KR20100074748A - Organic light emitting display device - Google Patents

Abstract

PURPOSE: An organic electroluminescent display device is provided to improve the life span and reliability of a device using a protective film. CONSTITUTION: A display unit(AA) includes a sub pixel(P) formed on a substrate in a matrix shape. Protective films(135a, 135b) are covered to cover the display unit. The protective film is formed by alternatively laminating organic films(131, 133) and inorganic films(132, 134). A metal layer(150) is interposed in at least one inorganic layer included in the protective film. The metal layer corresponds to a non-emitting area of the sub pixel.

Description

Organic Light Emitting Display Device

Embodiments of the present invention relate to an organic light emitting display device.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate.

The organic light emitting display includes a top emission type, a bottom emission type, or a dual emission type according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

The subpixels disposed in the organic light emitting display device include a switching transistor, a driving transistor, a capacitor, and an organic light emitting diode. The display unit including the sub-pixel having such a structure is vulnerable to moisture or oxygen to form a protective film by laminating one or more of an organic film and an inorganic film in a single layer or multiple layers so as to cover the display unit.

On the other hand, when the conventional protective film is bent under an environment of high temperature and high humidity, or an external impact is applied, problems such as cracking or lifting of the film occur in the inorganic film functioning as a substantially gas barrier (gas barrier) is required to improve it.

Embodiment of the present invention for solving the above problems of the background art, an organic electroluminescence that can improve the life and reliability of the device by using a protective film that can solve the problem of cracking or film lifting caused by external impact, etc. It is to provide a display device.

Embodiments of the present invention provide a display unit including a subpixel formed in a matrix form on a substrate; A protective film in which an organic film and an inorganic film are alternately stacked to cover the display unit; And a metal layer interposed in at least one inorganic layer included in the passivation layer and formed to correspond to the non-emission region of the subpixel.

On the other hand, an embodiment of the present invention, a display unit including a sub-pixel formed in a matrix form on the substrate; A protective film in which a plurality of inorganic films are stacked to cover the display unit; And a metal layer interposed in at least one inorganic layer included in the passivation layer and formed to correspond to the non-emission region of the sub-pixel.

On the other hand, an embodiment of the present invention, a display unit including a sub-pixel formed in a matrix form on the substrate; An inorganic protective film formed to cover the display unit; And a metal film disposed on the passivation layer and formed to correspond to the non-emission area of the sub-pixel.

The metal film may be formed in a matrix form along the non-light emitting area.

The metal film may be formed in a bar shape along one direction of the non-light emitting area.

The metal film may be formed such that the first metal film interposed between the first inorganic film positioned below and the second metal film interposed between the second inorganic film located above the first inorganic film cross each other.

The metal film can be formed of a material having excellent elongation.

The metal film may be formed of platinum, gold, silver, copper or aluminum.

Embodiments of the present invention have an effect of providing an organic light emitting display device that can improve the life and reliability of the device by using a protective film that can solve the problem of cracking or film lifting caused by external impact.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention.

As shown in FIG. 1, an organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate 110 having a display unit AA including sub pixels arranged in a matrix form, and a substrate 110. A passivation layer 135 that protects the formed element, a driver 180 supplying a driving signal to a sub-pixel included in the display unit AA, and a pad part connected to an external circuit board to transmit various signals supplied from the outside ( 170).

The substrate 110 may be formed of a light transmissive or non-transparent material. The substrate 110 may be made of glass, metal, ceramic, or plastic (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, fluorocarbon resin, etc.). Etc. can be mentioned.

The driver 180 may include a data driver and a scan driver for supplying a data signal and a scan signal to the sub-pixels included in the display unit AA. The data driver may receive a horizontal synchronization signal and an image data signal from an external source and generate a data signal by referring to the horizontal synchronization signal. The scan driver may receive a vertical synchronization signal from an external source and generate a scan signal and a control signal to be supplied to the plurality of subpixels with reference to the vertical synchronization signal. Here, the data driver and the scan driver included in the driver 180 may be separately located on the substrate 110.

First Embodiment

2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention, FIG. 3 is a cross-sectional view of a subpixel, and FIG. 4 is a hierarchical structure diagram of an organic light emitting diode.

Referring to FIG. 2, an organic light emitting display device according to a first embodiment of the present invention includes a display unit AA including a subpixel P formed in a matrix form on a substrate 110, and a display unit AA. In the passivation layers 135a and 135b in which the organic layers 131 and 135 and the inorganic layers 132 and 134 are alternately stacked to cover each other, and in the at least one inorganic layers 132 and 134 included in the passivation layers 135a and 135b. The metal layer 150 is interposed and formed to correspond to the non-emission region of the sub-pixel P.

