KR101597869B1 - 묘화 방법 및 물품의 제조 방법 - Google Patents

묘화 방법 및 물품의 제조 방법 Download PDF

Info

Publication number
KR101597869B1
KR101597869B1 KR1020130007497A KR20130007497A KR101597869B1 KR 101597869 B1 KR101597869 B1 KR 101597869B1 KR 1020130007497 A KR1020130007497 A KR 1020130007497A KR 20130007497 A KR20130007497 A KR 20130007497A KR 101597869 B1 KR101597869 B1 KR 101597869B1
Authority
KR
South Korea
Prior art keywords
cut
patterns
pattern
pitch
sets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020130007497A
Other languages
English (en)
Korean (ko)
Other versions
KR20130088772A (ko
Inventor
고우이치로오 츠지타
마사토 무라키
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20130088772A publication Critical patent/KR20130088772A/ko
Application granted granted Critical
Publication of KR101597869B1 publication Critical patent/KR101597869B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
KR1020130007497A 2012-01-31 2013-01-23 묘화 방법 및 물품의 제조 방법 Expired - Fee Related KR101597869B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012018634A JP6087506B2 (ja) 2012-01-31 2012-01-31 描画方法及び物品の製造方法
JPJP-P-2012-018634 2012-01-31

Publications (2)

Publication Number Publication Date
KR20130088772A KR20130088772A (ko) 2013-08-08
KR101597869B1 true KR101597869B1 (ko) 2016-02-25

Family

ID=48836788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130007497A Expired - Fee Related KR101597869B1 (ko) 2012-01-31 2013-01-23 묘화 방법 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US9690201B2 (https=)
JP (1) JP6087506B2 (https=)
KR (1) KR101597869B1 (https=)
CN (1) CN103226292B (https=)
TW (1) TWI483290B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11246951B2 (en) 2005-01-31 2022-02-15 S. Edward Neister Method and apparatus for sterilizing and disinfecting air and surfaces and protecting a zone from external microbial contamination
US9501601B2 (en) * 2013-03-14 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout optimization of a main pattern and a cut pattern
JP6215061B2 (ja) * 2014-01-14 2017-10-18 株式会社アドバンテスト 電子ビーム露光装置
JP6211435B2 (ja) * 2014-02-26 2017-10-11 株式会社アドバンテスト 半導体装置の製造方法
US9318564B2 (en) 2014-05-19 2016-04-19 Qualcomm Incorporated High density static random access memory array having advanced metal patterning
US9897908B2 (en) * 2014-06-13 2018-02-20 Intel Corporation Ebeam three beam aperture array
EP3155647A4 (en) * 2014-06-13 2018-01-24 Intel Corporation Ebeam universal cutter
EP3155630A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam staggered beam aperture array
EP3161854A4 (en) * 2014-06-25 2018-05-30 Intel Corporation Techniques for forming a compacted array of functional cells
KR102459585B1 (ko) 2014-08-19 2022-10-27 인텔 코포레이션 Ｅ 빔 범용 커터를 이용한 교차 스캔 근접 보정
JP2016122676A (ja) * 2014-12-24 2016-07-07 株式会社アドバンテスト 露光装置および露光方法
JP2016207926A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 露光装置および露光方法
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
JP2017063101A (ja) 2015-09-24 2017-03-30 株式会社アドバンテスト 露光装置および露光方法
US9818623B2 (en) 2016-03-22 2017-11-14 Globalfoundries Inc. Method of forming a pattern for interconnection lines and associated continuity blocks in an integrated circuit
JP2018041790A (ja) 2016-09-06 2018-03-15 株式会社アドバンテスト 露光装置および露光データ構造
US9818641B1 (en) 2016-09-21 2017-11-14 Globalfoundries Inc. Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines
US9786545B1 (en) 2016-09-21 2017-10-10 Globalfoundries Inc. Method of forming ANA regions in an integrated circuit
US9818640B1 (en) 2016-09-21 2017-11-14 Globalfoundries Inc. Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines
US9852986B1 (en) 2016-11-28 2017-12-26 Globalfoundries Inc. Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit
US9812351B1 (en) 2016-12-15 2017-11-07 Globalfoundries Inc. Interconnection cells having variable width metal lines and fully-self aligned continuity cuts
US9887127B1 (en) 2016-12-15 2018-02-06 Globalfoundries Inc. Interconnection lines having variable widths and partially self-aligned continuity cuts
US10043703B2 (en) 2016-12-15 2018-08-07 Globalfoundries Inc. Apparatus and method for forming interconnection lines having variable pitch and variable widths
US10002786B1 (en) 2016-12-15 2018-06-19 Globalfoundries Inc. Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts
JP7474151B2 (ja) * 2020-08-21 2024-04-24 株式会社ニューフレアテクノロジー マルチ電子ビーム描画装置及びマルチ電子ビーム描画方法
JP7455720B2 (ja) * 2020-09-29 2024-03-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム照射装置およびマルチ荷電粒子ビーム照射方法
JP7492929B2 (ja) * 2021-02-19 2024-05-30 株式会社東芝 半導体装置、荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム照射装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253052B1 (ko) 1996-04-26 2000-06-01 니시무로 타이죠 패턴형성방법 및 패턴형성장치
JP2011258842A (ja) * 2010-06-10 2011-12-22 Nikon Corp 荷電粒子線露光装置及びデバイス製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GR871029B (en) * 1986-07-14 1987-11-02 Genetics Inst Novel osteoinductive factors
JPH07142352A (ja) * 1993-11-17 1995-06-02 Nec Corp 電子ビーム描画装置および電子ビーム描画方法
JPH10284377A (ja) * 1997-04-07 1998-10-23 Nikon Corp 露光方法及び該方法を用いたデバイスの製造方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
US20040026634A1 (en) * 2002-08-08 2004-02-12 Takao Utsumi Electron beam proximity exposure apparatus
JP2004286914A (ja) * 2003-03-20 2004-10-14 Konica Minolta Holdings Inc 電子ビーム描画方法、母型の製造方法、母型、金型の製造方法、金型及び光学素子
US7446352B2 (en) * 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US7691549B1 (en) * 2007-02-15 2010-04-06 Kla-Tencor Technologies Corporation Multiple exposure lithography technique and method
WO2009147202A1 (en) * 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
JP2009295893A (ja) 2008-06-09 2009-12-17 Dainippon Printing Co Ltd 近接効果補正方法及びその方法を用いた電子線描画装置
KR20100076317A (ko) 2008-12-26 2010-07-06 주식회사 하이닉스반도체 반도체 소자의 패턴 형성방법
JP2010283220A (ja) * 2009-06-05 2010-12-16 Sumco Corp 固体撮像素子用エピタキシャル基板の製造方法、固体撮像素子の製造方法
KR20110112723A (ko) * 2010-04-07 2011-10-13 주식회사 하이닉스반도체 사선 구조의 액티브 형성을 위한 컷팅 마스크
KR101154004B1 (ko) 2010-04-30 2012-06-07 에스케이하이닉스 주식회사 스페이서 패터닝 공정의 패턴 레이아웃 검증 방법
JP2012023316A (ja) * 2010-07-16 2012-02-02 Canon Inc 荷電粒子線描画装置および物品の製造方法
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP6215061B2 (ja) * 2014-01-14 2017-10-18 株式会社アドバンテスト 電子ビーム露光装置
JP6211435B2 (ja) * 2014-02-26 2017-10-11 株式会社アドバンテスト 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253052B1 (ko) 1996-04-26 2000-06-01 니시무로 타이죠 패턴형성방법 및 패턴형성장치
JP2011258842A (ja) * 2010-06-10 2011-12-22 Nikon Corp 荷電粒子線露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JP6087506B2 (ja) 2017-03-01
US20130196517A1 (en) 2013-08-01
CN103226292B (zh) 2015-04-22
TW201331986A (zh) 2013-08-01
US9690201B2 (en) 2017-06-27
TWI483290B (zh) 2015-05-01
KR20130088772A (ko) 2013-08-08
JP2013157547A (ja) 2013-08-15
CN103226292A (zh) 2013-07-31

