KR101572259B1 - Manufacturing Method of Organic Light Emitting Display - Google Patents

Abstract

An embodiment of the present invention relates to a method of manufacturing a display device, comprising: forming a subpixel on a substrate; A surface preprocessing step of the subpixel; And forming at least three layers of inorganic protective films so as to have at least one different thickness and density as an inorganic material so as to cover the subpixels.

Organic electroluminescence display device, protective film, inorganic material

Description

[0001] The present invention relates to an organic light emitting display,

An embodiment of the present invention relates to a method of manufacturing an organic light emitting display.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes located on a substrate.

The organic light emitting display may be classified into a top emission type, a bottom emission type, and a dual emission type depending on a direction in which light is emitted. In addition, it can be divided into a passive matrix type and an active matrix type according to a driving method.

In the organic light emitting display, when a scan signal, a data signal, a power supply, and the like are supplied to a plurality of subpixels arranged in a matrix form, the selected subpixel emits light, thereby displaying an image.

A subpixel included in an organic light emitting display is vulnerable to moisture or oxygen. Thus, in the past, a method of performing a sealing process of sealing with a moisture absorbent such as a getter or the like has been proposed, or a method of covering a sub-pixel with a protective film has been proposed.

An embodiment of the present invention for solving the problems of the background art described above is to provide a method of manufacturing an organic electroluminescent display device capable of improving the reliability and lifetime of a device by protecting the device from penetration of outside air.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a subpixel on a substrate; A surface preprocessing step of the subpixel; And forming at least three layers of inorganic protective films so as to have at least one different thickness and density as an inorganic material so as to cover the subpixels.

The inorganic protective film may include a first inorganic protective film located on the subpixel, a second inorganic protective film which is thicker than the first inorganic protective film, and a third inorganic protective film which is thinner than the second inorganic protective film.

At least one of the first inorganic protective film and the third inorganic protective film can be formed in a chamber of a silane (SiH4): nitrogen (N2) atmosphere.

The second inorganic protective film can be formed in a chamber of a silane (SiH4): nitrogen (N2): ammonia (NH3) atmosphere.

The surface preprocessing step of the subpixel can apply a nitrogen (N2) plasma to the upper electrode of the subpixel.

On the other hand, in another aspect, the present invention provides a liquid crystal display comprising: a subpixel positioned on a substrate; And an inorganic protective film formed of an inorganic material so as to cover the subpixels and having at least three layers formed to have at least three different thicknesses and densities. The inorganic protective film includes a first inorganic protective film located on the subpixel, And a third inorganic protective film located on the second inorganic protective film and thinner than a thickness of the second inorganic protective film. The present invention also provides an organic electroluminescent display device comprising: a first inorganic protective film;

The refractive index of at least one of the first inorganic protective film and the third inorganic protective film may be 1.7 to 2.7.

At least one of the first inorganic protective film and the third inorganic protective film may have a thickness of 500 Å to 5000 Å.

The refractive index of the second inorganic protective film may be 1.4 to 2.2.

The thickness of the second inorganic protective film may be 1000 Å to 3 탆.

The embodiment of the present invention has an effect of providing an organic electroluminescent display device manufacturing method which can protect the device from penetration of outside air to improve the reliability and lifetime of the device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. FIGS. 2 to 5 are cross-sectional views illustrating a manufacturing method of FIG.

First, as shown in FIGS. 1 and 2, a step of forming a subpixel on a substrate (S101) is performed.

The substrate 110 can be selected to have excellent mechanical strength and dimensional stability as a material for forming devices. As a material of the substrate 110, a glass plate, a metal plate, a ceramic plate, or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, Resin, etc.) and the like.

The subpixel 120 located on the substrate 110 can be formed in a passive matrix type or an active matrix type. When the sub-pixel 120 is a passive matrix type, the sub-pixel 120 may include an organic light emitting diode including a lower electrode, an organic light emitting layer, and an upper electrode located on the substrate 110. Alternatively, when the subpixel 120 is of an active matrix type, the subpixel 120 is positioned on the substrate 110 and includes a transistor including a capacitor, a lower electrode connected to the source or drain of the transistor, And an organic light emitting diode.

