CN103828035B - 基板支撑轴衬 - Google Patents

基板支撑轴衬 Download PDF

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Publication number
CN103828035B
CN103828035B CN201280046491.2A CN201280046491A CN103828035B CN 103828035 B CN103828035 B CN 103828035B CN 201280046491 A CN201280046491 A CN 201280046491A CN 103828035 B CN103828035 B CN 103828035B
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China
Prior art keywords
tubular body
ring
diameter
perimeter
inner perimeter
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CN201280046491.2A
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English (en)
Chinese (zh)
Other versions
CN103828035A (zh
Inventor
涛·侯
吴正勋
汤姆·K·崔
安德兹·马特洛萨
弗兰克·F·霍斯德里安
耀鸿·杨
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN103828035A publication Critical patent/CN103828035A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C29/00—Bearings for parts moving only linearly
    • F16C29/02—Sliding-contact bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201280046491.2A 2011-10-20 2012-10-01 基板支撑轴衬 Active CN103828035B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161549604P 2011-10-20 2011-10-20
US61/549,604 2011-10-20
PCT/US2012/058232 WO2013058970A1 (en) 2011-10-20 2012-10-01 Substrate support bushing

Publications (2)

Publication Number Publication Date
CN103828035A CN103828035A (zh) 2014-05-28
CN103828035B true CN103828035B (zh) 2016-11-23

Family

ID=48136043

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280046491.2A Active CN103828035B (zh) 2011-10-20 2012-10-01 基板支撑轴衬

Country Status (6)

Country Link
US (1) US8911151B2 (enExample)
JP (1) JP5896387B2 (enExample)
KR (1) KR101549854B1 (enExample)
CN (1) CN103828035B (enExample)
TW (1) TWI507617B (enExample)
WO (1) WO2013058970A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9068262B2 (en) * 2010-05-21 2015-06-30 Applied Materials, Inc. Tightly fitted ceramic insulator on large area electrode
US9991153B2 (en) * 2013-03-14 2018-06-05 Applied Materials, Inc. Substrate support bushing
US9887478B2 (en) * 2015-04-21 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Thermally insulating electrical contact probe
US9899193B1 (en) 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108242419A (zh) * 2016-12-26 2018-07-03 北京北方华创微电子装备有限公司 一种腔室及半导体设备
CN106894002A (zh) * 2017-03-31 2017-06-27 昆山国显光电有限公司 一种pecvd成膜装置及其成膜方法
TWI749231B (zh) * 2017-05-25 2021-12-11 日商日本碍子股份有限公司 晶圓基座
WO2019090331A1 (en) 2017-11-06 2019-05-09 Cold Spring Harbor Laboratory Method and compositions for forming a copper-containing complex and uses thereof
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
CN108251821B (zh) * 2018-04-13 2020-04-10 昆山国显光电有限公司 一种应用于pecvd成膜的基座
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
CN113652673B (zh) * 2021-09-15 2023-11-24 福建华佳彩有限公司 一种化学气相沉积台板结构及其控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200624587A (en) * 2004-05-28 2006-07-16 Unaxis Balzers Ag Supporting and lifting device for substrates in vacuum
US7180283B2 (en) * 2002-07-17 2007-02-20 Infineon Technologies, Ag Wafer lifting device
KR20090071751A (ko) * 2007-12-28 2009-07-02 주식회사 아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치

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Publication number Priority date Publication date Assignee Title
DE4003245C2 (de) * 1990-02-03 1997-08-21 Stabilus Gmbh Führung für teleskopartig ineinander verschiebbare zylindrische Teile
US5313865A (en) 1992-10-13 1994-05-24 Advanced Turret Engineering Co. Turret station restoration apparatus
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
JP4111703B2 (ja) 2001-10-19 2008-07-02 アプライド マテリアルズ インコーポレイテッド ウエハリフト機構
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
CN100427780C (zh) * 2004-04-22 2008-10-22 Thk株式会社 轴承衬套以及使用它的复合运动装置
KR101218570B1 (ko) * 2005-05-24 2013-01-18 주성엔지니어링(주) 리프트핀 어셈블리
US7638003B2 (en) * 2006-01-12 2009-12-29 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
JP5022855B2 (ja) * 2007-10-05 2012-09-12 古河機械金属株式会社 リフトピン機構、加熱処理装置、減圧乾燥装置
US20100013626A1 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US20110014396A1 (en) * 2009-07-14 2011-01-20 Applied Materials, Inc. Recirculating linear rolling bushing
KR20130040805A (ko) * 2010-04-07 2013-04-24 가부시키가이샤 야스카와덴키 θＺ 구동 장치 및 스테이지 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180283B2 (en) * 2002-07-17 2007-02-20 Infineon Technologies, Ag Wafer lifting device
TW200624587A (en) * 2004-05-28 2006-07-16 Unaxis Balzers Ag Supporting and lifting device for substrates in vacuum
KR20090071751A (ko) * 2007-12-28 2009-07-02 주식회사 아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치

Also Published As

Publication number Publication date
US20130101241A1 (en) 2013-04-25
JP5896387B2 (ja) 2016-03-30
JP2015501537A (ja) 2015-01-15
CN103828035A (zh) 2014-05-28
WO2013058970A1 (en) 2013-04-25
KR20140076631A (ko) 2014-06-20
KR101549854B1 (ko) 2015-09-03
US8911151B2 (en) 2014-12-16
TWI507617B (zh) 2015-11-11
TW201319419A (zh) 2013-05-16

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