KR101558144B1 - 상호 관련 다중 패스 프로그래밍을 위한 비휘발성 메모리와 방법 - Google Patents

상호 관련 다중 패스 프로그래밍을 위한 비휘발성 메모리와 방법 Download PDF

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Publication number
KR101558144B1
KR101558144B1 KR1020107027838A KR20107027838A KR101558144B1 KR 101558144 B1 KR101558144 B1 KR 101558144B1 KR 1020107027838 A KR1020107027838 A KR 1020107027838A KR 20107027838 A KR20107027838 A KR 20107027838A KR 101558144 B1 KR101558144 B1 KR 101558144B1
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South Korea
Prior art keywords
programming
memory
pulse train
memory cell
pass
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KR1020107027838A
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English (en)
Korean (ko)
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KR20110036885A (ko
Inventor
라울-애드리안 세르네아
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샌디스크 테크놀로지스, 인코포레이티드
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Priority claimed from US12/138,387 external-priority patent/US7813172B2/en
Priority claimed from US12/138,382 external-priority patent/US7796435B2/en
Application filed by 샌디스크 테크놀로지스, 인코포레이티드 filed Critical 샌디스크 테크놀로지스, 인코포레이티드
Publication of KR20110036885A publication Critical patent/KR20110036885A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020107027838A 2008-06-12 2009-06-04 상호 관련 다중 패스 프로그래밍을 위한 비휘발성 메모리와 방법 Expired - Fee Related KR101558144B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/138,387 US7813172B2 (en) 2008-06-12 2008-06-12 Nonvolatile memory with correlated multiple pass programming
US12/138,382 US7796435B2 (en) 2008-06-12 2008-06-12 Method for correlated multiple pass programming in nonvolatile memory
US12/138,387 2008-06-12
US12/138,382 2008-06-12

Publications (2)

Publication Number Publication Date
KR20110036885A KR20110036885A (ko) 2011-04-12
KR101558144B1 true KR101558144B1 (ko) 2015-10-08

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KR1020107027838A Expired - Fee Related KR101558144B1 (ko) 2008-06-12 2009-06-04 상호 관련 다중 패스 프로그래밍을 위한 비휘발성 메모리와 방법

Country Status (6)

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EP (1) EP2297739B1 (enExample)
JP (1) JP5395167B2 (enExample)
KR (1) KR101558144B1 (enExample)
CN (1) CN102089827B (enExample)
TW (1) TWI394162B (enExample)
WO (1) WO2009152037A2 (enExample)

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* Cited by examiner, † Cited by third party
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JP5529858B2 (ja) * 2008-06-12 2014-06-25 サンディスク テクノロジィース インコーポレイテッド インデックスプログラミングおよび削減されたベリファイを有する不揮発性メモリおよび方法
JP6539608B2 (ja) * 2016-03-15 2019-07-03 東芝メモリ株式会社 半導体記憶装置
TWI600009B (zh) * 2016-11-04 2017-09-21 財團法人工業技術研究院 可變電阻記憶體電路以及可變電阻記憶體電路之寫入方法
CN110634527B (zh) * 2018-06-25 2021-06-22 西安格易安创集成电路有限公司 一种非易失存储器处理方法及装置
US10741568B2 (en) 2018-10-16 2020-08-11 Silicon Storage Technology, Inc. Precision tuning for the programming of analog neural memory in a deep learning artificial neural network
US12075618B2 (en) 2018-10-16 2024-08-27 Silicon Storage Technology, Inc. Input and digital output mechanisms for analog neural memory in a deep learning artificial neural network
CN111326200A (zh) * 2018-12-14 2020-06-23 北京兆易创新科技股份有限公司 非易失性存储器及其编程方法
CN113488093A (zh) * 2021-07-01 2021-10-08 中国科学院上海微系统与信息技术研究所 一种实现存储器多级存储的方法及装置

Citations (4)

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US6046935A (en) 1996-03-18 2000-04-04 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP2003109386A (ja) 2001-06-27 2003-04-11 Sandisk Corp 複数のデータ状態で動作する不揮発性メモリのストレージエレメント間の結合による影響を低減させるための動作技術
JP2004519804A (ja) 2001-02-26 2004-07-02 サンディスク　コーポレイション 改善されたプログラミングを備えた不揮発性メモリ及び該プログラミングのための方法
US20050219906A1 (en) 2004-01-27 2005-10-06 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory

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US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
DE60139670D1 (de) * 2001-04-10 2009-10-08 St Microelectronics Srl Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand
JP2002367381A (ja) * 2001-06-05 2002-12-20 Sony Corp 不揮発性半導体メモリ装置およびその書き込み方法
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US7177199B2 (en) * 2003-10-20 2007-02-13 Sandisk Corporation Behavior based programming of non-volatile memory
JP2005235287A (ja) * 2004-02-19 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置
TWI267864B (en) * 2004-05-06 2006-12-01 Samsung Electronics Co Ltd Method and device for programming control information
US7272037B2 (en) * 2004-10-29 2007-09-18 Macronix International Co., Ltd. Method for programming a multilevel phase change memory device
KR100748553B1 (ko) * 2004-12-20 2007-08-10 삼성전자주식회사 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치
US7130210B2 (en) * 2005-01-13 2006-10-31 Spansion Llc Multi-level ONO flash program algorithm for threshold width control
ITMI20050798A1 (it) * 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
US7362616B2 (en) * 2005-07-28 2008-04-22 Stmicroelectronics S.R.L. NAND flash memory with erase verify based on shorter evaluation time

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046935A (en) 1996-03-18 2000-04-04 Kabushiki Kaisha Toshiba Semiconductor device and memory system
JP2004519804A (ja) 2001-02-26 2004-07-02 サンディスク　コーポレイション 改善されたプログラミングを備えた不揮発性メモリ及び該プログラミングのための方法
JP2003109386A (ja) 2001-06-27 2003-04-11 Sandisk Corp 複数のデータ状態で動作する不揮発性メモリのストレージエレメント間の結合による影響を低減させるための動作技術
US20050219906A1 (en) 2004-01-27 2005-10-06 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory

Also Published As

Publication number Publication date
CN102089827B (zh) 2017-05-17
EP2297739B1 (en) 2015-03-04
JP2011524599A (ja) 2011-09-01
CN102089827A (zh) 2011-06-08
TW201011756A (en) 2010-03-16
KR20110036885A (ko) 2011-04-12
JP5395167B2 (ja) 2014-01-22
WO2009152037A2 (en) 2009-12-17
EP2297739A2 (en) 2011-03-23
WO2009152037A3 (en) 2010-03-18
TWI394162B (zh) 2013-04-21

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