KR20100077474A - Organic light emitting display device and fabricating method thereof - Google Patents

Abstract

PURPOSE: An organic electroluminescence display device and a method for fabricating the same are provided to reduce the resistance of the device by electrically contacting protective films and electrodes of two substrates while the two substrates are being combined to each other. CONSTITUTION: A transistor(T) is located on a first substrate(110). A cathode is located on the upper side of the transistor and is connected with the source or the drain of the transistor. A bank layer(119) is located on the cathode and exposes a part of the cathode. An organic electroluminescence layer(121) is located on the upper side of the bank layer. An anode(122) is located on the upper side of the organic electroluminescence layer. A first protective film(130) with a transparent metal oxide covers the anode. A second protective film, which is composed of either of a nitride or an oxide, is located on the first protective film.

Description

Organic Light Emitting Display Device and Fabrication Method

Embodiments of the present invention relate to an organic light emitting display device and a method of manufacturing the same.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate.

The organic light emitting display includes a top emission type, a bottom emission type, or a dual emission type according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

When the scan signal, the data signal, and the power are supplied to the subpixels arranged in a matrix form, the organic light emitting display device may display an image by emitting light of the selected subpixel.

The subpixel of the organic light emitting display device includes a transistor positioned on a substrate and an organic light emitting diode positioned on the transistor. An organic light emitting display device has a disadvantage in that elements formed on a substrate are vulnerable to moisture or oxygen.

Therefore, in the related art, a protective film is formed to cover sub-pixels formed on a substrate by a plasma chemical vapor deposition (PECVD) method or a sputtering method. However, when the organic light emitting diode is an inverted type formed of the cathode, the organic light emitting layer, and the anode, if the protective film is formed in the above manner, there is a problem that the organic thin film formed on the lower part is damaged, and thus an improvement thereof is required.

An embodiment of the present invention for solving the above problems of the background art, an inverted organic field that can prevent the problem of damaging the organic thin film located below the anode by forming a protective film by a thermal deposition method A light emitting display device and a method of manufacturing the same are provided. In addition, an embodiment of the present invention to provide an organic light emitting display device and a manufacturing method thereof that can lower the resistance of the device by the electrical contact between the protective film formed on each substrate and the electrode when sealing the two substrates.

Embodiments of the present invention as a means for solving the above problems, the first substrate; A transistor positioned on the first substrate; A cathode located on the transistor and coupled to the source or drain of the transistor; A bank layer located on the cathode and exposing a portion of the cathode; An organic light emitting layer on the bank layer; An anode positioned on the organic light emitting layer; And a first passivation layer formed to cover the anode and made of a transparent metal oxide.

Located on the transparent metal oxide protective film and may further include a second protective film of at least one of oxide or nitride based layer.

The transparent metal oxide may be made of tungsten oxide or molybdenum oxide.

The thickness of the anode may be formed thinner than the thickness of the cathode.

The display device may further include a second substrate bonded and sealed to the first substrate, and the second substrate may include a bus electrode formed in an area corresponding to the bank layer defining an area of the subpixels.

The display device may further include a transparent auxiliary electrode formed on the second substrate to cover the bus electrode, and the transparent auxiliary electrode may contact the first passivation layer.

On the other hand, another embodiment of the present invention, forming the sub-pixels in a matrix form on the first substrate; And forming a first passivation layer made of a transparent metal oxide so as to cover the subpixels by a thermal evaporation method.

The method may further include forming a second passivation layer disposed on the transparent metal oxide passivation layer, wherein at least one of an oxide or a nitride layer is formed of a single layer or a multilayer.

And a second substrate having a second substrate spaced apart from the first substrate and sealingly sealing the first substrate and the second substrate, wherein the second substrate is formed on a bus corresponding to a bank layer defining an area of subpixels. It may include an electrode.

The second substrate may further include a transparent auxiliary electrode formed to cover the bus electrode, and the transparent auxiliary electrode may contact the second protective layer.

Embodiments of the present invention provide an inverted organic electroluminescent display device and a method of manufacturing the same, which can prevent a problem of damaging an organic thin film disposed under the anode by forming a protective film by a thermal evaporation method. It works. In addition, the embodiment of the present invention has an effect of providing an organic light emitting display device and a method of manufacturing the same that can lower the resistance of the device by the electrical contact between the protective film formed on each substrate and the electrode when sealing the two substrates. have.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

First Embodiment

1 is a schematic plan view of an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 1, the organic light emitting display device according to the first embodiment of the present invention includes a first substrate 110 having a display unit AA on which sub-pixels SP are disposed. In addition, the first protective layer 130 is formed on the first substrate 110 to cover the sub-pixels SP disposed on the display unit AA and is formed of a transparent metal oxide. In addition, the driving unit 160 may supply a driving signal to the elements positioned on the first substrate 110. In addition, the pad unit 170 is connected to an external circuit board to transmit various signals supplied from the outside.

