JP5579162B2 - 電極アセンブリ及び熱伝導ガスケットを用いるプラズマ処理チャンバ - Google Patents

電極アセンブリ及び熱伝導ガスケットを用いるプラズマ処理チャンバ Download PDF

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Publication number
JP5579162B2
JP5579162B2 JP2011500822A JP2011500822A JP5579162B2 JP 5579162 B2 JP5579162 B2 JP 5579162B2 JP 2011500822 A JP2011500822 A JP 2011500822A JP 2011500822 A JP2011500822 A JP 2011500822A JP 5579162 B2 JP5579162 B2 JP 5579162B2
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electrode
showerhead
electrode assembly
control plate
gasket
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Japanese (ja)
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JP2011517834A5 (enExample
JP2011517834A (ja
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パトリック・ロジャー
ディンドサ・ラジンダー
ベテンコート・グレッグ
マラクタノブ・アレクセイ
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2011500822A 2008-03-18 2009-02-04 電極アセンブリ及び熱伝導ガスケットを用いるプラズマ処理チャンバ Active JP5579162B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/050,195 2008-03-18
US12/050,195 US8187413B2 (en) 2008-03-18 2008-03-18 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
PCT/US2009/033060 WO2009117181A1 (en) 2008-03-18 2009-02-04 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket

Publications (3)

Publication Number Publication Date
JP2011517834A JP2011517834A (ja) 2011-06-16
JP2011517834A5 JP2011517834A5 (enExample) 2012-03-22
JP5579162B2 true JP5579162B2 (ja) 2014-08-27

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ID=41087724

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JP2011500822A Active JP5579162B2 (ja) 2008-03-18 2009-02-04 電極アセンブリ及び熱伝導ガスケットを用いるプラズマ処理チャンバ

Country Status (6)

Country Link
US (1) US8187413B2 (enExample)
JP (1) JP5579162B2 (enExample)
KR (1) KR101489987B1 (enExample)
CN (1) CN101978793B (enExample)
TW (1) TWI412301B (enExample)
WO (1) WO2009117181A1 (enExample)

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Also Published As

Publication number Publication date
US8187413B2 (en) 2012-05-29
KR101489987B1 (ko) 2015-02-04
CN101978793B (zh) 2014-04-16
CN101978793A (zh) 2011-02-16
US20090236040A1 (en) 2009-09-24
TWI412301B (zh) 2013-10-11
TW200952564A (en) 2009-12-16
WO2009117181A1 (en) 2009-09-24
KR20100125328A (ko) 2010-11-30
JP2011517834A (ja) 2011-06-16

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