KR20100027902A - Organic light emitting display and manufacturing method of the same - Google Patents

Abstract

PURPOSE: An organic electroluminescent display device and a manufacturing method thereof are provided to protect a sub pixel formed in a substrate from the moisture by forming an adhesive member between a substrate and a sealing substrate facing the substrate. CONSTITUTION: A sub pixel(120) is formed on a substrate(110). The sub pixel is formed to a passive matrix type or an active matrix type. A surface(130) of an upper electrode is changed to N Rich state by executing a nitrogen plasma to the upper electrode of the sub pixel. At least three layered inorganic protective film(140) is formed on the sub pixel. The inorganic protective film comprises a first inorganic protective film(141), a second inorganic protective film(142) which is thicker than the first inorganic protective film, and a third inorganic protective film(143) which is thinner than the second inorganic protective film.

Description

Organic Light Emitting Display and Manufacturing Method of the Same

Embodiments of the present invention relate to an organic light emitting display device and a method of manufacturing the same.

The organic light emitting display device used in the organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate.

The organic light emitting display device may be classified into a top-emission method, a bottom-emission method, or a dual-emission method according to a direction in which light is emitted. In addition, it may be divided into a passive matrix type and an active matrix type according to the driving method.

When the scan signal, the data signal, and the power are supplied to the plurality of subpixels arranged in a matrix form, the organic light emitting display device may display an image by emitting light of the selected subpixel.

The subpixels included in the organic light emitting display device are vulnerable to moisture or oxygen. Thus, conventionally, a method of encapsulating a sealing process through a moisture absorbent such as a getter or the like has been proposed, or a method of covering a subpixel with a protective film has been proposed.

An embodiment of the present invention for solving the above problems of the background art is to provide an organic light emitting display device and a method of manufacturing the same that can protect the device from the penetration of outside air to improve the reliability and life of the device.

Embodiment of the present invention by the above-described problem solving means, forming a sub-pixel on a substrate; Surface pretreatment of the subpixels; And forming at least three layers of inorganic protective films having at least one different thickness and density from the inorganic material to cover the subpixels.

The inorganic protective film may include a first inorganic protective film positioned on the subpixel, a second inorganic protective film thicker than the thickness of the first inorganic protective film, and a third inorganic protective film thinner than the thickness of the second inorganic protective film.

At least one of the first inorganic protective film and the third inorganic protective film may be formed in a chamber in a silane (SiH 4): nitrogen (N 2) atmosphere.

The second inorganic protective film can be formed in a chamber in a silane (SiH 4): nitrogen (N 2): ammonia (NH 3) atmosphere.

In the surface pretreatment of the subpixel, nitrogen (N2) plasma may be applied to the upper electrode of the subpixel.

On the other hand, in another aspect, the present invention, the sub-pixel located on the substrate; And an inorganic protective film formed of an inorganic material to cover the subpixels, and having at least three layers formed to have one or more different thicknesses and densities, wherein the inorganic protective film includes: a first inorganic protective film positioned on the subpixel, and a first inorganic protective film; An organic light emitting display device includes: a second inorganic protective film disposed on and thicker than a thickness of the first inorganic protective film; and a third inorganic protective film disposed on the second inorganic protective film and thinner than the thickness of the second inorganic protective film.

The refractive index of at least one of the first inorganic protective film and the third inorganic protective film may be 1.7 to 2.7.

The thickness of at least one of the first inorganic protective film and the third inorganic protective film may be 500 kPa to 5000 kPa.

The refractive index of the second inorganic protective film may be 1.4 to 2.2.

The thickness of the second inorganic protective film may be 1000 kPa to 3 μm.

Embodiments of the present invention have an effect of providing an organic light emitting display device and a method of manufacturing the same, which can protect a device from infiltration of external air, thereby improving reliability and lifetime of the device.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a flowchart illustrating a manufacturing method of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIGS. 2 to 5 are cross-sectional views illustrating the manufacturing method of FIG. 1.

First, as shown in FIGS. 1 and 2, a step (S101) of forming a subpixel on a substrate is performed.