The first substrate 110 may be formed of a light transmissive or non-transparent material. The material of the first substrate 110 may be glass, metal, ceramic, or plastic (polycarbonate resin, acryl resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, fluorine). Resin, etc.) is mentioned.

The subpixels SP may be positioned in a matrix form on the display portion AA defined on the first substrate 110. The subpixels SP may be formed in an active matrix type and a passive matrix type according to a driving method. When the subpixels SP are of an active matrix type, the subpixels SP may include a transistor formed on the first substrate 110 and an organic light emitting diode positioned on the transistor. In contrast, the passive matrix type may include an organic light emitting diode except for a transistor.

The driver 160 may include a data driver and a scan driver for supplying a data signal and a scan signal to the sub-pixels SP included in the display unit AA. The data driver may receive a horizontal synchronization signal and an image data signal from an external source and generate a data signal by referring to the horizontal synchronization signal. The scan driver may receive a vertical synchronization signal from an external source and generate a scan signal and a control signal to be supplied to the subpixels SP with reference to the vertical synchronization signal. Here, the data driver and the scan driver included in the driver 160 may be separately located on the first substrate 110.

Hereinafter, an organic light emitting display device according to a first embodiment of the present invention will be described in more detail with reference to FIGS. 2 and 3.

2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention, and FIG. 3 is a cross-sectional view of an organic light emitting display device according to another embodiment.

Referring to FIG. 2, in the organic light emitting display device according to the first embodiment of the present invention, an organic light emitting diode D connected to a source or a drain of the transistor T and the transistor T formed on the first substrate 110. Subpixels are formed. The first passivation layer 130 made of a transparent metal oxide is formed on the sub pixel.

The buffer layer 111 may be positioned on the first substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the first substrate 110, but may be omitted.

The gate 112 may be located on the buffer layer 111. The gate 112 may be formed in a single layer or multiple layers.

The first insulating layer 113 may be positioned on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 114 may be positioned on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

Source drains 115a and 115b may be positioned on the active layer 114. The source drains 115a and 115b may be made of a single layer or multiple layers.

The second insulating layer 116a may be positioned on the source drains 115a and 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

One of the source drains 115a and 115b may be disposed on the second insulating layer 116a and may be connected to a shield metal 118 to prevent interference between the source drains 115a and 115b.

The third insulating layer 116b may be positioned on the second insulating layer 116a to increase the flatness. The third insulating layer 116b may include an organic material such as polyimide.

As described above, the transistor T formed on the first substrate 110 has a batam gate type as an example. However, the transistor T formed on the first substrate 110 may be formed in not only a batam gate type but also a top gate type.

The cathode 117 connected to the source 115a or the drain 115b may be positioned on the third insulating layer 116b of the transistor T.

On the cathode 117, a bank layer 119 having an opening exposing a portion of the cathode 117 may be located.

The organic emission layer 121 may be positioned on the cathode 117. The organic emission layer 121 may be formed to emit one of red, green, and blue colors depending on the subpixels.

The anode 122 may be positioned on the organic emission layer 121. The anode 122 may be thinner than the cathode 117.

The first passivation layer 130 made of a transparent metal oxide may be positioned on the anode 122. The first passivation layer 130 may be formed to cover all of the sub-pixels formed on the first substrate 110. The first passivation layer 130 may be made of a material capable of thermal evaporation such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or the like. When the first passivation layer 130 is formed by a thermal evaporation method, it is possible to prevent the organic thin film disposed under the damage.

Meanwhile, as shown in FIG. 3, according to another embodiment, the second passivation layer 135 formed of one or more layers of one or more oxides or nitrides may be further disposed on the first passivation layer 130. The second passivation layer 135 may be formed of a single layer or a plurality of layers of an oxide-based such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or a nitride-based nitride such as silicon nitride (SiNx), among which lithium fluoride (LiF), etc. The compound may be further interposed.

Second Embodiment

4 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention, and FIG. 5 is a layout view of a bus electrode.

Referring to FIG. 4, in the organic light emitting display device according to the second embodiment of the present invention, an organic light emitting diode D connected to a source or a drain of the transistor T and the transistor T formed on the first substrate 210. Subpixels are formed. The first passivation layer 230 made of a transparent metal oxide is formed on the sub pixel. The second passivation layer 235 is formed on the first passivation layer 230. The first substrate 210 is sealed and bonded to the second substrate 280. The bus electrode 240 is formed on the second substrate 280. The transparent auxiliary electrode 250 is formed on the second substrate 280 to cover the bus electrode 240.

The buffer layer 211 may be positioned on the first substrate 210. The buffer layer 211 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the first substrate 210, but may be omitted.

The gate 212 may be located on the buffer layer 211. The gate 212 may be formed in a single layer or a plurality of layers.