Next, as shown in Figs. 1 and 2, a surface preprocessing step (S103) of the subpixel is performed.

At this stage, nitrogen (N 2) plasma may be applied to the upper electrode of the subpixel 120 to convert the surface 130 of the upper electrode to N rich. When the nitrogen plasma is applied, the surface 130 of the upper electrode may be cleaned and N-rich so that adhesion to the inorganic protective film to be formed on the sub-pixel 120 may be improved.

Next, as shown in FIGS. 1 and 3 to 5, at least three layers of inorganic protective films are formed (S105) so as to have at least one different thickness and density as the inorganic material so as to cover the subpixel 120 .

The inorganic protective film 140 may include a first inorganic protective film 141 formed on the sub pixel 120 and a second inorganic protective film 141 thicker than the first inorganic protective film 141, 142, and a third inorganic protective film 143 that is thinner than the second inorganic protective film 142.

The first inorganic protective film 141 shown in FIG. 3 can be formed in a chamber of a silane (SiH.sub.4): nitrogen (N.sub.2) atmosphere using plasma enhanced chemical vapor deposition (PECVD) equipment. When the first inorganic protective film 141 is formed in the chamber of the silane (SiH 4): nitrogen (N 2) atmosphere as described above, the first inorganic protective film 141 can be formed as a dense film, It is possible to suppress the possibility of pin-hole growth of fine particles in the substrate.

The second inorganic protective film 142 shown in FIG. 4 can be formed in a chamber of a silane (SiH.sub.4): nitrogen (N.sub.2): ammonia (NH.sub.3) atmosphere using a plasma enhanced chemical vapor deposition . When the second inorganic protective film 142 is formed in the chamber of the silane (SiH4): nitrogen (N2): ammonia (NH3) atmosphere, the second inorganic protective film 142 can serve as a buffer layer, It is possible to alleviate the stress generated in the heat exchanger 141.

The third inorganic protective film 143 shown in FIG. 5 may be formed in a chamber of a silane (SiH.sub.4): nitrogen (N.sub.2) atmosphere using plasma enhanced chemical vapor deposition (PECVD) equipment. Thus, when the third inorganic protective film 143 is formed in a chamber of a silane (SiH 4): nitrogen (N 2) atmosphere, permeation of moisture or the like coming from the outside can be prevented and the performance of the device can be maintained.

Therefore, the inorganic protective film 140 located on the sub-pixel 120 is formed of at least three layers having the same thickness and density as the same inorganic material, so that penetration of moisture or the like coming in from the outside can be prevented, .

Hereinafter, an organic light emitting display device manufactured by an embodiment of the present invention will be described.

FIG. 6 is a cross-sectional view of an organic light emitting display according to an embodiment of the present invention, and FIG. 7 is an enlarged view of a Z region in FIG.

6, an organic light emitting display according to an exemplary embodiment of the present invention includes an organic light emitting diode (OLED), which is formed of an inorganic material so as to cover a subpixel 120 and a subpixel 120 located on a substrate 110, And an inorganic protective film 140 having at least three layers formed to have different thicknesses and densities. The inorganic protective film 140 includes a first inorganic protective film 141 located on the sub pixel 120 and a second inorganic protective film 141 located on the first inorganic protective film 141, 2 inorganic protective film 142 and a third inorganic protective film 143 located on the second inorganic protective film 142 and thinner than the second inorganic protective film 142. [

The refractive index of at least one of the first inorganic protective film 141 and the third inorganic protective film 143 may be 1.7 to 2.7. Here, the first inorganic protective film 141 is located on the upper electrode surface 130 of the N-rich sub-pixel 120, and defects or other foreign matters that may occur on the upper electrode may stick to each other It must have a relatively dense membrane than the other layers in order to prevent it. Therefore, when the first inorganic protective film 141 is formed of a silicon-based material, its refractive index R.I can be formed in the range of 1.7 to 2.7 as described above. However, if the composition is made differently and more compact, the refractive index value can be increased.

