KR101463030B1 - Organic light emitting diode display device and method of fabricating the same - Google Patents

Abstract

The organic light emitting diode (OLED) display device and the method of manufacturing the same according to the present invention can cope with large area patterning and high definition by patterning OLED pixels through a photolithography process, A method for improving a device efficiency by forming a buffer layer of a metal oxide or protecting an organic compound layer by patterning an organic compound layer using a cathode as a mask, the method comprising: forming a first electrode on a substrate; Forming a first light emitting layer made of a first organic film on the substrate through a first photo process; Forming a second light emitting layer made of a second organic film on the substrate through a second photolithography process; Depositing a third organic film on the first and second photosensitive resin patterns remaining in the first and second photolithography processes; The third organic film deposited on the first and second photosensitive resin patterns is removed together with the first and second photosensitive resin patterns through a lift-off process so that the third organic film Forming a third light-emitting layer comprising a first light-emitting layer; And forming a second electrode on the first, second, and third light emitting layers.
In addition, the OLED display device and the method of manufacturing the same of the present invention simplify the process by forming two pixels of red, green and blue pixels through a lift-off process and depositing the remaining one pixel without patterning, Can be increased.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same, and more particularly, to an organic light emitting diode display device in which OLED pixels are patterned through a photolithography process, .

In recent years, there has been a growing interest in information display and a demand for a portable information medium has increased, and a lightweight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out.

In the field of flat panel display devices, a liquid crystal display device (LCD), which is light and consumes little power, has been attracting the most attention, but the liquid crystal display device is not a light emitting device but a light receiving device, ratio and viewing angle. Therefore, a new display device which can overcome such disadvantages is being actively developed.

Since the organic light emitting diode display device, which is one of the new display devices, is self-emitting type, it has a better viewing angle and contrast ratio than the liquid crystal display device and does not require a backlight. Do. In addition, it has the advantage of being able to drive a DC low voltage and has a high response speed, and is particularly advantageous in terms of manufacturing cost.

Unlike a liquid crystal display device or a plasma display panel (PDP), the manufacturing process of the organic light emitting diode display device is very simple because the deposition and encapsulation processes are all processes . Further, if the organic light emitting diode display device is driven by an active matrix method having a thin film transistor (TFT) as a switching element for each pixel, even if a low current is applied, the same luminance is exhibited, It has advantages of fixed tax and large size.

Hereinafter, the basic structure and operational characteristics of the organic light emitting diode display device will be described in detail with reference to the drawings.

1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display device.

A general organic light emitting diode display device includes an organic light emitting diode as shown in FIG. The organic light emitting diode includes organic compound layers 30a, 30b, 30c, 30d and 30e formed between an anode 18, which is a pixel electrode, and a cathode 28, which is a common electrode.

The hole injection layer 30a, the hole transport layer 30b, the emission layer 30c, the electron injection layer 30b, the electron injection layer 30c, and the electron injection layer 30c are formed on the organic compound layers 30a, 30b, 30c, An electron transport layer 30d, and an electron injection layer 30e.

When a driving voltage is applied to the anode 18 and the cathode 28, holes passing through the hole transport layer 30b and electrons passing through the electron transport layer 30d move to the light emitting layer 30c to form excitons, As a result, the light emitting layer 30c emits visible light.

The organic light emitting diode display device displays an image by arranging pixels having organic light emitting diodes of the above-described structure in a matrix form and selectively controlling the pixels with a data voltage and a scan voltage.

The organic light emitting diode display device is divided into an active matrix display device using a passive matrix or a switching device using a TFT. The active matrix method selectively turns on the TFT, which is an active element, to select a pixel and maintain the light emission of the pixel at a voltage held in a storage capacitor.

FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. In FIG. 2, in an organic light emitting diode display device of an active matrix type, a typical 2T1C (including two transistors and one capacitor) An equivalent circuit diagram is shown by way of example.

2, the pixels of the active matrix type organic light emitting diode display device include an organic light emitting diode OLED, a data line DL and a gate line GL intersecting with each other, a switching TFT SW, a driving TFT DR and a storage capacitor Cst.

At this time, the switching TFT SW is turned on in response to a scan pulse from the gate line GL, thereby conducting a current path between the source electrode and the drain electrode. The data voltage from the data line DL during the on-time period of the switching TFT SW is supplied to the gate electrode of the driving TFT DR and the storage capacitor Cst through the source electrode and the drain electrode of the switching TFT SW, .

At this time, the driving TFT DR controls a current flowing in the organic light emitting diode OLED according to a data voltage applied to its gate electrode. Then, the storage capacitor Cst stores the voltage between the data voltage and the low potential power supply voltage VSS, and keeps it constant for one frame period.

A vacuum deposition method is mainly used as a method for forming layers of organic compound layers constituting the organic light emitting diode display device.

At this time, in order to use the vacuum deposition method, a mask (shadow mask) or a fine metal mask (FMM) having a plurality of openings corresponding to a plurality of pixel regions is used, It is not easy to cope with the enlargement of the substrate size and the high definition of the pattern for implementing a high resolution display.

That is, the FMM is manufactured by forming a pattern-shaped hole to be deposited on a thin metal plate and extending the same to form a small size pattern, which makes it difficult to miniaturize the OLED there was. In addition, due to the nature of a fine metal mask, warpage phenomenon occurs when a mask is made large for a large area, and there is a problem that a pattern is distorted, and a yield is lowered.

An object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same that can cope with large area patterning and high definition by patterning OLED pixels through a photolithography process.

It is another object of the present invention to provide an organic light emitting diode display device and a method of manufacturing the same that protect the light emitting layer in the patterning process through the photolithography process.

It is still another object of the present invention to provide an organic light emitting diode display device and a method of manufacturing the same that simplify a process and increase efficiency.

Other objects and features of the present invention will be described in the following description of the invention and the claims.

According to an aspect of the present invention, there is provided a white organic light emitting diode display comprising: a first electrode formed on a substrate; A hole injection layer and a hole transport layer formed on the substrate on which the first electrode is formed; A first light emitting layer formed of a first organic film on the substrate on which the hole injecting layer and the hole transporting layer are formed; A second light emitting layer formed of a second organic film on the substrate on which the first light emitting layer is formed; A third light emitting layer formed by depositing a third organic film on the entire surface of the substrate on which the first light emitting layer and the second light emitting layer are formed; And an electron injection layer and a second electrode formed on the third light emitting layer.

In this case, the third light emitting layer is formed not only between the first light emitting layer and the second light emitting layer, but also on the first light emitting layer and the second light emitting layer.

Another white OLED display device of the present invention includes a first electrode formed on a substrate; A first hole injection layer, a first hole transport layer, a first emission layer, a first electron transport layer, a first electron injection layer, and a first buffer layer stacked in a first emission region on the substrate on which the first electrode is formed; A second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer stacked on a second light emitting region on the substrate on which the first electrode is formed; A third hole transport layer, a third emission layer, a third electron transport layer, a third electron injection layer, and a third buffer layer stacked in a third emission region on the substrate on which the first electrode is formed; And a second electrode formed on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide.

The first, second, and third buffer layers may be formed of a Group 1-2, a Group 12-16 metal oxide, or a Group 3-12 transition metal oxide.

A method of fabricating an organic light emitting diode display device of the present invention includes: forming a first electrode on a substrate; Depositing a first organic layer on the substrate on which the first electrode is formed; Forming a first photosensitive resin pattern at a position where the first light emitting layer is formed on the substrate on which the first organic film is deposited through a first photolithography process; Selectively patterning the first organic layer using the first photosensitive resin pattern as a mask to form a first light emitting layer comprising the first organic layer; Depositing a second organic film on the substrate with the first photosensitive resin pattern remaining; Forming a second photosensitive resin pattern only at a position where the second light emitting layer is formed on the substrate on which the second organic film is deposited through a second photolithography process; Selectively patterning the second organic layer using the second photosensitive resin pattern as a mask to form a second light emitting layer comprising the second organic layer; Depositing a third organic film on the substrate with the first and second photosensitive resin patterns remaining thereon; Removing the third organic film deposited on the first and second photosensitive resin patterns together with the first and second photosensitive resin patterns through a lift-off process to form the first and second photosensitive resin patterns, Forming a third light emitting layer made of the third organic film on the entire surface between the light emitting layers; And forming a second electrode on the first, second, and third light emitting layers.

Another method of manufacturing an organic light emitting diode display device of the present invention includes the steps of: (a) forming a first electrode on a substrate; (b) forming a first photosensitive resin layer by applying a photosensitive resin to the entire surface of the substrate on which the first electrode is formed; (c) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position other than a position where the first light emitting layer is formed; (d) depositing a first organic film on the substrate in a state in which the first photosensitive resin pattern remains; (e) removing the first organic film deposited on the first photosensitive resin pattern together with the first photosensitive resin pattern through a lift-off process to form a first light emitting layer made of the first organic film on the substrate step; (f) forming a second light emitting layer made of a second organic film on the substrate through the same steps as the steps (b) to (e); (g) depositing a third organic layer on the entire surface of the substrate on which the first and second light emitting layers are formed, thereby forming a third light emitting layer composed of the third organic film on the whole between the first light emitting layer and the second light emitting layer; And (h) forming a second electrode on the substrate.

