KR101489987B1 - 열전도 개스킷을 이용하는 전극 어셈블리 및 플라즈마 처리 챔버 - Google Patents

열전도 개스킷을 이용하는 전극 어셈블리 및 플라즈마 처리 챔버 Download PDF

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KR101489987B1
KR101489987B1 KR1020107020766A KR20107020766A KR101489987B1 KR 101489987 B1 KR101489987 B1 KR 101489987B1 KR 1020107020766 A KR1020107020766 A KR 1020107020766A KR 20107020766 A KR20107020766 A KR 20107020766A KR 101489987 B1 KR101489987 B1 KR 101489987B1
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showerhead
thermal
conductive gasket
electrode
backside
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KR20100125328A (ko
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로저 패트릭
라진더 딘드사
그레그 베텐코트
알렉세이 마라크타노프
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020107020766A 2008-03-18 2009-02-04 열전도 개스킷을 이용하는 전극 어셈블리 및 플라즈마 처리 챔버 Active KR101489987B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/050,195 US8187413B2 (en) 2008-03-18 2008-03-18 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US12/050,195 2008-03-18
PCT/US2009/033060 WO2009117181A1 (en) 2008-03-18 2009-02-04 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket

Publications (2)

Publication Number Publication Date
KR20100125328A KR20100125328A (ko) 2010-11-30
KR101489987B1 true KR101489987B1 (ko) 2015-02-04

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KR1020107020766A Active KR101489987B1 (ko) 2008-03-18 2009-02-04 열전도 개스킷을 이용하는 전극 어셈블리 및 플라즈마 처리 챔버

Country Status (6)

Country Link
US (1) US8187413B2 (enExample)
JP (1) JP5579162B2 (enExample)
KR (1) KR101489987B1 (enExample)
CN (1) CN101978793B (enExample)
TW (1) TWI412301B (enExample)
WO (1) WO2009117181A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7721488B1 (en) * 2005-10-05 2010-05-25 Bennett Scott A Flashing apparatus for external use on structures
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8187413B2 (en) 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
KR101612741B1 (ko) * 2010-03-08 2016-04-18 주성엔지니어링(주) 가스분배수단 및 이를 포함한 기판처리장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US20120073752A1 (en) * 2010-09-24 2012-03-29 Memc Electronic Materials, Inc. Adapter Ring For Silicon Electrode
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5762798B2 (ja) * 2011-03-31 2015-08-12 東京エレクトロン株式会社 天井電極板及び基板処理載置
JP2013254901A (ja) 2012-06-08 2013-12-19 Toshiba Corp シール材およびエッチング装置
WO2017176521A1 (en) 2016-04-04 2017-10-12 Commscope Technologies Llc Systems and methods for thermal management for high power density emi shielded electronic devices
US10607817B2 (en) * 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
CN110942969B (zh) * 2018-09-21 2022-08-23 中微半导体设备(上海)股份有限公司 一种气体喷淋头组件及其等离子体处理设备
CN111524775B (zh) * 2019-02-01 2023-03-10 中微半导体设备(上海)股份有限公司 一种等离子处理器以及用于等离子处理器的上电极组件
JP7583663B2 (ja) * 2021-04-01 2024-11-14 東京エレクトロン株式会社 上部電極アセンブリ
CN120221370A (zh) * 2023-12-27 2025-06-27 中微半导体设备(上海)股份有限公司 等离子体处理设备、上电极组件及其装配方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315262A (ja) * 1992-05-07 1993-11-26 Hitachi Ltd 半導体製造装置
JPH11256370A (ja) * 1998-03-09 1999-09-21 Mitsubishi Materials Corp 放熱性を有するプラズマエッチング用シリコン電極板
US20070187038A1 (en) * 2006-02-13 2007-08-16 Daxing Ren Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch

Family Cites Families (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783173A (en) * 1972-05-19 1974-01-01 Us Army Gasket-electrically conductive
US4654754A (en) * 1982-11-02 1987-03-31 Fairchild Weston Systems, Inc. Thermal link
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US4782893A (en) * 1986-09-15 1988-11-08 Trique Concepts, Inc. Electrically insulating thermally conductive pad for mounting electronic components
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
JP2889649B2 (ja) * 1990-04-09 1999-05-10 東京エレクトロン株式会社 熱処理装置
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
DE69328687D1 (de) * 1993-07-06 2000-06-21 Toshiba Kawasaki Kk Wärmeleitende platte
CA2129073C (en) * 1993-09-10 2007-06-05 John P. Kalinoski Form-in-place emi gaskets
DE4339786C5 (de) * 1993-11-18 2004-02-05 Emi-Tec Elektronische Materialien Gmbh Verfahren zur Herstellung einer Anordung zur Wärmeableitung
US5545473A (en) * 1994-02-14 1996-08-13 W. L. Gore & Associates, Inc. Thermally conductive interface
JPH07335635A (ja) * 1994-06-10 1995-12-22 Souzou Kagaku:Kk 平行平板形ドライエッチング装置
US5679457A (en) * 1995-05-19 1997-10-21 The Bergquist Company Thermally conductive interface for electronic devices
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3113796B2 (ja) * 1995-07-10 2000-12-04 東京エレクトロン株式会社 プラズマ処理装置
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
JP3480271B2 (ja) * 1997-10-07 2003-12-15 東京エレクトロン株式会社 熱処理装置のシャワーヘッド構造
US6096414A (en) * 1997-11-25 2000-08-01 Parker-Hannifin Corporation High dielectric strength thermal interface material
US6131646A (en) * 1998-01-19 2000-10-17 Trw Inc. Heat conductive interface material
US6220607B1 (en) * 1998-04-17 2001-04-24 Applied Materials, Inc. Thermally conductive conformal media
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6050216A (en) * 1998-08-21 2000-04-18 M.E.C. Technology, Inc. Showerhead electrode for plasma processing
US6379491B1 (en) * 1998-10-30 2002-04-30 Promos Technologies, Inc. Plasma chamber with erosion resistive securement screws
US6165612A (en) * 1999-05-14 2000-12-26 The Bergquist Company Thermally conductive interface layers
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6200415B1 (en) * 1999-06-30 2001-03-13 Lam Research Corporation Load controlled rapid assembly clamp ring
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6496373B1 (en) * 1999-11-04 2002-12-17 Amerasia International Technology, Inc. Compressible thermally-conductive interface
US6343647B2 (en) * 2000-01-11 2002-02-05 Thermax International, Ll.C. Thermal joint and method of use
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6170432B1 (en) * 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6475933B1 (en) * 2000-01-27 2002-11-05 Northrop Grumman Corporation Highly conductive elastomeric sheet
JP3990867B2 (ja) * 2000-01-31 2007-10-17 キヤノン株式会社 堆積膜形成装置および堆積膜形成方法
ATE380311T1 (de) * 2000-03-06 2007-12-15 Interface Solutions Inc Flachdichtungen mit kontrollierten haftungseigenschaften an den flanschoberflächen
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
US6412437B1 (en) * 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP2002164327A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp 半導体製造装置用石英チャンバー
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6651736B2 (en) * 2001-06-28 2003-11-25 Intel Corporation Short carbon fiber enhanced thermal grease
US20030106644A1 (en) * 2001-07-19 2003-06-12 Sirkis Murray D. Electrode apparatus and method for plasma processing
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US20050127329A1 (en) * 2001-08-17 2005-06-16 Chyi-Shan Wang Method of forming nanocomposite materials
JP4102873B2 (ja) * 2002-03-29 2008-06-18 東京エレクトロン株式会社 プラズマ処理装置用電極板及びプラズマ処理装置
