KR101472733B1 - 이산화규소 막의 증착 방법 - Google Patents

이산화규소 막의 증착 방법 Download PDF

Info

Publication number
KR101472733B1
KR101472733B1 KR1020100134279A KR20100134279A KR101472733B1 KR 101472733 B1 KR101472733 B1 KR 101472733B1 KR 1020100134279 A KR1020100134279 A KR 1020100134279A KR 20100134279 A KR20100134279 A KR 20100134279A KR 101472733 B1 KR101472733 B1 KR 101472733B1
Authority
KR
South Korea
Prior art keywords
film
plasma
chamber
pecvd
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020100134279A
Other languages
English (en)
Korean (ko)
Other versions
KR20110074478A (ko
Inventor
카테리네 기레스
엔드류 프린스
스테판 로버츠 벨드지스
다니엘 토머스 알찰드
Original Assignee
에스피피 프로세스 테크놀로지 시스템즈 유케이 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스피피 프로세스 테크놀로지 시스템즈 유케이 리미티드 filed Critical 에스피피 프로세스 테크놀로지 시스템즈 유케이 리미티드
Publication of KR20110074478A publication Critical patent/KR20110074478A/ko
Application granted granted Critical
Publication of KR101472733B1 publication Critical patent/KR101472733B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020100134279A 2009-12-24 2010-12-24 이산화규소 막의 증착 방법 Active KR101472733B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0922647.3A GB0922647D0 (en) 2009-12-24 2009-12-24 Methods of depositing SiO² films
GB0922647.3 2009-12-24

Publications (2)

Publication Number Publication Date
KR20110074478A KR20110074478A (ko) 2011-06-30
KR101472733B1 true KR101472733B1 (ko) 2014-12-15

Family

ID=41716978

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100134279A Active KR101472733B1 (ko) 2009-12-24 2010-12-24 이산화규소 막의 증착 방법

Country Status (6)

Country Link
EP (1) EP2362003B1 (https=)
JP (1) JP6058876B2 (https=)
KR (1) KR101472733B1 (https=)
CN (1) CN102108497B (https=)
GB (1) GB0922647D0 (https=)
TW (1) TWI518201B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329575B2 (en) * 2010-12-22 2012-12-11 Applied Materials, Inc. Fabrication of through-silicon vias on silicon wafers
GB201207448D0 (en) * 2012-04-26 2012-06-13 Spts Technologies Ltd Method of depositing silicon dioxide films
JP2015029004A (ja) * 2013-07-30 2015-02-12 株式会社アルバック プラズマｃｖｄ装置及び成膜方法
GB201410317D0 (en) * 2014-06-10 2014-07-23 Spts Technologies Ltd Substrate
US9390910B2 (en) * 2014-10-03 2016-07-12 Applied Materials, Inc. Gas flow profile modulated control of overlay in plasma CVD films
KR101772772B1 (ko) * 2015-12-08 2017-08-29 주식회사 포스코 표면 처리된 기판 및 이의 제조방법
WO2017051993A1 (ko) * 2015-09-21 2017-03-30 주식회사 포스코 발색 처리된 기판 및 이를 위한 발색 처리방법
GB201522552D0 (en) * 2015-12-21 2016-02-03 Spts Technologies Ltd Method of improving adhesion
CN106783535A (zh) * 2016-11-28 2017-05-31 武汉新芯集成电路制造有限公司 一种改善peteos薄膜缺陷的方法和半导体结构
CN108018538A (zh) * 2017-11-24 2018-05-11 中航（重庆）微电子有限公司 采用pe-teos工艺制备二氧化硅薄膜的方法及设备
CN111235547B (zh) * 2020-04-27 2020-08-07 上海陛通半导体能源科技股份有限公司 化学气相沉积方法
CN114000123A (zh) * 2021-11-02 2022-02-01 浙江光特科技有限公司 一种制备SiO2薄膜的方法、芯片及装置
KR102896684B1 (ko) * 2022-12-16 2025-12-09 주식회사 원익아이피에스 실리콘 산화막 형성 방법
CN116479405A (zh) * 2023-06-08 2023-07-25 上海陛通半导体能源科技股份有限公司 一种12英寸超高均匀性非晶氧化硅薄膜的化学气相沉积方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629227B1 (en) * 2006-11-01 2009-12-08 Novellus Systems, Inc. CVD flowable gap fill

