KR101504508B1 - 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 - Google Patents

연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 Download PDF

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KR101504508B1
KR101504508B1 KR1020097019664A KR20097019664A KR101504508B1 KR 101504508 B1 KR101504508 B1 KR 101504508B1 KR 1020097019664 A KR1020097019664 A KR 1020097019664A KR 20097019664 A KR20097019664 A KR 20097019664A KR 101504508 B1 KR101504508 B1 KR 101504508B1
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spectrum
spectra
substrate
library
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KR20090112765A (ko
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해리 큐. 리
보그슬라우 에이. 스웨덱
도미닉 제이. 벤베그누
제프리 드뤼 데이비드
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
    • G16Z99/00—Subject matter not provided for in other main groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020097019664A 2007-02-23 2008-02-22 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 Active KR101504508B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89148707P 2007-02-23 2007-02-23
US60/891,487 2007-02-23
PCT/US2008/054807 WO2008103964A2 (en) 2007-02-23 2008-02-22 Using spectra to determine polishing endpoints

Related Child Applications (1)

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KR1020147032982A Division KR101678082B1 (ko) 2007-02-23 2008-02-22 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용

Publications (2)

Publication Number Publication Date
KR20090112765A KR20090112765A (ko) 2009-10-28
KR101504508B1 true KR101504508B1 (ko) 2015-03-20

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KR1020157033828A Active KR101643992B1 (ko) 2007-02-23 2008-02-22 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
KR1020147032982A Active KR101678082B1 (ko) 2007-02-23 2008-02-22 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용

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KR1020147032982A Active KR101678082B1 (ko) 2007-02-23 2008-02-22 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용

Country Status (6)

