KR101670148B1 - ｐ형 산화물, ｐ형 산화물 제조용 조성물, ｐ형 산화물의 제조 방법, 반도체 소자, 표시 소자, 영상 표시 장치, 및 시스템 - Google Patents

ｐ형 산화물, ｐ형 산화물 제조용 조성물, ｐ형 산화물의 제조 방법, 반도체 소자, 표시 소자, 영상 표시 장치, 및 시스템 Download PDF

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KR101670148B1
KR101670148B1 KR1020147017429A KR20147017429A KR101670148B1 KR 101670148 B1 KR101670148 B1 KR 101670148B1 KR 1020147017429 A KR1020147017429 A KR 1020147017429A KR 20147017429 A KR20147017429 A KR 20147017429A KR 101670148 B1 KR101670148 B1 KR 101670148B1
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type oxide
oxide
type
electrons
state
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KR20140095106A (ko
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유키코 아베
나오유키 우에다
유키 나카무라
미키코 다카다
신지 마츠모토
유지 소네
료이치 사오토메
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가부시키가이샤 리코
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
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  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Semiconductor Memories (AREA)
  • Photovoltaic Devices (AREA)
KR1020147017429A 2011-11-30 2012-11-28 ｐ형 산화물, ｐ형 산화물 제조용 조성물, ｐ형 산화물의 제조 방법, 반도체 소자, 표시 소자, 영상 표시 장치, 및 시스템 Active KR101670148B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011261845 2011-11-30
JPJP-P-2011-261845 2011-11-30
JP2012058668A JP5783094B2 (ja) 2011-11-30 2012-03-15 ｐ型酸化物、ｐ型酸化物製造用組成物、ｐ型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム
JPJP-P-2012-058668 2012-03-15
PCT/JP2012/081429 WO2013081169A1 (en) 2011-11-30 2012-11-28 P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system

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KR20140095106A KR20140095106A (ko) 2014-07-31
KR101670148B1 true KR101670148B1 (ko) 2016-10-27

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US (1) US9536957B2 (OSRAM)
EP (1) EP2786415A4 (OSRAM)
JP (1) JP5783094B2 (OSRAM)
KR (1) KR101670148B1 (OSRAM)
CN (1) CN104094407B (OSRAM)
IN (1) IN2014CN04501A (OSRAM)
TW (1) TWI496294B (OSRAM)
WO (1) WO2013081169A1 (OSRAM)

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JP6907512B2 (ja) * 2015-12-15 2021-07-21 株式会社リコー 電界効果型トランジスタの製造方法
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JP6665536B2 (ja) 2016-01-12 2020-03-13 株式会社リコー 酸化物半導体
JP6701835B2 (ja) 2016-03-11 2020-05-27 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US10403627B2 (en) * 2016-10-11 2019-09-03 Imec Vzw Memory device for a dynamic random access memory
KR102434909B1 (ko) * 2017-08-04 2022-08-19 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함한 표시장치
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US11322627B2 (en) 2018-09-19 2022-05-03 Kabushiki Kaisha Toshiba Solar cell, multi-junction solar cell, solar cell module, and solar power generation system
KR102172210B1 (ko) * 2019-01-04 2020-10-30 한국전력공사 버퍼 일체형 투명전극을 구비한 페로브스카이트 태양전지 및 이의 제조 방법
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US9536957B2 (en) 2017-01-03
CN104094407A (zh) 2014-10-08
CN104094407B (zh) 2017-08-11
TWI496294B (zh) 2015-08-11
WO2013081169A1 (en) 2013-06-06
KR20140095106A (ko) 2014-07-31
TW201330278A (zh) 2013-07-16
JP2013138165A (ja) 2013-07-11
EP2786415A4 (en) 2015-07-08
IN2014CN04501A (OSRAM) 2015-09-11
US20140353648A1 (en) 2014-12-04
EP2786415A1 (en) 2014-10-08
JP5783094B2 (ja) 2015-09-24

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