JP6383291B2 - 太陽電池の光捕獲性を改善するシステム及び方法 - Google Patents
太陽電池の光捕獲性を改善するシステム及び方法 Download PDFInfo
- Publication number
- JP6383291B2 JP6383291B2 JP2014550436A JP2014550436A JP6383291B2 JP 6383291 B2 JP6383291 B2 JP 6383291B2 JP 2014550436 A JP2014550436 A JP 2014550436A JP 2014550436 A JP2014550436 A JP 2014550436A JP 6383291 B2 JP6383291 B2 JP 6383291B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- solar cell
- laser
- laser beam
- texturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 161
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 106
- 229910052710 silicon Inorganic materials 0.000 description 106
- 239000010703 silicon Substances 0.000 description 106
- 239000010410 layer Substances 0.000 description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 239000002245 particle Substances 0.000 description 27
- 230000005855 radiation Effects 0.000 description 27
- 239000010408 film Substances 0.000 description 26
- 238000002161 passivation Methods 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 230000035515 penetration Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 150000003377 silicon compounds Chemical group 0.000 description 3
- 239000012798 spherical particle Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000003693 cell processing method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000013742 energy transducer activity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161580290P | 2011-12-26 | 2011-12-26 | |
| US61/580,290 | 2011-12-26 | ||
| US201261696725P | 2012-09-04 | 2012-09-04 | |
| US61/696,725 | 2012-09-04 | ||
| PCT/US2012/071677 WO2013101846A1 (en) | 2011-12-26 | 2012-12-26 | Systems and methods for enhanced light trapping in solar cells |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015506582A JP2015506582A (ja) | 2015-03-02 |
| JP2015506582A5 JP2015506582A5 (enExample) | 2016-02-18 |
| JP6383291B2 true JP6383291B2 (ja) | 2018-08-29 |
Family
ID=48698593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014550436A Expired - Fee Related JP6383291B2 (ja) | 2011-12-26 | 2012-12-26 | 太陽電池の光捕獲性を改善するシステム及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9583651B2 (enExample) |
| JP (1) | JP6383291B2 (enExample) |
| KR (1) | KR101654548B1 (enExample) |
| AU (1) | AU2012362505B2 (enExample) |
| WO (1) | WO2013101846A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
| JP5865303B2 (ja) * | 2013-07-12 | 2016-02-17 | アイシン精機株式会社 | レーザ処理装置、およびレーザ処理方法 |
| WO2015081341A1 (en) * | 2013-11-29 | 2015-06-04 | Solexel, Inc. | Aluminum oxide passivation for solar cells |
| CN103996747A (zh) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | 背面单层氧化铝作为钝化膜的晶体硅太阳能电池制备方法 |
| EP2993699B1 (en) * | 2014-09-04 | 2018-03-21 | IMEC vzw | Method for fabricating crystalline photovoltaic cells |
| WO2017034533A1 (en) * | 2015-08-22 | 2017-03-02 | Tokyo Electron Limited | Substrate backside texturing |
| US9455185B1 (en) | 2015-12-17 | 2016-09-27 | International Business Machines Corporation | Laser anneal of buried metallic interconnects including through silicon vias |
| US9748353B2 (en) * | 2015-12-31 | 2017-08-29 | International Business Machines Corporation | Method of making a gallium nitride device |
| EP3340317B1 (en) * | 2016-10-25 | 2020-04-01 | Shin-Etsu Chemical Co., Ltd | High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell |
| KR102308911B1 (ko) * | 2019-04-26 | 2021-10-07 | 충남대학교산학협력단 | 그라파이트 기판을 이용한 태양 전지 및 이의 제조 방법 |
| CN110739366B (zh) * | 2019-10-16 | 2021-06-25 | 浙江爱旭太阳能科技有限公司 | 一种修复perc太阳能电池背膜激光开槽损伤的方法 |
| CN115995502A (zh) * | 2021-10-25 | 2023-04-21 | 天合光能股份有限公司 | 发射极、选择性发射极电池的制备方法及选择性发射极电池 |
| CN113948588B (zh) * | 2021-11-23 | 2024-12-24 | 兰州大学 | 一种ibc结构锑化镓热光伏电池及其制备方法 |
| CN116936658A (zh) | 2022-06-21 | 2023-10-24 | 浙江晶科能源有限公司 | 背接触太阳能电池及光伏组件 |
| CN116093190B (zh) * | 2023-02-10 | 2024-09-20 | 天合光能股份有限公司 | 背接触太阳能电池及其制备方法 |