The first insulating layer 213 may be positioned on the gate 212. The first insulating layer 213 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 214 may be positioned on the first insulating layer 213. The active layer 214 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 214 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 214 may include an ohmic contact layer to lower the contact resistance.

Source drains 215a and 215b may be disposed on the active layer 214. The source drains 215a and 215b may be made of a single layer or multiple layers.

The second insulating layer 216a may be positioned on the source drains 215a and 215b. The second insulating layer 216a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

One of the source drains 215a and 215b may be disposed on the second insulating layer 216a and may be connected to a shield metal 218 to prevent interference between the source drains 215a and 215b.

The third insulating layer 216b may be positioned on the second insulating layer 216a to increase the flatness. The third insulating layer 216b may include an organic material such as polyimide.

As described above, the transistor T formed on the first substrate 210 has a batam gate type as an example. However, the transistor T formed on the first substrate 210 may be formed not only as a batam gate type but also as a top gate type.

The cathode 217 connected to the source 215a or the drain 215b may be positioned on the third insulating layer 216b of the transistor T.

On the cathode 217, a bank layer 219 having an opening exposing a portion of the cathode 217 may be located. The bank layer 219 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 221 may be positioned on the cathode 217. The organic emission layer 221 may be formed to emit one of red, green, and blue colors depending on the subpixels.

The anode 222 may be positioned on the organic emission layer 221. The anode 222 may be formed thinner than the cathode 217.

The first passivation layer 230 made of a transparent metal oxide may be positioned on the anode 222. The first passivation layer 230 may be formed to cover all of the subpixels formed on the first substrate 210. The first passivation layer 230 may be made of a material capable of thermal deposition, such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or the like. When the first passivation layer 230 is formed by a thermal evaporation method, it is possible to prevent the organic thin film disposed under the damage.

The bus electrode 240 formed in a region corresponding to the bank layer 219 defining an area of the subpixels may be disposed on the second substrate 280. Referring to FIG. 5, the bus electrode 240 is formed in a mesh shape along the bank layer 219 corresponding to the non-light emitting area NEA of the subpixels SP. However, the bus electrode 240 may also be formed in a bar shape along the vertical direction or the horizontal direction of the non-light emitting area NEA.

 The transparent auxiliary electrode 250 formed to cover the bus electrode 240 may be positioned on the second substrate 280. The transparent auxiliary electrode 250 comes into contact with the passivation layer on the first substrate 210 when the first substrate 210 and the second substrate 280 are bonded and sealed. According to the exemplary embodiment, the transparent auxiliary electrode 250 is in contact with the first passivation layer 230 formed on the first substrate 210. However, when the second passivation layer (see FIG. 3) is further formed on the first passivation layer 230 formed on the first substrate 210, the transparent auxiliary electrode 250 may contact the second passivation layer. As such, when the two substrates 210 and 280 are hermetically sealed, electrical resistance between the protective film 230 or 235 formed on each of the substrates 210 and 280 and the electrodes 240 or 250 may lower the resistance of the device. .

Hereinafter, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention will be described.

6 to 9 are views for explaining a method of manufacturing an organic light emitting display device according to an embodiment of the present invention, Figure 10 is an exemplary hierarchical structure of an organic light emitting diode.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention includes forming subpixels in a matrix form on a first substrate and forming a first passivation layer made of a transparent metal oxide to cover the subpixels by a thermal deposition method. It includes a step.

As shown in FIG. 6, a transistor T is formed on the first substrate 310.

A buffer layer 311 is formed on the first substrate 310. The buffer layer 311 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the first substrate 310, but may be omitted. The buffer layer 311 may include silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

The gate 312 is formed on the buffer layer 311. The gate 312 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 312 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 313 is formed on the gate 312. The first insulating layer 313 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 314 is formed on the first insulating layer 313. The active layer 314 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 314 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 314 may include an ohmic contact layer to lower the contact resistance.

Source drains 315a and 315b are formed on the active layer 314. The source drains 315a and 315b may be formed of a single layer or multiple layers. When the source drains 315a and 315b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), Titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof selected from the group consisting of. In addition, when the source drains 315a and 315b are multi-layered, a double layer of molybdenum / aluminum-neodymium and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 316a is formed on the source drains 315a and 315b. The second insulating layer 316a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto. One of the source drains 315a and 315b may be located on the second insulating layer 316a and may be connected to a shield metal 318 to prevent interference between the source drains 115a and 115b.

Next, as shown in FIG. 7, a third insulating film 316b is formed on the second insulating film 316a to increase the flatness. The third insulating layer 316b may include an organic material such as polyimide.

A cathode 317 connected to the source 315a or the drain 315b is formed on the third insulating layer 316b. The material of the cathode 317 may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Alminri (AlNd), but is not limited thereto. In addition, when the lower electrode 317 is selected as the cathode, it is advantageous to form a material having high reflectivity as the material of the cathode.

