CN101978793B - 采用导热垫圈的电极组件和等离子处理室 - Google Patents

采用导热垫圈的电极组件和等离子处理室 Download PDF

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Publication number
CN101978793B
CN101978793B CN200980110113.4A CN200980110113A CN101978793B CN 101978793 B CN101978793 B CN 101978793B CN 200980110113 A CN200980110113 A CN 200980110113A CN 101978793 B CN101978793 B CN 101978793B
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disconnection
electrode
control plate
thermal control
hot interface
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Chinese (zh)
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CN101978793A (zh
Inventor
罗杰·帕特里克
拉金德尔·德辛德萨
格雷格·贝当古
阿列克谢·马拉赫塔诺夫
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN200980110113.4A 2008-03-18 2009-02-04 采用导热垫圈的电极组件和等离子处理室 Active CN101978793B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/050,195 2008-03-18
US12/050,195 US8187413B2 (en) 2008-03-18 2008-03-18 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
PCT/US2009/033060 WO2009117181A1 (en) 2008-03-18 2009-02-04 Electrode assembly and plasma processing chamber utilizing thermally conductive gasket

Publications (2)

Publication Number Publication Date
CN101978793A CN101978793A (zh) 2011-02-16
CN101978793B true CN101978793B (zh) 2014-04-16

Family

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CN200980110113.4A Active CN101978793B (zh) 2008-03-18 2009-02-04 采用导热垫圈的电极组件和等离子处理室

Country Status (6)

Country Link
US (1) US8187413B2 (enExample)
JP (1) JP5579162B2 (enExample)
KR (1) KR101489987B1 (enExample)
CN (1) CN101978793B (enExample)
TW (1) TWI412301B (enExample)
WO (1) WO2009117181A1 (enExample)

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CN111524775B (zh) * 2019-02-01 2023-03-10 中微半导体设备(上海)股份有限公司 一种等离子处理器以及用于等离子处理器的上电极组件
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Also Published As

Publication number Publication date
US8187413B2 (en) 2012-05-29
KR101489987B1 (ko) 2015-02-04
JP5579162B2 (ja) 2014-08-27
CN101978793A (zh) 2011-02-16
US20090236040A1 (en) 2009-09-24
TWI412301B (zh) 2013-10-11
TW200952564A (en) 2009-12-16
WO2009117181A1 (en) 2009-09-24
KR20100125328A (ko) 2010-11-30
JP2011517834A (ja) 2011-06-16

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