| CN118335814A (zh) * | 2024-04-03 | 2024-07-12 | 浙江晶科能源有限公司 | 背接触太阳能电池、光伏组件 |
| CN119653903B (zh) * | 2024-12-03 | 2025-11-25 | 安徽华晟新能源科技股份有限公司 | 背接触太阳能电池及其制备方法 |
Family Cites Families (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62293740A (ja) | 1986-06-13 | 1987-12-21 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5011565A (en) | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| JP3035565B2 (ja) | 1991-12-27 | 2000-04-24 | 株式会社半導体エネルギー研究所 | 薄膜太陽電池の作製方法 |
| US5538564A (en) | 1994-03-18 | 1996-07-23 | Regents Of The University Of California | Three dimensional amorphous silicon/microcrystalline silicon solar cells |
| BR9610739A (pt) | 1995-10-05 | 1999-07-13 | Ebara Sola Inc | Célula solar e processo para sua fabricação |
| US5641362A (en) | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
| US6645833B2 (en) | 1997-06-30 | 2003-11-11 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. | Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method |
| US5989977A (en) | 1998-04-20 | 1999-11-23 | Texas Instruments - Acer Incorporated | Shallow trench isolation process |
| AUPP437598A0 (en) | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
| JP3619053B2 (ja) | 1999-05-21 | 2005-02-09 | キヤノン株式会社 | 光電変換装置の製造方法 |
| DE10046170A1 (de) | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| AUPR719701A0 (en) | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Chain link metal interconnect structure |
| US6816316B2 (en) | 2002-02-12 | 2004-11-09 | Visx, Incorporated | Smoothing laser beam integration using optical element motion |
| US7388147B2 (en) | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US9678967B2 (en) * | 2003-05-22 | 2017-06-13 | Callahan Cellular L.L.C. | Information source agent systems and methods for distributed data storage and management using content signatures |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20060060238A1 (en) | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| KR101023144B1 (ko) * | 2004-02-26 | 2011-03-18 | 삼성에스디아이 주식회사 | 전사법을 이용한 태양전지 및 그 제조방법 |
| JP2006032419A (ja) | 2004-07-12 | 2006-02-02 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
| US20060088984A1 (en) | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
| US20060130891A1 (en) | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US20130164883A1 (en) | 2007-10-06 | 2013-06-27 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
| US9508886B2 (en) * | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US20120225515A1 (en) | 2004-11-30 | 2012-09-06 | Solexel, Inc. | Laser doping techniques for high-efficiency crystalline semiconductor solar cells |
| US8399331B2 (en) * | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| FR2881879B1 (fr) | 2005-02-08 | 2007-03-09 | Commissariat Energie Atomique | Procede de realisation de contacts metal/semi-conducteur a travers un dielectrique. |
| EP1763086A1 (en) * | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method |
| US7642205B2 (en) | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| CN102420271B (zh) * | 2005-12-21 | 2016-07-06 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
| KR101084067B1 (ko) * | 2006-01-06 | 2011-11-16 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
| US7737357B2 (en) | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| US7579654B2 (en) * | 2006-05-31 | 2009-08-25 | Corning Incorporated | Semiconductor on insulator structure made using radiation annealing |
| US20100304521A1 (en) | 2006-10-09 | 2010-12-02 | Solexel, Inc. | Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells |
| US8937243B2 (en) * | 2006-10-09 | 2015-01-20 | Solexel, Inc. | Structures and methods for high-efficiency pyramidal three-dimensional solar cells |
| US7857907B2 (en) | 2007-01-25 | 2010-12-28 | Au Optronics Corporation | Methods of forming silicon nanocrystals by laser annealing |