The substrate 110 may be selected as a material for forming an element having excellent mechanical strength or dimensional stability. As the material of the substrate 110, a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, fluorine) Resin, etc.) is mentioned.

The subpixel 120 positioned on the substrate 110 may be formed in a passive matrix type or an active matrix type. When the subpixel 120 is a passive matrix, the subpixel 120 may include an organic light emitting diode including a lower electrode, an organic emission layer, and an upper electrode positioned on the substrate 110. In contrast, when the subpixel 120 is an active matrix, the subpixel 120 is located on the substrate 110 and includes a transistor including a capacitor, a lower electrode, an organic emission layer, and an upper electrode connected to a source or a drain of the transistor. It may include an organic light emitting diode comprising a.

Next, as shown in FIGS. 1 and 2, the surface pretreatment step S103 of the subpixel is performed.

In this step, nitrogen (N2) plasma may be applied to the upper electrode of the subpixel 120 to change the surface 130 of the upper electrode to N rich. As such, when the nitrogen plasma is applied, the surface 130 of the upper electrode may be cleaned and N rich to improve adhesion to the inorganic protective film to be formed on the subpixel 120.

Next, as shown in FIGS. 1 and 3 to 5, at least three layers of an inorganic protective film are formed to have at least one different thickness and density from the inorganic material to cover the subpixel 120 (S105). .

The inorganic passivation layer 140 may be formed of silicon (Si), and may include a first inorganic passivation layer 141 located on the subpixel 120 and a second inorganic passivation layer thicker than a thickness of the first inorganic passivation layer 141. 142 and a third inorganic protective film 143 thinner than the thickness of the second inorganic protective film 142.

The first inorganic protective film 141 illustrated in FIG. 3 may be formed in a chamber in a silane (SiH 4): nitrogen (N 2) atmosphere using PECVD (Plasma-enhanced chemical vapor deposition) equipment. As described above, when the first inorganic protective film 141 is formed in the chamber of silane (SiH4): nitrogen (N2) atmosphere, the first inorganic protective film 141 can be formed into a dense film, so that the surface of the upper electrode can be formed. It is possible to suppress the possibility of pin-hole growth of the fine particles in the (particle).

The second inorganic protective film 142 illustrated in FIG. 4 may be formed in a chamber in a silane (SiH 4): nitrogen (N 2): ammonia (NH 3) atmosphere using PECVD (Plasma-enhanced chemical vapor deposition) equipment. . As such, when the second inorganic protective film 142 is formed in the chamber of the silane (SiH 4): nitrogen (N 2): ammonia (NH 3) atmosphere, the second inorganic protective film 142 may act as a buffer layer and thus the first inorganic protective film. The stress generated at 141 can be alleviated.

The third inorganic protective film 143 illustrated in FIG. 5 may be formed in a chamber in a silane (SiH 4): nitrogen (N 2) atmosphere using PECVD (Plasma-enhanced chemical vapor deposition) equipment. As such, when the third inorganic protective film 143 is formed in the chamber of the silane (SiH 4): nitrogen (N 2) atmosphere, it is possible to prevent the penetration of moisture or the like from the outside and maintain the performance of the device.

Therefore, the inorganic protective film 140 positioned on the subpixel 120 is formed of at least three layers of the same inorganic material to have one or more different thicknesses and densities, thereby preventing penetration of moisture from the outside and maintaining the performance of the device. Will be.

Hereinafter, an organic light emitting display device manufactured according to an embodiment of the present invention will be described.

6 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIG. 7 is an enlarged view of region Z of FIG. 6.

As shown in FIG. 6, the organic light emitting display device according to the exemplary embodiment of the present invention is formed of an inorganic material to cover the subpixel 120 and the subpixel 120 positioned on the substrate 110 and at least one organic light emitting display device. It may include an inorganic protective film 140 formed with at least three layers to have a different thickness and density. However, the inorganic passivation layer 140 may include a first inorganic passivation layer 141 disposed on the subpixel 120 and a first inorganic passivation layer 141 that is thicker than a thickness of the first inorganic protection layer 141. And a second inorganic protective film 142 and a third inorganic protective film 143 positioned on the second inorganic protective film 142 and thinner than the thickness of the second inorganic protective film 142.

