KR101652458B1 - 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 - Google Patents

반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Download PDF

Info

Publication number
KR101652458B1
KR101652458B1 KR1020150033862A KR20150033862A KR101652458B1 KR 101652458 B1 KR101652458 B1 KR 101652458B1 KR 1020150033862 A KR1020150033862 A KR 1020150033862A KR 20150033862 A KR20150033862 A KR 20150033862A KR 101652458 B1 KR101652458 B1 KR 101652458B1
Authority
KR
South Korea
Prior art keywords
metal
substrate
gas
metal element
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150033862A
Other languages
English (en)
Korean (ko)
Other versions
KR20150111840A (ko
Inventor
카즈히로 하라다
아리토 오가와
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 고쿠사이 덴키 filed Critical 가부시키가이샤 히다치 고쿠사이 덴키
Publication of KR20150111840A publication Critical patent/KR20150111840A/ko
Application granted granted Critical
Publication of KR101652458B1 publication Critical patent/KR101652458B1/ko
Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/28202—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • H01L21/02172—
    • H01L21/205—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H01L2924/01111—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Composite Materials (AREA)
KR1020150033862A 2014-03-26 2015-03-11 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 Active KR101652458B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014064064A JP6202681B2 (ja) 2014-03-26 2014-03-26 基板処理装置、半導体装置の製造方法およびプログラム
JPJP-P-2014-064064 2014-03-26

Publications (2)

Publication Number Publication Date
KR20150111840A KR20150111840A (ko) 2015-10-06
KR101652458B1 true KR101652458B1 (ko) 2016-08-30

Family

ID=54191390

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150033862A Active KR101652458B1 (ko) 2014-03-26 2015-03-11 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

Country Status (4)

Country Link
US (1) US9425039B2 (https=)
JP (1) JP6202681B2 (https=)
KR (1) KR101652458B1 (https=)
TW (1) TWI612566B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180111504A (ko) * 2017-03-30 2018-10-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 방법, 기판 처리 장치 및 기록 매체

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6623077B2 (ja) * 2016-02-19 2019-12-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2018095916A (ja) * 2016-12-13 2018-06-21 株式会社日立国際電気 基板処理装置、リソグラフィ用テンプレートの製造方法、プログラム
CN111095564B (zh) * 2017-09-12 2025-12-16 英特尔公司 具有包括晶态合金的金属接触部的半导体器件
US20190220411A1 (en) * 2018-01-17 2019-07-18 Qualcomm Incorporated Efficient partitioning for binning layouts
KR102597980B1 (ko) * 2018-07-26 2023-11-02 도쿄엘렉트론가부시키가이샤 반도체 소자를 위한 강유전체 하프늄 지르코늄계 막을 형성하는 방법
CN112593208B (zh) * 2020-11-25 2022-01-11 北京北方华创微电子装备有限公司 半导体工艺设备
CN113140483A (zh) * 2021-03-03 2021-07-20 上海璞芯科技有限公司 一种晶圆的传片方法和传片平台
US11908893B2 (en) * 2021-08-30 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060237796A1 (en) * 2005-04-21 2006-10-26 International Business Machines Corporation Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
US20130221445A1 (en) * 2012-02-27 2013-08-29 Yu Lei Atomic Layer Deposition Methods For Metal Gate Electrodes

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273350A (ja) * 2002-03-15 2003-09-26 Nec Corp 半導体装置及びその製造方法
DE102004022602A1 (de) 2004-05-07 2005-12-15 Infineon Technologies Ag Verfahren zur Herstellung eines Grabenkondensators, Verfahren zur Herstellung einer Speicherzelle, Grabenkondensator und Speicherzelle
JP5384291B2 (ja) * 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP5774822B2 (ja) 2009-05-25 2015-09-09 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
US9472637B2 (en) * 2010-01-07 2016-10-18 Hitachi Kokusai Electric Inc. Semiconductor device having electrode made of high work function material and method of manufacturing the same
JP5721952B2 (ja) 2010-01-07 2015-05-20 株式会社日立国際電気 半導体装置、半導体装置の製造方法および基板処理装置
JP5702584B2 (ja) * 2010-11-30 2015-04-15 株式会社日立国際電気 半導体デバイスの製造方法および基板処理装置
JP6022228B2 (ja) * 2011-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6147480B2 (ja) * 2012-09-26 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9059089B2 (en) * 2013-02-28 2015-06-16 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060237796A1 (en) * 2005-04-21 2006-10-26 International Business Machines Corporation Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
US20130221445A1 (en) * 2012-02-27 2013-08-29 Yu Lei Atomic Layer Deposition Methods For Metal Gate Electrodes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180111504A (ko) * 2017-03-30 2018-10-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 방법, 기판 처리 장치 및 기록 매체
CN108695193A (zh) * 2017-03-30 2018-10-23 株式会社日立国际电气 基板处理方法、记录介质和基板处理装置
KR101999230B1 (ko) * 2017-03-30 2019-07-11 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 기판 처리 장치 및 기록 매체
CN108695193B (zh) * 2017-03-30 2022-03-18 株式会社国际电气 基板处理方法、记录介质和基板处理装置

Also Published As

Publication number Publication date
TW201543557A (zh) 2015-11-16
KR20150111840A (ko) 2015-10-06
US9425039B2 (en) 2016-08-23
US20150279663A1 (en) 2015-10-01
JP6202681B2 (ja) 2017-09-27
TWI612566B (zh) 2018-01-21
JP2015185825A (ja) 2015-10-22

Similar Documents

Publication Publication Date Title
KR101652458B1 (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US9418855B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US9728409B2 (en) Method of manufacturing semiconductor device
KR101537946B1 (ko) 반도체 장치의 제조 방법, 기판 처리 방법, 기억 매체 및 기판 처리 장치
JP6022638B2 (ja) 半導体装置の製造方法、基板処理装置及びプログラム
KR101638386B1 (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
US9653301B2 (en) Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same
JP2011066263A (ja) 半導体装置の製造方法および基板処理装置
JP2018080349A (ja) ＴｉＮ系膜およびその形成方法
JP2012059834A (ja) 半導体装置の製造方法
US12018370B2 (en) Film-forming method and film-forming apparatus
JP2010080737A (ja) 半導体装置の製造方法及び基板処理装置
JP6084070B2 (ja) 半導体装置の製造方法、プログラムおよび基板処理装置
JP5801632B2 (ja) 半導体装置の製造方法及び基板処理装置
JP6108530B2 (ja) 半導体装置の製造方法、プログラムおよび基板処理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20190730

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000