The refractive index of the second inorganic protective film 142 may be 1.4 to 2.2. Here, in the case of the second inorganic protective film 142, the first inorganic protective film 141 is less dense than the first inorganic protective film 141, so that it can serve as a buffer layer that can alleviate the stress of the first inorganic protective film 141 located below . Therefore, when the second inorganic protective film 142 is formed by a recall sequence, its refractive index R.I can be formed in the range of 1.4 to 2.2 as described above.

At least one of the first inorganic protective film 141 and the third inorganic protective film 143 may have a thickness of 500 Å to 5000 Å. In the case of the first inorganic protective film 141 having a thickness of 500 ANGSTROM or more, the possibility of pin-hole growth of fine particles can be suppressed. If the thickness of the first inorganic protective film 141 is 5000 ANGSTROM or less, . In the case of the third inorganic protective film 143 having a thickness of 500 ANGSTROM or more, penetration of moisture or the like coming from outside can be prevented and the performance of the device can be maintained. If the thickness is less than 5000 ANGSTROM, do.

The thickness of the second inorganic protective film 142 may be 1000 Å to 3 urn. If the thickness of the second inorganic protective film 142 is 1000 angstroms or more, the second inorganic protective film 142 can sufficiently function as a buffer layer. If the thickness is 3 μm or less, the second inorganic protective film 142 can have a process yield.

Hereinafter, the subpixel 120 according to the embodiment of the present invention will be described in more detail with reference to FIG.

As shown in FIG. 7, the buffer layer 111 may be positioned on the substrate 110. The buffer layer 111 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the substrate 110. The buffer layer 111 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

A gate 112 may be located on the buffer layer 111. The gate 112 is formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper Or an alloy thereof. The gate 112 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, And may be a multilayer composed of any one selected or an alloy thereof. Also, the gate 112 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 may be located on the gate 112. The first insulating layer 113 may be a silicon oxide (SiOx), a silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 114 may be located on the first insulating layer 113. The active layer 114 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer for lowering the contact resistance.

On the active layer 114, the source 115a and the drain 115b may be positioned. The source 115a and the drain 115b may be formed of a single layer or multiple layers and may be formed of a single layer of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). When the source 115a and the drain 115b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum, or molybdenum / aluminum-neodymium / molybdenum.

The second insulating film 116a may be located on the source 115a and the drain 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

One of the source 115a and the drain 115b is located on the second insulating film 116a and may be connected to a shield metal 118 for preventing interference between the source 115a and the drain 115b .

A third insulating layer 116b may be formed on the second insulating layer 116a to increase the flatness. The third insulating film 116b may include an organic material such as polyimide.

In the above description, the transistor formed on the substrate 110 is of the Batam gate type. However, the transistor formed on the substrate 110 can be formed not only as a totem gate type but also as a top gate type.

A lower electrode 117 connected to the source 115a or the drain 115b may be positioned on the third insulating film 116b of the transistor. The lower electrode 117 may be selected as an anode or a cathode. When the lower electrode 117 is selected as the anode, the anode may be formed of any one of ITO (Indium Tin Oxide), IZO (Indium Tin Zinc Oxide), ITZO (Indium Tin Zinc Oxide), and AZO (Zno doped Al2O3) But are not limited thereto.

On the lower electrode 117, a bank layer 119 having an opening exposing a part of the lower electrode 117 may be positioned. The bank layer 119 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin.

The organic light emitting layer 121 may be positioned on the lower electrode 117. The organic light emitting layer 121 may be formed to emit light of any one of red, green, and blue depending on subpixels.

The upper electrode 122 may be located on the organic light emitting layer 121. The upper electrode 122 may be selected as a cathode or an anode. When the cathode is selected, the material of the cathode may be any one of aluminum (Al), aluminum alloy (Al alloy), and aluminum nitride (AlNd), but is not limited thereto.