The refractive index of at least one of the first inorganic protective layer 141 and the third inorganic protective layer 143 may be 1.7 to 2.7. Here, the first inorganic protective film 141 is located on the upper electrode surface 130 of the sub pixel 120 that is changed to N-rich, so that defects or other foreign substances that may occur on the upper electrode do not adhere to each other. In order to prevent it, it should have a relatively dense film than other layers. Therefore, when the first inorganic protective film 141 is formed of silicon, its refractive index (R.I) may be formed in the range of 1.7 to 2.7 as described above. However, if the composition is made denser, the refractive index value can be higher.

The refractive index of the second inorganic protective layer 142 may be 1.4 to 2.2. Here, in the case of the second inorganic protective layer 142, less dense than the first inorganic protective layer 141 may serve as a buffer layer to relieve the stress of the first inorganic protective layer 141 located below. . Therefore, when the second inorganic protective film 142 is formed of a silica-based, its refractive index (R.I) may be formed in the range of 1.4 to 2.2 as described above.

The thickness of at least one of the first inorganic protective film 141 and the third inorganic protective film 143 may be 500 kPa to 5000 kPa. In the case of the first inorganic protective film 141, the thickness of 500 kPa or more can suppress the possibility of pin-hole growth of fine particles, and the thickness of 5000 micrometers or less can prevent damage of the device located below. It becomes possible. In the case of the third inorganic protective film 143, the thickness of 500 Å or more prevents the penetration of moisture from the outside and maintains the performance of the device. do.

The thickness of the second inorganic protective layer 142 may be 1000 μm to 3 μm. In the case of the second inorganic protective film 142, the thickness of 1000 Å or more can sufficiently serve as a buffer layer, and if the thickness of 3 占 퐉 or less, the second inorganic protective film 142 can have a range that can satisfy the yield of the process.

Hereinafter, the subpixel 120 according to the exemplary embodiment of the present invention will be described in more detail with reference to FIG. 7.

As shown in FIG. 7, a buffer layer 111 may be positioned on the substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 110. The buffer layer 111 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The gate 112 may be located on the buffer layer 111. The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 may be positioned on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 114 may be positioned on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

The source 115a and the drain 115b may be positioned on the active layer 114. The source 115a and the drain 115b may be formed of a single layer or multiple layers. When the source 115a and the drain 115b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), and gold may be used. (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof. In addition, when the source 115a and the drain 115b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 116a may be positioned on the source 115a and the drain 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

One of the source 115a and the drain 115b may be positioned on the second insulating layer 116a and may be connected to a shield metal 118 to prevent interference between the source 115a and the drain 115b. .

The third insulating layer 116b may be positioned on the second insulating layer 116a to increase the flatness. The third insulating layer 116b may include an organic material such as polyimide.

The foregoing has described, as an example, that the transistor formed on the substrate 110 is a batam gate type. However, the transistor formed on the substrate 110 may be formed in not only a batam gate type but also a top gate type.

The lower electrode 117 connected to the source 115a or the drain 115b may be positioned on the third insulating layer 116b of the transistor. The lower electrode 117 may be selected as an anode or a cathode. When the lower electrode 117 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and zno doped al 2 oxide (AZO). However, the present invention is not limited thereto.

The bank layer 119 having an opening exposing a portion of the lower electrode 117 may be disposed on the lower electrode 117. The bank layer 119 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 121 may be positioned on the lower electrode 117. The organic emission layer 121 may be formed to emit one of red, green, and blue colors depending on the subpixels.

The upper electrode 122 may be positioned on the organic emission layer 121. The upper electrode 122 may be selected as a cathode or an anode. When selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Alminri (AlNd), but is not limited thereto.

Hereinafter, an organic light emitting diode including the organic light emitting layer 121 will be described in more detail with reference to FIG. 8.

8 is an exemplary hierarchical structure of an organic light emitting diode.