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US (2) US8569174B2 (enExample)
EP (1) EP2125291A4 (enExample)
JP (2) JP5654753B2 (enExample)
KR (3) KR101504508B1 (enExample)
TW (1) TWI445098B (enExample)
WO (1) WO2008103964A2 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
KR101504508B1 (ko) 2007-02-23 2015-03-20 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
KR101834944B1 (ko) * 2008-09-04 2018-03-06 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 동안 기판의 분광 모니터링의 이용에 의한 연마 속도들의 조정
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
JP5774482B2 (ja) * 2008-10-27 2015-09-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 処理中の基板の分光モニタリングにおける適合度
US8628376B2 (en) * 2008-11-07 2014-01-14 Applied Materials, Inc. In-line wafer thickness sensing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
JP5583137B2 (ja) * 2008-11-26 2014-09-03 アプライド マテリアルズ インコーポレイテッド フィードバックおよびフィードフォワードプロセス制御のために光計測学を使用すること
JP5968783B2 (ja) * 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
JP5728239B2 (ja) * 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
TWI496661B (zh) * 2010-04-28 2015-08-21 Applied Materials Inc 用於光學監測之參考光譜的自動產生
JP6039545B2 (ja) * 2010-05-05 2016-12-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 終点検出のためのスペクトル特徴部の動的または適応的な追跡
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8666665B2 (en) * 2010-06-07 2014-03-04 Applied Materials, Inc. Automatic initiation of reference spectra library generation for optical monitoring
JP2012019114A (ja) * 2010-07-08 2012-01-26 Tokyo Seimitsu Co Ltd 研磨終点検出装置、及び研磨終点検出方法
JP5612945B2 (ja) 2010-07-23 2014-10-22 株式会社荏原製作所 基板の研磨の進捗を監視する方法および研磨装置
US8954186B2 (en) * 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
TWI521625B (zh) * 2010-07-30 2016-02-11 應用材料股份有限公司 使用光譜監測來偵測層級清除
WO2012054263A2 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Multiple matching reference spectra for in-situ optical monitoring
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
US8755928B2 (en) * 2011-04-27 2014-06-17 Applied Materials, Inc. Automatic selection of reference spectra library
US8942842B2 (en) 2011-04-28 2015-01-27 Applied Materials, Inc. Varying optical coefficients to generate spectra for polishing control
KR101892914B1 (ko) 2012-03-08 2018-08-29 어플라이드 머티어리얼스, 인코포레이티드 측정된 스펙트럼에 대한 광학 모델의 피팅
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
US9227293B2 (en) * 2012-11-21 2016-01-05 Applied Materials, Inc. Multi-platen multi-head polishing architecture
US20140242881A1 (en) * 2013-02-27 2014-08-28 Applied Materials, Inc. Feed forward parameter values for use in theoretically generating spectra
TWI635929B (zh) * 2013-07-11 2018-09-21 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6195754B2 (ja) * 2013-07-19 2017-09-13 株式会社荏原製作所 研磨装置および研磨状態監視方法
US10502694B2 (en) * 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
US10399203B2 (en) * 2014-04-22 2019-09-03 Ebara Corporation Polishing method and polishing apparatus
US20160013085A1 (en) * 2014-07-10 2016-01-14 Applied Materials, Inc. In-Situ Acoustic Monitoring of Chemical Mechanical Polishing
US20160033958A1 (en) * 2014-08-01 2016-02-04 Globalfoundries Inc. Endpoint determination using individually measured target spectra
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
JP6902452B2 (ja) * 2017-10-19 2021-07-14 株式会社荏原製作所 研磨装置
TWI845444B (zh) 2018-04-03 2024-06-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP7086835B2 (ja) * 2018-12-28 2022-06-20 株式会社荏原製作所 研磨レシピ決定装置
CN110181984A (zh) * 2019-06-03 2019-08-30 泉州龙捷园林古建工程有限公司 一种于板材上制作图文的方法
US11282755B2 (en) * 2019-08-27 2022-03-22 Applied Materials, Inc. Asymmetry correction via oriented wafer loading
CN117900999A (zh) 2020-06-24 2024-04-19 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
WO2023249678A1 (en) * 2022-06-22 2023-12-28 Applied Materials, Inc. Window logic for control of polishing process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070042675A1 (en) * 2005-08-22 2007-02-22 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7004A (en) * 1850-01-08 Connecting ctjttees to shafts of boeing instetjments
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5747380A (en) 1996-02-26 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Robust end-point detection for contact and via etching
US6489624B1 (en) * 1997-07-18 2002-12-03 Nikon Corporation Apparatus and methods for detecting thickness of a patterned layer
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
TW398036B (en) 1998-08-18 2000-07-11 Promos Technologies Inc Method of monitoring of chemical mechanical polishing end point and uniformity
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
JP4484370B2 (ja) 1998-11-02 2010-06-16 アプライド マテリアルズ インコーポレイテッド 基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置
US6908374B2 (en) * 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
JP2000183001A (ja) 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd ウエハの研磨終点検出方法およびそれに用いる化学機械研磨装置
US6184985B1 (en) 1998-12-11 2001-02-06 Filmetrics, Inc. Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources
US6172756B1 (en) 1998-12-11 2001-01-09 Filmetrics, Inc. Rapid and accurate end point detection in a noisy environment
US6204922B1 (en) 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6190234B1 (en) 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
JP2000310512A (ja) 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
JP3327289B2 (ja) 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
US6358327B1 (en) 1999-06-29 2002-03-19 Applied Materials, Inc. Method for endpoint detection using throttle valve position
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
US6399501B2 (en) * 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
JP3259225B2 (ja) 1999-12-27 2002-02-25 株式会社ニコン 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス
JP2001287159A (ja) 2000-04-05 2001-10-16 Nikon Corp 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法
EP1309849A2 (en) * 2000-08-10 2003-05-14 Therma-Wave, Inc. Database interpolation method for optical measurement of diffractive microstructures
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6676482B2 (en) * 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (ja) 2001-05-31 2002-12-13 Omron Corp 研磨終点検出方法およびその装置
US6762838B2 (en) * 2001-07-02 2004-07-13 Tevet Process Control Technologies Ltd. Method and apparatus for production line screening
JP3932836B2 (ja) 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6678046B2 (en) * 2001-08-28 2004-01-13 Therma-Wave, Inc. Detector configurations for optical metrology
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US6898596B2 (en) * 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
WO2003058687A1 (en) * 2001-12-31 2003-07-17 Tokyo Electron Limited Method of detecting, identifying and correcting process performance
US6942546B2 (en) 2002-01-17 2005-09-13 Asm Nutool, Inc. Endpoint detection for non-transparent polishing member
US6813034B2 (en) * 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
US6947135B2 (en) * 2002-07-01 2005-09-20 Therma-Wave, Inc. Reduced multicubic database interpolation method for optical measurement of diffractive microstructures
JP4542324B2 (ja) 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
US6885467B2 (en) * 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
US8257546B2 (en) 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
JP4996245B2 (ja) * 2003-04-29 2012-08-08 アノト アクティエボラーク 位置復号のための方法、装置、コンピュータプログラム及び記憶媒体
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
JP4464642B2 (ja) 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
JP2005159203A (ja) 2003-11-28 2005-06-16 Hitachi Ltd 膜厚計測方法及びその装置、研磨レート算出方法並びにｃｍｐ加工方法及びその装置
US7255771B2 (en) * 2004-03-26 2007-08-14 Applied Materials, Inc. Multiple zone carrier head with flexible membrane
US7120553B2 (en) 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7406394B2 (en) 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
KR101398567B1 (ko) * 2005-08-22 2014-05-22 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
KR101324644B1 (ko) * 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
KR101504508B1 (ko) 2007-02-23 2015-03-20 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070042675A1 (en) * 2005-08-22 2007-02-22 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing

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US8569174B2 (en) 2013-10-29
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JP2013232660A (ja) 2013-11-14
US9142466B2 (en) 2015-09-22
KR20090112765A (ko) 2009-10-28
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WO2008103964A3 (en) 2008-11-27
WO2008103964A2 (en) 2008-08-28
KR101678082B1 (ko) 2016-11-21
EP2125291A2 (en) 2009-12-02
KR20140147146A (ko) 2014-12-29
TWI445098B (zh) 2014-07-11
US20080206993A1 (en) 2008-08-28
EP2125291A4 (en) 2013-08-07
TW200849416A (en) 2008-12-16
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