KR101605356B1 - 하전 입자빔 묘화 장치 및 하전 입자빔의 조사량 체크 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔의 조사량 체크 방법 Download PDF

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KR101605356B1
KR101605356B1 KR1020130141559A KR20130141559A KR101605356B1 KR 101605356 B1 KR101605356 B1 KR 101605356B1 KR 1020130141559 A KR1020130141559 A KR 1020130141559A KR 20130141559 A KR20130141559 A KR 20130141559A KR 101605356 B1 KR101605356 B1 KR 101605356B1
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South Korea
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dose
irradiation
particle beam
charged particle
density
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KR20140065353A (ko
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야스오 카토
미즈나 스가누마
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가부시키가이샤 뉴플레어 테크놀로지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020130141559A 2012-11-21 2013-11-20 하전 입자빔 묘화 장치 및 하전 입자빔의 조사량 체크 방법 Active KR101605356B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012255312A JP6076708B2 (ja) 2012-11-21 2012-11-21 荷電粒子ビーム描画装置及び荷電粒子ビームの照射量チェック方法
JPJP-P-2012-255312 2012-11-21

Publications (2)

Publication Number Publication Date
KR20140065353A KR20140065353A (ko) 2014-05-29
KR101605356B1 true KR101605356B1 (ko) 2016-03-22

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KR1020130141559A Active KR101605356B1 (ko) 2012-11-21 2013-11-20 하전 입자빔 묘화 장치 및 하전 입자빔의 조사량 체크 방법

Country Status (4)

Country Link
US (1) US20140138527A1 (enExample)
JP (1) JP6076708B2 (enExample)
KR (1) KR101605356B1 (enExample)
TW (1) TWI505316B (enExample)

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Publication number Priority date Publication date Assignee Title
JP6283180B2 (ja) 2013-08-08 2018-02-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
NL2014314B1 (en) * 2014-02-21 2016-07-19 Mapper Lithography Ip Bv Proximity effect correction in a charged particle lithography system.
JP6428518B2 (ja) 2014-09-05 2018-11-28 株式会社ニューフレアテクノロジー データ生成装置、エネルギービーム描画装置、及びエネルギービーム描画方法
JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2017073461A (ja) * 2015-10-07 2017-04-13 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10748744B1 (en) 2019-05-24 2020-08-18 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density
US11756765B2 (en) 2019-05-24 2023-09-12 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

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JP2012174812A (ja) 2011-02-18 2012-09-10 Nuflare Technology Inc 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法

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JP2012174812A (ja) 2011-02-18 2012-09-10 Nuflare Technology Inc 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法

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TWI505316B (zh) 2015-10-21
TW201432772A (zh) 2014-08-16
JP2014103308A (ja) 2014-06-05
JP6076708B2 (ja) 2017-02-08
US20140138527A1 (en) 2014-05-22
KR20140065353A (ko) 2014-05-29

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