TWI507617B - 基板支承軸套 - Google Patents

基板支承軸套 Download PDF

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Publication number
TWI507617B
TWI507617B TW101136923A TW101136923A TWI507617B TW I507617 B TWI507617 B TW I507617B TW 101136923 A TW101136923 A TW 101136923A TW 101136923 A TW101136923 A TW 101136923A TW I507617 B TWI507617 B TW I507617B
Authority
TW
Taiwan
Prior art keywords
tubular body
ring
diameter
substrate
aperture
Prior art date
Application number
TW101136923A
Other languages
English (en)
Chinese (zh)
Other versions
TW201319419A (zh
Inventor
侯濤
吳正勳
邱湯姆Ｋ
馬特羅斯安德力卓
扈胥達蘭法蘭克Ｆ
楊燿宏
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201319419A publication Critical patent/TW201319419A/zh
Application granted granted Critical
Publication of TWI507617B publication Critical patent/TWI507617B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C29/00—Bearings for parts moving only linearly
    • F16C29/02—Sliding-contact bearings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW101136923A 2011-10-20 2012-10-05 基板支承軸套 TWI507617B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161549604P 2011-10-20 2011-10-20

Publications (2)

Publication Number Publication Date
TW201319419A TW201319419A (zh) 2013-05-16
TWI507617B true TWI507617B (zh) 2015-11-11

Family

ID=48136043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101136923A TWI507617B (zh) 2011-10-20 2012-10-05 基板支承軸套

Country Status (6)

Country Link
US (1) US8911151B2 (enExample)
JP (1) JP5896387B2 (enExample)
KR (1) KR101549854B1 (enExample)
CN (1) CN103828035B (enExample)
TW (1) TWI507617B (enExample)
WO (1) WO2013058970A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6104157B2 (ja) * 2010-05-21 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大面積電極にぴったりと嵌合されたセラミックス絶縁体
US9991153B2 (en) * 2013-03-14 2018-06-05 Applied Materials, Inc. Substrate support bushing
US9887478B2 (en) * 2015-04-21 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Thermally insulating electrical contact probe
US9899193B1 (en) 2016-11-02 2018-02-20 Varian Semiconductor Equipment Associates, Inc. RF ion source with dynamic volume control
CN108242419A (zh) * 2016-12-26 2018-07-03 北京北方华创微电子装备有限公司 一种腔室及半导体设备
CN106894002A (zh) * 2017-03-31 2017-06-27 昆山国显光电有限公司 一种pecvd成膜装置及其成膜方法
WO2018216797A1 (ja) * 2017-05-25 2018-11-29 日本碍子株式会社 ウエハ用サセプタ
WO2019090331A1 (en) 2017-11-06 2019-05-09 Cold Spring Harbor Laboratory Method and compositions for forming a copper-containing complex and uses thereof
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
CN108251821B (zh) * 2018-04-13 2020-04-10 昆山国显光电有限公司 一种应用于pecvd成膜的基座
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
CN113652673B (zh) * 2021-09-15 2023-11-24 福建华佳彩有限公司 一种化学气相沉积台板结构及其控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
WO2005117097A1 (en) * 2004-05-28 2005-12-08 Oc Oerlikon Balzers Ag Lift pin with roller glide for reducing friction
US20070160507A1 (en) * 2006-01-12 2007-07-12 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
US20100013626A1 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US20110014396A1 (en) * 2009-07-14 2011-01-20 Applied Materials, Inc. Recirculating linear rolling bushing

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4003245C2 (de) * 1990-02-03 1997-08-21 Stabilus Gmbh Führung für teleskopartig ineinander verschiebbare zylindrische Teile
US5313865A (en) 1992-10-13 1994-05-24 Advanced Turret Engineering Co. Turret station restoration apparatus
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
JP4111703B2 (ja) 2001-10-19 2008-07-02 アプライド マテリアルズ インコーポレイテッド ウエハリフト機構
DE10232478A1 (de) * 2002-07-17 2004-02-12 Infineon Technologies Ag Waferhubvorrichtung
JP4526430B2 (ja) * 2004-04-22 2010-08-18 Ｔｈｋ株式会社 軸受ブッシュ及びこれを用いた複合運動装置
KR101218570B1 (ko) * 2005-05-24 2013-01-18 주성엔지니어링(주) 리프트핀 어셈블리
JP5022855B2 (ja) * 2007-10-05 2012-09-12 古河機械金属株式会社 リフトピン機構、加熱処理装置、減圧乾燥装置
KR101305139B1 (ko) * 2007-12-28 2013-09-05 주식회사 원익아이피에스 리프트핀조립체 및 그를 가지는 진공처리장치
JP5387760B2 (ja) * 2010-04-07 2014-01-15 株式会社安川電機 θＺ駆動装置およびステージ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887317B2 (en) * 2002-09-10 2005-05-03 Applied Materials, Inc. Reduced friction lift pin
WO2005117097A1 (en) * 2004-05-28 2005-12-08 Oc Oerlikon Balzers Ag Lift pin with roller glide for reducing friction
US20070160507A1 (en) * 2006-01-12 2007-07-12 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
US20100013626A1 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US20110014396A1 (en) * 2009-07-14 2011-01-20 Applied Materials, Inc. Recirculating linear rolling bushing

Also Published As

Publication number Publication date
WO2013058970A1 (en) 2013-04-25
JP2015501537A (ja) 2015-01-15
KR20140076631A (ko) 2014-06-20
US20130101241A1 (en) 2013-04-25
KR101549854B1 (ko) 2015-09-03
US8911151B2 (en) 2014-12-16
JP5896387B2 (ja) 2016-03-30
CN103828035B (zh) 2016-11-23
CN103828035A (zh) 2014-05-28
TW201319419A (zh) 2013-05-16

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