KR101577819B1 - organic light emitting display - Google Patents

Abstract

An embodiment of the present invention is a substrate processing apparatus comprising: a substrate; A pad portion positioned on the substrate and connected to the external circuit board; A connection wiring located on the substrate and extending from the pad portion; A display unit disposed on the substrate and including a plurality of subpixels; And a power supply wiring located in the periphery of the display unit and formed in a higher layer than the connection wiring, wherein the connection wiring and the power supply wiring are electrically connected to each other through at least two electrodes formed between the connection wiring and the power supply wiring, The organic light emitting display device according to claim 1,

Organic electroluminescent display device, power supply wiring, resistance

Description

[0001] The present invention relates to an organic light emitting display,

An embodiment of the present invention relates to an organic light emitting display.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes located on a substrate.

The organic light emitting display device may be a top emission type, a bottom emission type or a dual emission type depending on a direction in which light is emitted. It is divided into a passive matrix and an active matrix depending on the driving method.

An organic light emitting display may include a plurality of subpixels arranged in a matrix on a display unit defined on a substrate. When a scan signal, a data signal, a power supply, or the like is supplied to a plurality of subpixels arranged on the display unit, the selected subpixel emits light, thereby displaying an image.

The sub-pixels arranged in the display unit are supplied with a scan signal from the scan driver connected to the scan line, a data signal from the data driver connected to the data line, and a power source connected to the power line.

A pad portion connected to an external circuit board is formed on the substrate so as to receive various signals and power from the external circuit board. The power supplied to the sub-pixel is transmitted through the power wiring connected to the connection wiring extending from the pad portion. In the conventional organic light emitting display device, there is a problem that corrosion occurs in a region where the connection wiring and the power supply wiring are electrically connected to each other, or a floating phenomenon of the contact due to heat generation occurs.

In order to solve the problems of the background art described above, an embodiment of the present invention solves the problem that contact failure occurs in a part of the power supply wiring due to heat generated by corrosion or continuous driving by changing the connection structure of the power supply wiring, An organic electroluminescent display device capable of solving the problem of increased resistance is provided to improve the brightness of the panel.

According to an embodiment of the present invention, there is provided a semiconductor device comprising: a substrate; A pad portion positioned on the substrate and connected to the external circuit board; A connection wiring located on the substrate and extending from the pad portion; A display unit disposed on the substrate and including a plurality of subpixels; And a power supply wiring located in the periphery of the display unit and formed in a higher layer than the connection wiring, wherein the connection wiring and the power supply wiring are electrically connected to each other through at least two electrodes formed between the connection wiring and the power supply wiring, The organic light emitting display device according to claim 1,

The two electrodes may include a transparent electrode formed above the connection wiring and connected to the connection wiring, and a metal electrode formed below the transparent electrode and in contact with the transparent electrode and connected to the power supply wiring.

A metal electrode which is located on the first insulating film and is located apart from the connection wiring; and a second electrode which is located on the metal electrode and exposes a part of the connection wiring, A transparent electrode which is in contact with the exposed metal electrode which is in contact with the exposed connection wiring and which is located on the second insulating film and which is exposed on the transparent electrode, A third insulating film exposing a part of the first insulating film, and a power supply wiring which is located on the third insulating film and contacts the exposed metal electrode.

The connection wiring can be formed of the gate material of the transistor included in the subpixel.

The transparent electrode may be formed of the anode material of the organic light emitting diode included in the subpixel.

The metal electrode may be formed of the source drain material of the transistor included in the subpixel.

The power supply wiring may be formed so as to surround the display portion.

The metal electrode may be elongated to the left and right sides of the display portion so as to extend in the longitudinal direction of the left and right sides of the display portion.

The metal electrode may be formed on the left and right sides of the display portion so as to be located in a part of the left and right sides of the display portion.

The metal electrode may be formed on the left side, the right side and the upper side of the display portion so as to extend in the longitudinal direction of the three sides of the display portion and to open a region where the pad portion is located.

