CN103828035B - 基板支撑轴衬 - Google Patents

基板支撑轴衬 Download PDF

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Publication number
CN103828035B
CN103828035B CN201280046491.2A CN201280046491A CN103828035B CN 103828035 B CN103828035 B CN 103828035B CN 201280046491 A CN201280046491 A CN 201280046491A CN 103828035 B CN103828035 B CN 103828035B
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China
Prior art keywords
tubular body
ring
diameter
perimeter
inner perimeter
Prior art date
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CN201280046491.2A
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English (en)
Chinese (zh)
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CN103828035A (zh
Inventor
涛·侯
吴正勋
汤姆·K·崔
安德兹·马特洛萨
弗兰克·F·霍斯德里安
耀鸿·杨
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN103828035A publication Critical patent/CN103828035A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C29/00—Bearings for parts moving only linearly
    • F16C29/02—Sliding-contact bearings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CN201280046491.2A 2011-10-20 2012-10-01 基板支撑轴衬 Active CN103828035B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161549604P 2011-10-20 2011-10-20
US61/549,604 2011-10-20
PCT/US2012/058232 WO2013058970A1 (en) 2011-10-20 2012-10-01 Substrate support bushing

Publications (2)

Publication Number Publication Date
CN103828035A CN103828035A (zh) 2014-05-28
CN103828035B true CN103828035B (zh) 2016-11-23

Family

ID=48136043

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280046491.2A Active CN103828035B (zh) 2011-10-20 2012-10-01 基板支撑轴衬

Country Status (6)

Country Link
US (1) US8911151B2 (enExample)
JP (1) JP5896387B2 (enExample)
KR (1) KR101549854B1 (enExample)
CN (1) CN103828035B (enExample)
TW (1) TWI507617B (enExample)
WO (1) WO2013058970A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6104157B2 (ja) * 2010-05-21 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大面積電極にぴったりと嵌合されたセラミックス絶縁体
US9991153B2 (en) * 2013-03-14 2018-06-05 Applied Materials, Inc. Substrate support bushing
US9887478B2 (en) * 2015-04-21 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Thermally insulating electrical contact probe
US9899193B1 (en) 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108242419A (zh) * 2016-12-26 2018-07-03 北京北方华创微电子装备有限公司 一种腔室及半导体设备
CN106894002A (zh) * 2017-03-31 2017-06-27 昆山国显光电有限公司 一种pecvd成膜装置及其成膜方法
WO2018216797A1 (ja) * 2017-05-25 2018-11-29 日本碍子株式会社 ウエハ用サセプタ
WO2019090331A1 (en) 2017-11-06 2019-05-09 Cold Spring Harbor Laboratory Method and compositions for forming a copper-containing complex and uses thereof
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
CN108251821B (zh) * 2018-04-13 2020-04-10 昆山国显光电有限公司 一种应用于pecvd成膜的基座
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
CN113652673B (zh) * 2021-09-15 2023-11-24 福建华佳彩有限公司 一种化学气相沉积台板结构及其控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200624587A (en) * 2004-05-28 2006-07-16 Unaxis Balzers Ag Supporting and lifting device for substrates in vacuum
US7180283B2 (en) * 2002-07-17 2007-02-20 Infineon Technologies, Ag Wafer lifting device
KR20090071751A (ko) * 2007-12-28 2009-07-02 주식회사 아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4003245C2 (de) * 1990-02-03 1997-08-21 Stabilus Gmbh Führung für teleskopartig ineinander verschiebbare zylindrische Teile
US5313865A (en) 1992-10-13 1994-05-24 Advanced Turret Engineering Co. Turret station restoration apparatus
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
JP4111703B2 (ja) 2001-10-19 2008-07-02 アプライド マテリアルズ インコーポレイテッド ウエハリフト機構
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
JP4526430B2 (ja) * 2004-04-22 2010-08-18 Ｔｈｋ株式会社 軸受ブッシュ及びこれを用いた複合運動装置
KR101218570B1 (ko) * 2005-05-24 2013-01-18 주성엔지니어링(주) 리프트핀 어셈블리
US7638003B2 (en) * 2006-01-12 2009-12-29 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
JP5022855B2 (ja) * 2007-10-05 2012-09-12 古河機械金属株式会社 リフトピン機構、加熱処理装置、減圧乾燥装置
US20100013626A1 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US20110014396A1 (en) * 2009-07-14 2011-01-20 Applied Materials, Inc. Recirculating linear rolling bushing
JP5387760B2 (ja) * 2010-04-07 2014-01-15 株式会社安川電機 θＺ駆動装置およびステージ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180283B2 (en) * 2002-07-17 2007-02-20 Infineon Technologies, Ag Wafer lifting device
TW200624587A (en) * 2004-05-28 2006-07-16 Unaxis Balzers Ag Supporting and lifting device for substrates in vacuum
KR20090071751A (ko) * 2007-12-28 2009-07-02 주식회사 아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치

Also Published As

Publication number Publication date
WO2013058970A1 (en) 2013-04-25
JP2015501537A (ja) 2015-01-15
KR20140076631A (ko) 2014-06-20
US20130101241A1 (en) 2013-04-25
KR101549854B1 (ko) 2015-09-03
US8911151B2 (en) 2014-12-16
JP5896387B2 (ja) 2016-03-30
CN103828035A (zh) 2014-05-28
TWI507617B (zh) 2015-11-11
TW201319419A (zh) 2013-05-16

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