KR101549854B1 - 기판 지지 부싱 - Google Patents

기판 지지 부싱 Download PDF

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Publication number
KR101549854B1
KR101549854B1 KR1020147013407A KR20147013407A KR101549854B1 KR 101549854 B1 KR101549854 B1 KR 101549854B1 KR 1020147013407 A KR1020147013407 A KR 1020147013407A KR 20147013407 A KR20147013407 A KR 20147013407A KR 101549854 B1 KR101549854 B1 KR 101549854B1
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KR
South Korea
Prior art keywords
tubular body
ring
diameter
opening
bushing assembly
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KR1020147013407A
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English (en)
Korean (ko)
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KR20140076631A (ko
Inventor
타오 호우
정훈 오
탐 케이. 조
안드제즈 마틀로즈
프랭크 에프. 후시다란
야오-헝 양
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20140076631A publication Critical patent/KR20140076631A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C29/00—Bearings for parts moving only linearly
    • F16C29/02—Sliding-contact bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147013407A 2011-10-20 2012-10-01 기판 지지 부싱 Active KR101549854B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161549604P 2011-10-20 2011-10-20
US61/549,604 2011-10-20
PCT/US2012/058232 WO2013058970A1 (en) 2011-10-20 2012-10-01 Substrate support bushing

Publications (2)

Publication Number Publication Date
KR20140076631A KR20140076631A (ko) 2014-06-20
KR101549854B1 true KR101549854B1 (ko) 2015-09-03

Family

ID=48136043

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147013407A Active KR101549854B1 (ko) 2011-10-20 2012-10-01 기판 지지 부싱

Country Status (6)

Country Link
US (1) US8911151B2 (enExample)
JP (1) JP5896387B2 (enExample)
KR (1) KR101549854B1 (enExample)
CN (1) CN103828035B (enExample)
TW (1) TWI507617B (enExample)
WO (1) WO2013058970A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101810065B1 (ko) 2010-05-21 2017-12-18 어플라이드 머티어리얼스, 인코포레이티드 대면적 전극 상에 억지 끼워맞춤된 세라믹 절연체
US9991153B2 (en) * 2013-03-14 2018-06-05 Applied Materials, Inc. Substrate support bushing
US9887478B2 (en) * 2015-04-21 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Thermally insulating electrical contact probe
US9899193B1 (en) 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108242419A (zh) * 2016-12-26 2018-07-03 北京北方华创微电子装备有限公司 一种腔室及半导体设备
CN106894002A (zh) * 2017-03-31 2017-06-27 昆山国显光电有限公司 一种pecvd成膜装置及其成膜方法
KR20190015522A (ko) * 2017-05-25 2019-02-13 엔지케이 인슐레이터 엘티디 웨이퍼용 서셉터
US11406647B2 (en) 2017-11-06 2022-08-09 Cold Spring Harbor Laboratory Method and compositions for forming a copper-containing complex and uses thereof
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
CN108251821B (zh) * 2018-04-13 2020-04-10 昆山国显光电有限公司 一种应用于pecvd成膜的基座
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
CN113652673B (zh) * 2021-09-15 2023-11-24 福建华佳彩有限公司 一种化学气相沉积台板结构及其控制方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313865A (en) 1992-10-13 1994-05-24 Advanced Turret Engineering Co. Turret station restoration apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4003245C2 (de) * 1990-02-03 1997-08-21 Stabilus Gmbh Führung für teleskopartig ineinander verschiebbare zylindrische Teile
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
JP4111703B2 (ja) 2001-10-19 2008-07-02 アプライド マテリアルズ インコーポレイテッド ウエハリフト機構
DE10232478A1 (de) * 2002-07-17 2004-02-12 Infineon Technologies Ag Waferhubvorrichtung
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
KR101145579B1 (ko) * 2004-04-22 2012-05-17 티에치케이 가부시끼가이샤 복합 운동 장치
US20060016398A1 (en) * 2004-05-28 2006-01-26 Laurent Dubost Supporting and lifting device for substrates in vacuum
KR101218570B1 (ko) * 2005-05-24 2013-01-18 주성엔지니어링(주) 리프트핀 어셈블리
US7638003B2 (en) * 2006-01-12 2009-12-29 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
JP5022855B2 (ja) * 2007-10-05 2012-09-12 古河機械金属株式会社 リフトピン機構、加熱処理装置、減圧乾燥装置
KR101305139B1 (ko) * 2007-12-28 2013-09-05 주식회사 원익아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치
WO2010009050A2 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US20110014396A1 (en) * 2009-07-14 2011-01-20 Applied Materials, Inc. Recirculating linear rolling bushing
CN102947925A (zh) * 2010-04-07 2013-02-27 株式会社安川电机 θZ 驱动装置和载物台装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313865A (en) 1992-10-13 1994-05-24 Advanced Turret Engineering Co. Turret station restoration apparatus

Also Published As

Publication number Publication date
US20130101241A1 (en) 2013-04-25
US8911151B2 (en) 2014-12-16
JP5896387B2 (ja) 2016-03-30
WO2013058970A1 (en) 2013-04-25
CN103828035A (zh) 2014-05-28
KR20140076631A (ko) 2014-06-20
TWI507617B (zh) 2015-11-11
CN103828035B (zh) 2016-11-23
JP2015501537A (ja) 2015-01-15
TW201319419A (zh) 2013-05-16

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