An embodiment of the present invention solves the problem that contact failure occurs in a part of the power wiring due to corrosion due to heat generated by corrosion or continuous driving and solves the problem that the resistance increases, There is an effect of providing a light emitting display device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

≪ Embodiment 1 >

1 is a plan view of an organic light emitting display according to a first embodiment of the present invention.

1, an organic light emitting display according to a first embodiment of the present invention includes a substrate 110, a pad unit 170, a connection wiring 171, a display unit AA, a power supply wiring 181, (Not shown).

The substrate 110 may be formed of a light-transmitting or non-light-transmitting material. As the material of the substrate 110, glass, metal, ceramic or plastic (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, And the like. Although not shown, the display portion AA located on the substrate 110 may be sealed by a sealing substrate arranged to face the substrate 110. [

The display portion AA is disposed on the substrate 110 and may include a plurality of sub-pixels SP. The plurality of subpixels SP may be located in a matrix form in the display unit AA. Here, the sub-pixel SP may be formed as an active matrix type or a passive matrix type according to a driving method. A transistor formed on the substrate 110 when the subpixel SP is an active matrix type, and an organic light emitting diode located on the transistor. Alternatively, the passive matrix type may include an organic light emitting diode other than a transistor. The structure of the sub-pixel SP will be described in more detail with reference to the drawings.

The driving unit 160 may include a data driver and a scan driver for supplying a data signal and a scan signal to a plurality of subpixels SP included in the display unit AA. The data driver may supply a horizontal synchronizing signal and an image data signal from the outside and generate a data signal or the like with reference to the horizontal synchronizing signal. The scan driver receives a vertical synchronization signal from the outside, and generates a scan signal and a control signal to supply the plurality of sub pixels SP with reference to the vertical synchronization signal. Here, the data driver and the scan driver included in the driver 160 may be separately positioned on the substrate 110.

The pad portion 170 is located on the substrate 110 and is connected to an external circuit substrate (not shown). The pad unit 170 is connected to a plurality of wirings connected to the display unit AA and the driver 160 that are positioned on the substrate 110. [

The connection wiring 171 is located on the substrate 110 and extends from the pad portion 170 and is connected to the power supply wiring 181. The connection wiring 171 and the power wiring 181 are the same wiring for transmitting the same power. The power supply wiring 181 is located in the periphery of the display portion AA and is formed in a higher layer than the connection wiring 171. [ The connection wiring 171 and the power supply wiring 181 are located between the connection wiring 171 and the power supply wiring 181 and electrically connected to each other through contact between at least two electrodes formed on different layers. The connection structure between the connection wiring 171 and the power wiring 181 will be described in detail with reference to the drawings.

Hereinafter, the structure of subpixels will be described with reference to FIG.

2 is a cross-sectional exemplary view of the A-A region of Fig.

Referring to FIG. 2, a gate 111a of the driving transistor and a gate 111b of the switching transistor may be disposed on the substrate 110. Each of the gates 111a and 111b is formed of a metal such as Mo, Al, Cr, Au, Ti, Ni, Ne, , Or an alloy thereof. The gates 111a and 111b are formed of a metal such as molybdenum, aluminum, chromium, gold, titanium, And may be a multilayer composed of any one or an alloy thereof. In addition, the gates 111a and 111b may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 112 may be located on the gate 111a of the driving transistor and the gate 111b of the switching transistor. The first insulating layer 112 may be a silicon oxide (SiOx), a silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

On the first insulating film 112, the active layer 113a of the driving transistor and the active layer 113b of the switching transistor may be located. Each of the active layers 113a and 113b may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layers 113a and 113b may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layers 113a and 113b may include an ohmic contact layer for lowering the contact resistance.

