JP2008085200A - Manufacturing method of organic material equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic material apparatus capable of forming a fine pattern of another material layer on a substrate while restricting or preventing an influence to an organic material layer on the substrate. <P>SOLUTION: The organic semiconductor device comprises: a gate electrode 2; a gate insulating film 3; an organic material layer 4; and electrodes 5, 6. Upon manufacture, a sacrifice layer 8 is formed on the organic material layer 4, and a photoresist 9 is formed on the sacrifice layer 8. Thereafter, it is exposed to light through a predetermined pattern, and the photoresist 9 at an exposed portion is dissolved by an alkali development solution. Then, the entire surface is exposed and, after the electrodes 5, 6 are formed, an unnecessary portion of the electrodes 5, 6 is lifted off by the alkali developing solution together with the photoresist 9 to hereby pattern the electrodes 5, 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic material device having a pattern of another material layer on an organic material layer.

  An organic transistor using an organic semiconductor material for a semiconductor active layer has been proposed. One structure of the organic transistor is a so-called top contact type. A top contact type organic transistor is produced by forming source / drain electrodes on an organic semiconductor layer. More specifically, for example, a gate electrode is formed on a substrate such as a glass substrate, a plastic substrate, or a silicon substrate, and a gate insulating film is formed so as to cover the gate electrode. Further, an organic semiconductor layer is deposited on the gate insulating film, and a metal layer as a source / drain electrode is formed on the organic semiconductor layer.

In general, a vacuum deposition method is applied to the formation of the metal layer. More specifically, a deposition source is disposed in the vacuum chamber, and a substrate on which the gate insulating film and the organic semiconductor layer are formed is disposed to face the deposition source. Further, a shadow mask is disposed between the substrate and the vapor deposition source. In the shadow mask, fine openings corresponding to the pattern of the metal layer (source / drain electrode pattern) to be formed on the organic semiconductor layer are formed. The metal material molecules that evaporate in the vapor deposition source and fly toward the organic semiconductor layer reach the surface of the organic semiconductor layer through the openings of the shadow mask and adhere to form a pattern of the metal layer.
JP 2005-038638 A

However, the above-described method using a shadow mask cannot form a very fine metal layer pattern, and a pattern on the order of several μm is the limit of miniaturization. Therefore, it is not necessarily a suitable method for miniaturization and high integration of elements.
Therefore, it has been proposed to apply ink-jet patterning as a method for miniaturizing the element. However, the metal material that can serve as ink for ink-jet patterning needs to be, for example, nanoparticles. If it is a material other than that, the unevenness | corrugation of a line edge is large and a pattern precision worsens.

  On the other hand, it may be considered to apply a photolithography process to the patterning of the metal film to reduce the pattern. However, the photoresist used in the photolithography process is generally diluted with an organic solvent and applied onto the substrate. However, if a photoresist diluted with an organic solvent is applied on the organic semiconductor layer, the organic solvent may erode the organic semiconductor layer and impair its electrical characteristics.

The above-mentioned problem is not limited to the case where a metal layer is formed, but is a common problem when another material layer (for example, an organic material layer or an insulating film) is patterned after an organic material layer is formed on a substrate. It is.
Accordingly, an object of the present invention is to provide a method for manufacturing an organic material device capable of forming a fine pattern of another material layer on the substrate while suppressing or preventing the influence on the organic material layer on the substrate. It is in.

  In order to achieve the above object, the invention according to claim 1 includes a step of forming a sacrificial layer made of an inorganic material on a first material layer made of an organic material formed on a substrate, A step of forming a resist in a region on the substrate, a selective exposure step of selectively exposing the resist in a predetermined pattern, and a developer composed of an aqueous solution capable of dissolving the sacrificial layer were exposed in the selective exposure step. A developing step for dissolving the resist portion and the sacrificial layer immediately below the resist, a step for forming a second material layer on the substrate after the developing step, and a developer comprising an aqueous solution capable of dissolving the sacrificial layer Then, the resist and the sacrificial layer directly therebelow are dissolved to lift off the second material layer on the resist and pattern the second material layer. Including the door, it is a manufacturing method of an organic material device.

  According to this method, since the resist is formed (coated) in a state where the first material layer is protected by the sacrificial layer made of an inorganic material, the first material layer can be protected from the organic solvent in the resist. That is, the sacrificial layer can avoid contact between the first material layer and the resist. As a result, the second material layer can be formed (patterned) on the substrate while suppressing or preventing the influence on the first material layer. In addition, since the second material layer can be patterned by the photolithography technique, the second material layer having a pattern that is remarkably miniaturized compared to the conventional technique using the shadow mask is formed on the substrate on which the first material layer is formed. Can be formed. Of course, unlike the case of inkjet patterning, there is no strict limitation on the material used for the second material layer.

