KR101568043B1 - 웨이퍼 레벨 패키지 - Google Patents

웨이퍼 레벨 패키지 Download PDF

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Publication number
KR101568043B1
KR101568043B1 KR1020090027087A KR20090027087A KR101568043B1 KR 101568043 B1 KR101568043 B1 KR 101568043B1 KR 1020090027087 A KR1020090027087 A KR 1020090027087A KR 20090027087 A KR20090027087 A KR 20090027087A KR 101568043 B1 KR101568043 B1 KR 101568043B1
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South Korea
Prior art keywords
wafer level
level package
polymer laminates
polymer
wafer
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KR1020090027087A
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English (en)
Korean (ko)
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KR20090104744A (ko
Inventor
크리스토퍼 제임스 카퍼스타
도널드 커닝엄
리차드 조셉 세아
케빈 두로처
조셉 이아노티
윌리엄 호킨스
Original Assignee
제너럴 일렉트릭 캄파니
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Publication of KR20090104744A publication Critical patent/KR20090104744A/ko
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Publication of KR101568043B1 publication Critical patent/KR101568043B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020090027087A 2008-03-31 2009-03-30 웨이퍼 레벨 패키지 Active KR101568043B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/059,075 US7952187B2 (en) 2008-03-31 2008-03-31 System and method of forming a wafer scale package
US12/059,075 2008-03-31

Publications (2)

Publication Number Publication Date
KR20090104744A KR20090104744A (ko) 2009-10-06
KR101568043B1 true KR101568043B1 (ko) 2015-11-10

Family

ID=40809871

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090027087A Active KR101568043B1 (ko) 2008-03-31 2009-03-30 웨이퍼 레벨 패키지

Country Status (5)

Country Link
US (1) US7952187B2 (enExample)
EP (1) EP2107599B1 (enExample)
JP (1) JP5588620B2 (enExample)
KR (1) KR101568043B1 (enExample)
TW (1) TWI492318B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114708B2 (en) * 2008-09-30 2012-02-14 General Electric Company System and method for pre-patterned embedded chip build-up
US10276486B2 (en) 2010-03-02 2019-04-30 General Electric Company Stress resistant micro-via structure for flexible circuits
TWI421957B (zh) * 2010-08-04 2014-01-01 環旭電子股份有限公司 系統封裝模組的製造方法及其封裝結構
US8829676B2 (en) * 2011-06-28 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for wafer level package
US8824161B2 (en) 2012-06-15 2014-09-02 Medtronic, Inc. Integrated circuit packaging for implantable medical devices
US9368460B2 (en) 2013-03-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out interconnect structure and method for forming same
US9484318B2 (en) * 2014-02-17 2016-11-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US20180320717A1 (en) * 2014-07-18 2018-11-08 The Regents Of The University Of California Device and method for gas maintenance in microfeatures on a submerged surface
US10432168B2 (en) 2015-08-31 2019-10-01 General Electric Company Systems and methods for quartz wafer bonding
US10333493B2 (en) 2016-08-25 2019-06-25 General Electric Company Embedded RF filter package structure and method of manufacturing thereof
KR102385549B1 (ko) 2017-08-16 2022-04-12 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
US20190206786A1 (en) * 2017-12-28 2019-07-04 Intel Corporation Thin film passive devices integrated in a package substrate

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5757072A (en) * 1994-12-19 1998-05-26 Martin Marietta Corporation Structure for protecting air bridges on semiconductor chips from damage
US20040063249A1 (en) * 2002-01-19 2004-04-01 Megic Corporation Thin film semiconductor package and method of fabrication
US20070267743A1 (en) * 2006-05-19 2007-11-22 Casio Computer Co., Ltd. Semiconductor device having low dielectric insulating film and manufacturing method of the same

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US5366906A (en) * 1992-10-16 1994-11-22 Martin Marietta Corporation Wafer level integration and testing
EP0734059B1 (en) * 1995-03-24 2005-11-09 Shinko Electric Industries Co., Ltd. Chip sized semiconductor device and a process for making it
US6773962B2 (en) * 2001-03-15 2004-08-10 General Electric Company Microelectromechanical system device packaging method
JP3951788B2 (ja) * 2002-04-25 2007-08-01 株式会社デンソー 表面実装型電子部品
JP3972246B2 (ja) * 2003-01-07 2007-09-05 ソニー株式会社 ウエハーレベル・チップサイズ・パッケージおよびその製造方法
JP4285079B2 (ja) * 2003-05-22 2009-06-24 カシオ計算機株式会社 半導体装置の製造方法
KR100609011B1 (ko) * 2003-12-05 2006-08-03 삼성전자주식회사 웨이퍼 레벨 모듈 및 그의 제조 방법
JP2005268297A (ja) * 2004-03-16 2005-09-29 Hitachi Media Electoronics Co Ltd 高周波デバイスおよびその製造方法
US7189594B2 (en) * 2004-09-10 2007-03-13 Agency For Science, Technology And Research Wafer level packages and methods of fabrication
JP3976043B2 (ja) * 2004-10-25 2007-09-12 セイコーエプソン株式会社 半導体装置及びその製造方法
JP4774248B2 (ja) * 2005-07-22 2011-09-14 Ｏｋｉセミコンダクタ株式会社 半導体装置
DE102006032431B4 (de) * 2006-06-22 2011-12-01 Siltronic Ag Verfahren und Vorrichtung zur Detektion von mechanischen Defekten in einem aus Halbleitermaterial bestehenden Stabstück
US7626269B2 (en) * 2006-07-06 2009-12-01 Micron Technology, Inc. Semiconductor constructions and assemblies, and electronic systems
JP4679553B2 (ja) * 2007-07-23 2011-04-27 イビデン株式会社 半導体チップ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757072A (en) * 1994-12-19 1998-05-26 Martin Marietta Corporation Structure for protecting air bridges on semiconductor chips from damage
US20040063249A1 (en) * 2002-01-19 2004-04-01 Megic Corporation Thin film semiconductor package and method of fabrication
US20070267743A1 (en) * 2006-05-19 2007-11-22 Casio Computer Co., Ltd. Semiconductor device having low dielectric insulating film and manufacturing method of the same

Also Published As

Publication number Publication date
KR20090104744A (ko) 2009-10-06
EP2107599B1 (en) 2019-07-03
JP2009246367A (ja) 2009-10-22
US20090243081A1 (en) 2009-10-01
US7952187B2 (en) 2011-05-31
TW201001577A (en) 2010-01-01
EP2107599A2 (en) 2009-10-07
EP2107599A3 (en) 2012-11-21
TWI492318B (zh) 2015-07-11
JP5588620B2 (ja) 2014-09-10

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