Source drains 114a and 114b that are in contact with the active layer 113a of the driving transistor and source drains 114c and 114d that are in contact with the active layer 113b of the switching transistor may be disposed on the first insulating layer 112 . Each source drain 114a, 114d may be a single layer or multiple layers. When the source drains 114a and 114d are a single layer, a single layer of Mo, Al, Cr, Au, Ti, Ni, Cu), or an alloy thereof. Alternatively, when the source drains 114a, 114d are multi-layered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

The second insulating film 115a may be located on the source drains 114a, 114d. The second insulating layer 115a may be silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof, but is not limited thereto.

A connection portion 116 that contacts one of the gate 111a of the driving transistor and one of the source drain 114a and 114b of the switching transistor may be disposed on the second insulating layer 115a.

A third insulating layer 115b may be formed on the second insulating layer 115a to increase the flatness. The third insulating film 115b may include an organic material such as polyimide.

A fourth insulating film 117 may be disposed on the third insulating film 115b. The fourth insulating film 117 may be a buffer layer formed of silicon nitride (SiNx) or the like.

In the above description, the transistor formed on the substrate 110 is of the Batam gate type. However, the transistor formed on the substrate 110 can be formed not only as a totem gate type but also as a top gate type.

A lower electrode 118 connected to the source drains 114a and 114b of the driving transistor may be positioned on the fourth insulating film 117. [ The lower electrode 118 may be selected as an anode or a cathode. When the lower electrode 118 is selected as a cathode, the material of the cathode may be any one of aluminum (Al), aluminum alloy (Al alloy), and aluminum nitride (AlNd). Thus, when the lower electrode 118 is selected as a cathode, it is advantageous to form the material of the cathode from a material having high reflectivity.

On the lower electrode 118, a bank layer 119 having an opening exposing a part of the lower electrode 118 may be located. The bank layer 119 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin.

The organic emission layer 121 may be located on the lower electrode 118. The organic light emitting layer 120 may be formed to emit light of any one of red, green, and blue depending on subpixels.

The upper electrode 122 may be located on the organic light emitting layer 121. The upper electrode 122 may be selected as a cathode or an anode. When the upper electrode 122 is selected as an anode, the anode may be formed of any one of ITO (Indium Tin Oxide), IZO (Indium Tin Oxide), ITZO (Indium Tin Zinc Oxide), and AZO (ZnO doped Al 2 O 3) But are not limited thereto.

Hereinafter, the organic light emitting diode including the organic light emitting layer 121 will be described in more detail with reference to FIG.

3 is a view illustrating an example of a hierarchical structure of an organic light emitting diode.

3, when the organic light emitting diode has an inverted structure, the organic light emitting diode includes a lower electrode 118, an electron injection layer 121a, an electron transport layer 121b, a light emitting layer 121c, A hole transport layer 121d, a hole injection layer 121e, and an upper electrode 122. [

The electron injection layer 121a may function to facilitate the injection of electrons and may include Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

The electron transport layer 121b serves to smooth the transport of electrons and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, But are not limited thereto.

The light emitting layer 121c may include a material that emits red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl)), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate a phosphorescent dopant including at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 121c is green, it may be made of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, it may include a host material including CBP or mCP, and may include a phosphorescent material including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

The hole transport layer 121d serves to smooth the transport of holes and may be formed by using NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'- , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) But is not limited thereto.

The hole injection layer 121e may serve to smooth the injection of holes and may be formed of a material such as CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) and NPD -N, N'-diphenyl benzidine), but the present invention is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 3, and at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted .

Hereinafter, the connection relationship between the connection wiring and the power supply wiring will be described in more detail with reference to FIGS. 4 and 5. FIG.

FIG. 4 is a cross-sectional view of a region B-B in FIG. 1, and FIG. 5 is an enlarged view of a region C in FIG.

