KR101622613B1 - 주사 전자 현미경 - Google Patents

주사 전자 현미경 Download PDF

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KR101622613B1
KR101622613B1 KR1020147018326A KR20147018326A KR101622613B1 KR 101622613 B1 KR101622613 B1 KR 101622613B1 KR 1020147018326 A KR1020147018326 A KR 1020147018326A KR 20147018326 A KR20147018326 A KR 20147018326A KR 101622613 B1 KR101622613 B1 KR 101622613B1
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South Korea
Prior art keywords
pattern
signal waveform
sample
scanning
electron
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English (en)
Korean (ko)
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KR20140109920A (ko
Inventor
도시유키 요코스카
이찬
히데유키 가즈미
히로시 마키노
유즈루 미즈하라
미키 이사와
미치오 하타노
요시노리 모모노이
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20140109920A publication Critical patent/KR20140109920A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0048—Charging arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2815—Depth profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
KR1020147018326A 2012-03-28 2013-02-18 주사 전자 현미경 Active KR101622613B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012072710A JP5932428B2 (ja) 2012-03-28 2012-03-28 走査電子顕微鏡
JPJP-P-2012-072710 2012-03-28
PCT/JP2013/053790 WO2013145924A1 (ja) 2012-03-28 2013-02-18 走査電子顕微鏡

Publications (2)

Publication Number Publication Date
KR20140109920A KR20140109920A (ko) 2014-09-16
KR101622613B1 true KR101622613B1 (ko) 2016-05-20

Family

ID=49259206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147018326A Active KR101622613B1 (ko) 2012-03-28 2013-02-18 주사 전자 현미경

Country Status (4)

Country Link
US (1) US9472376B2 (enExample)
JP (1) JP5932428B2 (enExample)
KR (1) KR101622613B1 (enExample)
WO (1) WO2013145924A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9330884B1 (en) * 2014-11-11 2016-05-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dome detection for charged particle beam device
JP2019185972A (ja) 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 走査電子顕微鏡システム及びパターンの深さ計測方法
JP2019184354A (ja) * 2018-04-06 2019-10-24 株式会社日立ハイテクノロジーズ 電子顕微鏡装置、電子顕微鏡装置を用いた検査システム及び電子顕微鏡装置を用いた検査方法
JP7150634B2 (ja) * 2019-02-21 2022-10-11 株式会社荏原製作所 電子線照射装置および電子ビームの位置合わせ方法
JP2021005497A (ja) * 2019-06-26 2021-01-14 キオクシア株式会社 電子顕微鏡およびビーム照射方法
JP7149906B2 (ja) 2019-08-07 2022-10-07 株式会社日立ハイテク 走査電子顕微鏡及びパタン計測方法
JP7218034B1 (ja) * 2022-11-04 2023-02-06 株式会社Photo electron Soul 局所観察方法、プログラム、記録媒体および電子線適用装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090001279A1 (en) * 2007-06-29 2009-01-01 Atsushi Kobaru Charged particle beam apparatus
JP2010175249A (ja) 2009-01-27 2010-08-12 Hitachi High-Technologies Corp 試料高さ測定方法及び試料高さ測定装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327292A (en) * 1980-05-13 1982-04-27 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
JPH01115042A (ja) * 1987-10-28 1989-05-08 Hitachi Ltd 走査型電子顕微鏡の試料台
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0529424A (ja) 1991-07-19 1993-02-05 Fujitsu Ltd 半導体装置の検査方法
DE69233781D1 (de) * 1991-11-27 2010-04-01 Hitachi Ltd Elektronenstrahlgerät
JPH05259240A (ja) * 1992-03-11 1993-10-08 Matsushita Electron Corp 半導体装置の評価方法
JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP4418304B2 (ja) 2004-06-03 2010-02-17 株式会社日立ハイテクノロジーズ 試料観察方法
JP2008004376A (ja) 2006-06-22 2008-01-10 Seiko Epson Corp デバイス、薄膜形成方法及びデバイスの製造方法並びに電子機器
TWI585806B (zh) * 2008-04-11 2017-06-01 荏原製作所股份有限公司 試料觀察方法與裝置，及使用該方法與裝置之檢查方法與裝置
JP2010118414A (ja) 2008-11-11 2010-05-27 Topcon Corp 半導体検査装置
JP5537288B2 (ja) * 2010-06-30 2014-07-02 株式会社日立ハイテクノロジーズ 電子ビームの照射方法及び走査電子顕微鏡

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090001279A1 (en) * 2007-06-29 2009-01-01 Atsushi Kobaru Charged particle beam apparatus
JP2010175249A (ja) 2009-01-27 2010-08-12 Hitachi High-Technologies Corp 試料高さ測定方法及び試料高さ測定装置

Also Published As

Publication number Publication date
WO2013145924A1 (ja) 2013-10-03
US20150008322A1 (en) 2015-01-08
KR20140109920A (ko) 2014-09-16
JP2013206641A (ja) 2013-10-07
US9472376B2 (en) 2016-10-18
JP5932428B2 (ja) 2016-06-08

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