auxiliary electrode 250 is in contact with the protective film located on the first substrate 210 when the first substrate 210 and the second substrate 280 are integrally sealed. The embodiment is an example in which the transparent auxiliary electrode 250 is in contact with the first protective film 230 formed on the first substrate 210. However, when the second protective film (see FIG. 3) is further formed on the first protective film 230 formed on the first substrate 210, the transparent auxiliary electrode 250 may be in contact with the second protective film. As described above, when the two substrates 210 and 280 are jointly sealed, the resistance of the device can be lowered by the electrical contact between the protective film 230 or 235 formed on the substrate 210 or 280 and the electrode 240 or 250 .

Hereinafter, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention will be described.

FIGS. 6 to 9 are views for explaining a method of manufacturing an organic light emitting display according to an embodiment of the present invention, and FIG. 10 is an example of a hierarchical structure of an organic light emitting diode.

A method of fabricating an organic light emitting display according to an exemplary embodiment of the present invention includes forming a sub-pixel in a matrix form on a first substrate, forming a first protective layer made of a transparent metal oxide .

The transistor T is formed on the first substrate 310 as shown in FIG.

A buffer layer 311 is formed on the first substrate 310. The buffer layer 311 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the first substrate 310, but may be omitted. The buffer layer 311 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

A gate 312 is formed on the buffer layer 311. The gate 312 may be formed of any one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, Or an alloy thereof. The gate 112 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, And may be a multilayer composed of any one selected or an alloy thereof. Also, the gate 312 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

A first insulating film 313 is formed on the gate 312. The first insulating layer 313 may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

An active layer 314 is formed on the first insulating film 313. The active layer 314 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 314 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 314 may comprise an ohmic contact layer for lowering the contact resistance.

Source drains 315a and 315b are formed on the active layer 314. The source drains 315a and 315b may be a single layer or a multilayer and may be formed of a single layer of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au) And may be made of any one selected from the group consisting of titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) When the source drains 315a and 315b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum, or molybdenum / aluminum-neodymium / molybdenum.

A second insulating film 316a is formed on the source drains 315a and 315b. The second insulating film 316a may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto. One of the source drains 315a and 315b is located on the second insulating layer 316a and may be connected to a shield metal 318 for preventing interference between the source drains 115a and 115b.

Next, as shown in FIG. 7, a third insulating film 316b for increasing the flatness is formed on the second insulating film 316a. The third insulating film 316b may include an organic material such as polyimide.

A cathode 317 connected to the source 315a or the drain 315b is formed on the third insulating film 316b. The material of the cathode 317 may be any one of aluminum (Al), aluminum alloy (Al alloy), and aluminum nitride (AlNd), but is not limited thereto. When the lower electrode 317 is selected as the cathode, it is advantageous to form the material of the cathode from a material having high reflectivity.

A bank layer 319 having an opening exposing a part of the cathode 317 is formed on the cathode 317. [ The bank layer 319 may include an organic material such as a benzocyclobutene (BCB) based resin, an acrylic based resin, or a polyimide resin.

And an organic light emitting layer 321 is formed on the cathode 317. The organic light emitting layer 321 may be formed to emit red, green, or blue light depending on the subpixel.

And an anode 322 is formed on the organic light emitting layer 321. [ The anode 322 may be formed of any one of ITO (Indium Tin Oxide), IZO (Indium Tin Zinc Oxide), ITZO (Indium Tin Zinc Oxide), and AZO (ZnO doped Al2O3). The anode 322 may be formed thinner than the cathode 317.

Next, as shown in FIG. 9, a first protective film 330 made of a transparent metal oxide is formed on the anode 322 by a thermal evaporation method. The first passivation layer 330 may be formed to cover all of the subpixels formed on the first substrate 310. The first passivation layer 330 may be formed of a material capable of thermal deposition such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or the like. The material capable of thermal evaporation may also be formed of a compound such as lithium fluoride (LiF). As described above, when the first protective film 330 is formed by the thermal evaporation method, damage to the underlying organic thin film can be prevented.