Similar Documents

Publication Publication Date Title
KR101597869B1 (ko) 묘화 방법 및 물품의 제조 방법
US20120219914A1 (en) Drawing apparatus, drawing method and method of manufacturing article
KR102258509B1 (ko) 양방향 더블 패스 멀티빔 기록
US7772575B2 (en) Stencil design and method for cell projection particle beam lithography
US5288567A (en) Stencil mask and charged particle beam exposure method and apparatus using the stencil mask
US20150311031A1 (en) Multi-Beam Tool for Cutting Patterns
US9530616B2 (en) Blanking aperture array and charged particle beam writing apparatus
KR102410976B1 (ko) 멀티 하전 입자 빔 묘화 장치 및 멀티 하전 입자 빔 묘화 방법
JP2014216570A (ja) 描画装置、および物品の製造方法
JP2011258842A (ja) 荷電粒子線露光装置及びデバイス製造方法
US8759797B2 (en) Drawing apparatus, drawing method, and method of manufacturing article
JP2014082289A (ja) 描画装置、および物品の製造方法
Eder-Kapl et al. Projection mask-less lithography (PML2): First results from the multi beam blanking demonstrator
US7173262B2 (en) Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method
US10340120B2 (en) Blanking aperture array, method for manufacturing blanking aperture array, and multi-charged particle beam writing apparatus
US20150129779A1 (en) Drawing apparatus, and method of manufacturing article
US6110627A (en) Charged-particle-beam transfer methods exhibiting reduced resist-heating effects
US6444399B1 (en) Methods for achieving reduced effects of overlayer and subfield-stitching errors in charged-particle-beam microlithography, and device manufacturing methods comprising such microlithography methods
US6653644B1 (en) Pattern exposure method and apparatus
KR20220144842A (ko) 검사 장치
US20020036272A1 (en) Charged-particle-beam microlithography methods and apparatus providing reduced reticle heating
KR102915807B1 (ko) 멀티 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
US6300023B1 (en) Microlithographic pattern-transfer methods for large segmented reticles, and device manufacturing methods using same
US20260066219A1 (en) Charged particle beam writing method, charged particle beam writing apparatus, and non-transitory computer-readable storage medium storing a program
JP2006303541A (ja) 半導体集積回路装置の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190215

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200220

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200220

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000