JP3868341B2 (ja) * 2002-04-22 2007-01-17 日清紡績株式会社 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置
US7208192B2 (en) * 2002-05-31 2007-04-24 Parker-Hannifin Corporation Thermally or electrically-conductive form-in-place gap filter
JP3714924B2 (ja) * 2002-07-11 2005-11-09 東京エレクトロン株式会社 プラズマ処理装置
WO2004065926A1 (en) * 2003-01-23 2004-08-05 William Marsh Rice University Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices
US7153388B2 (en) * 2003-03-31 2006-12-26 Lam Research Corporation Chamber for high-pressure wafer processing and method for making the same
US7205050B2 (en) * 2003-06-09 2007-04-17 Permatex, Inc. Low shear adhesion RTV silicone
JP2005019606A (ja) * 2003-06-25 2005-01-20 Anelva Corp プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置
US7137444B2 (en) * 2003-09-08 2006-11-21 Pacific Rubber & Packing, Inc. Heat-transfer interface device between a source of heat and a heat-receiving object
JP2005093484A (ja) * 2003-09-12 2005-04-07 Toppan Printing Co Ltd ステンシルマスク及びその製造方法
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
IL160145A0 (en) * 2004-01-29 2004-06-20 Univ Ben Gurion Method for the preparation of dispersions of carbon nanotubes
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
JP2005228954A (ja) * 2004-02-13 2005-08-25 Fujitsu Ltd 熱伝導機構、放熱システムおよび通信装置
CN1669796B (zh) * 2004-02-23 2012-05-23 周星工程股份有限公司 用于制造显示基板的装置及装配在其中的喷头组合
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
KR100628888B1 (ko) * 2004-12-27 2006-09-26 삼성전자주식회사 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US7348366B2 (en) * 2005-04-07 2008-03-25 Freudenberg-Nok General Partnership High temperature elastomers with low hydrocarbon vapor permeability
KR100745971B1 (ko) 2005-04-08 2007-08-02 정경철 7개 규격의 시력교정용 핀홀렌즈 세트
JP4506557B2 (ja) 2005-05-18 2010-07-21 株式会社島津製作所 シャワーヘッドおよび表面波励起プラズマ処理装置
KR100629358B1 (ko) * 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US7895970B2 (en) * 2005-09-29 2011-03-01 Tokyo Electron Limited Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
JP4777790B2 (ja) 2005-09-29 2011-09-21 東京エレクトロン株式会社 プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置
JP5233082B2 (ja) * 2006-05-17 2013-07-10 東洋製罐グループホールディングス株式会社 プラズマ処理装置
US20080081114A1 (en) * 2006-10-03 2008-04-03 Novellus Systems, Inc. Apparatus and method for delivering uniform fluid flow in a chemical deposition system
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
JP2008103589A (ja) 2006-10-20 2008-05-01 Tokyo Cathode Laboratory Co Ltd 半導体処理装置用シャワーヘッド及び半導体処理装置のシャワーヘッドに用いられる表側電極板
US7806413B2 (en) * 2006-11-08 2010-10-05 Federal-Mogul Corporation Static gasket
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8313610B2 (en) * 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8152954B2 (en) * 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
KR101708060B1 (ko) 2008-03-14 2017-02-17 램 리써치 코포레이션 캠 고정 전극 클램프
US8187413B2 (en) 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8272346B2 (en) * 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315262A (ja) * 1992-05-07 1993-11-26 Hitachi Ltd 半導体製造装置
JPH11256370A (ja) * 1998-03-09 1999-09-21 Mitsubishi Materials Corp 放熱性を有するプラズマエッチング用シリコン電極板
US20070187038A1 (en) * 2006-02-13 2007-08-16 Daxing Ren Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch

Also Published As

Publication number Publication date
CN101978793A (zh) 2011-02-16
US20090236040A1 (en) 2009-09-24
JP2011517834A (ja) 2011-06-16
JP5579162B2 (ja) 2014-08-27
TWI412301B (zh) 2013-10-11
WO2009117181A1 (en) 2009-09-24
KR20100125328A (ko) 2010-11-30
US8187413B2 (en) 2012-05-29
TW200952564A (en) 2009-12-16
CN101978793B (zh) 2014-04-16

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