| US20080202577A1 (en) * | 2007-02-16 | 2008-08-28 | Henry Hieslmair | Dynamic design of solar cell structures, photovoltaic modules and corresponding processes |
| DE102007010872A1 (de) * | 2007-03-06 | 2008-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung |
| KR100946797B1 (ko) | 2007-09-07 | 2010-03-11 | 주식회사 엘티에스 | 레이저를 이용한 고효율 태양전지의 제조방법 |
| US9455362B2 (en) | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US7517709B1 (en) | 2007-11-16 | 2009-04-14 | Applied Materials, Inc. | Method of forming backside point contact structures for silicon solar cells |
| JP5248995B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| EP2068369A1 (en) * | 2007-12-03 | 2009-06-10 | Interuniversitair Microelektronica Centrum (IMEC) | Photovoltaic cells having metal wrap through and improved passivation |
| US7951637B2 (en) | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
| JP2012501551A (ja) | 2008-08-27 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | バックコンタクト式太陽電池モジュール |
| US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
| WO2010033744A2 (en) | 2008-09-19 | 2010-03-25 | Applied Materials, Inc. | Methods of making an emitter having a desired dopant profile |
| US20100108130A1 (en) | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
| WO2010057060A2 (en) | 2008-11-13 | 2010-05-20 | Solexel, Inc. | Methods and systems for manufacturing thin-film solar cells |
| KR20100085736A (ko) | 2009-01-21 | 2010-07-29 | 현대중공업 주식회사 | 결정질 실리콘 태양전지 및 이의 제조방법 |
| WO2010091466A1 (en) | 2009-02-11 | 2010-08-19 | Newsouth Innovations Pty Limited | Photovoltaic device structure and method |
| JP5185236B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
| KR101578356B1 (ko) * | 2009-02-25 | 2015-12-17 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
| JP5185157B2 (ja) * | 2009-02-25 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
| DE102009011306A1 (de) * | 2009-03-02 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beidseitig kontaktierte Solarzellen sowie Verfahren zu deren Herstellung |
| US20100224229A1 (en) | 2009-03-09 | 2010-09-09 | Pralle Martin U | Multi-junction semiconductor photovoltaic apparatus and methods |
| KR101145928B1 (ko) | 2009-03-11 | 2012-05-15 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
| KR101627217B1 (ko) * | 2009-03-25 | 2016-06-03 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| JP2010251667A (ja) * | 2009-04-20 | 2010-11-04 | Sanyo Electric Co Ltd | 太陽電池 |
| DE102009018112B3 (de) | 2009-04-20 | 2010-12-16 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
| US20100294349A1 (en) | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
| KR101155563B1 (ko) | 2009-05-27 | 2012-06-19 | 주식회사 효성 | 레이저를 이용한 태양전지 제조방법 |
| KR101139458B1 (ko) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| US8258050B2 (en) * | 2009-07-17 | 2012-09-04 | Hewlett-Packard Development Company, L.P. | Method of making light trapping crystalline structures |
| US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| WO2011072179A2 (en) * | 2009-12-09 | 2011-06-16 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers |
| KR101621980B1 (ko) * | 2010-05-25 | 2016-05-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| EP2577750A4 (en) * | 2010-05-27 | 2014-04-09 | Solexel Inc | LASER PROCESSING FOR THE PRODUCTION OF HIGHLY EFFICIENT THIN SILICONE CRYSTAL SOLAR CELLS |
| US8211731B2 (en) * | 2010-06-07 | 2012-07-03 | Sunpower Corporation | Ablation of film stacks in solar cell fabrication processes |
| KR101292061B1 (ko) | 2010-12-21 | 2013-08-01 | 엘지전자 주식회사 | 박막 태양전지 |
| EP2659518A4 (en) | 2010-12-30 | 2014-09-24 | Solexel Inc | LASER PROCESSING METHOD FOR PHOTOVOTIC SOLAR CELLS |
| US20120291859A1 (en) * | 2011-05-17 | 2012-11-22 | Christopher Vineis | Multi-Junction Semiconductor Photovoltaic Apparatus and Methods |