Referring to FIG. 4, the connection wiring 171 and the power supply wiring 181 are interconnected by two electrodes 174 and 173. One of the two electrodes 174 and 173 is formed above the connection wiring 171 and includes a transparent electrode 174 connected to the connection wiring 171 and a transparent electrode 174 formed below the transparent electrode 174, And may include a metal electrode 173 connected to the power supply wiring 181.

The connection relation between the connection wiring 171, the transparent electrode 174, the metal electrode 173, and the power supply wiring 181 will be described below.

On the substrate 110, a connection wiring 171 is located. On the connection wiring 171, a first insulation film 112 exposing a part of the connection wiring 171 is located. A metal electrode 173 spaced apart from the connection wiring 171 is disposed on the first insulating layer 112. A second insulating layer 115 is formed on the metal electrode 173 to expose a part of the connection wiring 171 and to expose the first insulating layer 112 through a portion of the metal electrode 173. [ A transparent electrode 174 is formed on the second insulating layer 115 in contact with the exposed connection wiring 171 and in contact with the exposed metal electrode 173. On the transparent electrode 174, a third insulating film 117 exposing another part of the metal electrode 173 is positioned. On the third insulating film 117, a power supply wiring 181 which contacts the exposed metal electrode 173 is located.

5, when the connection wiring 171, the transparent electrode 174, the metal electrode 173, and the power supply wiring 181 are formed as shown in FIG. 4, A plurality of contact holes H are formed in the second insulating film 112 to the third insulating film 117. [ By using a plurality of contact holes H formed in the first insulating film 112 to the third insulating film 117 as described above, it is possible to improve the contact characteristics between the contact holes H and the peeling phenomenon between the structures located in the respective layers .

On the other hand, the power supply wiring 181 located on the substrate 110 may be formed so as to surround the display portion AA. The metal electrode 173 may be extended to the left and right of the display unit AA so as to extend in the longitudinal direction of the left and right sides of the display unit AA.

The connection wiring 171 is connected to the power supply wiring 181 by a process similar to that of the sub pixel SP without adding a separate process, As shown in FIG. The transparent electrode 174 is formed of the anode material of the organic light emitting diode included in the sub pixel SP. The metal electrode 173 is formed of the source drain material of the transistor included in the sub-pixel SP.

Hereinafter, the manufacturing process according to the embodiment will be described with reference to FIGS. 6 to 10. FIG.

Figs. 6 to 10 are views for explaining the process flow of the region B-B in Fig.

6, a connection wiring 171 is formed on a substrate 110, a first insulation film 112 is formed on the connection wiring 171, and a part of the connection wiring 171 is formed Patterned to be exposed. The connection wiring 171 is formed simultaneously with the same material, for example, aluminum nitride (AlNd), when forming the gate of the transistor included in the subpixel SP.

7, a metal electrode 173 is formed on the first insulating film 112, a second insulating film 115 is formed on the metal electrode 173, and then a part of the connection wiring 171 And then patterned to expose the first insulating layer 112 through a part of the metal electrode 173. [ In FIGS. 6 and 7, the patterns of the first insulating film 112 and the second insulating film 115 may be patterned by the same process, not by individual processes. The metal electrode 173 is formed simultaneously with the same material such as molybdenum (Mo) when forming the source drain of the transistor included in the subpixel SP.

Next, as shown in FIG. 8, a transparent electrode 174 is formed on the second insulating film 115 so as to be in contact with a part of the exposed connection wiring 171 and a part of the metal electrode 173. The transparent electrode 174 is formed simultaneously with the same material, such as ITO, when forming the connection included in the subpixel SP.

Next, as shown in FIG. 9, a third insulating film 117 is formed on the second insulating film 115 so that another portion of the metal electrode 173 is exposed. The third insulating film 117 is formed simultaneously with the same material such as silicon nitride (SiNx) when forming the buffer layer included in the subpixel SP.

Next, as shown in FIG. 10, a power supply wiring 181 is formed on the third insulating film 117 so as to be in contact with the metal electrode 173 exposed through the third insulating film 117. The power supply wiring 181 is formed at the same time with the same material, for example, aluminum nitride (AlNd), when forming the lower electrode included in the subpixel SP.

