KR101613001B1 - Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재 - Google Patents

Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재 Download PDF

Info

Publication number
KR101613001B1
KR101613001B1 KR1020140015941A KR20140015941A KR101613001B1 KR 101613001 B1 KR101613001 B1 KR 101613001B1 KR 1020140015941 A KR1020140015941 A KR 1020140015941A KR 20140015941 A KR20140015941 A KR 20140015941A KR 101613001 B1 KR101613001 B1 KR 101613001B1
Authority
KR
South Korea
Prior art keywords
alloy
target material
sputtering target
atomic
powder
Prior art date
Application number
KR1020140015941A
Other languages
English (en)
Korean (ko)
Other versions
KR20140103061A (ko
Inventor
히데오 무라타
마사시 가미나다
게이스케 이노우에
Original Assignee
히타치 긴조쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히타치 긴조쿠 가부시키가이샤 filed Critical 히타치 긴조쿠 가부시키가이샤
Publication of KR20140103061A publication Critical patent/KR20140103061A/ko
Application granted granted Critical
Publication of KR101613001B1 publication Critical patent/KR101613001B1/ko

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020140015941A 2013-02-15 2014-02-12 Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재 KR101613001B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-027501 2013-02-15
JP2013027501 2013-02-15

Publications (2)

Publication Number Publication Date
KR20140103061A KR20140103061A (ko) 2014-08-25
KR101613001B1 true KR101613001B1 (ko) 2016-04-15

Family

ID=51305276

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140015941A KR101613001B1 (ko) 2013-02-15 2014-02-12 Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재

Country Status (4)

Country Link
JP (1) JP6284004B2 (zh)
KR (1) KR101613001B1 (zh)
CN (1) CN103990802B (zh)
TW (1) TWI548765B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101953493B1 (ko) * 2014-09-30 2019-02-28 제이엑스금속주식회사 스퍼터링 타깃용 모합금 및 스퍼터링 타깃의 제조 방법
JP7419885B2 (ja) 2019-03-20 2024-01-23 株式会社プロテリアル Ｍｏ合金ターゲット材およびその製造方法
CN110670032B (zh) * 2019-10-29 2021-10-01 金堆城钼业股份有限公司 一种钼镍铜多元合金溅射靶材及其制备方法
CN114293160A (zh) * 2021-12-20 2022-04-08 洛阳高新四丰电子材料有限公司 一种钼合金溅射靶材的制备工艺
CN114959397B (zh) * 2022-04-28 2023-04-07 长沙惠科光电有限公司 合金靶材及其制备方法、应用、阵列基板
CN114921761B (zh) * 2022-05-17 2023-01-17 广东欧莱高新材料股份有限公司 一种用于高世代高清液晶显示的高纯多元合金溅射镀膜材料
CN115161603B (zh) * 2022-05-17 2023-02-21 广东欧莱高新材料股份有限公司 高世代高清液晶显示用高纯多元合金旋转溅射靶的生产工艺
CN114934260B (zh) * 2022-05-23 2024-02-13 安泰天龙钨钼科技有限公司 一种钼合金靶材及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001316808A (ja) 2000-05-09 2001-11-16 Toshiba Corp スパッタリングターゲット
JP2010132974A (ja) * 2008-12-04 2010-06-17 Nippon Steel Materials Co Ltd Ｎｉ−Ｍｏ系合金スパッタリングターゲット板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
US7832619B2 (en) * 2004-02-27 2010-11-16 Howmet Corporation Method of making sputtering target
WO2006117145A2 (en) * 2005-05-05 2006-11-09 H.C. Starck Gmbh Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
CN101981224B (zh) * 2008-03-28 2012-08-22 Jx日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
EP2277191A1 (en) * 2008-04-28 2011-01-26 H. C. Starck, Inc. Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof
US8449818B2 (en) * 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001316808A (ja) 2000-05-09 2001-11-16 Toshiba Corp スパッタリングターゲット
JP2010132974A (ja) * 2008-12-04 2010-06-17 Nippon Steel Materials Co Ltd Ｎｉ−Ｍｏ系合金スパッタリングターゲット板

Also Published As

Publication number Publication date
CN103990802A (zh) 2014-08-20
CN103990802B (zh) 2016-02-17
JP6284004B2 (ja) 2018-02-28
TWI548765B (zh) 2016-09-11
KR20140103061A (ko) 2014-08-25
TW201441399A (zh) 2014-11-01
JP2014177696A (ja) 2014-09-25

Similar Documents

Publication Publication Date Title
KR101613001B1 (ko) Mo 합금 스퍼터링 타깃재의 제조 방법 및 Mo 합금 스퍼터링 타깃재
JP6369750B2 (ja) 積層配線膜およびその製造方法ならびにＮｉ合金スパッタリングターゲット材
TWI447250B (zh) 鉬合金濺鍍靶材的製造方法及鉬合金濺鍍靶材
CN108242276B (zh) 层叠布线膜及其制造方法
KR101804660B1 (ko) 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재
KR20190010701A (ko) 전자 부품용 적층 배선막 및 피복층 형성용 스퍼터링 타깃재
JP6376438B2 (ja) Ｃｕ−Ｍｎ合金スパッタリングターゲット材およびその製造方法
JP6292471B2 (ja) 電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
JP6706418B2 (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6380837B2 (ja) 被覆層形成用スパッタリングターゲット材およびその製造方法
KR101597018B1 (ko) 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190319

Year of fee payment: 4