CN102089827B - 非易失性存储器和关联多遍编程的方法 - Google Patents
非易失性存储器和关联多遍编程的方法 Download PDFInfo
- Publication number
- CN102089827B CN102089827B CN200980126873.4A CN200980126873A CN102089827B CN 102089827 B CN102089827 B CN 102089827B CN 200980126873 A CN200980126873 A CN 200980126873A CN 102089827 B CN102089827 B CN 102089827B
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- Prior art keywords
- programming
- memory cell
- memory
- pulse string
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/138,382 US7796435B2 (en) | 2008-06-12 | 2008-06-12 | Method for correlated multiple pass programming in nonvolatile memory |
US12/138,387 | 2008-06-12 | ||
US12/138,382 | 2008-06-12 | ||
US12/138,387 US7813172B2 (en) | 2008-06-12 | 2008-06-12 | Nonvolatile memory with correlated multiple pass programming |
PCT/US2009/046318 WO2009152037A2 (en) | 2008-06-12 | 2009-06-04 | Nonvolatile memory and method for correlated multiple pass programming |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102089827A CN102089827A (zh) | 2011-06-08 |
CN102089827B true CN102089827B (zh) | 2017-05-17 |
Family
ID=41268168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980126873.4A Active CN102089827B (zh) | 2008-06-12 | 2009-06-04 | 非易失性存储器和关联多遍编程的方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2297739B1 (zh) |
JP (1) | JP5395167B2 (zh) |
KR (1) | KR101558144B1 (zh) |
CN (1) | CN102089827B (zh) |
TW (1) | TWI394162B (zh) |
WO (1) | WO2009152037A2 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102067233B (zh) * | 2008-06-12 | 2014-03-12 | 桑迪士克科技股份有限公司 | 使用索引编程和减少的验证的非易失性存储器和方法 |
JP6539608B2 (ja) * | 2016-03-15 | 2019-07-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
TWI600009B (zh) * | 2016-11-04 | 2017-09-21 | 財團法人工業技術研究院 | 可變電阻記憶體電路以及可變電阻記憶體電路之寫入方法 |
CN110634527B (zh) * | 2018-06-25 | 2021-06-22 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理方法及装置 |
US12075618B2 (en) | 2018-10-16 | 2024-08-27 | Silicon Storage Technology, Inc. | Input and digital output mechanisms for analog neural memory in a deep learning artificial neural network |
US10741568B2 (en) * | 2018-10-16 | 2020-08-11 | Silicon Storage Technology, Inc. | Precision tuning for the programming of analog neural memory in a deep learning artificial neural network |
CN111326200A (zh) * | 2018-12-14 | 2020-06-23 | 北京兆易创新科技股份有限公司 | 非易失性存储器及其编程方法 |
CN113488093A (zh) * | 2021-07-01 | 2021-10-08 | 中国科学院上海微系统与信息技术研究所 | 一种实现存储器多级存储的方法及装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046935A (en) * | 1996-03-18 | 2000-04-04 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
CN1414566A (zh) * | 2001-06-27 | 2003-04-30 | 三因迪斯克公司 | 降低非易失性存储器存储元件间耦合效应的方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729489A (en) * | 1995-12-14 | 1998-03-17 | Intel Corporation | Programming flash memory using predictive learning methods |
JP3930074B2 (ja) * | 1996-09-30 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体集積回路及びデータ処理システム |
US6738289B2 (en) * | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
DE60139670D1 (de) * | 2001-04-10 | 2009-10-08 | St Microelectronics Srl | Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand |
JP2002367381A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 不揮発性半導体メモリ装置およびその書き込み方法 |
US6987693B2 (en) * | 2002-09-24 | 2006-01-17 | Sandisk Corporation | Non-volatile memory and method with reduced neighboring field errors |
US7136304B2 (en) * | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US6882567B1 (en) * | 2002-12-06 | 2005-04-19 | Multi Level Memory Technology | Parallel programming of multiple-bit-per-cell memory cells on a continuous word line |
US7177199B2 (en) * | 2003-10-20 | 2007-02-13 | Sandisk Corporation | Behavior based programming of non-volatile memory |
US7151692B2 (en) * | 2004-01-27 | 2006-12-19 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
JP2005235287A (ja) * | 2004-02-19 | 2005-09-02 | Nec Electronics Corp | 不揮発性半導体記憶装置のプログラミング方法、プログラミング装置、及び、不揮発性半導体記憶装置 |
TWI267864B (en) * | 2004-05-06 | 2006-12-01 | Samsung Electronics Co Ltd | Method and device for programming control information |
US7272037B2 (en) * | 2004-10-29 | 2007-09-18 | Macronix International Co., Ltd. | Method for programming a multilevel phase change memory device |
KR100748553B1 (ko) * | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치 |
US7130210B2 (en) * | 2005-01-13 | 2006-10-31 | Spansion Llc | Multi-level ONO flash program algorithm for threshold width control |
ITMI20050798A1 (it) * | 2005-05-03 | 2006-11-04 | Atmel Corp | Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili |
US7366014B2 (en) * | 2005-07-28 | 2008-04-29 | Stmicroelectronics S.R.L. | Double page programming system and method |
-
2009
- 2009-06-04 WO PCT/US2009/046318 patent/WO2009152037A2/en active Application Filing
- 2009-06-04 KR KR1020107027838A patent/KR101558144B1/ko not_active IP Right Cessation
- 2009-06-04 CN CN200980126873.4A patent/CN102089827B/zh active Active
- 2009-06-04 EP EP09763328.3A patent/EP2297739B1/en active Active
- 2009-06-04 JP JP2011513587A patent/JP5395167B2/ja active Active
- 2009-06-12 TW TW98119816A patent/TWI394162B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046935A (en) * | 1996-03-18 | 2000-04-04 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
CN1414566A (zh) * | 2001-06-27 | 2003-04-30 | 三因迪斯克公司 | 降低非易失性存储器存储元件间耦合效应的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2297739B1 (en) | 2015-03-04 |
KR20110036885A (ko) | 2011-04-12 |
JP2011524599A (ja) | 2011-09-01 |
WO2009152037A2 (en) | 2009-12-17 |
TWI394162B (zh) | 2013-04-21 |
KR101558144B1 (ko) | 2015-10-08 |
CN102089827A (zh) | 2011-06-08 |
WO2009152037A3 (en) | 2010-03-18 |
TW201011756A (en) | 2010-03-16 |
EP2297739A2 (en) | 2011-03-23 |
JP5395167B2 (ja) | 2014-01-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120625 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120625 Address after: The United States of America Texas Applicant after: Sandisk Corp. Address before: American California Applicant before: Sandisk Corp. |
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CB02 | Change of applicant information |
Address after: texas Applicant after: DELPHI INT OPERATIONS LUX SRL Address before: texas Applicant before: Sandisk Corp. |
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COR | Change of bibliographic data | ||
GR01 | Patent grant | ||
GR01 | Patent grant |