JP5959198B2 - 材料を蒸着するための製造装置及び当該装置において使用される電極 - Google Patents

材料を蒸着するための製造装置及び当該装置において使用される電極 Download PDF

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Publication number
JP5959198B2
JP5959198B2 JP2011505007A JP2011505007A JP5959198B2 JP 5959198 B2 JP5959198 B2 JP 5959198B2 JP 2011505007 A JP2011505007 A JP 2011505007A JP 2011505007 A JP2011505007 A JP 2011505007A JP 5959198 B2 JP5959198 B2 JP 5959198B2
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Japan
Prior art keywords
electrode
disposed
contact area
outer coating
head
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Expired - Fee Related
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JP2011505007A
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English (en)
Japanese (ja)
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JP2011523758A5 (enExample
JP2011523758A (ja
Inventor
ヒラブランド，デイヴィッド
ナップ，セオドアー
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Hemlock Semiconductor Operations LLC
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Hemlock Semiconductor Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/005—Electrical coupling combined with fluidic coupling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Resistance Heating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Control Of Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Contacts (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2011505007A 2008-04-14 2009-04-13 材料を蒸着するための製造装置及び当該装置において使用される電極 Expired - Fee Related JP5959198B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4468708P 2008-04-14 2008-04-14
US61/044,687 2008-04-14
PCT/US2009/002294 WO2009128888A1 (en) 2008-04-14 2009-04-13 Manufacturing apparatus for depositing a material and an electrode for use therein

Related Child Applications (1)

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JP2014191023A Division JP5909533B2 (ja) 2008-04-14 2014-09-19 材料を蒸着するための製造装置及び当該装置において使用される電極

Publications (3)

Publication Number Publication Date
JP2011523758A JP2011523758A (ja) 2011-08-18
JP2011523758A5 JP2011523758A5 (enExample) 2011-09-29
JP5959198B2 true JP5959198B2 (ja) 2016-08-02

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JP2011505007A Expired - Fee Related JP5959198B2 (ja) 2008-04-14 2009-04-13 材料を蒸着するための製造装置及び当該装置において使用される電極
JP2014191023A Active JP5909533B2 (ja) 2008-04-14 2014-09-19 材料を蒸着するための製造装置及び当該装置において使用される電極

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Country Status (10)

Country Link
US (2) US8951352B2 (enExample)
EP (1) EP2266369B1 (enExample)
JP (2) JP5959198B2 (enExample)
KR (1) KR101552501B1 (enExample)
CN (1) CN102047751B (enExample)
AU (1) AU2009236679B2 (enExample)
CA (1) CA2721095A1 (enExample)
RU (1) RU2494579C2 (enExample)
TW (1) TWI505743B (enExample)
WO (1) WO2009128888A1 (enExample)

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KR101639577B1 (ko) 2008-04-14 2016-07-14 헴로크세미컨덕터코포레이션 재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP5699060B2 (ja) * 2011-09-20 2015-04-08 信越化学工業株式会社 多結晶シリコンの製造方法
CN114520429A (zh) 2015-04-14 2022-05-20 安费诺有限公司 电连接器
JP6819203B2 (ja) * 2016-04-12 2021-01-27 三菱マテリアル株式会社 多結晶シリコン製造装置及び製造方法

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Also Published As

Publication number Publication date
RU2010146253A (ru) 2012-05-20
CN102047751A (zh) 2011-05-04
TWI505743B (zh) 2015-10-21
JP2015028217A (ja) 2015-02-12
CA2721095A1 (en) 2009-10-22
TW201004460A (en) 2010-01-16
KR101552501B1 (ko) 2015-09-14
AU2009236679A1 (en) 2009-10-22
JP5909533B2 (ja) 2016-04-26
AU2009236679B2 (en) 2014-02-27
JP2011523758A (ja) 2011-08-18
EP2266369A1 (en) 2010-12-29
US20110036294A1 (en) 2011-02-17
EP2266369B1 (en) 2017-11-22
RU2494579C2 (ru) 2013-09-27
WO2009128888A1 (en) 2009-10-22
KR20110009146A (ko) 2011-01-27
CN102047751B (zh) 2014-01-29
US20140353147A1 (en) 2014-12-04
US8951352B2 (en) 2015-02-10

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