Referring to FIG. 3, the display portion AA including the subpixel P formed in a matrix form may be formed as follows. The buffer layer 111 is positioned on the substrate 110. The buffer layer 111 may be formed to protect the thin film transistor T formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 110, but may be omitted. The buffer layer 111 may use silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

The gate 112 may be located on the buffer layer 111. The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 may be positioned on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 114 may be positioned on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

Source drains 115a and 115b may be disposed on the active layer 114 to contact the active layer 114. The source drains 115a and 115b may be made of a single layer or multiple layers. In the case of a single layer, the source drains 115a and 115b include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of any one or an alloy thereof selected from the group consisting of. Alternatively, in the case of multiple layers, the source drains 115a and 115b may be composed of a double layer of molybdenum / aluminum-neodymium, and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

The second insulating layer 116a may be positioned on the source drains 115a and 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto. Here, one of the source drains 115a and 115b may be positioned on the second insulating layer 116a and may be connected to a shield metal 118 for preventing interference between the source drains 115a and 115b.

The third insulating layer 116b may be positioned on the second insulating layer 116a to increase the flatness. The third insulating layer 116b may be formed of an organic material such as polyimide, but is not limited thereto.

The foregoing has described the thin film transistor T formed on the substrate 110 as a batam gate type as an example. However, the thin film transistor T formed on the substrate 110 may be formed as a top gate type as well as a batam gate type.

The lower electrode 117 connected to the source 115a or the drain 115b may be positioned on the third insulating layer 116b of the thin film transistor T. The lower electrode 117 may be selected as an anode or a cathode. When the lower electrode 117 is selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto. In addition, when the lower electrode 117 is selected as the cathode, it is advantageous to form a material having a high reflectivity as the material of the cathode.

The bank layer 119 having an opening exposing a portion of the lower electrode 117 may be disposed on the lower electrode 117. The bank layer 119 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 121 may be positioned on the lower electrode 117. The organic light emitting layer 121 may include an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer according to a light emitting method.

The upper electrode 122 may be positioned on the organic emission layer 121. The upper electrode 122 may be selected as a cathode or an anode. When the upper electrode 122 is selected as the anode, the material of the anode may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and AZO (ZnO doped Al2O3). But it is not limited thereto.

Referring to FIG. 4, the organic light emitting diode includes a lower electrode 117, an electron injection layer 121a, an electron transport layer 121b, an emission layer 121c, a hole transport layer 121d, a hole injection layer 121e, and an upper electrode ( 122). However, at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted.

The electron injection layer 121a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 121b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The light emitting layer 121c may be formed of red, green, and blue, and may be formed of a material which can be formed on the donor substrate shown in FIGS. 2 to 9 and can be transferred onto the substrate 110 by a laser.

The hole transport layer 121d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 121e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The metal layer 150 described above may be interposed in the inorganic layers 132 and 124 positioned in a region corresponding to the bank layer 119 which is a non-emission region of the subpixel P. Referring to FIG. The metal film 150 may be formed of a material having excellent elongation. For example, the metal film 150 may be formed of platinum, gold, silver, copper, or aluminum.

Hereinafter, the structure of the metal film 150 will be described in more detail with reference to FIGS. 5 to 7.

5 to 7 are exemplary views of the structure of the metal film.

Referring to FIG. 5, the metal film 150 may be formed in a matrix form along the bank layer 119 which is a non-light emitting area of the subpixel P. Referring to FIG. According to an example, the metal film 150 may be interposed between the first metal film 151 and the second inorganic film 134 disposed above the first inorganic film 132. As the second metal film 153 crosses each other, the second metal film 153 is formed in a matrix form. In another example, the metal film 150 has a matrix form in which both the first metal film 151 interposed between the first inorganic film 132 and the second metal film 153 interposed between the second inorganic film 134 are formed in a matrix form. Is formed.

Referring to FIG. 6, the metal film 150 may be formed in a bar shape along the vertical direction (that is, the data wiring direction) of the bank layer 119 which is the non-emission area of the subpixel P. . In this case, both the first metal film 151 and the second metal film 153 interposed between the first inorganic film 132 and the second inorganic film 134 are formed in a bar shape along the longitudinal direction.

Referring to FIG. 7, the metal film 150 may be formed in a bar shape along the horizontal direction (that is, the scan wiring direction) of the bank layer 119 which is the non-emission area of the subpixel P. In this case, both the first metal film 151 and the second metal film 153 interposed between the first inorganic film 132 and the second inorganic film 134 are formed in a bar shape along the horizontal direction.

