KR101632593B1 - 경화성 오가노폴리실록산 조성물, 광 반도체 소자 밀봉제 및 광 반도체 장치 - Google Patents

경화성 오가노폴리실록산 조성물, 광 반도체 소자 밀봉제 및 광 반도체 장치 Download PDF

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KR101632593B1
KR101632593B1 KR1020117012197A KR20117012197A KR101632593B1 KR 101632593 B1 KR101632593 B1 KR 101632593B1 KR 1020117012197 A KR1020117012197 A KR 1020117012197A KR 20117012197 A KR20117012197 A KR 20117012197A KR 101632593 B1 KR101632593 B1 KR 101632593B1
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optical semiconductor
mole
component
semiconductor device
silicon
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KR20110089164A (ko
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마코토 요시타케
다카시 사가와
마사요시 데라다
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다우 코닝 도레이 캄파니 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
KR1020117012197A 2008-10-31 2009-10-30 경화성 오가노폴리실록산 조성물, 광 반도체 소자 밀봉제 및 광 반도체 장치 Active KR101632593B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-281243 2008-10-31
JP2008281243 2008-10-31

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KR20110089164A KR20110089164A (ko) 2011-08-04
KR101632593B1 true KR101632593B1 (ko) 2016-06-22

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US (1) US8946353B2 (enExample)
EP (1) EP2352794A1 (enExample)
JP (1) JP5769622B2 (enExample)
KR (1) KR101632593B1 (enExample)
CN (1) CN102197092A (enExample)
MY (1) MY156374A (enExample)
TW (1) TWI480337B (enExample)
WO (1) WO2010050625A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
US9379296B2 (en) * 2010-01-25 2016-06-28 Lg Chem, Ltd. Silicone resin
KR20110115846A (ko) * 2010-04-16 2011-10-24 서울반도체 주식회사 Ｌｅｄ 패키지 및 그 제조 방법
KR101274418B1 (ko) * 2010-06-24 2013-06-17 세키스이가가쿠 고교가부시키가이샤 광 반도체 장치용 밀봉제 및 이를 이용한 광 반도체 장치
KR20130033924A (ko) * 2010-07-27 2013-04-04 가부시키가이샤 아데카 반도체 봉지용 경화성 조성물
JP2012222202A (ja) * 2011-04-11 2012-11-12 Sekisui Chem Co Ltd 光半導体装置用ダイボンド材及びそれを用いた光半導体装置
EP2784126B1 (en) 2011-11-25 2019-03-13 LG Chem, Ltd. Curable composition
KR101334349B1 (ko) * 2011-12-15 2013-11-29 한국과학기술연구원 가열 경화성 실록산 봉지재 조성물
JP5922463B2 (ja) * 2012-03-30 2016-05-24 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
GB201212782D0 (en) * 2012-07-18 2012-08-29 Dow Corning Organosiloxane compositions
JP5819787B2 (ja) * 2012-07-19 2015-11-24 信越化学工業株式会社 硬化性シリコーン樹脂組成物
JP2015528046A (ja) * 2012-07-27 2015-09-24 エルジー・ケム・リミテッド 硬化性組成物
KR101560047B1 (ko) * 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
US9117757B2 (en) * 2012-10-16 2015-08-25 Brewer Science Inc. Silicone polymers with high refractive indices and extended pot life
JP6084808B2 (ja) * 2012-10-24 2017-02-22 東レ・ダウコーニング株式会社 オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6157085B2 (ja) 2012-10-24 2017-07-05 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6081774B2 (ja) * 2012-10-30 2017-02-15 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6168754B2 (ja) * 2012-11-16 2017-07-26 アイカ工業株式会社 付加型シリコーン樹脂組成物および光半導体装置用封止剤
KR20150103707A (ko) * 2012-12-28 2015-09-11 다우 코닝 도레이 캄파니 리미티드 경화성 실리콘 조성물, 이의 경화물 및 광반도체 장치
JP6105966B2 (ja) * 2013-02-15 2017-03-29 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
US9470395B2 (en) 2013-03-15 2016-10-18 Abl Ip Holding Llc Optic for a light source
KR101667839B1 (ko) * 2013-04-04 2016-10-19 주식회사 엘지화학 경화성 조성물
