ITMI20050798A1 - Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili - Google Patents

Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili

Info

Publication number
ITMI20050798A1
ITMI20050798A1 IT000798A ITMI20050798A ITMI20050798A1 IT MI20050798 A1 ITMI20050798 A1 IT MI20050798A1 IT 000798 A IT000798 A IT 000798A IT MI20050798 A ITMI20050798 A IT MI20050798A IT MI20050798 A1 ITMI20050798 A1 IT MI20050798A1
Authority
IT
Italy
Prior art keywords
programming
generation
electronic devices
volatile electronic
impulses during
Prior art date
Application number
IT000798A
Other languages
English (en)
Inventor
Mauro Chinosi
Mirella Marsella
Monica Marziani
Stefano Surico
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to IT000798A priority Critical patent/ITMI20050798A1/it
Priority to US11/230,358 priority patent/US7570519B2/en
Priority to PCT/US2006/016902 priority patent/WO2006119327A2/en
Priority to TW095115687A priority patent/TW200719346A/zh
Publication of ITMI20050798A1 publication Critical patent/ITMI20050798A1/it
Priority to US12/535,455 priority patent/US8120963B2/en
Priority to US13/346,979 priority patent/US8553460B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
IT000798A 2005-05-03 2005-05-03 Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili ITMI20050798A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT000798A ITMI20050798A1 (it) 2005-05-03 2005-05-03 Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
US11/230,358 US7570519B2 (en) 2005-05-03 2005-09-19 Method and system for program pulse generation during programming of nonvolatile electronic devices
PCT/US2006/016902 WO2006119327A2 (en) 2005-05-03 2006-05-03 Method and system for program pulse generation during programming of nonvolatile electronic devices
TW095115687A TW200719346A (en) 2005-05-03 2006-05-03 Method and system for program pulse generation during programming of nonvolatile electronic devices
US12/535,455 US8120963B2 (en) 2005-05-03 2009-08-04 Method and system for program pulse generation during programming of nonvolatile electronic devices
US13/346,979 US8553460B2 (en) 2005-05-03 2012-01-10 Method and system for program pulse generation during programming of nonvolatile electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000798A ITMI20050798A1 (it) 2005-05-03 2005-05-03 Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili

Publications (1)

Publication Number Publication Date
ITMI20050798A1 true ITMI20050798A1 (it) 2006-11-04

Family

ID=37393882

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000798A ITMI20050798A1 (it) 2005-05-03 2005-05-03 Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili

Country Status (3)