≪ Embodiment 2 >

FIG. 11 is a plan view of an organic light emitting display according to a second embodiment of the present invention, and FIG. 12 is a cross-sectional view of a region D-D of FIG.

11, the organic light emitting display according to the second exemplary embodiment of the present invention includes a substrate 210, a pad portion 270, a connection wiring 271, a display portion AA, a power supply wiring 281, (260). The pad portion 270, the display portion AA, and the driving portion 260 located on the substrate 210 are omitted in order to avoid duplication of description.

The pad portion 270 is located on the substrate 210 and is connected to an external circuit substrate (not shown). The pad unit 270 is connected to a plurality of wirings connected to the display unit AA and the driving unit 260 located on the substrate 210. [

The connection wiring 271 is located on the substrate 210 and extends from the pad portion 270 and is connected to the power supply wiring 281. The connection wiring 271 and the power wiring 281 are the same wiring for transmitting the same power. The power supply wiring 281 is located in the periphery of the display portion AA and is formed in a higher layer than the connection wiring 271. [ The connection wiring 271 and the power supply wiring 281 are located between the connection wiring 271 and the power supply wiring 281 and are electrically connected to each other through contact between at least two electrodes formed on different layers. The connection structure between the connection wiring 271 and the power wiring 281 will be described in more detail with reference to the drawings.

Referring to FIG. 12, it can be seen that the connection wiring 271 and the power supply wiring 281 are interconnected by two electrodes 274 and 273. One of the two electrodes 274 and 273 is formed above the connection wiring 271 and includes a transparent electrode 274 connected to the connection wiring 271 and a transparent electrode 274 formed below the transparent electrode 274. [ And a metal electrode 273 connected to the power supply line 281.

The connection relationship between the connection wiring 271, the transparent electrode 274, the metal electrode 273, and the power supply wiring 281 will be described below.

On the substrate 210, a connection wiring line 271 is located. On the connection wiring 271, a first insulation film 212 exposing a part of the connection wiring 271 is located. A metal electrode 273 spaced apart from the connection wiring 271 is located on the first insulating film 212. A second insulating layer 215 is formed on the metal electrode 273 to expose a part of the connection wiring 271 and to expose the first insulating layer 212 through a portion of the metal electrode 273. [ A transparent electrode 274 is formed on the second insulating layer 215 in contact with the exposed connection wiring 271 and in contact with the exposed metal electrode 273. On the transparent electrode 274, a third insulating film 217 exposing another part of the metal electrode 273 is located. On the third insulating film 217, a power supply wiring 281 which contacts the exposed metal electrode 273 is located.

Second Embodiment Similarly to the first embodiment, the power supply wiring 281 located on the substrate 210 can be formed so as to surround the display portion AA. However, unlike the first embodiment, the metal electrode 273 may be formed on the left and right sides of the display unit AA so as to be located in a part of the left and right sides of the display unit AA. 12, when the connection wiring 271, the transparent electrode 274, the metal electrode 273, and the power supply wiring 281 are formed in the same structure as in the first embodiment, A plurality of contact holes H are formed in the first to fourth insulating films 212 to 217 for connection to the first insulating film 212 to the third insulating film 217. By using a plurality of contact holes H formed, the contact characteristics between the contact holes H can be improved, and the peeling phenomenon between the structures located on each layer can be prevented.

The connection wirings 271 are connected to the subpixels SP so that the connection wirings 271 and the power supply wirings 281 can be mutually connected by the same process as the subpixel SP without adding a separate process And is formed of the gate material of the transistor. The transparent electrode 274 is formed of the anode material of the organic light emitting diode included in the sub pixel SP. The metal electrode 273 is formed of the source drain material of the transistor included in the subpixel SP.