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356722A (en) * 1992-06-10 1994-10-18 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
DE19523442A1 (de) * 1995-06-28 1997-01-02 Antec Angewandte Neue Technolo Verfahren zur Beschichtung von Gegenständen aus Metall oder Metall-Legierungen oder entsprechenden Oberflächen
JP2973905B2 (ja) * 1995-12-27 1999-11-08 日本電気株式会社 半導体装置の製造方法
US6028014A (en) * 1997-11-10 2000-02-22 Lsi Logic Corporation Plasma-enhanced oxide process optimization and material and apparatus therefor
JP3933793B2 (ja) * 1998-06-16 2007-06-20 富士通株式会社 シリコン酸化膜の形成方法及び薄膜磁気ヘッドの製造方法
JP3248492B2 (ja) * 1998-08-14 2002-01-21 日本電気株式会社 半導体装置及びその製造方法
JP3184177B2 (ja) * 1999-03-26 2001-07-09 キヤノン販売株式会社 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
JP2005150299A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp 半導体チップ、半導体装置及び半導体装置の製造方法、回路基板及び電子機器
JP4985411B2 (ja) * 2008-01-08 2012-07-25 住友電気工業株式会社 半導体光素子を作製する方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629227B1 (en) * 2006-11-01 2009-12-08 Novellus Systems, Inc. CVD flowable gap fill

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IEEE Electron Device Letters, Vol. 12, No. 5, Pages 236-237(공개일: 1991. 5.). *
IEEE Electron Device Letters, Vol. 12, No. 5, Pages 236-237(공개일: 1991. 5.).*
J. Phys. D: Appl. Phys. Vol. 37, Pages 2425-2431(공개일: 2004. 8. 18.). *
J. Phys. D: Appl. Phys. Vol. 37, Pages 2425-2431(공개일: 2004. 8. 18.).*

Also Published As

Publication number Publication date
EP2362003A3 (en) 2011-09-07
TW201139719A (en) 2011-11-16
JP6058876B2 (ja) 2017-01-11
KR20110074478A (ko) 2011-06-30
CN102108497A (zh) 2011-06-29
TWI518201B (zh) 2016-01-21
EP2362003B1 (en) 2017-07-05
EP2362003A2 (en) 2011-08-31
GB0922647D0 (en) 2010-02-10
JP2011135084A (ja) 2011-07-07
CN102108497B (zh) 2015-07-15

Similar Documents

Publication Publication Date Title
KR101472733B1 (ko) 이산화규소 막의 증착 방법
US7989365B2 (en) Remote plasma source seasoning
CN100530554C (zh) Hdp-cvd多步间隙填充处理
US7435684B1 (en) Resolving of fluorine loading effect in the vacuum chamber
US20130288485A1 (en) Densification for flowable films
US7211525B1 (en) Hydrogen treatment enhanced gap fill
KR102221064B1 (ko) 실리콘 디옥사이드를 증착하는 방법
US20050178333A1 (en) System and method of CVD chamber cleaning
KR100816698B1 (ko) 다공성 ｓｏｇ 필름의 제조방법
JPH09270421A (ja) 表面処理装置および表面処理方法
JP2011508434A (ja) 低ウェットエッチング速度の窒化シリコン膜
JP2016503966A (ja) 高密度プラズマを実施する窒化ケイ素間隙充填
KR20010075566A (ko) 반도체 장치 및 그 제조 방법
JP2020517103A (ja) 遠隔窒素ラジカル源によって可能となる高堆積速度高品質の窒化ケイ素
Archard et al. Low temperature PECVD of dielectric films for TSV applications
EP0518544B1 (en) Anisotropic deposition of dielectrics
US20110318502A1 (en) Methods of depositing sio2 films
JP2004349458A (ja) フッ素添加カーボン膜の形成方法
CN105765705B (zh) 氮化硅膜及其制造方法与其制造装置
JPH09167766A (ja) プラズマ化学気相成長装置及び半導体装置の製造方法
CN113802108A (zh) 沉积的方法
US7335584B2 (en) Method of using SACVD deposition and corresponding deposition reactor
CN102709176B (zh) Mim型电容中绝缘体二氧化硅薄膜的制备方法
JP4167645B2 (ja) 半導体装置及びその製造方法
US20010018275A1 (en) Method of using SACVD deposition and corresponding deposition reactor

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20171130

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000