The developing solution in the developing step and the lift-off step may be the same type or different types. The second material layer may be formed by, for example, a vapor deposition method. The formation pattern of the second material layer may be a pattern having a contact portion with respect to the first material layer, or may be a pattern having no contact portion with the first material layer.
According to a second aspect of the present invention, there is provided an all resist which exposes an unexposed portion of the resist remaining on the substrate after the development step and chemically changes the resist to a property soluble in a developer used in the lift-off step. The method of manufacturing an organic material device according to claim 1, further comprising an exposure step, wherein the step of forming the second material layer is performed after the entire resist exposure step.

  According to this method, an unexposed portion of the resist remaining on the substrate after the development process is exposed, and the entire resist exposure process is performed in which the resist is chemically changed to a property soluble in the developer used in the lift-off process. Is called. Therefore, in the lift-off process, the entire resist on the substrate can be surely dissolved, and unnecessary portions of the second material layer can be precisely lifted off together with the resist.

A third aspect of the present invention is the method for manufacturing an organic material device according to the first or second aspect, wherein the developer used in the developing step and the lift-off step is an alkaline aqueous solution.
Generally, a resist is designed to be soluble in an alkaline aqueous solution, and an alkaline developer is often used in a development process after exposure. Therefore, by using an alkaline aqueous solution in the lift-off process and using a material that is insoluble in the alkaline aqueous solution as the organic material layer, a high selectivity of the resist with respect to the organic material layer can be obtained, and precise lift-off becomes possible.

Invention of Claim 4 is a manufacturing method of the organic material apparatus as described in any one of Claims 1-3 whose said sacrificial layer is a metal layer.
According to this method, a metal layer such as an aluminum layer is formed as the sacrificial layer. In general, metals such as aluminum are soluble in an alkaline aqueous solution. Therefore, for example, when an alkaline aqueous solution is used as the developer in the lift-off process, the sacrificial layer formed on the organic material layer can be easily dissolved and removed together with the resist.

Invention of Claim 5 is a manufacturing method of the organic material apparatus as described in any one of Claims 1-4 whose said 1st material layer is an organic-semiconductor material layer.
According to this method, it is possible to avoid the contact of the resist with the organic semiconductor material layer by the action of the sacrificial layer, so that the influence of the organic solvent in the resist on the organic semiconductor material layer can be suppressed or prevented. Thereby, the 2nd material layer of a fine pattern can be formed on an organic-semiconductor material layer, without impairing the electrical property of an organic-semiconductor material layer. As a result, an organic semiconductor device having excellent electrical characteristics can be realized.

Examples of the organic semiconductor device include an organic transistor using an organic semiconductor layer as a semiconductor active layer, and an organic semiconductor light emitting element that emits light by causing recombination of electrons and holes in the organic semiconductor light emitting layer (organic electroluminescence ( EL) element).
Invention of Claim 6 is a manufacturing method of the organic material apparatus as described in any one of Claims 1-5 in which the said 2nd material layer contains a metal layer.

  According to this method, the second material layer is formed as including a metal layer, for example, a metal electrode. Therefore, for example, a top contact type device in which an electrode is formed on an organic material layer such as an organic semiconductor material layer can be manufactured. In this case, since a metal film having a fine pattern can be formed on the substrate (for example, on the organic material layer) without impairing the electrical characteristics of the organic material layer, the device can be miniaturized and highly integrated.

Invention of Claim 7 is as described in any one of Claims 1-6 in which the said 2nd material layer contains the organic material layer of a different kind from the organic material layer which comprises the said 1st material layer. This is a manufacturing method of the organic material device.
According to this method, the second material layer is formed so as to include an organic material layer of a different type from the organic material layer constituting the first material layer. More specifically, for example, the first material layer is formed of a P-type organic semiconductor material, and the second material layer is formed of an N-type organic semiconductor material. Thereby, both P-type and N-type organic semiconductor material layers can be formed in a fine pattern on the substrate. Therefore, for example, an organic transistor element of P channel type operation and an organic transistor of N channel type operation can be formed on a substrate in a fine pattern, and these can be integrated on the substrate.

Invention of Claim 8 is a manufacturing method of the organic material apparatus as described in any one of Claims 1-7 with which the said 1st material layer has the laminated structure of a some organic material layer.
According to this method, since the first material layer is formed as a laminated structure of a plurality of organic material layers, it can be suitably employed, for example, as a method for manufacturing an organic electroluminescence element.

