TWI507617B - 基板支承軸套 - Google Patents
基板支承軸套 Download PDFInfo
- Publication number
- TWI507617B TWI507617B TW101136923A TW101136923A TWI507617B TW I507617 B TWI507617 B TW I507617B TW 101136923 A TW101136923 A TW 101136923A TW 101136923 A TW101136923 A TW 101136923A TW I507617 B TWI507617 B TW I507617B
- Authority
- TW
- Taiwan
- Prior art keywords
- tubular body
- ring
- diameter
- substrate
- aperture
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title description 95
- 230000007246 mechanism Effects 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C29/00—Bearings for parts moving only linearly
- F16C29/02—Sliding-contact bearings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161549604P | 2011-10-20 | 2011-10-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201319419A TW201319419A (zh) | 2013-05-16 |
| TWI507617B true TWI507617B (zh) | 2015-11-11 |
Family
ID=48136043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101136923A TWI507617B (zh) | 2011-10-20 | 2012-10-05 | 基板支承軸套 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8911151B2 (enExample) |
| JP (1) | JP5896387B2 (enExample) |
| KR (1) | KR101549854B1 (enExample) |
| CN (1) | CN103828035B (enExample) |
| TW (1) | TWI507617B (enExample) |
| WO (1) | WO2013058970A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9068262B2 (en) * | 2010-05-21 | 2015-06-30 | Applied Materials, Inc. | Tightly fitted ceramic insulator on large area electrode |
| US9991153B2 (en) * | 2013-03-14 | 2018-06-05 | Applied Materials, Inc. | Substrate support bushing |
| US9887478B2 (en) * | 2015-04-21 | 2018-02-06 | Varian Semiconductor Equipment Associates, Inc. | Thermally insulating electrical contact probe |
| US9899193B1 (en) | 2016-11-02 | 2018-02-20 | Varian Semiconductor Equipment Associates, Inc. | RF ion source with dynamic volume control |
| CN108242419A (zh) * | 2016-12-26 | 2018-07-03 | 北京北方华创微电子装备有限公司 | 一种腔室及半导体设备 |
| CN106894002A (zh) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | 一种pecvd成膜装置及其成膜方法 |
| TWI749231B (zh) * | 2017-05-25 | 2021-12-11 | 日商日本碍子股份有限公司 | 晶圓基座 |
| WO2019090331A1 (en) | 2017-11-06 | 2019-05-09 | Cold Spring Harbor Laboratory | Method and compositions for forming a copper-containing complex and uses thereof |
| US11121010B2 (en) | 2018-02-15 | 2021-09-14 | Tokyo Electron Limited | Plasma processing apparatus |
| CN108251821B (zh) * | 2018-04-13 | 2020-04-10 | 昆山国显光电有限公司 | 一种应用于pecvd成膜的基座 |
| US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
| JP7465733B2 (ja) * | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
| CN113652673B (zh) * | 2021-09-15 | 2023-11-24 | 福建华佳彩有限公司 | 一种化学气相沉积台板结构及其控制方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6887317B2 (en) * | 2002-09-10 | 2005-05-03 | Applied Materials, Inc. | Reduced friction lift pin |
| WO2005117097A1 (en) * | 2004-05-28 | 2005-12-08 | Oc Oerlikon Balzers Ag | Lift pin with roller glide for reducing friction |
| US20070160507A1 (en) * | 2006-01-12 | 2007-07-12 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
| US20100013626A1 (en) * | 2008-07-15 | 2010-01-21 | Applied Materials, Inc. | Substrate lift pin sensor |
| US20110014396A1 (en) * | 2009-07-14 | 2011-01-20 | Applied Materials, Inc. | Recirculating linear rolling bushing |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4003245C2 (de) * | 1990-02-03 | 1997-08-21 | Stabilus Gmbh | Führung für teleskopartig ineinander verschiebbare zylindrische Teile |
| US5313865A (en) | 1992-10-13 | 1994-05-24 | Advanced Turret Engineering Co. | Turret station restoration apparatus |
| US5848670A (en) * | 1996-12-04 | 1998-12-15 | Applied Materials, Inc. | Lift pin guidance apparatus |
| JP4111703B2 (ja) | 2001-10-19 | 2008-07-02 | アプライド マテリアルズ インコーポレイテッド | ウエハリフト機構 |
| DE10232478A1 (de) * | 2002-07-17 | 2004-02-12 | Infineon Technologies Ag | Waferhubvorrichtung |
| CN100427780C (zh) * | 2004-04-22 | 2008-10-22 | Thk株式会社 | 轴承衬套以及使用它的复合运动装置 |
| KR101218570B1 (ko) * | 2005-05-24 | 2013-01-18 | 주성엔지니어링(주) | 리프트핀 어셈블리 |
| JP5022855B2 (ja) * | 2007-10-05 | 2012-09-12 | 古河機械金属株式会社 | リフトピン機構、加熱処理装置、減圧乾燥装置 |
| KR101305139B1 (ko) * | 2007-12-28 | 2013-09-05 | 주식회사 원익아이피에스 | 리프트핀조립체 및 그를 가지는 진공처리장치 |
| KR20130040805A (ko) * | 2010-04-07 | 2013-04-24 | 가부시키가이샤 야스카와덴키 | θＺ 구동 장치 및 스테이지 장치 |
-
2012
- 2012-10-01 KR KR1020147013407A patent/KR101549854B1/ko active Active
- 2012-10-01 WO PCT/US2012/058232 patent/WO2013058970A1/en not_active Ceased
- 2012-10-01 CN CN201280046491.2A patent/CN103828035B/zh active Active
- 2012-10-01 JP JP2014537089A patent/JP5896387B2/ja active Active
- 2012-10-05 TW TW101136923A patent/TWI507617B/zh active
- 2012-10-09 US US13/648,082 patent/US8911151B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6887317B2 (en) * | 2002-09-10 | 2005-05-03 | Applied Materials, Inc. | Reduced friction lift pin |
| WO2005117097A1 (en) * | 2004-05-28 | 2005-12-08 | Oc Oerlikon Balzers Ag | Lift pin with roller glide for reducing friction |
| US20070160507A1 (en) * | 2006-01-12 | 2007-07-12 | Asm Japan K.K. | Semiconductor processing apparatus with lift pin structure |
| US20100013626A1 (en) * | 2008-07-15 | 2010-01-21 | Applied Materials, Inc. | Substrate lift pin sensor |
| US20110014396A1 (en) * | 2009-07-14 | 2011-01-20 | Applied Materials, Inc. | Recirculating linear rolling bushing |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130101241A1 (en) | 2013-04-25 |
| JP5896387B2 (ja) | 2016-03-30 |
| JP2015501537A (ja) | 2015-01-15 |
| CN103828035B (zh) | 2016-11-23 |
| CN103828035A (zh) | 2014-05-28 |
| WO2013058970A1 (en) | 2013-04-25 |
| KR20140076631A (ko) | 2014-06-20 |
| KR101549854B1 (ko) | 2015-09-03 |
| US8911151B2 (en) | 2014-12-16 |
| TW201319419A (zh) | 2013-05-16 |
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