As shown in FIG. 8, when the organic light emitting diode has a top light emitting normal structure, the organic light emitting diode has a lower electrode 117, a hole injection layer 121a, a hole transport layer 121b, a light emitting layer 121c, and an electron transport layer. 121d, an electron injection layer 121e, and an upper electrode 122.

The hole injection layer 121a may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer 121b serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The emission layer 121c may include a material emitting red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, the host material includes CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and includes PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 121c is green, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The electron transport layer 121d serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The electron injection layer 121e serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 8, and at least one of the hole injection layer 121a, the hole transport layer 121b, the electron transport layer 121d, and the electron injection layer 121e may be omitted. .

On the other hand, the organic light emitting display device having the structure as described above can not only complete the device in the passivation structure using the inorganic protective film of the three layers, but also provided with a sealing substrate as shown in FIG. You can also complete

9 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIG. 9, the organic light emitting display device includes a sealing substrate 160 facing the substrate 110 to protect the sub-pixel 120 formed on the substrate 110 from moisture or the like. After forming the adhesive member 170 between the 110 and the sealing substrate 160 may be sealed.

Subsequently, when the driving unit 180 including the data driving unit and the scan driving unit is formed on the substrate 110 and connected to an external device, the organic light emitting display device displays an image as the sub-pixel 120 positioned in the display unit 150 emits light. Can be expressed.

Embodiments of the present invention have the effect of providing an organic light emitting display device and a method of manufacturing the same that can protect the device from infiltration of external air, thereby improving the reliability and lifetime of the device.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

2 to 5 are cross-sectional views for explaining the manufacturing method of FIG.

6 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

FIG. 7 is an enlarged view of the Z region of FIG. 6. FIG.

8 is an exemplary hierarchical structure of an organic light emitting diode.

9 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110: substrate 120: subpixel

140: weapon shield 141: first weapon shield

142: second weapon protection film 143: third weapon protection film

Claims (10)

Forming a subpixel on the substrate; Surface pretreatment of the sub-pixels; And Forming at least three layers of an inorganic protective film having one or more different thicknesses and densities of inorganic materials so as to cover the subpixels. The method of claim 1, The inorganic protective film, An organic light emitting display device comprising: a first inorganic passivation layer on the subpixel; a second inorganic passivation layer thicker than the thickness of the first inorganic passivation layer; and a third inorganic passivation layer thinner than the thickness of the second inorganic passivation layer. Manufacturing method. The method of claim 2, At least one of the first inorganic protective film and the third inorganic protective film, Silane (SiH 4): A method for manufacturing an organic light emitting display device, characterized in that formed in a chamber in a nitrogen (N 2) atmosphere. The method of claim 2, The second inorganic protective film, A silane (SiH 4): nitrogen (N 2): ammonia (NH 3) atmosphere is formed in a chamber of an organic light emitting display device. The method of claim 1, Surface pretreatment of the sub-pixels, A method of manufacturing an organic light emitting display device according to claim 1, wherein nitrogen (N 2) plasma is applied to the upper electrode of the sub pixel. A subpixel located on the substrate; And An inorganic protective film formed of an inorganic material to cover the subpixels and having at least three layers formed to have one or more different thicknesses and densities, The inorganic protective film, A first inorganic protective layer on the subpixel, a second inorganic protective layer on the first inorganic protective layer and thicker than a thickness of the first inorganic protective layer, and a second inorganic protective layer on the second inorganic protective layer An organic light emitting display device comprising a third inorganic protective film thinner than the thickness of the protective film. The method of claim 6, Refractive index of at least one of the first inorganic protective film and the third inorganic protective film, An organic light emitting display device, characterized in that 1.7 ~ 2.7. The method of claim 6, At least one thickness of the first inorganic protective film and the third inorganic protective film, An organic light emitting display device, characterized in that 500 ~ 5000 Å. The method of claim 6, The refractive index of the second inorganic protective film, An organic light emitting display device, characterized in that 1.4 ~ 2.2. The method of claim 6, The thickness of the second inorganic protective film, An organic light emitting display device, characterized in that 1000 ~ 3 ㎛.

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