Second Embodiment

8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

Referring to FIG. 8, an organic light emitting display device according to a second embodiment of the present invention includes a display unit AA including a subpixel P formed in a matrix form on a substrate 210, and a display unit AA. A non-light emitting region of the subpixel P, which is interposed in the passivation layer 235 in which the plurality of inorganic layers 231.. 234 are stacked and at least one inorganic layer 232 and 234 included in the passivation layer 235. It includes a metal film 250 formed corresponding to the.

The subpixel P included in the display unit AA may have the structure described with reference to FIG. 3, but is not limited thereto.

The metal layer 250 may be interposed in the second inorganic layer 232 and the fourth inorganic layer 234 positioned in a region corresponding to the bank layer 219 which is the non-emission region of the subpixel P. Referring to FIG. The metal film 250 may be formed of a material having excellent elongation. For example, the metal film 250 may be formed of platinum, gold, silver, copper, or aluminum.

As described above with reference to FIGS. 5 to 7, the structure of the metal layer 250 described above may be formed in a matrix form along the bank layer 219, which is a non-emission region of the subpixel P, or the bank layer 219. It may be formed in the form of a bar (bar) along the longitudinal direction of the bank, or may be formed in the form of a bar along the horizontal direction of the bank layer 219.

Third Embodiment

9 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

Referring to FIG. 9, an organic light emitting display device according to a third embodiment of the present invention includes a display unit AA including a subpixel P formed in a matrix form on a substrate 310, and a display unit AA. An inorganic passivation layer 335 formed to cover the gap, and a metal layer 350 disposed on the passivation layer 335 and corresponding to the non-light emitting area of the sub-pixel P.

The subpixel P included in the display unit AA may have the structure described with reference to FIG. 3, but is not limited thereto.

The metal film 350 may be formed on the bottom layer 335 positioned in a region corresponding to the bank layer 319, which is a non-light emitting region of the sub-pixel P. Referring to FIG. The metal film 350 may be formed of a material having excellent elongation. For example, the metal film 350 may be formed of platinum, gold, silver, copper, or aluminum, but is not limited thereto.

As described above with reference to FIGS. 5 to 7, the structure of the metal film 350 described above may be formed in a matrix form along the bank layer 319, which is a non-light emitting region of the subpixel P, or the bank layer 319. It may be formed in the form of a bar (bar) along the longitudinal direction of the bank, or may be formed in the form of a bar along the horizontal direction of the bank layer (319).

Embodiments of the present invention, the device using a protective film that can solve the problem of cracking or film lifting occurs in the inorganic film functioning as a substantial gas barrier even if bent under a high temperature and high humidity environment or subjected to an external impact, etc. There is an effect of providing an organic light emitting display device which can improve the lifetime and reliability of the.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention;

2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

3 is a cross-sectional view of a subpixel.

4 is a hierarchical structure diagram of an organic light emitting diode.

5 to 7 are examples of the structure of the metal film.

8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention;

9 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110, 210, 310: Substrate P: Sub Pixel

AA: display part 119, 219, 319: metal film

150, 250, 350: metal film

Claims (8)

A display unit including a subpixel formed in a matrix on a substrate; A protective film in which an organic film and an inorganic film are alternately stacked to cover the display unit; And And a metal layer interposed in at least one inorganic layer included in the passivation layer and formed to correspond to the non-emission region of the sub-pixel. A display unit including a subpixel formed in a matrix on a substrate; A protective film in which a plurality of inorganic films are stacked to cover the display unit; And And a metal layer interposed in at least one inorganic layer included in the passivation layer and formed to correspond to the non-emission region of the sub-pixel. A display unit including a subpixel formed in a matrix on a substrate; An inorganic protective film formed to cover the display unit; And And a metal film disposed on the passivation layer and corresponding to the non-emission area of the sub-pixel. The method according to any one of claims 1 to 3, The metal film, The organic light emitting display device of claim 1, wherein the organic light emitting display device is formed in a matrix form along the non-emission area. The method according to any one of claims 1 to 3, The metal film, The organic light emitting display device of claim 1, wherein the organic light emitting display device is formed in a bar shape along one direction of the non-light emitting area. The method according to any one of claims 1 to 3, The metal film, The organic light emitting display device, wherein the first metal film interposed between the first inorganic film disposed below and the second metal film interposed between the second inorganic film located above the first inorganic film intersect each other. . The method according to any one of claims 1 to 3, The metal film, An organic light emitting display device, characterized in that formed of a material having excellent elongation. The method of claim 1, The metal film, An organic light emitting display device comprising platinum, gold, silver, copper or aluminum.

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