A bank layer 319 is formed on the cathode 317 with an opening that exposes a portion of the cathode 317. The bank layer 319 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

The organic emission layer 321 is formed on the cathode 317. The organic emission layer 321 may be formed to emit one of red, green, and blue colors depending on the subpixels.

An anode 322 is formed on the organic light emitting layer 321. The material of the anode 322 may be formed of any one of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Tin Zinc Oxide (ITZO), and ZnO doped Al 2 O 3 (AZO), but is not limited thereto. The anode 322 may be formed thinner than the cathode 317.

Next, as shown in FIG. 9, a first passivation layer 330 made of a transparent metal oxide is formed on the anode 322 by thermal evaporation. The first passivation layer 330 may be formed to cover all of the subpixels formed on the first substrate 310. The first passivation layer 330 may be made of a material capable of thermal evaporation such as tungsten trioxide (WO 3), molybdenum trioxide (MoO 3), or the like. Materials capable of thermal evaporation can also be formed from compounds such as lithium fluoride (LiF). As such, when the first passivation layer 330 is formed by the thermal evaporation method, it is possible to prevent the organic thin film disposed under the damage.

Referring to FIG. 10, the organic light emitting diode D may include a cathode 317, an electron injection layer 321a, an electron transport layer 321b, an emission layer 321c, a hole transport layer 321d, a hole injection layer 321e, and an anode. 322 may be included.

The electron injection layer 321a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 321b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The emission layer 321c may include a material emitting red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 321c is red, it includes a host material containing CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 321c is green, the light emitting layer 321c may include a host material including CBP or mCP, and may be formed of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 321c is blue, the light emitting layer 321c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The hole transport layer 321d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 321e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 10, and at least one of the electron injection layer 321a, the electron transport layer 321b, the hole transport layer 321d, and the hole injection layer 321e may be omitted. .

Embodiments of the present invention provide an organic thin film positioned below the anode by forming a protective film by a thermal evaporation method when an inverted organic light emitting display device in which an organic light emitting diode is formed of a cathode, an organic light emitting layer, and an anode. There is an effect that can prevent this damaging problem. In addition, the embodiment of the present invention has an effect of lowering the resistance of the device by the electrical contact between the protective film formed on the first substrate and the electrode formed on the second substrate when sealing the first substrate and the second substrate. have.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic plan view of an organic light emitting display device according to a first embodiment of the present invention;

2 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

3 is a cross-sectional view of an organic light emitting display device according to another embodiment.

4 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

5 is a layout view of a bus electrode.

6 to 9 are views for explaining a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

10 is an exemplary hierarchical structure of an organic light emitting diode.

<Explanation of symbols on main parts of the drawings>

110, 210, 310: first substrate 117, 217, 317: cathode

121, 221, 321: organic light emitting layer 122, 222, 322: anode

130, 230, 330: first protective film

Claims (10)

First substrate; A transistor positioned on the first substrate; A cathode located on the transistor and coupled to the source or drain of the transistor; A bank layer located on the cathode and exposing a portion of the cathode; An organic light emitting layer on the bank layer; An anode positioned on the organic light emitting layer; And The organic light emitting display device is formed to cover the anode and comprises a first protective film made of a transparent metal oxide. The method of claim 1, Located on the transparent metal oxide protective film An organic light emitting display device, wherein the organic light emitting display device further comprises a second passivation layer formed of at least one of oxide and nitride. The method of claim 1, The transparent metal oxide, An organic light emitting display device comprising tungsten oxide or molybdenum oxide. The method of claim 3, The thickness of the anode, An organic light emitting display device, characterized in that formed thinner than the thickness of the cathode. The method of claim 1, Further comprising a second substrate bonded and sealed to the first substrate, And the second substrate includes a bus electrode formed in an area corresponding to a bank layer defining an area of the subpixels. The method of claim 5, Further comprising a transparent auxiliary electrode formed on the second substrate to cover the bus electrode, The transparent auxiliary electrode is in contact with the first passivation layer. Forming subpixels in a matrix form on the first substrate; And Forming a first passivation layer made of a transparent metal oxide so as to cover the subpixels by a thermal evaporation method. The method of claim 7, wherein Located on the transparent metal oxide protective film A method of manufacturing an organic light emitting display device, the method comprising: forming a second passivation layer of at least one oxide or nitride based layer. The method of claim 7, wherein And a second substrate spaced apart from the first substrate. And sealingly bonding the first substrate and the second substrate to each other, And the second substrate comprises a bus electrode formed in an area corresponding to a bank layer defining an area of the sub-pixels. 10. The method of claim 9, The second substrate, Further comprising a transparent auxiliary electrode formed to cover the bus electrode, And the transparent auxiliary electrode is in contact with the second passivation layer.

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