Hereinafter, the organic light emitting diode including the organic light emitting layer 121 will be described in more detail with reference to FIG.

8 is a view showing an example of a hierarchical structure of an organic light emitting diode.

8, when the organic light emitting diode is a top emission type normal structure, the organic light emitting diode includes a lower electrode 117, a hole injection layer 121a, a hole transport layer 121b, a light emitting layer 121c, An electron injection layer 121d, an electron injection layer 121e, and an upper electrode 122. [

The hole injection layer 121a may serve to smooth the injection of holes and may be formed of a material such as cupper phthalocyanine, PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) and NPD (N, -N, N'-diphenyl benzidine), but the present invention is not limited thereto.

The hole transport layer 121b plays a role of facilitating the transport of holes and includes a hole transporting material such as NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'- , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) But is not limited thereto.

The light emitting layer 121c may include materials that emit red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl)), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate a phosphorescent dopant including at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 121c is green, it may be made of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, it may include a host material including CBP or mCP, and may include a phosphorescent material including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

The electron transporting layer 121d serves to smooth the transport of electrons and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq But are not limited thereto.

The electron injection layer 121 e may be used to facilitate the injection of electrons and may include Alq 3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

Here, the embodiment of the present invention is not limited to FIG. 8, and at least one of the hole injection layer 121a, the hole transport layer 121b, the electron transport layer 121d, and the electron injection layer 121e may be omitted .

Meanwhile, the organic light emitting display device having the above structure can not only complete the device with the passivation structure using the three-layer inorganic protective film but also perform the sealing process with the sealing substrate as shown in the following FIG. 9, .

9 is a plan view of an organic light emitting display according to an embodiment of the present invention.

9, the organic light emitting display includes a sealing substrate 160 facing the substrate 110 to protect the sub-pixel 120 formed on the substrate 110 from moisture and the like, 110 and the sealing substrate 160 may be formed and then sealed.

After the driving unit 180 including the data driver and the scan driver is formed on the substrate 110 and connected to the external device, the organic light emitting display displays the image of the subpixel 120 in the display unit 150, Can be expressed.

As described above, the embodiment of the present invention provides an organic light emitting display device and a method of manufacturing the same, which can improve the reliability and lifetime of a device by protecting the device from penetration of outside air.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

2 to 5 are sectional views for explaining the manufacturing method of Fig.

6 is a sectional view of an organic light emitting display device according to an embodiment of the present invention.

Fig. 7 is an enlarged view of the Z area in Fig. 6; Fig.

8 is a view illustrating an example of a hierarchical structure of an organic light emitting diode.

9 is a plan view of an organic light emitting display according to an embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

110: Substrate 120: Subpixel

140: inorganic protective film 141: first inorganic protective film

142: second inorganic protective film 143: third inorganic protective film

Claims (10)

Forming a sub-pixel on the substrate; A surface preprocessing step of the subpixel; And At least three layers of an inorganic protective film including a first inorganic protective film, a second inorganic protective film which is thicker than the first inorganic protective film, and a third inorganic protective film which is thinner than the second inorganic protective film, ; At least one of the first inorganic protective film and the third inorganic protective film is formed in a chamber of a silane (SiH4): nitrogen (N2) atmosphere, The second inorganic protective film is formed in a chamber of a silane (SiH4): nitrogen (N2): ammonia (NH3) atmosphere, Wherein at least one of the first inorganic protective film and the third inorganic protective film has a refractive index of 1.7 to 2.7 and at least one of the first inorganic protective film and the third inorganic protective film has a thickness of 500 ANGSTROM to 5,000 ANGSTROM, The refractive index is 1.4 to 2.2, and the thickness of the second inorganic protective film is 1000 占 to 3 占 퐉. delete delete delete The method according to claim 1, The surface preprocessing step of the sub- Wherein a nitrogen (N2) plasma is applied to an upper electrode of the subpixel. delete delete delete delete delete

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