10, the organic light emitting diode D includes a cathode 317, an electron injection layer 321a, an electron transport layer 321b, a light emission layer 321c, a hole transport layer 321d, a hole injection layer 321e, Lt; RTI ID = 0.0 > 322 < / RTI >

The electron injection layer 321a serves to smooth the injection of electrons and may use Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

The electron transporting layer 321b serves to smooth the transport of electrons and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq But are not limited thereto.

The light emitting layer 321c may include materials that emit red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 321c is red, it includes a host material containing CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl) wherein the dopant comprises at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 321c is green, it may be composed of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 321c is blue, it may include a phosphorescent material including a host material including CBP or mCP and a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

The hole transport layer 321d serves to smooth the transport of holes and includes a hole transport layer 321d made of NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) But is not limited thereto.

The hole injection layer 321e may serve to smooth the injection of holes and may be formed of a material such as cupper phthalocyanine, PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) and NPD (N, -N, N'-diphenyl benzidine), but the present invention is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 10, and at least one of the electron injection layer 321a, the electron transport layer 321b, the hole transport layer 321d, and the hole injection layer 321e may be omitted .

As described above, in the case of manufacturing an inverted organic light emitting display device in which an organic light emitting diode is formed of a cathode, an organic light emitting layer and an anode, a protective film is formed by a thermal evaporation method to form an organic thin film There is an effect that the problem of damage can be prevented. In addition, the embodiment of the present invention has an effect of lowering the resistance of a device by electrical contact between a protective film formed on the first substrate and an electrode formed on the second substrate when the first substrate and the second substrate are sealingly bonded to each other have.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is to be understood, therefore, that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

FIG. 1 is a schematic plan view of an organic light emitting display according to a first embodiment of the present invention. FIG.

2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

3 is a sectional view of an organic light emitting display device according to another embodiment.

4 is a sectional view of an organic light emitting display according to a second embodiment of the present invention.

5 is a layout diagram of a bus electrode.

6 to 9 are views for explaining a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

10 is an exemplary view illustrating a hierarchical structure of an organic light emitting diode;

DESCRIPTION OF THE REFERENCE NUMERALS

110, 210, 310: first substrate 117, 217, 317: cathode

121, 221, 321: organic light emitting layers 122, 222, 322: anode

130, 230, 330: first protective film

Claims (12)

A first substrate; A transistor located on the first substrate; A cathode located on the transistor and connected to a source or a drain of the transistor; A bank layer located on the cathode and exposing a portion of the cathode; An organic light emitting layer disposed on the bank layer; An anode disposed on the organic light emitting layer; A first passivation layer formed to cover the anode and made of tungsten trioxide (WO3) or molybdenum trioxide (MoO3); A second substrate bonded to the first substrate; A bus electrode disposed on one surface of the second substrate corresponding to the bank layer; And And a transparent auxiliary electrode covering the bus electrode, Wherein the transparent auxiliary electrode is in contact with the first protective film. The method according to claim 1, Is located on the first protective film And a second protective film made of a single layer or a multilayer. delete The method according to claim 1, The thickness of the anode, Wherein the thickness of the cathode is less than the thickness of the cathode. delete delete Forming subpixels in a matrix form on a first substrate; Forming a first protective layer made of tungsten trioxide (WO3) or molybdenum trioxide (MoO3) to cover the subpixels by a thermal evaporation method; Forming a bus electrode corresponding to a bank layer having a second substrate and defining a region of the subpixels on one surface of the second substrate; Forming a transparent auxiliary electrode covering the bus electrode on one surface of the second substrate; And And sealing the first substrate and the second substrate together, And the transparent auxiliary electrode is in contact with the first passivation layer. 8. The method of claim 7, Is located on the first protective film And forming a second protective layer made of a single layer or a multi-layer. delete 9. The method of claim 8, And the transparent auxiliary electrode is in contact with the second protective film. 3. The method of claim 2, The second protective film Wherein the organic electroluminescence display device is selected from at least one of tungsten trioxide (WO3), molybdenum trioxide (MoO3), silicon nitride (SiNx), and lithium fluoride (LiF). 9. The method of claim 8, The second protective film Wherein at least one of tungsten trioxide (WO3), molybdenum trioxide (MoO3), silicon nitride (SiNx), and lithium fluoride (LiF) is selected.

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