CN103232707B (zh) * 2013-04-19 2015-12-09 深圳新宙邦科技股份有限公司 可固化硅橡胶组合物及其固化产品与涂覆固化方法
CA2911523C (en) 2013-05-10 2018-10-02 Abl Ip Holding Llc Silicone optics
KR20140140836A (ko) * 2013-05-30 2014-12-10 엘지이노텍 주식회사 발광소자 패키지
JP2015113348A (ja) * 2013-12-06 2015-06-22 信越化学工業株式会社 硬化性組成物および光半導体装置
WO2015098072A1 (en) * 2013-12-27 2015-07-02 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, member for transducers
EP3106494A4 (en) 2014-03-12 2017-10-18 The Yokohama Rubber Co., Ltd. Curable resin composition
KR20170015357A (ko) * 2014-06-04 2017-02-08 다우 코닝 도레이 캄파니 리미티드 오르가노실록산, 경화성 실리콘 조성물 및 반도체 장치
CN105199397B (zh) * 2014-06-17 2018-05-08 广州慧谷化学有限公司 一种可固化的有机聚硅氧烷组合物及半导体器件
JP6678388B2 (ja) * 2014-12-25 2020-04-08 信越化学工業株式会社 硬化性シリコーン樹脂組成物
CN105694047B (zh) * 2016-04-26 2018-09-25 烟台德邦先进硅材料有限公司 主链含环状结构改性有机硅聚合物及其制备方法
US9893250B1 (en) * 2016-12-16 2018-02-13 Nichia Corporation Light emitting device having silicone resin-based sealing member
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JP6764390B2 (ja) * 2017-11-02 2020-09-30 信越化学工業株式会社 ダイボンディング用シリコーン組成物、その硬化物、及び発光ダイオード素子
DE102019134728A1 (de) * 2019-12-17 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optische komponente, optoelektronisches halbleiterbauteil und verfahren zur herstellung einer optischen komponente
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JP2023034815A (ja) 2021-08-31 2023-03-13 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、封止材、及び光半導体装置
JP2024138210A (ja) 2023-03-08 2024-10-08 デュポン スペシャルティ マテリアルズ コリア リミテッド 高チキソ性硬化性シリコーン組成物及びその硬化物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007327019A (ja) * 2006-05-11 2007-12-20 Dow Corning Toray Co Ltd 接着促進剤、硬化性オルガノポリシロキサン組成物、および半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661210A (en) * 1996-09-25 1997-08-26 Dow Corning Corporation Optically clear liquid silicone rubber
JP4040858B2 (ja) 2001-10-19 2008-01-30 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
JP4766222B2 (ja) 2003-03-12 2011-09-07 信越化学工業株式会社 発光半導体被覆保護材及び発光半導体装置
JP4908736B2 (ja) 2003-10-01 2012-04-04 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2006063092A (ja) 2004-07-29 2006-03-09 Dow Corning Toray Co Ltd 硬化性オルガノポリシロキサン組成物、その硬化方法、光半導体装置および接着促進剤
JP4676735B2 (ja) * 2004-09-22 2011-04-27 東レ・ダウコーニング株式会社 光半導体装置の製造方法および光半導体装置
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
JP5392805B2 (ja) * 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
JP4872296B2 (ja) 2005-09-30 2012-02-08 日亜化学工業株式会社 シリコーンゴム封止型発光装置、及び該発光装置の製造方法
EP1987084B1 (en) 2006-02-24 2014-11-05 Dow Corning Corporation Light emitting device encapsulated with silicones and curable silicone compositions for preparing the silicones
JP5202822B2 (ja) 2006-06-23 2013-06-05 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007327019A (ja) * 2006-05-11 2007-12-20 Dow Corning Toray Co Ltd 接着促進剤、硬化性オルガノポリシロキサン組成物、および半導体装置

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WO2010050625A1 (en) 2010-05-06
EP2352794A1 (en) 2011-08-10
CN102197092A (zh) 2011-09-21
MY156374A (en) 2016-02-15
US8946353B2 (en) 2015-02-03
JP2012507582A (ja) 2012-03-29
KR20110089164A (ko) 2011-08-04
TW201033288A (en) 2010-09-16
JP5769622B2 (ja) 2015-08-26
US20110254047A1 (en) 2011-10-20
TWI480337B (zh) 2015-04-11

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