≪ Third Embodiment >

FIG. 13 is a plan view of an organic light emitting display according to a third embodiment of the present invention, and FIG. 14 is a cross-sectional view of the region E-E of FIG.

13, an organic light emitting display according to a third exemplary embodiment of the present invention includes a substrate 310, a pad portion 370, a connection wiring 371, a display portion AA, a power supply wiring 381, (360). The pad portion 370, the display portion AA, and the driving portion 360 located on the substrate 310 are omitted to avoid duplication of description.

The pad portion 370 is located on the substrate 310 and is connected to an external circuit substrate (not shown). The pad portion 370 is connected to a plurality of wirings connected to the display portion AA and the driver 360 located on the substrate 310. [

The connection wiring 371 is located on the substrate 310 and extends from the pad portion 370 and is connected to the power supply wiring 381. The connection wiring 371 and the power supply wiring 381 are the same wiring carrying the same power supply, for example, "VDD". The power supply wiring 381 is located in the periphery of the display portion AA and is formed in a higher layer than the connection wiring 371. Here, the connection wiring 371 and the power supply wiring 381 are located between the connection wiring 371 and the power supply wiring 381 and are electrically connected to each other through contact between at least two electrodes formed on different layers. The connection structure between the connection wiring 371 and the power supply line 381 will be described in detail with reference to the drawings.

Referring to FIG. 14, the connection wiring 371 and the power supply wiring 381 are interconnected by two electrodes 374 and 373. One of the two electrodes 374 and 373 is formed above the connection wiring 371 and includes a transparent electrode 374 connected to the connection wiring 371 and a transparent electrode 374 formed below the transparent electrode 374. [ And a metal electrode 373 connected to the power supply line 381.

The connection relation between the connection wiring 371, the transparent electrode 374, the metal electrode 373, and the power supply wiring 381 will be described below.

On the substrate 310, a connection wiring 371 is located. On the connection wiring 371, a first insulation film 312 exposing a part of the connection wiring 371 is located. A metal electrode 373 spaced apart from the connection wiring 371 is disposed on the first insulating layer 312. A second insulating layer 315 is formed on the metal electrode 373 to expose a part of the connection wiring 371 and to expose the first insulating layer 312 through a part of the metal electrode 373. [ A transparent electrode 374 is formed on the second insulating layer 315 in contact with the exposed connection wiring 371 and in contact with the exposed metal electrode 373. On the transparent electrode 374, a third insulating film 317 exposing another part of the metal electrode 373 is located. On the third insulating film 317, a power supply wiring 381 that contacts the exposed metal electrode 373 is located.

Third Embodiment Similarly to the first embodiment, the power supply wiring 381 located on the substrate 310 can be formed so as to surround the display portion AA. Unlike the first embodiment, however, the metal electrode 373 extends in the longitudinal direction of the three sides of the display portion AA and is formed on the left, right, and upper sides of the display portion AA so as to open a region where the pad portion 370 is located. . 14, when the connection wiring 371, the transparent electrode 374, the metal electrode 373, and the power supply wiring 381 are formed in the same manner as in the first embodiment, A plurality of contact holes H are formed in the first insulating film 312 to the third insulating film 317 to connect the first insulating film 312 to the third insulating film 317 By using a plurality of contact holes H formed, the contact characteristics between the contact holes H can be improved, and the peeling phenomenon between the structures located on each layer can be prevented.

The connection wiring 371 is connected to the connection wiring 371 and the power supply wiring 381 by the same process as that of the sub pixel SP without adding a separate process, As shown in FIG. The transparent electrode 374 is formed of the anode material of the organic light emitting diode included in the subpixel SP. The metal electrode 373 is formed of the source drain material of the transistor included in the sub-pixel SP.

