KR101567908B1 - 다이싱 장치, 다이싱 장치 유닛 및 다이싱 방법 - Google Patents

다이싱 장치, 다이싱 장치 유닛 및 다이싱 방법 Download PDF

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Publication number
KR101567908B1
KR101567908B1 KR1020100032255A KR20100032255A KR101567908B1 KR 101567908 B1 KR101567908 B1 KR 101567908B1 KR 1020100032255 A KR1020100032255 A KR 1020100032255A KR 20100032255 A KR20100032255 A KR 20100032255A KR 101567908 B1 KR101567908 B1 KR 101567908B1
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KR
South Korea
Prior art keywords
work
blade
dicing
spindle
cutting
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KR1020100032255A
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English (en)
Korean (ko)
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KR20100117510A (ko
Inventor
야스케 아라이
타카시 후지타
마사유키 아즈마
Original Assignee
가부시키가이샤 토쿄 세이미쯔
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Priority claimed from JP2010027799A external-priority patent/JP5495832B2/ja
Application filed by 가부시키가이샤 토쿄 세이미쯔 filed Critical 가부시키가이샤 토쿄 세이미쯔
Publication of KR20100117510A publication Critical patent/KR20100117510A/ko
Application granted granted Critical
Publication of KR101567908B1 publication Critical patent/KR101567908B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
KR1020100032255A 2009-04-24 2010-04-08 다이싱 장치, 다이싱 장치 유닛 및 다이싱 방법 KR101567908B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009107128 2009-04-24
JPJP-P-2009-107128 2009-04-24
JP2010027799A JP5495832B2 (ja) 2009-04-24 2010-02-10 ダイシング装置、ダイシング装置ユニット及びダイシング方法
JPJP-P-2010-027799 2010-02-10

Publications (2)

Publication Number Publication Date
KR20100117510A KR20100117510A (ko) 2010-11-03
KR101567908B1 true KR101567908B1 (ko) 2015-11-10

Family

ID=42995310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100032255A KR101567908B1 (ko) 2009-04-24 2010-04-08 다이싱 장치, 다이싱 장치 유닛 및 다이싱 방법

Country Status (2)

Country Link
KR (1) KR101567908B1 (zh)
CN (1) CN101870142B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802072B2 (ja) * 2011-07-26 2015-10-28 株式会社岡本工作機械製作所 円筒状インゴットブロックを四角柱状ブロックに加工する切断方法
JP6600267B2 (ja) * 2016-03-15 2019-10-30 株式会社ディスコ 被加工物の切削方法
JP6490158B2 (ja) * 2017-07-19 2019-03-27 ファナック株式会社 真直度確認方法
JP6938087B2 (ja) * 2017-09-21 2021-09-22 株式会社ディスコ 切削ブレードの装着機構
CN108400208B (zh) * 2018-03-22 2019-01-29 上海雅宸照明电器有限公司 一种半导体发光二极管制作设备
CN108461585B (zh) * 2018-03-22 2019-02-15 佛山市安林电子有限公司 一种半导体发光二极管制作设备
CN109333284B (zh) * 2018-10-23 2024-04-05 福建冠维汽车零部件有限公司 差速器十字轴轴颈自动磨床
CN110854011A (zh) * 2019-09-30 2020-02-28 芯盟科技有限公司 堆叠键合晶圆的处理方法
CN114571616A (zh) * 2022-02-18 2022-06-03 华虹半导体(无锡)有限公司 晶片去环装置和去环方法
CN114953230A (zh) * 2022-06-30 2022-08-30 青岛高测科技股份有限公司 一种多线切割机

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124155A (ja) 2001-10-12 2003-04-25 Disco Abrasive Syst Ltd 切削装置
JP2003163178A (ja) 2001-11-28 2003-06-06 Tokyo Seimitsu Co Ltd ダイシング装置
JP2008112884A (ja) 2006-10-31 2008-05-15 Disco Abrasive Syst Ltd ウエーハの加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083351A (en) * 1977-01-21 1978-04-11 Harold Jack Greenspan Fluted diamond drill
JP3485816B2 (ja) * 1998-12-09 2004-01-13 太陽誘電株式会社 ダイシング装置
WO2005037509A1 (ja) * 2003-10-16 2005-04-28 Neomax Co., Ltd. ワーク切断装置およびワーク切断方法
CN1807012A (zh) * 2005-01-19 2006-07-26 顺心企业股份有限公司 具工件交换台的加工机

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124155A (ja) 2001-10-12 2003-04-25 Disco Abrasive Syst Ltd 切削装置
JP2003163178A (ja) 2001-11-28 2003-06-06 Tokyo Seimitsu Co Ltd ダイシング装置
JP3765265B2 (ja) 2001-11-28 2006-04-12 株式会社東京精密 ダイシング装置
JP2008112884A (ja) 2006-10-31 2008-05-15 Disco Abrasive Syst Ltd ウエーハの加工方法

Also Published As

Publication number Publication date
CN101870142B (zh) 2015-04-01
KR20100117510A (ko) 2010-11-03
CN101870142A (zh) 2010-10-27

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