KR101530747B1 - 노광 장치 및 디바이스 제조 방법 - Google Patents
노광 장치 및 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR101530747B1 KR101530747B1 KR1020110065509A KR20110065509A KR101530747B1 KR 101530747 B1 KR101530747 B1 KR 101530747B1 KR 1020110065509 A KR1020110065509 A KR 1020110065509A KR 20110065509 A KR20110065509 A KR 20110065509A KR 101530747 B1 KR101530747 B1 KR 101530747B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- imaging position
- optical system
- depth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/53—Automatic registration or positioning of originals with respect to each other or the photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010156185A JP5662717B2 (ja) | 2010-07-08 | 2010-07-08 | 露光装置及びデバイスの製造方法 |
| JPJP-P-2010-156185 | 2010-07-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120005382A KR20120005382A (ko) | 2012-01-16 |
| KR101530747B1 true KR101530747B1 (ko) | 2015-06-22 |
Family
ID=45438357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110065509A Expired - Fee Related KR101530747B1 (ko) | 2010-07-08 | 2011-07-01 | 노광 장치 및 디바이스 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8810774B2 (https=) |
| JP (1) | JP5662717B2 (https=) |
| KR (1) | KR101530747B1 (https=) |
| TW (2) | TWI447531B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5662717B2 (ja) * | 2010-07-08 | 2015-02-04 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| CN103969967B (zh) * | 2013-02-01 | 2016-08-24 | 上海微电子装备有限公司 | 用于硅片对准级间串绕测试和拟合的信号处理方法 |
| JP2018081224A (ja) * | 2016-11-17 | 2018-05-24 | キヤノン株式会社 | 撮像装置およびその制御方法 |
| US10748821B2 (en) | 2017-04-26 | 2020-08-18 | Samsung Electronics Co., Ltd. | Method and system for measuring pattern placement error on a wafer |
| JP7378265B2 (ja) * | 2019-10-18 | 2023-11-13 | キヤノン株式会社 | 露光装置、露光方法及び物品の製造方法 |
| JP7566590B2 (ja) * | 2020-11-05 | 2024-10-15 | キヤノン株式会社 | 露光装置、露光方法、及び物品の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10284404A (ja) * | 1997-04-07 | 1998-10-23 | Nikon Corp | 面位置調整装置及びその方法並びに露光装置及びその方法 |
| JPH11145054A (ja) * | 1988-04-25 | 1999-05-28 | Nikon Corp | 投影露光方法及び投影露光装置 |
| JP2002110511A (ja) * | 2000-09-27 | 2002-04-12 | Nikon Corp | 露光方法及び露光装置 |
| JP2008112991A (ja) * | 2006-10-12 | 2008-05-15 | Asml Netherlands Bv | フォーカステスト実施方法およびデバイス製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088204B2 (ja) * | 1988-04-25 | 1996-01-29 | 株式会社ニコン | 投影露光装置 |
| JPH03155112A (ja) * | 1989-11-13 | 1991-07-03 | Nikon Corp | 露光条件測定方法 |
| JP2803936B2 (ja) * | 1992-01-21 | 1998-09-24 | 三菱電機株式会社 | 投影露光装置及びパターン露光方法 |
| JP2766575B2 (ja) * | 1992-01-23 | 1998-06-18 | 三菱電機株式会社 | 投影レンズの評価装置及び評価方法 |
| JPH0817719A (ja) * | 1994-06-30 | 1996-01-19 | Nikon Corp | 投影露光装置 |
| JPH0922868A (ja) * | 1995-07-06 | 1997-01-21 | Canon Inc | 投影露光装置及びそれを用いた半導体デバイスの製造方法 |
| JP2003197510A (ja) * | 2001-12-27 | 2003-07-11 | Nikon Corp | 収差測定装置、収差測定方法、光学系、および、露光装置 |
| AU2003211559A1 (en) * | 2002-03-01 | 2003-09-16 | Nikon Corporation | Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method, exposure device, program, and device manufacturing method |
| JP2004047786A (ja) * | 2002-07-12 | 2004-02-12 | Nikon Corp | 照明光学装置,露光装置および露光方法 |
| JP2004319937A (ja) * | 2003-04-21 | 2004-11-11 | Nikon Corp | 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法 |
| TWI396225B (zh) * | 2004-07-23 | 2013-05-11 | 尼康股份有限公司 | 成像面測量方法、曝光方法、元件製造方法以及曝光裝置 |
| JP2006344648A (ja) * | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 露光方法 |
| WO2009018846A1 (en) * | 2007-08-09 | 2009-02-12 | Carl Zeiss Smt Ag | Method of structuring a photosensitive material |
| JP2009272387A (ja) | 2008-05-01 | 2009-11-19 | Canon Inc | 走査露光装置及びデバイス製造方法。 |
| JP2010182718A (ja) * | 2009-02-03 | 2010-08-19 | Toshiba Corp | 露光方法及び露光システム |
| JP2010251500A (ja) * | 2009-04-15 | 2010-11-04 | Toshiba Corp | 半導体デバイスの製造方法及び露光条件決定プログラム |
| JP5662717B2 (ja) | 2010-07-08 | 2015-02-04 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
-
2010
- 2010-07-08 JP JP2010156185A patent/JP5662717B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-01 KR KR1020110065509A patent/KR101530747B1/ko not_active Expired - Fee Related
- 2011-07-04 TW TW100123511A patent/TWI447531B/zh active
- 2011-07-04 TW TW103113663A patent/TWI526791B/zh not_active IP Right Cessation
- 2011-07-08 US US13/178,995 patent/US8810774B2/en active Active
-
2014
- 2014-04-09 US US14/248,468 patent/US9152059B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145054A (ja) * | 1988-04-25 | 1999-05-28 | Nikon Corp | 投影露光方法及び投影露光装置 |
| JPH10284404A (ja) * | 1997-04-07 | 1998-10-23 | Nikon Corp | 面位置調整装置及びその方法並びに露光装置及びその方法 |
| JP2002110511A (ja) * | 2000-09-27 | 2002-04-12 | Nikon Corp | 露光方法及び露光装置 |
| JP2008112991A (ja) * | 2006-10-12 | 2008-05-15 | Asml Netherlands Bv | フォーカステスト実施方法およびデバイス製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120005382A (ko) | 2012-01-16 |
| US20140218712A1 (en) | 2014-08-07 |
| US8810774B2 (en) | 2014-08-19 |
| JP5662717B2 (ja) | 2015-02-04 |
| US9152059B2 (en) | 2015-10-06 |
| TWI447531B (zh) | 2014-08-01 |
| TW201202870A (en) | 2012-01-16 |
| US20120008122A1 (en) | 2012-01-12 |
| JP2012019110A (ja) | 2012-01-26 |
| TW201430507A (zh) | 2014-08-01 |
| TWI526791B (zh) | 2016-03-21 |
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