Country Link
US (3) US7570519B2 (it)
IT (1) ITMI20050798A1 (it)
TW (1) TW200719346A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20050798A1 (it) 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
US7495993B2 (en) * 2005-10-26 2009-02-24 Capso Vision, Inc. Onboard data storage and method
US7414891B2 (en) 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US7882405B2 (en) * 2007-02-16 2011-02-01 Atmel Corporation Embedded architecture with serial interface for testing flash memories
JP5395167B2 (ja) * 2008-06-12 2014-01-22 サンディスク テクノロジィース インコーポレイテッド 相関複数パスプログラミングのための不揮発性メモリおよび方法
US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
JP2012063884A (ja) * 2010-09-14 2012-03-29 Toshiba Corp 記憶装置、電子機器、および記憶装置の制御方法
US8659954B1 (en) * 2011-09-14 2014-02-25 Adesto Technologies Corporation CBRAM/ReRAM with improved program and erase algorithms
JP5745136B1 (ja) 2014-05-09 2015-07-08 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその書き込み方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US599120A (en) * 1898-02-15 Charles s
US5844842A (en) * 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
JP4007457B2 (ja) * 1996-06-20 2007-11-14 エスティマイクロエレクトロニクス・ソチエタ・ア・レスポンサビリタ・リミタータ 調整読み取り電圧によるマルチレベルメモリ回路
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
EP0913832B1 (en) * 1997-11-03 2003-07-23 STMicroelectronics S.r.l. Method for multilevel programming of a nonvolatile memory, and a multilevel nonvolatile memory
US5969986A (en) * 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6094368A (en) * 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
JP3954245B2 (ja) * 1999-07-22 2007-08-08 株式会社東芝 電圧発生回路
IT1320699B1 (it) * 2000-10-06 2003-12-10 St Microelectronics Srl Memoria non volatile multilivello a ingombro ridotto e a basso consumo.
JP2002133878A (ja) * 2000-10-23 2002-05-10 Hitachi Ltd 不揮発性記憶回路および半導体集積回路
US6724658B2 (en) 2001-01-15 2004-04-20 Stmicroelectronics S.R.L. Method and circuit for generating reference voltages for reading a multilevel memory cell
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
JP3908957B2 (ja) * 2002-01-24 2007-04-25 シャープ株式会社 不揮発性半導体メモリ装置
JP4140246B2 (ja) * 2002-03-01 2008-08-27 国産電機株式会社 多気筒内燃機関用回転情報検出装置
US6847550B2 (en) * 2002-10-25 2005-01-25 Nexflash Technologies, Inc. Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor
FR2874449B1 (fr) * 2004-08-17 2008-04-04 Atmel Corp Circuit de retard de programme auto-adaptatif pour memoires programmables
WO2006119327A2 (en) 2005-05-03 2006-11-09 Atmel Corporation Method and system for program pulse generation during programming of nonvolatile electronic devices
ITMI20050798A1 (it) 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili

Also Published As

Publication number Publication date
US8120963B2 (en) 2012-02-21
US7570519B2 (en) 2009-08-04
US20120106250A1 (en) 2012-05-03
TW200719346A (en) 2007-05-16
US20060250851A1 (en) 2006-11-09
US20090290424A1 (en) 2009-11-26
US8553460B2 (en) 2013-10-08

Similar Documents

Publication Publication Date Title
ITMI20050798A1 (it) Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
TWI316207B (en) Memory system and method of writing into nonvolatile semiconductor memory
BRPI0716472A2 (pt) Sistema de tratamento ultassônico e método de usar o sistema
DK1893649T3 (da) Fremgangsmåde til forstærkning af opioide analgetikas virkninger på smerte
TWI369760B (en) Non-volatile semiconductor memory device and method of making the same
BRPI0621136A2 (pt) seguro sistema em chip
DE602004015813D1 (de) Speichervorrichtung und verfahren zur löschung derselben
TWI371101B (en) Methods for erasing and programming memory devices and semiconductor device
DK3364298T3 (da) System og fremgangsmåde til hukommelseskredsløb
BRPI0816018A2 (pt) "sistema e método de modelação geoespacial"
GB2427720B (en) System and method of using a protected non-volatile memory
DE602007013327D1 (de) Halbleiterspeicher und -system
BRPI0621129A2 (pt) seguro sistema em chip
TWI319190B (en) Method and apparatus for programming nonvolatile memory
DE602007009007D1 (de) Halbleiterspeicher und -system
BRPI0816520A2 (pt) "sistema e método de modelação geoespacial"
DE112005003831A5 (de) Elektrisches Feldgerät und Verfahren zum Herstellen einer Datenverbindung zwischen einer Datenschnittstelle des elektrischen Feldgerätes und einem geräteinternen Datenspeicher
TWI341531B (en) Recovery method of nand flash memory device
EP1821214A4 (en) NON-VOLATILE STORAGE SYSTEM
ITTO20050883A1 (it) Sistema e metodo per la gestione ottimizzata di un impianto di riscaldamento
ITMI20041904A1 (it) "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile"
ITRM20060185A1 (it) Sistema elettronico flessibile impermeabile
ES1053533Y (es) Sistema encofrado escaleras
ITUD20020243A1 (it) Sistema integrato di diffusione sonora per
PT10038T (pt) Sistema de tratamento de residuos de municoes