KR101556430B1 - 간섭 결함 검출 및 분류 - Google Patents

간섭 결함 검출 및 분류 Download PDF

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Publication number
KR101556430B1
KR101556430B1 KR1020117000031A KR20117000031A KR101556430B1 KR 101556430 B1 KR101556430 B1 KR 101556430B1 KR 1020117000031 A KR1020117000031 A KR 1020117000031A KR 20117000031 A KR20117000031 A KR 20117000031A KR 101556430 B1 KR101556430 B1 KR 101556430B1
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South Korea
Prior art keywords
sample
phase
defect
signal
light
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KR1020117000031A
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English (en)
Korean (ko)
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KR20110031306A (ko
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환 제이. 정
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환 제이. 정
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Priority claimed from US12/190,144 external-priority patent/US7864334B2/en
Application filed by 환 제이. 정 filed Critical 환 제이. 정
Publication of KR20110031306A publication Critical patent/KR20110031306A/ko
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020117000031A 2008-06-03 2009-06-02 간섭 결함 검출 및 분류 KR101556430B1 (ko)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US13072908P 2008-06-03 2008-06-03
US61/130,729 2008-06-03
US13561608P 2008-07-22 2008-07-22
US61/135,616 2008-07-22
US12/190,144 US7864334B2 (en) 2008-06-03 2008-08-12 Interferometric defect detection
US12/190,144 2008-08-12
US18951008P 2008-08-20 2008-08-20
US18950908P 2008-08-20 2008-08-20
US18950808P 2008-08-20 2008-08-20
US61/189,509 2008-08-20
US61/189,508 2008-08-20
US61/189,510 2008-08-20
US21051309P 2009-03-19 2009-03-19
US61/210,513 2009-03-19

Publications (2)

Publication Number Publication Date
KR20110031306A KR20110031306A (ko) 2011-03-25
KR101556430B1 true KR101556430B1 (ko) 2015-10-01

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KR1020117000031A KR101556430B1 (ko) 2008-06-03 2009-06-02 간섭 결함 검출 및 분류

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EP (1) EP2286175A4 (fr)
JP (1) JP5444334B2 (fr)
KR (1) KR101556430B1 (fr)
CN (1) CN102089616B (fr)
WO (1) WO2009149103A1 (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421469B (zh) * 2010-03-10 2014-01-01 Ind Tech Res Inst 表面量測裝置及其之量測方法及校正方法
EP2384692B1 (fr) * 2010-05-07 2020-09-09 Rowiak GmbH Appareil et procédé destinés à l'interférométrie
CN103635857B (zh) * 2011-07-25 2017-12-15 西铁城时计株式会社 光学器件、投影机、制造方法
CN102435547B (zh) * 2011-09-15 2014-02-05 上海华力微电子有限公司 敏感光阻耐受程度检测方法及晶圆缺陷检验方法
CN103018202B (zh) * 2011-09-22 2014-10-01 中国科学院微电子研究所 一种集成电路缺陷的光学检测方法和装置
US9503606B2 (en) 2011-09-28 2016-11-22 Semiconductor Components Industries, Llc Time-delay-and-integrate image sensors having variable integration times
WO2013172103A1 (fr) * 2012-05-16 2013-11-21 株式会社 日立ハイテクノロジーズ Dispositif de contrôle
JP6025419B2 (ja) 2012-06-27 2016-11-16 株式会社ニューフレアテクノロジー 検査方法および検査装置
KR101354729B1 (ko) * 2012-08-23 2014-01-27 앰코 테크놀로지 코리아 주식회사 반도체 디바이스의 오정렬 값 측정 방법 및 이것이 적용된 반도체 디바이스
JP6001383B2 (ja) * 2012-08-28 2016-10-05 株式会社日立ハイテクノロジーズ 欠陥検査方法及びそれを用いた装置
JP5993691B2 (ja) * 2012-09-28 2016-09-14 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
JP5946751B2 (ja) * 2012-11-08 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥検出方法及びその装置並びに欠陥観察方法及びその装置
KR101336946B1 (ko) * 2012-11-27 2013-12-04 한국기초과학지원연구원 발열 분포 측정을 이용한 불량 분석 장치 및 방법
JP5786270B2 (ja) * 2013-03-06 2015-09-30 株式会社東京精密 2色干渉計測装置
CN104180765B (zh) * 2013-05-28 2017-03-15 甘志银 化学气相沉积设备中实时测量衬底翘曲的方法及装置
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
US9189705B2 (en) * 2013-08-08 2015-11-17 JSMSW Technology LLC Phase-controlled model-based overlay measurement systems and methods
JP6316068B2 (ja) 2014-03-31 2018-04-25 国立大学法人 東京大学 検査システムおよび検査方法
JP6433268B2 (ja) * 2014-03-31 2018-12-05 国立大学法人 東京大学 検査システムおよび検査方法
JP6469833B2 (ja) * 2014-07-14 2019-02-13 ザイゴ コーポレーションZygo Corporation スペクトルを用いた干渉計エンコーダ
JP5843179B1 (ja) * 2014-09-19 2016-01-13 レーザーテック株式会社 検査装置、及び波面収差補正方法
CN104297744B (zh) * 2014-10-16 2016-12-07 西安理工大学 偏振激光雷达的偏振标定与补偿装置及标定与补偿方法
WO2016084239A1 (fr) * 2014-11-28 2016-06-02 株式会社東京精密 Dispositif de mesure d'interférence à deux couleurs
CN107111118B (zh) * 2014-12-22 2019-12-10 加州理工学院 用于厚样本的epi照明傅立叶重叠关联成像
TWI574334B (zh) * 2015-03-17 2017-03-11 陳勇吉 檢測晶圓的方法
CN104729712B (zh) * 2015-03-30 2017-08-04 中国资源卫星应用中心 一种星载大气探测傅里叶变换光谱仪数据预处理方法
JP2017129500A (ja) * 2016-01-21 2017-07-27 株式会社ブイ・テクノロジー 位相シフト量測定装置
KR102483787B1 (ko) * 2016-02-25 2023-01-04 에스케이하이닉스 주식회사 반도체 장치의 결함 모델링 장치 및 방법, 이를 위한 컴퓨터 프로그램과, 이를 이용한 반도체 장치의 결함 검사 시스템
KR102179989B1 (ko) * 2016-04-13 2020-11-17 케이엘에이 코포레이션 전기적 설계 의도에 기초한 결함 분류 시스템 및 방법
IL245932A (en) * 2016-05-30 2017-10-31 Elbit Systems Land & C4I Ltd System and methods for determining the authenticity of an object that includes a reference image acquisition and a user unit
JP6705356B2 (ja) * 2016-10-12 2020-06-03 住友電気工業株式会社 光ファイバ特性評価方法および光ファイバ特性評価装置
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
WO2018219639A1 (fr) * 2017-06-02 2018-12-06 Asml Netherlands B.V. Appareil de mesure
CN107504919B (zh) * 2017-09-14 2019-08-16 深圳大学 基于相位映射的折叠相位三维数字成像方法及装置
US10522376B2 (en) * 2017-10-20 2019-12-31 Kla-Tencor Corporation Multi-step image alignment method for large offset die-die inspection
CN108280824B (zh) * 2018-01-18 2022-06-14 电子科技大学 基于图像配准及融合的激光剪切散斑干涉缺陷检测系统
CN108195849A (zh) * 2018-01-23 2018-06-22 南京理工大学 基于短相干动态泰曼干涉仪的位相缺陷检测系统及方法
NL2020623B1 (en) * 2018-01-24 2019-07-30 Illumina Inc Structured illumination microscopy with line scanning
NL2020622B1 (en) 2018-01-24 2019-07-30 Lllumina Cambridge Ltd Reduced dimensionality structured illumination microscopy with patterned arrays of nanowells
CN108550138A (zh) * 2018-03-14 2018-09-18 浙江大学山东工业技术研究院 基于频率域滤波增强的耐火砖表面划痕识别方法
WO2019239618A1 (fr) * 2018-06-11 2019-12-19 株式会社島津製作所 Procédé et dispositif de détection de défaut
CN108961234A (zh) * 2018-06-29 2018-12-07 中国科学院光电技术研究所 一种基于多波长迭代算法的透射性元件缺陷检测装置及方法
CN108802056B (zh) * 2018-08-23 2024-02-06 中国工程物理研究院激光聚变研究中心 光学元件位相型缺陷测量装置及检测方法
