KR101478892B1 - 알카리 에칭액, 특히 텍스쳐 에칭액의 첨가제 및 그 생산 공정 - Google Patents
알카리 에칭액, 특히 텍스쳐 에칭액의 첨가제 및 그 생산 공정 Download PDFInfo
- Publication number
- KR101478892B1 KR101478892B1 KR1020127028184A KR20127028184A KR101478892B1 KR 101478892 B1 KR101478892 B1 KR 101478892B1 KR 1020127028184 A KR1020127028184 A KR 1020127028184A KR 20127028184 A KR20127028184 A KR 20127028184A KR 101478892 B1 KR101478892 B1 KR 101478892B1
- Authority
- KR
- South Korea
- Prior art keywords
- phase mixture
- single phase
- additive
- etchant
- mixture
- Prior art date
Links
- 239000000654 additive Substances 0.000 title claims abstract description 21
- 230000000996 additive effect Effects 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 36
- 238000005530 etching Methods 0.000 title claims description 27
- 230000008569 process Effects 0.000 title description 26
- 239000000203 mixture Substances 0.000 claims abstract description 105
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 28
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 39
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 37
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims description 20
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 20
- 239000002585 base Substances 0.000 claims description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 238000002845 discoloration Methods 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000007792 addition Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 150000007513 acids Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 2
- -1 hydroxide ions Chemical class 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010019079.9 | 2010-04-30 | ||
DE102010019079A DE102010019079A1 (de) | 2010-04-30 | 2010-04-30 | Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen, sowie Verfahren zu dessen Herstellung |
PCT/IB2011/000900 WO2011135435A1 (en) | 2010-04-30 | 2011-04-27 | Additive for alkaline etching solutions, in particular for texture etching solutions, and process for producing it |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130028730A KR20130028730A (ko) | 2013-03-19 |
KR101478892B1 true KR101478892B1 (ko) | 2015-01-05 |
Family
ID=44358213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127028184A KR101478892B1 (ko) | 2010-04-30 | 2011-04-27 | 알카리 에칭액, 특히 텍스쳐 에칭액의 첨가제 및 그 생산 공정 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2470619A1 (zh) |
JP (1) | JP5632533B2 (zh) |
KR (1) | KR101478892B1 (zh) |
CN (1) | CN102695778B (zh) |
DE (1) | DE102010019079A1 (zh) |
TW (1) | TWI467054B (zh) |
WO (1) | WO2011135435A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102877135B (zh) * | 2012-09-07 | 2015-11-25 | 湖州三峰能源科技有限公司 | 单晶硅片碱性环保型无醇制绒液的添加剂及其使用方法 |
TWI506122B (zh) * | 2012-09-20 | 2015-11-01 | 財團法人工業技術研究院 | 一種半導體晶片之蝕刻組成物及蝕刻方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5035809A (en) * | 1990-10-05 | 1991-07-30 | Eastman Kodak Company | Dichloromethane abatement |
US20090280597A1 (en) | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3998659A (en) | 1974-01-28 | 1976-12-21 | Texas Instruments Incorporated | Solar cell with semiconductor particles and method of fabrication |
US3909325A (en) * | 1974-06-28 | 1975-09-30 | Motorola Inc | Polycrystalline etch |
US5536439A (en) * | 1995-03-13 | 1996-07-16 | Gage Products Company | Non-abrasive line cleaning composition |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
JP2002322578A (ja) * | 2001-04-24 | 2002-11-08 | Noritake Co Ltd | アルミニウム薄膜のエッチング液およびアルミニウム薄膜パターン形成方法 |
DE102006051952A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
TW200908148A (en) * | 2007-03-31 | 2009-02-16 | Advanced Tech Materials | Methods for stripping material for wafer reclamation |
TW200842970A (en) * | 2007-04-26 | 2008-11-01 | Mallinckrodt Baker Inc | Polysilicon planarization solution for planarizing low temperature poly-silicon thin filim panels |
WO2009067475A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Crystalline solar cell metallization methods |
DE102008056086A1 (de) * | 2008-11-06 | 2010-05-12 | Gp Solar Gmbh | Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung |
-
2010
- 2010-04-30 DE DE102010019079A patent/DE102010019079A1/de not_active Ceased
-
2011
- 2011-04-25 TW TW100114245A patent/TWI467054B/zh not_active IP Right Cessation
- 2011-04-27 CN CN201180004300.1A patent/CN102695778B/zh not_active Expired - Fee Related
- 2011-04-27 WO PCT/IB2011/000900 patent/WO2011135435A1/en active Application Filing
- 2011-04-27 JP JP2013506772A patent/JP5632533B2/ja not_active Expired - Fee Related
- 2011-04-27 EP EP11727757A patent/EP2470619A1/en not_active Withdrawn
- 2011-04-27 KR KR1020127028184A patent/KR101478892B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5035809A (en) * | 1990-10-05 | 1991-07-30 | Eastman Kodak Company | Dichloromethane abatement |
US20090280597A1 (en) | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
Also Published As
Publication number | Publication date |
---|---|
CN102695778A (zh) | 2012-09-26 |
JP2013526050A (ja) | 2013-06-20 |
TW201211313A (en) | 2012-03-16 |
DE102010019079A1 (de) | 2011-11-03 |
JP5632533B2 (ja) | 2014-11-26 |
EP2470619A1 (en) | 2012-07-04 |
CN102695778B (zh) | 2015-10-21 |
WO2011135435A1 (en) | 2011-11-03 |
KR20130028730A (ko) | 2013-03-19 |
TWI467054B (zh) | 2015-01-01 |
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