KR101654548B1 - 태양 전지에서 향상된 광 포획을 위한 시스템 및 방법 - Google Patents
태양 전지에서 향상된 광 포획을 위한 시스템 및 방법 Download PDFInfo
- Publication number
- KR101654548B1 KR101654548B1 KR1020147020992A KR20147020992A KR101654548B1 KR 101654548 B1 KR101654548 B1 KR 101654548B1 KR 1020147020992 A KR1020147020992 A KR 1020147020992A KR 20147020992 A KR20147020992 A KR 20147020992A KR 101654548 B1 KR101654548 B1 KR 101654548B1
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- South Korea
- Prior art keywords
- laser beam
- silicon substrate
- silicon
- solar cell
- pulsed laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161580290P | 2011-12-26 | 2011-12-26 | |
| US61/580,290 | 2011-12-26 | ||
| US201261696725P | 2012-09-04 | 2012-09-04 | |
| US61/696,725 | 2012-09-04 | ||
| PCT/US2012/071677 WO2013101846A1 (en) | 2011-12-26 | 2012-12-26 | Systems and methods for enhanced light trapping in solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140110976A KR20140110976A (ko) | 2014-09-17 |
| KR101654548B1 true KR101654548B1 (ko) | 2016-09-06 |
Family
ID=48698593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147020992A Expired - Fee Related KR101654548B1 (ko) | 2011-12-26 | 2012-12-26 | 태양 전지에서 향상된 광 포획을 위한 시스템 및 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9583651B2 (enExample) |
| JP (1) | JP6383291B2 (enExample) |
| KR (1) | KR101654548B1 (enExample) |
| AU (1) | AU2012362505B2 (enExample) |
| WO (1) | WO2013101846A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4415059A1 (en) * | 2023-02-10 | 2024-08-14 | Trina Solar Co., Ltd | Back contact solar battery and preparation method thereof |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
| JP5865303B2 (ja) * | 2013-07-12 | 2016-02-17 | アイシン精機株式会社 | レーザ処理装置、およびレーザ処理方法 |
| WO2015081341A1 (en) * | 2013-11-29 | 2015-06-04 | Solexel, Inc. | Aluminum oxide passivation for solar cells |
| CN103996747A (zh) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源(太仓)有限公司 | 背面单层氧化铝作为钝化膜的晶体硅太阳能电池制备方法 |
| EP2993699B1 (en) * | 2014-09-04 | 2018-03-21 | IMEC vzw | Method for fabricating crystalline photovoltaic cells |
| WO2017034533A1 (en) * | 2015-08-22 | 2017-03-02 | Tokyo Electron Limited | Substrate backside texturing |
| US9455185B1 (en) | 2015-12-17 | 2016-09-27 | International Business Machines Corporation | Laser anneal of buried metallic interconnects including through silicon vias |
| US9748353B2 (en) * | 2015-12-31 | 2017-08-29 | International Business Machines Corporation | Method of making a gallium nitride device |
| EP3340317B1 (en) * | 2016-10-25 | 2020-04-01 | Shin-Etsu Chemical Co., Ltd | High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell |
| KR102308911B1 (ko) * | 2019-04-26 | 2021-10-07 | 충남대학교산학협력단 | 그라파이트 기판을 이용한 태양 전지 및 이의 제조 방법 |
| CN110739366B (zh) * | 2019-10-16 | 2021-06-25 | 浙江爱旭太阳能科技有限公司 | 一种修复perc太阳能电池背膜激光开槽损伤的方法 |
| CN115995502A (zh) * | 2021-10-25 | 2023-04-21 | 天合光能股份有限公司 | 发射极、选择性发射极电池的制备方法及选择性发射极电池 |
| CN113948588B (zh) * | 2021-11-23 | 2024-12-24 | 兰州大学 | 一种ibc结构锑化镓热光伏电池及其制备方法 |
| CN116936658A (zh) | 2022-06-21 | 2023-10-24 | 浙江晶科能源有限公司 | 背接触太阳能电池及光伏组件 |
| CN118335814A (zh) * | 2024-04-03 | 2024-07-12 | 浙江晶科能源有限公司 | 背接触太阳能电池、光伏组件 |
| CN119653903B (zh) * | 2024-12-03 | 2025-11-25 | 安徽华晟新能源科技股份有限公司 | 背接触太阳能电池及其制备方法 |
Citations (1)
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| KR101023144B1 (ko) * | 2004-02-26 | 2011-03-18 | 삼성에스디아이 주식회사 | 전사법을 이용한 태양전지 및 그 제조방법 |
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| US20120291859A1 (en) * | 2011-05-17 | 2012-11-22 | Christopher Vineis | Multi-Junction Semiconductor Photovoltaic Apparatus and Methods |
| US20130130430A1 (en) | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| WO2012162276A2 (en) | 2011-05-20 | 2012-11-29 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| US20140158193A1 (en) * | 2011-08-09 | 2014-06-12 | Solexel, Inc. | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
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2012
- 2012-12-26 AU AU2012362505A patent/AU2012362505B2/en not_active Ceased
- 2012-12-26 JP JP2014550436A patent/JP6383291B2/ja not_active Expired - Fee Related
- 2012-12-26 WO PCT/US2012/071677 patent/WO2013101846A1/en not_active Ceased
- 2012-12-26 US US13/727,393 patent/US9583651B2/en not_active Expired - Fee Related
- 2012-12-26 KR KR1020147020992A patent/KR101654548B1/ko not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101023144B1 (ko) * | 2004-02-26 | 2011-03-18 | 삼성에스디아이 주식회사 | 전사법을 이용한 태양전지 및 그 제조방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4415059A1 (en) * | 2023-02-10 | 2024-08-14 | Trina Solar Co., Ltd | Back contact solar battery and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2012362505B2 (en) | 2015-08-20 |
| WO2013101846A1 (en) | 2013-07-04 |
| AU2012362505A1 (en) | 2014-08-14 |
| JP6383291B2 (ja) | 2018-08-29 |
| KR20140110976A (ko) | 2014-09-17 |
| JP2015506582A (ja) | 2015-03-02 |
| US20140017846A1 (en) | 2014-01-16 |
| US9583651B2 (en) | 2017-02-28 |
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