In this case, the third light emitting layer is formed between the first light emitting layer and the second light emitting layer.

The third light emitting layer is formed not only between the first light emitting layer and the second light emitting layer, but also on the first light emitting layer and the second light emitting layer.

In this case, a hole injecting layer and a hole transporting layer are formed on the substrate on which the first electrode is formed, and then the first light emitting layer is formed on the hole injecting layer and the hole transporting layer.

In this case, the first light emitting layer is formed of any one of red, green and blue light emitting layers.

In this case, the second light emitting layer is formed as the other light emitting layer of the red, green and blue light emitting layers.

In this case, the third light emitting layer is formed as the other light emitting layer of the red, green, and blue light emitting layers.

The electron transport layer and the electron injection layer are formed on the substrate on which the first, second and third light emitting layers are formed, and then the second electrode is formed thereon.

Another method of manufacturing an organic light emitting diode display device of the present invention includes: forming a first electrode on a substrate; Forming a first hole injection layer, a first hole transport layer, a first light emitting layer, a first electron transport layer, a first electron injection layer, and a first buffer layer on a substrate having the first electrode formed thereon through a first photo process; Forming a second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer on the substrate through a second photolithography process; Forming a third hole injection layer, a third hole transport layer, a third emission layer, a third electron transport layer, a third electron injection layer, and a third buffer layer on the substrate through a third photo process; And forming a second electrode on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide.

Another method of manufacturing an organic light emitting diode display device of the present invention includes the steps of: (a) forming a first electrode on a substrate; (b) forming a first photosensitive resin layer by applying a photosensitive resin to the entire surface of the substrate on which the first electrode is formed; (c) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position other than a position where the first light emitting layer is formed; (d) a thin film for a first hole injection layer, a thin film for a first hole transporting layer, a first organic film, a thin film for a first electron transporting layer, a thin film for a first electron injection layer, and a thin film for a first electron injection layer, 1 < / RTI > buffer layer; (e) a thin film for a first hole injection layer, a thin film for a first hole transporting layer, a first organic film, a thin film for a first electron transporting layer, and a first electron injection layer deposited on the first photosensitive resin pattern through a lift- The thin film and the thin film for the first buffer layer are removed together with the first photosensitive resin pattern, and the thin film for the first hole injection layer, the thin film for the first hole transporting layer, the first organic film, the thin film for the first electron transporting layer, Forming a first hole injecting layer, a first hole transporting layer, a first emitting layer, a first electron transporting layer, a first electron injecting layer, and a first buffer layer made of a thin film for one electron injecting layer and a thin film for a first buffer layer; (f) A second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer are formed on the substrate through the same steps as in steps (b) ; (g) A third hole injection layer, a third hole transport layer, a third light emitting layer, a third electron transport layer, a third electron injection layer, and a third buffer layer are formed on the substrate through the same steps as the steps (b) ; And (h) forming a second electrode on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide.

The step of laminating the first hole injection layer, the first hole transport layer, the first light emitting layer, the first electron transport layer, and the first buffer layer on the substrate may include forming a thin film for the first hole injection layer, Depositing a thin film, a first organic film, a thin film for a first electron transporting layer and a thin film for a first buffer layer; A first photosensitive resin layer is formed by applying a photosensitive resin over the entire surface of the substrate on which the thin film for the first hole injection layer, the thin film for the first hole transporting layer, the first organic film, the thin film for the first electron transporting layer and the thin film for the first buffer layer are deposited ; Exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position where the first light emitting layer is formed; And selectively etching the first hole injection layer thin film, the first hole transport layer thin film, the first organic film, the first electron transport layer thin film, and the first buffer layer thin film using the first photosensitive resin pattern as a mask, A first hole transport layer, a first hole transport layer, a first hole transport layer, a first hole injection layer, a first hole transport layer, a first organic layer, a first electron transport layer thin film, and a first buffer layer thin film, , A first electron transporting layer, and a first buffer layer.

The step of laminating the second hole injection layer, the second hole transporting layer, the second light emitting layer, the second electron transporting layer and the second buffer layer on the substrate may include forming a thin film for the second hole injection layer, a thin film for the second hole transporting layer, Depositing a second organic film, a thin film for the second electron transporting layer, and a thin film for the second buffer layer; A second photosensitive resin layer is formed by coating the entire surface of the substrate on which the thin film for the second hole injection layer, the thin film for the second hole transporting layer, the second organic film, the thin film for the second electron transporting layer and the thin film for the second buffer layer are deposited ; Exposing and developing the second photosensitive resin layer to form a second photosensitive resin pattern made of the photosensitive resin at a position where the second light emitting layer is formed; The second hole transport layer thin film, the second organic layer, the second electron transport layer thin film and the second buffer layer thin film are selectively etched using the second photosensitive resin pattern as a mask to form the second hole injection layer thin film, A second hole transporting layer, a second hole transporting layer, a second hole transporting layer, a second hole transporting layer, a second hole transporting layer, a second hole transporting layer, a second hole transporting layer, a second electron transporting layer, , A second electron transporting layer and a second buffer layer.

The step of laminating the third hole injection layer, the third hole transporting layer, the third light emitting layer, the third electron transporting layer and the third buffer layer on the substrate may include forming a thin film for the third hole injection layer, a thin film for the third hole transporting layer, A third electron transport layer thin film, and a third buffer layer thin film; A third photosensitive resin layer is formed by applying a photosensitive resin to the entire surface of the substrate on which the thin film for the third hole injection layer, the thin film for the third hole transporting layer, the third organic film, the thin film for the third electron transporting layer and the thin film for the third buffer layer are deposited ; Exposing and developing the third photosensitive resin layer to form a third photosensitive resin pattern made of the photosensitive resin at a position where the third light emitting layer is formed; The third hole injection layer thin film, the third hole transport layer thin film, the third organic film, the third electron transport layer thin film and the third buffer layer thin film are selectively etched using the third photosensitive resin pattern as a mask, A third hole transporting layer, a third hole transporting layer, a third hole transporting layer, a third hole transporting layer, a third hole transporting layer thin film, a third organic transporting layer, a third electron transporting layer thin film and a third buffer layer thin film, , A third electron transporting layer, and a third buffer layer.

The first, second, and third buffer layers are formed of a Group 1-2, a Group 12-16 metal oxide, or a Group 3-12 transition metal oxide.

Another method of manufacturing an organic light emitting diode display device of the present invention includes the steps of: (a) forming a fourth electrode on a substrate; (b) forming a first organic layer and a first conductive layer on the substrate on which the fourth electrode is formed; (c) forming a first photosensitive resin layer by coating a photosensitive resin on the entire surface of the substrate on which the first conductive film is formed; (d) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position where the first light emitting layer is formed; (e) selectively removing the first conductive film using the first photosensitive resin pattern as a mask to form a first electrode; (f) removing the first photosensitive resin pattern and selectively removing the exposed first organic layer under the first electrode as a mask to form a first light emitting layer composed of the first organic film; (g) forming a second light emitting layer and a second electrode on the substrate through the same steps as the steps (b) to (f); And (h) forming a third light emitting layer and a third electrode on the substrate through the same steps as the steps (b) to (f).

At this time, after forming the first hole injection layer thin film and the first hole transport layer thin film on the substrate having the anode formed thereon, the first organic film is formed, a thin film for the first electron transport layer is formed thereon, .

As described above, the organic light emitting diode display device and the method of manufacturing the same according to the present invention are capable of coping with large area patterning and high definition by patterning OLED pixels through a photolithography process, while forming a buffer layer of a metal oxide on the organic compound layer Or the organic compound layer is patterned using the cathode as a mask to protect the organic compound layer, thereby improving the device efficiency. At this time, the patterning through the photolithography process can be a solution process, and the driving voltage and power consumption of the manufactured device are reduced and the efficiency is improved as the light emitting layer is protected in the patterning process.

In addition, the organic light emitting diode display device and the method of manufacturing the same according to the present invention can simplify the process by patterning two pixels among red, green, and blue pixels through a lift-off process and depositing the remaining one pixel without patterning And provides an effect of increasing the efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining the principle of light emission of a general organic light emitting diode display element. FIG.
FIG. 2 is an equivalent circuit diagram for one pixel in a general organic light emitting diode display device. FIG.
FIGS. 3A to 3L are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention; FIGS.
4A to 4H are sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention.
5A to 5G are sectional views sequentially showing a method of manufacturing an organic light emitting diode display device according to a third embodiment of the present invention.
FIG. 6 is a graph showing a state where the lifetime of the device is reduced after the photolithography process. FIG.
7A to 7K are sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a fourth embodiment of the present invention.
8 is a cross-sectional view showing another example of the organic light emitting diode display device manufactured according to the fourth embodiment of the present invention shown in FIGS. 7A to 7K.
FIG. 9 is a sectional view showing another example of the organic light emitting diode display device manufactured according to the fourth embodiment of the present invention shown in FIGS. 7A to 7K. FIG.
10A to 10H are sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a fifth embodiment of the present invention.
11A to 11H are sectional views sequentially showing a method of manufacturing an organic light emitting diode display device according to a sixth embodiment of the present invention.

Hereinafter, exemplary embodiments of an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

Large area patterning of an organic compound layer of an organic light emitting diode display device can not be performed due to the problem of deflection of a substrate and a mask in a conventional method using a fine metal mask. Among them, a patterning method using a photolithography process (hereinafter referred to as a photolithography process) is proposed. The photolithography process is advantageous in that a large area patterning process and a high resolution process can be applied and a solution process can be applied have.

FIGS. 3A to 3L are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a first embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

In this case, for convenience, the method of manufacturing the organic light emitting diode for the pixels of 2T1C (including two transistors and one capacitor) is described as an example, but the present invention is not limited thereto.

First, an organic light emitting diode display device according to the first embodiment of the present invention includes a gate line including a first gate electrode on a substrate 110 made of an insulating material such as transparent glass or plastic, A storage electrode including a gate electrode may be formed.

A gate insulating layer made of silicon nitride (SiNx), silicon dioxide (SiO ₂ ), or the like may be formed over the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A passivation layer may be formed on the substrate 110 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

As shown in FIG. 3A, a pixel electrode 120 and a connecting electrode (not shown) may be formed on the substrate 110 having the passivation layer. They may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 120, which is an anode, is electrically connected to the second drain electrode through the second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A partition (not shown) may be formed on the substrate 110 on which the pixel electrode 120 is formed. At this time, the barrier ribs may surround the edges of the pixel electrode 120 to define openings, such as a bank, and may be formed of an organic insulating material or an inorganic insulating material.

An organic compound layer may be formed on the substrate 110.

At this time, the organic compound layer may have a multi-layer structure including an auxiliary layer for improving light emission efficiency of the light emitting layer in addition to the light emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

The organic compound layer may be formed through a photolithography process and a lift-off process. For this purpose, as shown in FIG. 3B, a first organic layer 151 is deposited on the substrate 110.

Here, the hole injection layer and the hole transport layer may be formed on the substrate 110, and the first organic layer 151 may be deposited. The first organic layer 151 may be formed of a red, green, To be deposited.

The hole injection layer facilitates injection of holes from the pixel electrode 120, and the hole transport layer transports holes to the light emitting layer.

3C, a first photosensitive resin layer 191 is formed on the entire surface of the substrate 110 on which the first organic layer 151 is deposited by applying a photoresist.

Then, ultraviolet rays are selectively exposed to the first photosensitive resin layer 191 through a predetermined mask (not shown).

After that, the first photosensitive resin layer 191 exposed through the mask is developed. As shown in FIG. 3D, only the first photosensitive resin layer made of the photosensitive resin The pattern 190a remains.

A photosensitive resin developing solution is used for the above development, and is not particularly limited as long as it does not dissolve the material constituting the light emitting layer. For example, an organic alkali developing solution generally used can be used, but an aqueous solution capable of developing an inorganic alkali or a resist can be used.

Next, as shown in FIG. 3E, using the first photosensitive resin pattern 190a formed as described above as a mask, selectively etching a portion of the first organic film formed under the first photosensitive resin pattern 190a, A first light emitting layer 150a made of the first organic layer is formed on the first light emitting layer 110 (first photo process).

For example, the first light emitting layer 150a may be a red light emitting layer, and the etch may include dry etching as well as wet etching. However, the present invention is not limited thereto, and the first light emitting layer 150a may be a green or blue light emitting layer.

Then, as shown in FIG. 3F, the second organic film 152 is deposited on the first photosensitive resin pattern 190a.

3G, the second organic layer 152 is formed on the entire surface of the substrate 110. The first organic layer 152 is formed on the entire surface of the substrate 110, And the second photosensitive resin layer 192 is formed by applying a resin.

Then, the second photosensitive resin layer 192 is selectively irradiated with ultraviolet rays through a predetermined mask (not shown).

After the second photosensitive resin layer 192 exposed through the mask is developed, a second photosensitive resin pattern 190b made of the photosensitive resin is formed only at a position where the second light emitting layer is formed, as shown in FIG. ).

Next, as shown in FIG. 3 (i), if the second photosensitive resin pattern 190b formed as described above is used as a mask to selectively etch a portion of the second organic film formed below the second photosensitive resin pattern 190b, A second light emitting layer 150b made of the second organic film is formed (a second photolithography process).

In this case, the second light emitting layer 150b may be a green light emitting layer, and the etch may include not only dry etching but also wet etching. However, the present invention is not limited thereto. If the first light emitting layer 150a is a red light emitting layer, the second light emitting layer 150b may be a blue light emitting layer in addition to the green light emitting layer.

Then, as shown in FIG. 3J, the third organic film 153 is deposited on the first photosensitive resin pattern 190a and the second photosensitive resin pattern 190b.

The subsequent process uses a lift-off process, not a photo process such as the first and second photo processes described above. That is, as shown in FIG. 3K, the first photosensitive resin pattern and the second photosensitive resin pattern are removed through a lift-off process. At this time, the first light emitting layer 150a and the second light emitting layer 150b The remaining third organic film is removed together with the first photosensitive resin pattern and the second photosensitive resin pattern.

As a result, a third light emitting layer 150c made of the third organic layer is formed between the first light emitting layer 150a and the second light emitting layer 150b.

In this case, for example, when the first light emitting layer 150a is a red light emitting layer and the second light emitting layer 150b is a green light emitting layer, the third light emitting layer 150c may be a blue light emitting layer. In addition, when the first light emitting layer 150a is a red light emitting layer and the second light emitting layer 150b is a blue light emitting layer, the third light emitting layer 150c may be a green light emitting layer. The first light emitting layer 150a, the second light emitting layer 150b, and the third light emitting layer 150c may be composed of red, green, and blue light emitting layers regardless of the order of the first light emitting layer 150a, the second light emitting layer 150b, and the third light emitting layer 150c .

Next, as shown in FIG. 31, a common electrode 180, which is a cathode, may be formed on the first, second, and third light emitting layers 150a, 150b, and 150c. The common electrode 180 may be a transparent conductive material such as ITO or IZO or a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum Lt; / RTI >

At this time, the common electrode 180 may be formed after the electron transport layer and the electron injection layer are formed on the substrate 110.

The electron injection layer facilitates injection of electrons from the common electrode 180, and the electron transport layer serves to move electrons to the light emitting layers 150a, 150b, and 150c.

As described above, in the case of the first embodiment of the present invention, a single photolithography process, that is, a single application of the photosensitive resin, exposure, development, and etching (four processes in total) can be omitted. In addition, OLED pixels are patterned through a photolithography process to cope with a large-area patterning and a high definition, while providing a solution process effect.

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second source electrode coupled to the first drain electrode, a second source electrode coupled to the driving voltage line, and a second drain electrode coupled to the pixel electrode 120 are coupled together with a second active layer A driving TFT can be constituted.

The pixel electrode 120 and the light emitting layers 150a, 150b and 150c and the common electrode 180 constitute an organic light emitting diode. The sustain electrode and the driving voltage line, which are overlapped with each other, constitute a storage capacitor .

However, when the organic compound layer is patterned through the photolithography process as described above, there is a possibility that the organic compound layer is damaged by the photosensitive resin, the developer, and the strip solution, thereby causing the efficiency and the life .

In the second and third embodiments of the present invention, a buffer layer of a metal oxide is formed on the organic compound layer to protect the organic compound layer by the photo process, which will be described in detail with reference to the drawings .

4A to 4H are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

Although not shown in the drawing, the organic light emitting diode display device according to the second embodiment of the present invention includes a gate line including a first gate electrode on a substrate 210 made of an insulating material such as transparent glass or plastic, A sustain electrode including a second gate electrode may be formed.

A gate insulating layer made of silicon nitride, silicon dioxide, or the like may be formed on the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A predetermined protective layer may be formed on the substrate 210 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

4A, a pixel electrode 220 and a connection electrode (not shown) may be formed on the substrate 210 on which the passivation layer is formed. They may be made of a transparent conductive material such as indium-tin-oxide or indium-zinc-oxide, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 220, which is an anode, is electrically connected to the second drain electrode through a second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A barrier rib (not shown) may be formed on the substrate 210 on which the pixel electrode 220 is formed. At this time, the barrier ribs surround the edges of the pixel electrode 220 to define openings, and may be made of an organic insulating material or an inorganic insulating material.

An organic compound layer may be formed on the substrate 210.

At this time, the organic compound layer may have a multi-layer structure including a light-emitting layer and a sub-layer for improving the light-emitting efficiency of the light-emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

4A, a thin film 231 for a first hole injection layer, a thin film 241 for a first hole transporting layer, a first organic layer 251 ), A first electron transporting layer thin film 261, and a first buffer layer thin film 271 are sequentially deposited.

In this case, the first electron transport layer thin film 261 may include a first electron injection layer thin film, and the first buffer layer thin film 271 may include a metal oxide of Group 1-2, Group 12-16, Group 12 transition metal oxide.

4B, the first hole injection layer thin film 231, the first hole transporting layer thin film 241, the first organic film 251, the first electron transporting layer thin film 261, A first photosensitive resin layer 291 is formed by coating a photosensitive resin on the entire surface of the substrate 210 on which the thin film for buffer layer 1 27 is deposited.

Then, the first photosensitive resin layer 291 is selectively irradiated with ultraviolet rays through a predetermined mask (not shown).

After the first photosensitive resin layer 291 exposed through the mask is developed, a first photosensitive resin pattern 290a made of the photosensitive resin is formed only at a position where the first light emitting layer is formed, as shown in FIG. 4C ).

Next, as shown in FIG. 4D, using the first photosensitive resin pattern 290a formed as described above as a mask, a thin film for a first hole injection layer, a thin film for a first hole transporting layer, The thin film for the first electron transport layer, and the thin film for the first buffer layer are selectively etched, the thin film for the first hole injection layer, the thin film for the first hole transport layer, the first organic film, The first hole injection layer 230a, the first hole transport layer 240a, the first light emitting layer 250a, the first electron transport layer 260a, and the first buffer layer (first buffer layer) 230a, each of the first electron transport layer thin film and the first buffer layer thin film, 270a are formed (first photo step).

As described above, since the first buffer layer 270a is disposed on the organic compound layer, that is, the first electron transport layer 260a, the organic compound layer, particularly the first electron transport layer 260a, Deterioration is prevented.

In addition, by applying the first buffer layer 270a of metal oxide, an energy barrier between the first electron transport layer 260a and the common electrode can be lowered, thereby improving efficiency and lifetime.

For example, the first light emitting layer 250a may be a red light emitting layer, and the etch may include wet etching as well as dry etching. However, the present invention is not limited thereto, and the first light emitting layer 250a may be a green or blue light emitting layer.

Thereafter, as shown in FIG. 4E, the first photosensitive resin pattern is removed.

Next, as shown in FIG. 4F, a thin film for the second hole injection layer, a thin film for the second hole transporting layer, and a thin film for the second hole injection layer are formed on the substrate 210 through a second photo process substantially the same as the above- A second hole transporting layer 240b, a second light emitting layer 250b, a second electron transporting layer 260b, and a second electron transporting layer 260b made of a thin film for an organic layer, a second electron transporting layer and a thin film for a second buffer layer, 2 buffer layer 270b.

In this case, the second light emitting layer 250b may be a green light emitting layer. However, the present invention is not limited thereto. If the first light emitting layer 250a is a red light emitting layer, the second light emitting layer 250b may be a blue light emitting layer in addition to a green light emitting layer.

Next, as shown in FIG. 4G, a third hole injection layer thin film, a third hole injection layer thin film, and a second hole injection layer thin film are formed on the substrate 210 through a third photo process substantially the same as the first and second photo processes described above A third hole transporting layer 240c, a third light emitting layer 250c, and a third electron transporting layer 260c, which are made of a third organic layer, a third electron transporting layer thin film and a third buffer layer thin film, And a third buffer layer 270c are formed.

In this case, for example, when the first light emitting layer 250a is a red light emitting layer and the second light emitting layer 250b is a green light emitting layer, the third light emitting layer 250c may be a blue light emitting layer. When the first light emitting layer 250a is a red light emitting layer and the second light emitting layer 250b is a blue light emitting layer, the third light emitting layer 250c may be a green light emitting layer. However, the present invention is not limited thereto, and the first, second, and third light emitting layers 250a, 250b, and 250c may be formed of red, green, and blue light emitting layers regardless of their order .

Next, common electrodes 280a, 280b and 280c, which are cathodes, may be formed on the first buffer layer 270a, the second buffer layer 270b and the third buffer layer 270c, as shown in FIG. 4H. The common electrodes 280a, 280b and 280c may be formed of a reflective conductive material including calcium, barium, magnesium, aluminum, and silver or a transparent conductive material such as ITO or IZO.

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second source electrode coupled to the first drain electrode, a second source electrode coupled to the driving voltage line, and a second drain electrode coupled to the pixel electrode 220 are coupled together with a second active layer A driving TFT can be constituted.

The pixel electrodes 220 and the light emitting layers 250a, 250b and 250c and the common electrodes 280a, 280b and 280c constitute organic light emitting diodes. The sustain electrodes and the driving voltage lines, which are overlapped with each other, ).

5A to 5G are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a third embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

Although not shown in the drawing, the organic light emitting diode display device according to the third embodiment of the present invention includes a gate line including a first gate electrode on a substrate 310 made of an insulating material such as transparent glass or plastic, A sustain electrode including a second gate electrode may be formed.

A gate insulating layer made of silicon nitride, silicon dioxide, or the like may be formed on the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A predetermined protective film may be formed on the substrate 310 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

5A, a pixel electrode 320 and a connection electrode (not shown) may be formed on the substrate 310 on which the passivation layer is formed. They may be made of a transparent conductive material such as indium-tin-oxide or indium-zinc-oxide, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 320 as an anode is electrically connected to the second drain electrode through a second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A barrier rib (not shown) may be formed on the substrate 310 on which the pixel electrode 320 is formed. At this time, the barrier ribs surround the edges of the pixel electrode 320 to define openings, and may be made of an organic insulating material or an inorganic insulating material.

An organic compound layer may be formed on the substrate 310. In the case of the third embodiment of the present invention, unlike the second embodiment of the present invention, the organic compound layer is formed through a lift-off process .

5A, a photosensitive resin is coated on the entire surface of the substrate 310 on which the pixel electrode 320 is formed to form a first photosensitive resin layer 391. [

Then, the first photosensitive resin layer 391 is selectively irradiated with ultraviolet rays through a predetermined mask (not shown).

5B, after the first photosensitive resin layer 391 exposed through the mask is developed, only the first photosensitive resin made of the photosensitive resin is exposed at positions other than the positions where the first light emitting layer is formed, Pattern 390a remains.

5C, the first thin film 331 for a first hole injection layer, the thin film for a first hole transport layer 341, the first organic layer 331, The first electron transport layer thin film 361 and the first buffer layer thin film 371 are deposited.

Here, the first electron transport layer thin film 361 may include a first electron injection layer thin film, and the first buffer layer thin film 371 may include a metal oxide of Group 1-2, Group 12-16, Group 12 transition metal oxide.

Thereafter, as shown in FIG. 5D, the first photosensitive resin pattern is removed through a first lift-off process. At this time, the thin film for the first hole injection layer, the first hole The thin film for the transport layer, the first organic film, the thin film for the first electron transporting layer and the thin film for the first buffer layer are removed together with the first photosensitive resin pattern.

As a result, on the substrate 310, a first hole injection layer 330a made of the thin film for the first hole injection layer, the first hole transporting layer thin film, the first organic film, the first electron transporting layer thin film, A first hole transport layer 340a, a first emission layer 350a, a first electron transport layer 360a, and a first buffer layer 370a are formed.

In this case, the first light emitting layer 350a may be a red light emitting layer. However, the present invention is not limited thereto, and the first light emitting layer 350a may be a green or blue light emitting layer.

Next, as shown in FIG. 5E, a second lift-off process substantially the same as the first lift-off process described above is performed to form a thin film for the second hole injection layer, a thin film for the second hole transport layer A second hole injection layer 330b, a second hole transport layer 340b, a second emission layer 350b, and a second electron transport layer (not shown) made of a thin film, a second organic film, a thin film for the second electron transport layer, 360b and a second buffer layer 370b.

In this case, the second light emitting layer 350b may be a green light emitting layer. However, the present invention is not limited thereto. If the first light emitting layer 350a is a red light emitting layer, the second light emitting layer 350b may be a blue light emitting layer in addition to a green light emitting layer.

Next, as shown in FIG. 5F, a third lift-off process is performed, and a third lift-off process is performed. Subsequently, a third lift-off process is performed on the substrate 310, The third hole injection layer 330c, the third hole transport layer 340c, the third emission layer 350c, the third hole injection layer 330c, the third hole transport layer 340b, the third hole transport layer 340c, An electron transporting layer 360c and a third buffer layer 370c are formed.

In this case, for example, when the first light emitting layer 350a is a red light emitting layer and the second light emitting layer 350b is a green light emitting layer, the third light emitting layer 350c may be a blue light emitting layer. In addition, when the first light emitting layer 350a is a red light emitting layer and the second light emitting layer 350b is a blue light emitting layer, the third light emitting layer 350c may be a green light emitting layer. However, the present invention is not limited thereto, and the first, second, and third light emitting layers 350a, 350b, and 350c may be formed of red, green, and blue light emitting layers regardless of their order .

5G, common electrodes 380a, 380b, and 380c may be formed on the first, second, and third light emitting layers 350a, 350b, and 350c. The common electrodes 380a, 380b, and 380c may be formed of a reflective conductive material including calcium, barium, magnesium, aluminum, and silver or a transparent conductive material such as ITO or IZO.

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second gate electrode coupled to the first drain electrode, a second source electrode coupled to the driving voltage line, and a second drain electrode coupled to the pixel electrode 320 are coupled together with a second active layer A driving TFT can be constituted.

The pixel electrodes 320 and the emission layers 350a, 350b and 350c and the common electrodes 380a, 380b and 380c constitute organic light emitting diodes. The sustain electrodes and the driving voltage lines, which are overlapped with each other, ).

On the other hand, in the organic compound layer, there are organic substances whose device efficiency and lifetime are drastically reduced after the photolithography process. For example, in some blue light emitting layers, the device efficiency after a photolithography process tends to decrease from about 5.3 cd / A to 2.0 cd / A on a 1000 nit basis.

For example, referring to FIG. 6, there is an organic material whose lifetime rapidly decreases after the photolithography process. In this case, efficiency and lifetime of the organic light emitting diode display device are reduced.

Accordingly, in the case of the fourth embodiment of the present invention, two pixels among red, green and blue pixels are patterned through a lift-off process and the remaining one pixel is formed by patterning without patterning, thereby simplifying the process and increasing the efficiency Which will be described in detail with reference to the drawings.

FIGS. 7A to 7K are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a fourth embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

As described above, the organic light emitting diode display device according to the fourth embodiment of the present invention includes a gate line including a first gate electrode on a substrate 410 made of an insulating material such as transparent glass or plastic, A sustain electrode including a second gate electrode may be formed.

A gate insulating layer made of silicon nitride, silicon dioxide, or the like may be formed on the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A predetermined protective film may be formed on the substrate 410 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

7A, a pixel electrode 420 and a connection electrode (not shown) may be formed on the substrate 410 on which the passivation layer is formed. They may be made of a transparent conductive material such as indium-tin-oxide or indium-zinc-oxide, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 420 as an anode is electrically connected to the second drain electrode through a second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A barrier rib (not shown) may be formed on the substrate 410 on which the pixel electrode 420 is formed. At this time, the barrier ribs may surround the edge of the pixel electrode 420 to define openings, and may be made of an organic insulating material or an inorganic insulating material.

In the fourth embodiment of the present invention, two pixels among red, green, and blue pixels are patterned through a lift-off process, and the remaining pixels are patterned And the organic compound layer is formed by vapor deposition without patterning.

7A, a hole injection layer 430 and a hole transport layer 440 are formed on the substrate 410 on which the pixel electrode 420 is formed.

As described above, the hole injection layer 430 facilitates injection of holes from the pixel electrode 420, and the hole transport layer 440 serves to transfer holes to the light emitting layer.

7B, a photosensitive resin is applied to the entire surface of the substrate 410 on which the hole injection layer 430 and the hole transport layer 440 are formed, thereby forming a first photosensitive resin layer 491. Next, as shown in FIG.

Then, the first photosensitive resin layer 491 is selectively irradiated with ultraviolet rays through a predetermined mask (not shown).

7C, after the first photosensitive resin layer 491 exposed through the mask is developed, only the first photosensitive resin layer 491 made of the photosensitive resin is exposed at positions other than the positions where the first light emitting layer is formed, The pattern 490a remains.

Thereafter, as shown in FIG. 7D, the first organic film 451 is deposited on the first photosensitive resin pattern 490a.

Thereafter, as shown in FIG. 7E, the first photosensitive resin pattern is removed through a first lift-off process. At this time, the first organic film remaining on the first photosensitive resin pattern is removed from the first photosensitive resin pattern .

As a result, the first light emitting layer 450a made of the first organic layer is formed on the substrate 410.

Here, the first light emitting layer 450a may be a red light emitting layer. However, the present invention is not limited thereto, and the first light emitting layer 450a may be a green or blue light emitting layer.

7F, a photosensitive resin is coated on the entire surface of the substrate 410 on which the first light emitting layer 450a is formed to form a second photosensitive resin layer 492. In this case,

Then, the second photosensitive resin layer 492 is selectively irradiated with ultraviolet rays through a predetermined mask (not shown).

7G, after the second photosensitive resin layer 492 exposed through the mask is developed, the second photosensitive resin layer 492 made of the photosensitive resin is exposed only at a position other than the position where the second light emitting layer is formed, The pattern 490b remains.

Then, as shown in FIG. 7H, the second organic film 452 is deposited on the second photosensitive resin pattern 490b.

Thereafter, as shown in FIG. 7I, the second photosensitive resin pattern is removed through a second lift-off process. At this time, a second organic film remaining on the second photosensitive resin pattern is removed from the second photosensitive resin pattern .

As a result, a second light emitting layer 450b of the second organic layer is formed on the substrate 410. [

In this case, the second light emitting layer 450b may be a green light emitting layer. However, the present invention is not limited thereto. When the first light emitting layer 450a is a red light emitting layer, the second light emitting layer 450b may be a blue light emitting layer in addition to a green light emitting layer.

Next, as shown in FIG. 7J, a third organic layer is deposited on the entire surface of the substrate 410 on which the first and second light emitting layers 450a and 450b are formed to form a third light emitting layer 450c.

The third light emitting layer 450c may have a predetermined thickness not only between the first light emitting layer 450a and the second light emitting layer 450b but also over the first light emitting layer 450a and the second light emitting layer 450b .

In this case, for example, when the first light emitting layer 450a is a red light emitting layer and the second light emitting layer 450b is a green light emitting layer, the third light emitting layer 450c may be a blue light emitting layer. In addition, when the first light emitting layer 450a is a red light emitting layer and the second light emitting layer 450b is a blue light emitting layer, the third light emitting layer 450c may be a green light emitting layer. However, the present invention is not limited thereto. The first light emitting layer 450a, the second light emitting layer 450b, and the third light emitting layer 450c may be composed of red, green and blue light emitting layers regardless of their order .

Next, as shown in FIG. 7K, an electron transport layer 460 and a common electrode (cathode), which is a cathode, are formed on the substrate 410 on which the first light emitting layer 450a, the second light emitting layer 450b and the third light emitting layer 450c are formed 480).

At this time, the electron transport layer 460 may include an electron injection layer. The common electrode 480 receives a common voltage and may be formed of a reflective conductive material including calcium, barium, magnesium, aluminum, and silver, or a transparent conductive material such as ITO or IZO.

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second source electrode coupled to the first drain electrode, a second source electrode coupled to the driving voltage line, and a second drain electrode coupled to the pixel electrode 420 are coupled to the second active layer A driving TFT can be constituted.

The pixel electrode 420 and the light emitting layers 450a, 450b and 450c and the common electrode 480 constitute an organic light emitting diode. The sustain electrode and the driving voltage line which are overlapped with each other constitute a storage capacitor .

When the first light emitting layer 450a, the second light emitting layer 450b, and the third light emitting layer 450c are a red light emitting layer, a green light emitting layer, and a blue light emitting layer, the red light emitting layer and the green light emitting layer may be lifted- And the blue light emitting layer may be formed on the entire surface.

However, the present invention is not limited thereto. The green light emitting layer and the blue light emitting layer may be patterned by a lift-off process, the red light emitting layer may be formed on the whole surface, the red light emitting layer and the blue light emitting layer may be patterned by a lift- It can be formed on the whole surface in common.

FIG. 8 is a cross-sectional view showing another example of the organic light emitting diode display device manufactured according to the fourth embodiment of the present invention shown in FIGS. 7A to 7K, wherein a second light emitting layer 450b and a third light emitting layer 450c And a first organic layer is deposited on the entire surface of the substrate 410 to form the first light emitting layer 450a.

The first light emitting layer 450a may have a predetermined thickness not only between the second light emitting layer 450b and the third light emitting layer 450c but also over the second light emitting layer 450b and the third light emitting layer 450c .

9 is a sectional view showing another example of the organic light emitting diode display device manufactured according to the fourth embodiment of the present invention shown in FIGS. 7A to 7K, wherein the first light emitting layer 450a and the third light emitting layer The second light emitting layer 450b is formed by depositing a second organic film on the entire surface of the substrate 410 on which the first light emitting layer 450c is formed.

The second light emitting layer 450b is formed to have a predetermined thickness not only between the first and second light emitting layers 450a and 450c but also over the first and second light emitting layers 450a and 450c .

Meanwhile, it is also possible to prevent the organic compound layer from being damaged by the photolithography process by a method other than the second and third embodiments of the present invention. That is, by patterning the organic compound layer using the cathode as a mask, The compound layer can be protected, which will be described in detail in the following fifth and sixth embodiments of the present invention.

FIGS. 10A to 10H are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a fifth embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

As described above, the organic light emitting diode display device according to the fifth embodiment of the present invention includes a gate line including a first gate electrode on a substrate 510 made of an insulating material such as transparent glass or plastic, A sustain electrode including a second gate electrode may be formed.

A gate insulating layer made of silicon nitride, silicon dioxide, or the like may be formed on the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A predetermined protective film may be formed on the substrate 510 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

As shown in FIG. 10A, a pixel electrode 520 and a connection electrode (not shown) may be formed on the substrate 510 on which the passivation layer is formed. They may be made of a transparent conductive material such as indium-tin-oxide or indium-zinc-oxide, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 520 as an anode is electrically connected to the second drain electrode through a second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A barrier rib (not shown) may be formed on the substrate 510 on which the pixel electrode 520 is formed. At this time, the barrier ribs may be formed as an organic insulating material or an inorganic insulating material by surrounding the periphery of the pixel electrode 520 such that they define openings.

An organic compound layer may be formed on the substrate 510.

At this time, the organic compound layer may have a multi-layer structure including a light-emitting layer and a sub-layer for improving the light-emitting efficiency of the light-emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

10B, a first hole injection layer thin film 531, a first hole transport layer thin film 541, a first organic film 551, and a second organic thin film layer 551 are sequentially formed on a substrate 510 on which the pixel electrode 520 is formed. The first electron transporting layer thin film 561 and the first conductive film 581 are sequentially deposited.

The first conductive layer 581 may include at least one selected from the group consisting of Ca, Ba, Mg, Al, , Silver, or the like, or a transparent conductive material such as ITO or IZO.

10C, the first hole injection layer thin film 531, the first hole transporting layer thin film 541, the first organic film 551, the first electron transporting layer thin film 561, A first photosensitive resin layer 591 is formed by coating a photosensitive resin on the entire surface of the substrate 510 on which the first conductive film 581 is deposited.

Then, the first photosensitive resin layer 591 is selectively irradiated with ultraviolet rays through a predetermined mask (M).

10D, after the first photosensitive resin layer 591 exposed through the mask M is developed, only the first photosensitive resin layer 591 made of the photosensitive resin is exposed at the position where the first light emitting layer is formed, Pattern 590a remains.

In this case, the first photosensitive resin pattern 590a may be patterned so as to have at least the same width with respect to the pixel electrode 520 below the first photosensitive resin pattern 590a in consideration of misalignment of the mask M and other process errors.

Next, as shown in FIG. 10E, using the first photosensitive resin pattern 590a formed as described above as a mask, a part of the first conductive film formed at the lower part thereof is selectively etched, A first common electrode 580a made of the first conductive film is formed.

At this time, the etching may include wet etching as well as dry etching.

Then, as shown in FIG. 10F, the first photosensitive resin pattern remaining through the ashing or strip is removed. At this time, the first common electrode 580a is exposed under the mask using the mask A portion of the thin film for the first hole injection layer, the thin film for the first hole transport layer, the first organic film, and the thin film for the first electron transport layer is selectively removed, A first hole injection layer 530a, a first hole transporting layer 540a, a first light emitting layer 550a, and a first electron transporting layer (not shown) made of a thin film, a thin film for the first hole transporting layer, a first organic film and a first electron transporting layer 560a are formed (first photo process).

As the first common electrode 580a is positioned on the organic compound layer, that is, the barrier layer on the first electron transport layer 560a, the organic compound layer, particularly the first electron transport layer 560a, By preventing deterioration, deterioration of the device can be prevented.

For example, the first light emitting layer 550a may be a red light emitting layer, but the present invention is not limited thereto. The first light emitting layer 550a may be a green or blue light emitting layer.

Next, as shown in FIG. 10G, a thin film for the second hole injection layer, a thin film for the second hole transporting layer, a thin film for the second hole transporting layer, and a thin film for the second hole transporting layer are formed on the substrate 510 through the second photo process substantially the same as the above- A second hole transporting layer 540b, a second light emitting layer 550b, a second electron transporting layer 560b, and a second electron transporting layer 560b, each of which is composed of an organic film, a thin film for the second electron transporting layer and a second conductive film, Thereby forming the common electrode 580b.

At this time, the second conductive layer may be formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver or the like or a transparent conductive material such as ITO or IZO.

In this case, the second light emitting layer 550b may be a green light emitting layer. However, the present invention is not limited thereto. If the first light emitting layer 550a is a red light emitting layer, the second light emitting layer 550b may be a blue light emitting layer in addition to a green light emitting layer.

Next, as shown in FIG. 10H, a third hole injection layer thin film, a third hole transport layer thin film (second hole injection layer thin film), and a second hole injection layer thin film are formed on the substrate 510 through a third photo process substantially the same as the first and second photo processes described above A third hole injection layer 530c, a third hole transport layer 540c, a third emission layer 550c, a third electron transport layer 560c, a third electron transport layer thin film and a third conductive film, And the third common electrode 580c are formed.

The third conductive layer may be formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver or the like or a transparent conductive material such as ITO or IZO.

In this case, for example, when the first light emitting layer 550a is a red light emitting layer and the second light emitting layer 550b is a green light emitting layer, the third light emitting layer 550c may be a blue light emitting layer. In addition, when the first light emitting layer 550a is a red light emitting layer and the second light emitting layer 550b is a blue light emitting layer, the third light emitting layer 550c may be a green light emitting layer. However, the present invention is not limited thereto. The first light emitting layer 550a, the second light emitting layer 550b, and the third light emitting layer 550c may be composed of red, green, and blue light emitting layers regardless of their order .

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second source electrode connected to the first drain electrode, a second source electrode connected to the driving voltage line, and a second drain electrode connected to the pixel electrode 520 are connected to the second active layer A driving TFT can be constituted.

The pixel electrodes 520 and the light emitting layers 550a, 550b and 550c and the common electrodes 580a, 580b and 580c constitute organic light emitting diodes. The sustain electrodes and the driving voltage lines, which are overlapped with each other, ).

In this case, the organic light emitting diode display device according to the fifth embodiment of the present invention has an example in which organic compound layers and common electrodes are patterned with intervals between neighboring pixels, but the present invention is not limited thereto .

11A to 11H are cross-sectional views sequentially illustrating a method of manufacturing an organic light emitting diode display device according to a sixth embodiment of the present invention, and illustrate a method of manufacturing an organic light emitting diode for a part of pixels.

The organic light emitting diode display device according to the sixth embodiment of the present invention is substantially the same as the organic light emitting diode display device according to the fifth embodiment of the present invention except that the organic compound layer and the common electrode are patterned so that neighboring pixels are in contact with each other. And has the same configuration.

Although not shown in the drawing, the organic light emitting diode display device according to the sixth embodiment of the present invention includes a gate line including a first gate electrode on a substrate 610 made of an insulating material such as transparent glass or plastic, A sustain electrode including a second gate electrode may be formed.

A gate insulating layer made of silicon nitride, silicon dioxide, or the like may be formed on the sustain electrode including the gate line including the first gate electrode and the second gate electrode.

A first active layer and a second active layer made of a semiconductor may be formed on the gate insulating layer. The first active layer and the second active layer may be located above the first gate electrode and the second gate electrode, respectively.

A data line, a driving voltage line, a first source / drain electrode, and a second source / drain electrode may be formed on the first active layer and the second active layer.

A predetermined protective film may be formed on the substrate 610 on which the data line, the driving voltage line, the first source / drain electrode, and the second source / drain electrode are formed.

As shown in FIG. 11A, a pixel electrode 620 and a connection electrode (not shown) may be formed on the substrate 610 on which the passivation layer is formed. They may be made of a transparent conductive material such as indium-tin-oxide or indium-zinc-oxide, or a reflective conductive material such as aluminum, silver or an alloy thereof.

At this time, the pixel electrode 620 as an anode is electrically connected to the second drain electrode through the second contact hole, and the connection electrode is electrically connected to the first drain electrode through the first contact hole and the third contact hole. And the second gate electrode can be electrically connected.

A barrier rib (not shown) may be formed on the substrate 610 on which the pixel electrode 620 is formed. At this time, the barrier ribs may surround the edges of the pixel electrode 620 to define openings, such as an organic insulating material or an inorganic insulating material.

An organic compound layer may be formed on the substrate 610.

At this time, the organic compound layer may have a multi-layer structure including a light-emitting layer and a sub-layer for improving the light-emitting efficiency of the light-emitting layer. The sub-layer includes an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes.

11B, a thin film 631 for a first hole injection layer, a thin film 641 for a first hole transporting layer, a first organic film 651, and a second organic thin film 651 are formed on a substrate 610 on which the pixel electrode 620 is formed. The first electron transporting layer thin film 661, and the first conductive film 681 are sequentially deposited.

The first conductive layer 681 may include at least one selected from the group consisting of Ca, Ba, Mg, and Al. The first conductive layer 681 may include a thin film for the first electron injection layer, , Silver, or the like, or a transparent conductive material such as ITO or IZO.

11C, the first hole injection layer thin film 631, the first hole transporting layer thin film 641, the first organic film 651, the first electron transporting layer thin film 661, A first photosensitive resin layer 691 is formed by coating a photosensitive resin on the entire surface of the substrate 610 on which the first conductive film 681 is deposited.

Then, the first photosensitive resin layer 691 is selectively irradiated with ultraviolet rays through a predetermined mask (M).

11D, after the first photosensitive resin layer 691 exposed through the mask M is developed, only the first photosensitive resin layer 691 made of the photosensitive resin is exposed only at the position where the first light emitting layer is formed, Pattern 690a remains.

At this time, the first photosensitive resin pattern 690a may be patterned so that the organic compound layer and the common electrode, which will be described later, are in contact with each other and patterned between neighboring pixels.

Next, as shown in FIG. 11E, using the first photosensitive resin pattern 690a formed as described above as a mask, a part of the first conductive film formed under the first conductive resin film is selectively etched, A first common electrode 680a made of the first conductive film is formed.

At this time, the etching may include wet etching as well as dry etching.

Then, as shown in FIG. 11F, the first photosensitive resin pattern remaining through the ashing or strip is removed. At this time, by using the first common electrode 680a as a mask, the first hole injection The first hole transporting layer thin film, the first organic transporting layer thin film, the first hole transporting layer thin film, the first organic transporting layer thin film, and the first electron transporting layer thin film are selectively removed, A first hole injection layer 630a, a first hole transport layer 640a, a first light emitting layer 650a, and a first electron transport layer 660a formed for the first thin film, the first organic film, and the first electron transport layer are formed (First photo process).

As the first common electrode 680a is positioned on the organic compound layer, that is, the barrier layer on the first electron transport layer 660a, the organic compound layer, particularly the first electron transport layer 660a, By preventing deterioration, deterioration of the device can be prevented.

For example, the first light emitting layer 650a may be a red light emitting layer, but the present invention is not limited thereto. The first light emitting layer 650a may be a green or blue light emitting layer.

Next, as shown in FIG. 11G, a second hole-transporting layer thin film, a second hole transporting layer thin film, a second hole transporting layer thin film, and a second hole transporting thin film are formed on the substrate 610 through a second photolithography process substantially the same as the above- A second hole transporting layer 640b, a second light emitting layer 650b, a second electron transporting layer 660b, and a second electron transporting layer 660b, each of which is composed of an organic film, a thin film for the second electron transporting layer, Thereby forming the common electrode 680b.

At this time, the second conductive layer may be formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver or the like or a transparent conductive material such as ITO or IZO.

In this case, the second light emitting layer 650b may be a green light emitting layer. However, the present invention is not limited thereto. If the first light emitting layer 650a is a red light emitting layer, the second light emitting layer 650b may be a blue light emitting layer in addition to the green light emitting layer.

Next, as shown in FIG. 11H, a third hole injection layer thin film, a third hole injection layer thin film, and a third hole injection layer thin film are formed on the substrate 610 through a third photo process substantially the same as the first and second photo processes described above A third hole injection layer 630c, a third hole transport layer 640c, a third light emitting layer 650c, a third electron transport layer 660c, a third electron transport layer thin film and a third conductive film, And a third common electrode 680c.

The third conductive layer may be formed of a reflective conductive material including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver or the like or a transparent conductive material such as ITO or IZO.

In this case, for example, when the first light emitting layer 650a is a red light emitting layer and the second light emitting layer 650b is a green light emitting layer, the third light emitting layer 650c may be a blue light emitting layer. When the first light emitting layer 650a is a red light emitting layer and the second light emitting layer 650b is a blue light emitting layer, the third light emitting layer 650c may be a green light emitting layer. However, the present invention is not limited thereto, and the first light emitting layer 650a, the second light emitting layer 650b, and the third light emitting layer 650c may be composed of red, green, and blue light emitting layers regardless of their order .

In the organic light emitting diode display device thus constructed, the first gate electrode connected to the gate line, the first source electrode connected to the data line and the first drain electrode are connected to the first thin film transistor switching TFT). A second gate electrode coupled to the first drain electrode, a second source electrode coupled to the driving voltage line, and a second drain electrode coupled to the pixel electrode 620 are coupled together with a second active layer A driving TFT can be constituted.

The pixel electrodes 620 and the light emitting layers 650a, 650b and 650c and the common electrodes 680a, 680b and 680c constitute organic light emitting diodes. The sustain electrodes and the driving voltage lines, which are overlapped with each other, ).

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

110, 210, 410, 410, 510,
120, 220, 220, 420, 520,
150a, 250a, 350a, 450a, 550a, 650a:
150b, 250b, 350b, 450b, 550b, 650b:
150c, 250c, 350c, 450c, 550c, and 650c:
180, 280a to 280c, 380a to 380c, 480, 580a to 580c, 680a to 680c:

Claims (21)

Forming a first electrode on the substrate;
Depositing a first organic layer on the substrate on which the first electrode is formed;
Forming a first photosensitive resin pattern at a position where the first light emitting layer is formed on the substrate on which the first organic film is deposited through a first photolithography process;
Selectively patterning the first organic layer using the first photosensitive resin pattern as a mask to form a first light emitting layer comprising the first organic layer;
Depositing a second organic film on the substrate with the first photosensitive resin pattern remaining;
Forming a second photosensitive resin pattern only at a position where the second light emitting layer is formed on the substrate on which the second organic film is deposited through a second photolithography process;
Selectively patterning the second organic layer using the second photosensitive resin pattern as a mask to form a second light emitting layer comprising the second organic layer;
Depositing a third organic film on the substrate with the first and second photosensitive resin patterns remaining thereon;
Removing the third organic film deposited on the first and second photosensitive resin patterns together with the first and second photosensitive resin patterns through a lift-off process to form the first and second photosensitive resin patterns, Forming a third light emitting layer made of the third organic film on the entire surface between the light emitting layers; And
And forming a second electrode on the first, second, and third light emitting layers. (a) forming a first electrode on a substrate;
(b) forming a first photosensitive resin layer by applying a photosensitive resin to the entire surface of the substrate on which the first electrode is formed;
(c) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position other than a position where the first light emitting layer is formed;
(d) depositing a first organic film on the substrate in a state in which the first photosensitive resin pattern remains;
(e) removing the first organic film deposited on the first photosensitive resin pattern together with the first photosensitive resin pattern through a lift-off process to form a first light emitting layer made of the first organic film on the substrate step;
(f) forming a second light emitting layer made of a second organic film on the substrate through the same steps as the steps (b) to (e);
(g) depositing a third organic layer on the entire surface of the substrate on which the first and second light emitting layers are formed, thereby forming a third light emitting layer composed of the third organic film on the whole between the first light emitting layer and the second light emitting layer; And
(h) forming a second electrode on the substrate. delete [3] The method of claim 2, wherein the third light emitting layer is formed not only between the first light emitting layer and the second light emitting layer, but also on the first light emitting layer and the second light emitting layer. The organic light emitting diode display according to any one of claims 1 and 2, wherein the hole injection layer and the hole transport layer are formed on the substrate on which the first electrode is formed, and then the first light emitting layer is formed thereon / RTI > The organic light emitting diode display device of claim 5, wherein the first light emitting layer is formed of any one of red, green, and blue light emitting layers. 7. The method of claim 6, wherein the second light emitting layer is formed of another light emitting layer of the red, green, and blue light emitting layers. 8. The method of claim 7, wherein the third light emitting layer is formed of the other light emitting layer of the red, green, and blue light emitting layers. The organic light emitting diode display device according to claim 5, wherein the electron transport layer and the electron injection layer are formed on the substrate on which the first, second, and third light emitting layers are formed, and then the second electrode is formed thereon Gt; Forming a first electrode on the substrate;
Forming a first hole injection layer, a first hole transport layer, a first light emitting layer, a first electron transport layer, a first electron injection layer, and a first buffer layer on a substrate having the first electrode formed thereon through a first photo process;
Forming a second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer on the substrate through a second photolithography process; And
Forming a third hole injection layer, a third hole transport layer, a third emission layer, a third electron transport layer, a third electron injection layer, and a third buffer layer on the substrate through a third photo process; And
And forming a second electrode on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide. (a) forming a first electrode on a substrate;
(b) forming a first photosensitive resin layer by applying a photosensitive resin to the entire surface of the substrate on which the first electrode is formed;
(c) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position other than a position where the first light emitting layer is formed;
(d) a thin film for a first hole injection layer, a thin film for a first hole transporting layer, a first organic film, a thin film for a first electron transporting layer, a thin film for a first electron injection layer, and a thin film for a first electron injection layer, 1 < / RTI > buffer layer;
(e) a thin film for a first hole injection layer, a thin film for a first hole transporting layer, a first organic film, a thin film for a first electron transporting layer, and a first electron injection layer deposited on the first photosensitive resin pattern through a lift- The thin film and the thin film for the first buffer layer are removed together with the first photosensitive resin pattern, and the thin film for the first hole injection layer, the thin film for the first hole transporting layer, the first organic film, the thin film for the first electron transporting layer, Forming a first hole injecting layer, a first hole transporting layer, a first emitting layer, a first electron transporting layer, a first electron injecting layer, and a first buffer layer made of a thin film for one electron injecting layer and a thin film for a first buffer layer;
(f) A second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer are formed on the substrate through the same steps as in steps (b) ;
(g) A third hole injection layer, a third hole transport layer, a third light emitting layer, a third electron transport layer, a third electron injection layer, and a third buffer layer are formed on the substrate through the same steps as the steps (b) ; And
(h) forming a second electrode on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide. Gt; The method of claim 10, wherein forming the first hole injection layer, the first hole transport layer, the first emission layer, the first electron transport layer, the first electron injection layer, and the first buffer layer on the substrate comprises:
Depositing a thin film for a first hole injection layer, a thin film for a first hole transporting layer, a first organic film, a thin film for a first electron transporting layer, a thin film for a first electron injection layer, and a thin film for a first buffer layer on the substrate;
A photosensitive resin is applied to the entire surface of the substrate on which the thin film for the first hole injection layer, the thin film for the first hole transporting layer, the first organic film, the thin film for the first electron transporting layer, the thin film for the first electron injection layer, Forming a first photosensitive resin layer;
Exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position where the first light emitting layer is formed; And
The thin film for the first hole injection layer, the thin film for the first hole transporting layer, the first organic film, the thin film for the first electron transporting layer, the thin film for the first electron injection layer and the thin film for the first buffer layer are selectively formed by using the first photosensitive resin pattern as a mask Each of which is made of a thin film for the first hole injection layer, a thin film for the first hole transporting layer, a first organic film, a thin film for the first electron transporting layer, a thin film for the first electron injection layer, and a thin film for the first buffer layer, Forming a first hole injection layer, a first hole transport layer, a first light emitting layer, a first electron transport layer, a first electron injection layer, and a first buffer layer. The method of claim 10, wherein forming the second hole injection layer, the second hole transport layer, the second emission layer, the second electron transport layer, the second electron injection layer, and the second buffer layer on the substrate
Depositing a thin film for the second hole injection layer, a thin film for the second hole transporting layer, a second organic film, a thin film for the second electron transporting layer, a thin film for the second electron injection layer, and a thin film for the second buffer layer on the substrate;
A photosensitive resin is applied to the entire surface of the substrate on which the thin film for the second hole injection layer, the thin film for the second hole transporting layer, the second organic film, the thin film for the second electron transporting layer, the thin film for the second electron injection layer and the thin film for the second buffer layer are deposited Forming a second photosensitive resin layer;
Exposing and developing the second photosensitive resin layer to form a second photosensitive resin pattern made of the photosensitive resin at a position where the second light emitting layer is formed; And
The thin film for the second hole injection layer, the thin film for the second hole transporting layer, the second organic film, the thin film for the second electron transporting layer, the thin film for the second electron injection layer and the thin film for the second buffer layer are selectively formed by using the second photosensitive resin pattern as a mask To form a thin film for the second hole injection layer, a thin film for the second hole transport layer, a second organic film, a thin film for the second electron transport layer, a thin film for the second electron injection layer, and a thin film for the second buffer layer, Forming a second hole injection layer, a second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer. The method of claim 10, wherein forming the third hole injection layer, the third hole transport layer, the third emission layer, the third electron transport layer, the third electron injection layer, and the third buffer layer on the substrate comprises:
Depositing a thin film for the third hole injection layer, a thin film for the third hole transporting layer, a third organic film, a thin film for the third electron transporting layer, a thin film for the third electron injection layer, and a thin film for the third buffer layer on the substrate;
A photosensitive resin is applied to the entire surface of the substrate on which the thin film for the third hole injection layer, the thin film for the third hole transporting layer, the third organic film, the third electron transporting layer thin film, the third electron injection layer thin film and the third buffer layer are deposited Forming a third photosensitive resin layer;
Exposing and developing the third photosensitive resin layer to form a third photosensitive resin pattern made of the photosensitive resin at a position where the third light emitting layer is formed; And
The thin film for the third hole injection layer, the thin film for the third hole transporting layer, the third organic film, the thin film for the third electron transporting layer, the thin film for the third electron injection layer and the thin film for the third buffer layer are selectively formed by using the third photosensitive resin pattern as a mask , A thin film for the third hole injection layer, a thin film for the third hole transporting layer, a third organic film, a thin film for the third electron transporting layer, a thin film for the third electron injection layer, and a thin film for the third buffer layer, A third hole transport layer, a third emission layer, a third electron transport layer, a third electron injection layer, and a third buffer layer on the surface of the organic light emitting diode display device. The method according to any one of claims 10 and 11, wherein the first, second, and third buffer layers are formed of a Group 1-2, Group 12-16 metal oxide, or a Group 3-12 transition metal oxide Wherein the organic light-emitting diode display element is formed on the substrate. (a) forming a fourth electrode on a substrate;
(b) forming a first organic layer and a first conductive layer on the substrate on which the fourth electrode is formed;
(c) forming a first photosensitive resin layer by coating a photosensitive resin on the entire surface of the substrate on which the first conductive film is formed;
(d) selectively exposing and developing the first photosensitive resin layer to form a first photosensitive resin pattern made of the photosensitive resin at a position where the first light emitting layer is formed;
(e) selectively removing the first conductive film using the first photosensitive resin pattern as a mask to form a first electrode;
(f) removing the first photosensitive resin pattern and selectively removing the exposed first organic layer under the first electrode as a mask to form a first light emitting layer composed of the first organic film;
(g) forming a second light emitting layer and a second electrode on the substrate through the same steps as the steps (b) to (f); And
(h) forming a third light emitting layer and a third electrode on the substrate through the same steps as the steps (b) to (f). 17. The method of claim 16, further comprising forming a first hole injection layer thin film and a first hole transport layer thin film on the substrate having the fourth electrode formed thereon, and then forming the first organic film, and forming a first electron transport layer thin film thereon And forming the first conductive layer after the first conductive layer is formed. A first electrode formed on the substrate;
A hole injection layer and a hole transport layer formed on the substrate on which the first electrode is formed;
A first light emitting layer formed of a first organic film on the substrate on which the hole injecting layer and the hole transporting layer are formed;
A second light emitting layer formed of a second organic film on the substrate on which the first light emitting layer is formed;
A third light emitting layer formed by depositing a third organic film on the entire surface of the substrate on which the first light emitting layer and the second light emitting layer are formed; And
An electron injection layer formed on the third light emitting layer, and a second electrode. The organic light emitting diode display device according to claim 18, wherein the third light emitting layer is formed not only between the first light emitting layer and the second light emitting layer, but also on the first light emitting layer and the second light emitting layer. A first electrode formed on the substrate;
A first hole injection layer, a first hole transport layer, a first emission layer, a first electron transport layer, a first electron injection layer, and a first buffer layer stacked in a first emission region on the substrate on which the first electrode is formed;
A second hole transport layer, a second light emitting layer, a second electron transport layer, a second electron injection layer, and a second buffer layer stacked on a second light emitting region on the substrate on which the first electrode is formed;
A third hole transport layer, a third emission layer, a third electron transport layer, a third electron injection layer, and a third buffer layer stacked in a third emission region on the substrate on which the first electrode is formed; And
And a second electrode formed on the first, second, and third buffer layers, wherein the first, second, and third buffer layers are formed of a metal oxide. The organic light emitting diode display device according to claim 20, wherein the first, second, and third buffer layers are made of a Group 1-2, a Group 12-16 metal oxide, or a Group 3-12 transition metal oxide.

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