| US20130130430A1 (en) | 2011-05-20 | 2013-05-23 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| WO2012162276A2 (en) | 2011-05-20 | 2012-11-29 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
| US20140158193A1 (en) * | 2011-08-09 | 2014-06-12 | Solexel, Inc. | Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells |
-
2012
- 2012-12-26 AU AU2012362505A patent/AU2012362505B2/en not_active Ceased
- 2012-12-26 JP JP2014550436A patent/JP6383291B2/ja not_active Expired - Fee Related
- 2012-12-26 WO PCT/US2012/071677 patent/WO2013101846A1/en not_active Ceased
- 2012-12-26 US US13/727,393 patent/US9583651B2/en not_active Expired - Fee Related
- 2012-12-26 KR KR1020147020992A patent/KR101654548B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2012362505B2 (en) | 2015-08-20 |
| WO2013101846A1 (en) | 2013-07-04 |
| AU2012362505A1 (en) | 2014-08-14 |
| KR101654548B1 (ko) | 2016-09-06 |
| KR20140110976A (ko) | 2014-09-17 |
| JP2015506582A (ja) | 2015-03-02 |
| US20140017846A1 (en) | 2014-01-16 |
| US9583651B2 (en) | 2017-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6383291B2 (ja) | 太陽電池の光捕獲性を改善するシステム及び方法 | |
| US9236510B2 (en) | Patterning of silicon oxide layers using pulsed laser ablation | |
| US9768343B2 (en) | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate | |
| US9455362B2 (en) | Laser irradiation aluminum doping for monocrystalline silicon substrates | |
| US9318644B2 (en) | Ion implantation and annealing for thin film crystalline solar cells | |
| US8399331B2 (en) | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication | |
| AU2012355764B2 (en) | Laser contact processes, laser system, and solar cell structures for fabricating solar cells with silicon nanoparticles | |
| US20130130430A1 (en) | Spatially selective laser annealing applications in high-efficiency solar cells | |
| US20120225515A1 (en) | Laser doping techniques for high-efficiency crystalline semiconductor solar cells | |
| US20130164883A1 (en) | Laser annealing applications in high-efficiency solar cells | |
| Zielke et al. | Direct laser texturing for high-efficiency silicon solar cells | |
| CN101689580A (zh) | 太阳能电池 | |
| EP2659518A2 (en) | Laser processing methods for photovoltaic solar cells | |
| WO2009133607A1 (ja) | 光起電力装置およびその製造方法 | |
| EP2472601A2 (en) | Method Of Reducing Laser-Induced Damage In Forming Laser-Processed Contacts | |
| WO2013062741A1 (en) | Back contact through-holes formation process for solar cell fabrication | |
| US20170005206A1 (en) | Patterning of silicon oxide layers using pulsed laser ablation | |
| EP2819181A1 (en) | Laser annealing applications in high-efficiency solar cells | |
| KR101396027B1 (ko) | 고효율 후면 접촉 후면 접합 태양 전지의 이온 주입 및 어닐링 | |
| KR101532721B1 (ko) | 고효율 태양 전지의 공간 선택적 레이저 어닐링 적용 | |
| US20170222086A1 (en) | Laser processing for solar cell base and emitter regions | |
| WO2015081341A1 (en) | Aluminum oxide passivation for solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151224 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151224 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161019 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161107 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170207 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170407 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170508 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171106 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180206 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180406 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180501 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180704 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180803 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6383291 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |