KR101552501B1 - 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 - Google Patents

재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 Download PDF

Info

Publication number
KR101552501B1
KR101552501B1 KR1020107025442A KR20107025442A KR101552501B1 KR 101552501 B1 KR101552501 B1 KR 101552501B1 KR 1020107025442 A KR1020107025442 A KR 1020107025442A KR 20107025442 A KR20107025442 A KR 20107025442A KR 101552501 B1 KR101552501 B1 KR 101552501B1
Authority
KR
South Korea
Prior art keywords
electrode
disposed
carrier body
coating
contact area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107025442A
Other languages
English (en)
Korean (ko)
Other versions
KR20110009146A (ko
Inventor
데이비드 힐라브랜드
데오도르 냅
Original Assignee
헴로크세미컨덕터코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헴로크세미컨덕터코포레이션 filed Critical 헴로크세미컨덕터코포레이션
Publication of KR20110009146A publication Critical patent/KR20110009146A/ko
Application granted granted Critical
Publication of KR101552501B1 publication Critical patent/KR101552501B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/005—Electrical coupling combined with fluidic coupling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Resistance Heating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Control Of Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Contacts (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020107025442A 2008-04-14 2009-04-13 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극 Expired - Fee Related KR101552501B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4468708P 2008-04-14 2008-04-14
US61/044,687 2008-04-14

Publications (2)

Publication Number Publication Date
KR20110009146A KR20110009146A (ko) 2011-01-27
KR101552501B1 true KR101552501B1 (ko) 2015-09-14

Family

ID=40791646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025442A Expired - Fee Related KR101552501B1 (ko) 2008-04-14 2009-04-13 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극

Country Status (10)

Country Link
US (2) US8951352B2 (enExample)
EP (1) EP2266369B1 (enExample)
JP (2) JP5959198B2 (enExample)
KR (1) KR101552501B1 (enExample)
CN (1) CN102047751B (enExample)
AU (1) AU2009236679B2 (enExample)
CA (1) CA2721095A1 (enExample)
RU (1) RU2494579C2 (enExample)
TW (1) TWI505743B (enExample)
WO (1) WO2009128888A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101639577B1 (ko) 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP5699060B2 (ja) * 2011-09-20 2015-04-08 信越化学工業株式会社 多結晶シリコンの製造方法
CN114520429A (zh) 2015-04-14 2022-05-20 安费诺有限公司 电连接器
JP6819203B2 (ja) * 2016-04-12 2021-01-27 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003040612A (ja) * 2001-07-30 2003-02-13 Komatsu Ltd 高純度多結晶シリコンの製造方法
JP2005272965A (ja) * 2004-03-25 2005-10-06 Sumitomo Heavy Ind Ltd 電極部材、及びこれを備えた成膜装置

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054141A (enExample) 1900-01-01
US1738828A (en) * 1925-03-02 1929-12-10 Jackson Arthur Hews Low-resistance permanent wire
US3330251A (en) 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
US3011877A (en) 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
NL124690C (enExample) 1958-05-29
DE1150366B (de) 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium
NL251143A (enExample) 1959-05-04
DE1155759B (de) 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
DE1264400B (de) 1961-01-26 1968-03-28 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials aus der Gasphase
DE1138481C2 (de) 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE2324365C3 (de) 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
DE2541215C3 (de) 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
DE2652218A1 (de) 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS53108029A (en) 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4173944A (en) 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
DE2912661C2 (de) 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4304641A (en) 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
US4477911A (en) 1982-12-02 1984-10-16 Westinghouse Electric Corp. Integral heat pipe-electrode
US4481232A (en) 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US4822641A (en) 1985-04-30 1989-04-18 Inovan Gmbh & Co. Kg Method of manufacturing a contact construction material structure
SE452862B (sv) 1985-06-05 1987-12-21 Aga Ab Ljusbagselektrod
US4707225A (en) 1986-01-06 1987-11-17 Rockwell International Corporation Fluid-cooled channel construction
US4805556A (en) 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5096550A (en) 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
RU2020777C1 (ru) * 1991-07-03 1994-09-30 Нижегородский научно-исследовательский приборостроительный институт "Кварц" Способ металлизации подложки из фторопласта
US5139890A (en) * 1991-09-30 1992-08-18 Olin Corporation Silver-coated electrical components
US5906799A (en) 1992-06-01 1999-05-25 Hemlock Semiconductor Corporation Chlorosilane and hydrogen reactor
US5227041A (en) 1992-06-12 1993-07-13 Digital Equipment Corporation Dry contact electroplating apparatus
DE4243570C1 (de) 1992-12-22 1994-01-27 Heraeus Gmbh W C Elektrischer Kontaktkörper
RU2052538C1 (ru) * 1993-04-08 1996-01-20 Сергей Николаевич Кучанов Способ нанесения вакуумного металлизированного покрытия на диэлектрические подложки
US5422088A (en) 1994-01-28 1995-06-06 Hemlock Semiconductor Corporation Process for hydrogenation of tetrachlorosilane
JP3377849B2 (ja) 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用メッキ装置
DE4424929C2 (de) 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
FR2741227A1 (fr) 1995-11-14 1997-05-16 Verrerie & Cristallerie Electrode, notamment destinee a etre utilisee dans des fours de fusion du verre
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
NL1005963C2 (nl) 1997-05-02 1998-11-09 Asm Int Verticale oven voor het behandelen van halfgeleidersubstraten.
RU2135629C1 (ru) 1997-11-12 1999-08-27 Государственное предприятие ВНИИавтогенмаш Способ повышения долговечности электродных и сопловых устройств и технологический плазматрон для его осуществления
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
DE19882883B4 (de) * 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6284312B1 (en) 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
JP4372918B2 (ja) 1999-06-30 2009-11-25 パナソニック電工株式会社 プラズマ処理装置及びプラズマ処理方法
JP2001156042A (ja) 1999-11-29 2001-06-08 Hitachi Ltd プラズマ処理装置
DE10005821A1 (de) * 2000-02-10 2001-08-23 Schott Glas Gekühlte Edelmetallelektrode zum Einstellen einer bestimmten Elektrodenoberfläche
DE10041564C2 (de) 2000-08-24 2002-06-27 Heraeus Noblelight Gmbh Kühlbares Infrarotstrahlerelement
DE10101040A1 (de) 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
JP2002231357A (ja) * 2001-02-06 2002-08-16 Nagano Fujitsu Component Kk 電気接点およびコネクタ
JP4402860B2 (ja) 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
JP2002313533A (ja) * 2001-04-17 2002-10-25 Toshiba Ceramics Co Ltd 面状セラミックスヒーター
JP3870824B2 (ja) * 2001-09-11 2007-01-24 住友電気工業株式会社 被処理物保持体、半導体製造装置用サセプタおよび処理装置
GB0213402D0 (en) * 2002-06-12 2002-07-24 Johnson Matthey Plc Improvements in coated equipment
JP2004205059A (ja) 2002-12-20 2004-07-22 Toyo Radiator Co Ltd 高耐蝕性熱交換器の製造方法
JP4031782B2 (ja) 2004-07-01 2008-01-09 株式会社大阪チタニウムテクノロジーズ 多結晶シリコン製造方法およびシード保持電極
JP2007281161A (ja) 2006-04-06 2007-10-25 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及び半導体製造装置
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
KR100768148B1 (ko) 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
US20110036292A1 (en) 2008-04-14 2011-02-17 Max Dehtiar Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein
KR101639577B1 (ko) 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003040612A (ja) * 2001-07-30 2003-02-13 Komatsu Ltd 高純度多結晶シリコンの製造方法
JP2005272965A (ja) * 2004-03-25 2005-10-06 Sumitomo Heavy Ind Ltd 電極部材、及びこれを備えた成膜装置

Also Published As

Publication number Publication date
RU2010146253A (ru) 2012-05-20
CN102047751A (zh) 2011-05-04
TWI505743B (zh) 2015-10-21
JP2015028217A (ja) 2015-02-12
CA2721095A1 (en) 2009-10-22
TW201004460A (en) 2010-01-16
AU2009236679A1 (en) 2009-10-22
JP5909533B2 (ja) 2016-04-26
AU2009236679B2 (en) 2014-02-27
JP5959198B2 (ja) 2016-08-02
JP2011523758A (ja) 2011-08-18
EP2266369A1 (en) 2010-12-29
US20110036294A1 (en) 2011-02-17
EP2266369B1 (en) 2017-11-22
RU2494579C2 (ru) 2013-09-27
WO2009128888A1 (en) 2009-10-22
KR20110009146A (ko) 2011-01-27
CN102047751B (zh) 2014-01-29
US20140353147A1 (en) 2014-12-04
US8951352B2 (en) 2015-02-10

Similar Documents

Publication Publication Date Title
KR101639577B1 (ko) 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
AU2009236677B2 (en) Manufacturing apparatus for depositing a material and an electrode for use therein
KR101552501B1 (ko) 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20180816

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210908

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210908