KR101537300B1 - 미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들 - Google Patents

미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들 Download PDF

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KR101537300B1
KR101537300B1 KR1020107004848A KR20107004848A KR101537300B1 KR 101537300 B1 KR101537300 B1 KR 101537300B1 KR 1020107004848 A KR1020107004848 A KR 1020107004848A KR 20107004848 A KR20107004848 A KR 20107004848A KR 101537300 B1 KR101537300 B1 KR 101537300B1
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film
substrate
miscut
nitride
iii
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KR20100051846A (ko
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켄지 이소
히사시 야마다
마코토 사이토
아사코 히라이
스티븐 피. 덴바스
제임스 에스. 스펙
슈지 나카무라
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더 리전츠 오브 더 유니버시티 오브 캘리포니아
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10H20/80—Constructional details
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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    • H01S5/00—Semiconductor lasers
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020107004848A 2007-08-08 2008-08-08 미스컷 기판들 상에 성장된 평면의 무극성 ｍ-면 Ⅲ족-질화물 막들 Expired - Fee Related KR101537300B1 (ko)

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US95476707P 2007-08-08 2007-08-08
US95474407P 2007-08-08 2007-08-08
US60/954,744 2007-08-08
US60/954,767 2007-08-08

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KR101537300B1 true KR101537300B1 (ko) 2015-07-16

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WO (1) WO2009021201A1 (https=)

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WO2011109754A1 (en) * 2010-03-04 2011-09-09 The Regents Of The University Of California Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the c-direction
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KR102288547B1 (ko) * 2012-03-30 2021-08-10 미쯔비시 케미컬 주식회사 주기표 제 13 족 금속 질화물 결정 및 주기표 제 13 족 금속 질화물 결정의 제조 방법
JP5942547B2 (ja) * 2012-03-30 2016-06-29 三菱化学株式会社 Ｉｉｉ族窒化物結晶の製造方法
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法

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JP2014099658A (ja) 2014-05-29
EP2176878A1 (en) 2010-04-21
US20110237054A1 (en) 2011-09-29
WO2009021201A1 (en) 2009-02-12
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