Each of the embodiments of the present invention has ITO and the power lines 181 and 182 which are the materials of the transparent electrodes 174, 274 and 374 when connecting the connection wirings 171, 271 and 371 and the power supply wirings 181, 281 and 381, 281, and 381 are not in direct contact with each other. Accordingly, it is possible to prevent galvanic corrosion between the ITO and the AlNd when the power wiring and the connection wiring are connected to each other. In other words, the embodiment of the present invention solves the problem of galvanic corrosion, thereby preventing a problem that the AlNd is lifted due to the heat generated by the continuous current transfer when driving the display device and the problem of the contact defect between AlNd and ITO do. In addition, since problems such as galvanic corrosion do not occur, it is possible to prevent an increase in resistance during continuous driving of the display device, thereby improving the brightness of the panel.

Therefore, the embodiment of the present invention solves the problem that contact failure occurs in a part of the power supply wiring due to corrosion due to heat generation due to corrosion or continuous driving, solves the problem that the resistance increases, and improves the brightness of the panel There is an effect of providing an organic electroluminescent display device.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1 is a plan view of an organic light emitting display device according to a first embodiment of the present invention.

2 is a cross-sectional exemplary view of the A-A region of Fig.

Fig. 3 is an example of a hierarchical structure of an organic light emitting diode. Fig.

4 is a cross-sectional exemplary view taken along the line B-B in Fig.

5 is an enlarged view of a region C in Fig.

FIGS. 6 to 10 are diagrams for explaining the process flow of the region B-B in FIG. 1;

11 is a plan view of an organic light emitting display according to a second embodiment of the present invention.

12 is a cross-sectional exemplary view taken along the line D-D in Fig.

13 is a plan view of an organic light emitting display according to a third embodiment of the present invention.

14 is a cross-sectional exemplary view taken along the line E-E of Fig.

DESCRIPTION OF THE REFERENCE NUMERALS

110, 210, 310: Substrate 170, 270, 370:

171, 271, 371: connection wiring 173, 273, 373: metal electrode

174, 274, 374: transparent electrodes 181, 281, 381: power supply wiring

SP: subpixel AA: display portion

Claims (11)

Board; A pad portion located on the substrate and connected to the external circuit board; A connection wiring located on the substrate and extending from the pad portion; A display disposed on the substrate and including a plurality of subpixels; And And a power supply wiring located in the periphery of the display portion and formed in a higher layer than the connection wiring, A metal electrode disposed on the first insulating film and spaced apart from the connection wiring; and a second electrode disposed on the metal electrode and partially exposed to the connection wiring, A second insulating layer which penetrates a part of the metal electrode to expose the first insulating layer, a transparent electrode which is located on the second insulating layer and is in contact with the exposed exposed connection wiring and is in contact with the exposed metal electrode, A third insulating layer located on the transparent electrode and exposing another portion of the metal electrode, and the power supply wiring being in contact with the exposed metal electrode located on the third insulating layer. delete delete The method according to claim 1, The connection wiring may include: And the gate electrode is formed of a gate material of the transistor included in the sub-pixel. The method according to claim 1, The transparent electrode Wherein the organic light emitting diode is formed of an anode material of the organic light emitting diode included in the subpixel. The method according to claim 1, The metal electrode And the source electrode of the transistor included in the sub-pixel is formed of a source drain material. The method according to claim 1, The power supply wiring includes: And the organic electroluminescent display device is formed so as to surround the display portion. 8. The method of claim 7, Wherein the metal electrode is elongated to the left and right of the display unit so as to extend in the longitudinal direction of the left and right sides of the display unit. 8. The method of claim 7, The metal electrode To be positioned in a part of the left and right sides of the display unit Wherein the display unit is formed on the left and right sides of the display unit. 8. The method of claim 7, The metal electrode Wherein the display unit is formed on the left side, the right side and the upper side of the display unit so as to extend in the longitudinal direction of the three sides of the display unit and to open a region where the pad unit is located. The method according to claim 1, Wherein the connection wiring and the power supply wiring are electrically connected to each other in the left and right regions of the display unit.

Images