US10816464B2 (en) * 2019-01-23 2020-10-27 Applied Materials, Inc. Imaging reflectometer
US11294162B2 (en) * 2019-02-07 2022-04-05 Nanotronics Imaging, Inc. Fluorescence microscopy inspection systems, apparatus and methods with darkfield channel
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
US20220155223A1 (en) * 2019-03-28 2022-05-19 Kyoto Electronics Manufacturing Co., Ltd. Laser gas analysis device
CN109994398A (zh) * 2019-04-18 2019-07-09 上海华力微电子有限公司 一种晶圆缺陷扫描对比方法
KR102166495B1 (ko) * 2019-05-27 2020-10-15 김은근 델타봇 타입의 전동 현미경 스테이지
CN110553580B (zh) * 2019-06-04 2022-05-20 南京英特飞光电技术有限公司 一种倾斜入射相移干涉仪和直角棱镜大面测量方法
CN111208089B (zh) * 2020-01-13 2020-09-15 中国科学院上海光学精密机械研究所 长距离端面粗糙晶体体内缺陷测量装置和方法
IL295619A (en) * 2020-02-24 2022-10-01 Nova Ltd Metrological optics system and method
US11544838B2 (en) * 2020-03-21 2023-01-03 Kla Corporation Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging
KR102265540B1 (ko) * 2020-04-27 2021-06-17 주식회사 에프에스티 초점 보정 장치, 초점 보정 방법 및 결함 검출 시스템
US20230298158A1 (en) * 2020-08-19 2023-09-21 Asml Netherlands B.V. Apparatus and method for selecting high quality images from raw images automatically
CN112098421B (zh) * 2020-09-15 2022-06-28 上海微电子装备(集团)股份有限公司 暗场检测装置
CN113390467B (zh) * 2021-07-14 2022-05-03 安徽至博光电科技股份有限公司 测振测温装置及其信号处理方法
CN113465722B (zh) * 2021-07-14 2022-06-07 安徽至博光电科技股份有限公司 一种低成本测振系统及振动测量方法
CN113642422B (zh) * 2021-07-27 2024-05-24 东北电力大学 一种连续中文手语识别方法
CN113533351B (zh) * 2021-08-20 2023-12-22 合肥御微半导体技术有限公司 一种面板缺陷检测装置及检测方法
CN114820617B (zh) * 2022-06-29 2022-09-20 苏州大学 基于四焦距相位相干机器视觉的晶体缺陷检测方法和系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7428057B2 (en) 2005-01-20 2008-09-23 Zygo Corporation Interferometer for determining characteristics of an object surface, including processing and calibration
US7864334B2 (en) 2008-06-03 2011-01-04 Jzw Llc Interferometric defect detection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501551B1 (en) * 1991-04-29 2002-12-31 Massachusetts Institute Of Technology Fiber optic imaging endoscope interferometer with at least one faraday rotator
JP2005003689A (ja) * 1994-10-07 2005-01-06 Renesas Technology Corp 被検査対象物上のパターンの欠陥検査方法及びその装置
US6288780B1 (en) * 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
JPH09281051A (ja) * 1996-04-17 1997-10-31 Nikon Corp 検査装置
US6259055B1 (en) * 1998-10-26 2001-07-10 Lsp Technologies, Inc. Apodizers for laser peening systems
JP3881125B2 (ja) * 1999-02-17 2007-02-14 レーザーテック株式会社 段差測定装置並びにこの段差測定装置を用いたエッチングモニタ装置及びエッチング方法
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
JPWO2002056332A1 (ja) * 2001-01-10 2004-05-20 株式会社荏原製作所 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法
US7209239B2 (en) * 2002-10-02 2007-04-24 Kla-Tencor Technologies Corporation System and method for coherent optical inspection
JP4220287B2 (ja) * 2003-03-31 2009-02-04 株式会社東芝 パターン欠陥検査装置
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US7295303B1 (en) * 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
US7357513B2 (en) * 2004-07-30 2008-04-15 Novalux, Inc. System and method for driving semiconductor laser sources for displays

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7428057B2 (en) 2005-01-20 2008-09-23 Zygo Corporation Interferometer for determining characteristics of an object surface, including processing and calibration
US7446882B2 (en) 2005-01-20 2008-11-04 Zygo Corporation Interferometer for determining characteristics of an object surface
US7616323B2 (en) 2005-01-20 2009-11-10 Zygo Corporation Interferometer with multiple modes of operation for determining characteristics of an object surface
US7864334B2 (en) 2008-06-03 2011-01-04 Jzw Llc Interferometric defect detection

Also Published As

Publication number Publication date
JP5444334B2 (ja) 2014-03-19
CN102089616B (zh) 2013-03-13
JP2011523711A (ja) 2011-08-18
EP2286175A4 (fr) 2017-04-12
KR20110031306A (ko) 2011-03-25
CN102089616A (zh) 2011-06-08
EP2286175A1 (fr) 2011-02-23
WO2009149103A1 (fr) 2009-12-10

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