The invention according to claim 9 is the method for manufacturing an organic material device according to any one of claims 1 to 8, wherein the second material layer has a laminated structure of a plurality of organic material layers.
According to this method, since the second material layer is formed as a stacked structure of a plurality of organic material layers, it can be suitably employed, for example, as a method for manufacturing an organic electroluminescence element. More specifically, for example, it becomes possible to arrange a plurality of minute organic luminescence elements on a substrate at a high density, and a high-definition display device can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing the configuration of an organic material device to which a method according to a first embodiment of the present invention is applied.
This organic material device is an organic transistor 1 having a basic structure as an FET (field effect transistor). The organic transistor 1 includes a gate electrode 2 that also serves as a substrate, a gate insulating film 3 stacked on the gate electrode 2, an organic material layer 4 stacked on the gate insulating film 3, and an organic material layer 4 on the organic material layer 4. And a pair of electrodes 5 and 6 (source / drain electrodes) formed at a predetermined interval (for example, 10 μm). That is, the organic transistor 1 has a so-called top contact type structure in which the electrodes 5 and 6 are disposed on the side opposite to the gate electrode 2 with respect to the organic material layer 4. For example, one of the pair of electrodes 5 and 6 is a carrier injection electrode 5 that injects carriers (electrons or holes) into the organic material layer 4, and the other is a carrier extraction electrode 6 that receives carriers from the organic material layer 4. It is.

  The gate electrode 2 is an electrode composed of an impurity diffusion layer formed by introducing an N-type impurity at a high concentration into the surface layer portion of the silicon substrate. Of course, for example, a plastic substrate may be used, and a metal film such as nickel (Ni) or aluminum (Al) may be formed on the substrate to form the gate electrode 2. The gate electrode 2 is provided on the substrate so as to face the organic material layer 4 through the gate insulating film 3 in at least the interelectrode region 7 between the electrodes 5 and 6.

The gate insulating film 3 is made of, for example, silicon oxide (SiO ₂ ), tantalum pentoxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), and a polymer such as a novolac resin and polyimide.
The organic material layer 4 may be a P-type organic semiconductor layer made of a P-type organic semiconductor material (hole transporting organic material) that can move holes injected from the carrier injection electrode 5. Alternatively, it may be an N-type organic semiconductor layer made of an N-type organic semiconductor material (electron transporting organic material) that can move electrons injected from the carrier injection electrode 5. Moreover, the organic material layer 4 can also be comprised with the bipolar type organic-semiconductor layer which consists of a bipolar-type organic-semiconductor material which can move both a hole and an electron. In this case, the electrodes 5 and 6 are all carrier injection electrodes, one of which is a hole injection electrode for injecting holes into the organic material layer 4 and the other is an electron injection electrode for injecting electrons into the organic material layer 4. Become.

A typical P-type organic semiconductor material is pentacene, and the organic material layer 4 can be composed of a pentacene layer having a layer thickness of 50 nm. In addition, those arbitrarily selected from the following P-type organic semiconductor materials can be used as constituent materials.
Acene materials such as Pentacene, Tetracene, Anthracene. Phthalocyanine materials such as Copper Phthalocyanine. Oligothiophene materials such as α-sexithiophene, α, ω-Dihexyl-sexithiophene, dihexyl-anthradithiophene, Bis (dithienothiophene), α, ω-Dihexyl-quinquethiophene. Polythiophene materials such as poly (3-hexylthiophene) and poly (3-butylthiophene). Other low molecular materials such as oligophenylene, oligophenylenevinylene, TPD, α-NPD, m-MTDATA, TPAC, and TCTA, and polymer materials such as poly (phenylenevinylene), poly (thienylenevinylene), polyacetylene, and poly (vinylcarbazole).

In addition, as the N-type organic semiconductor material, a material arbitrarily selected from the following N-type organic semiconductor materials can be used as a constituent material.
NTCDI materials such as NTCDI, C ₆ -NTC, C ₈ -NTC, F ₁₅ -octyl-NTC, F ₃ -MeBn-NTC. PTCDI materials such as PTCDI, C ₆ -PTC, C ₈ -PTC, C ₁₂ -PTC, C ₁₃ -PTC, Bu-PTC, F ₇ Bu-PTC, Ph-PTC, F ₅ Ph-PTC. In addition, TCNQ, C ₆₀ fullerene, F ₁₆ -CuPc, F ₁₄ -Pentacene, etc.

Furthermore, as bipolar organic semiconductor materials, α-NPD, Alq ₃ (Tris (8-hydroxyquinolinato) alminum (III)), CBP (4,4′-Bis (carbazol-9-y1) biphenyl), BSA— 1 m (9,10-Bis (3-cyanostilil) anthracene), MEHPPV (Poly [2-Methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene]), CN-PPP (Poly [2- (6- cyano-6-methylheptyloxy) -1,4-phenylene]), Bis (2- (2-hydroxyphenyl) -benz-1,3-thiazolato) zinc complex, Poly [(9,9-dihexylfluoren-2,7-diyl ) -co- (anthracen-9,10-diyl)].

In consideration of the organic material applied to the organic material layer 4, a material that can easily exchange carriers with the organic material layer 4 is applied to the electrodes 5 and 6. Specifically, for example, gold (Au), aluminum (Al), magnesium-gold (Mg-Au) alloy, magnesium-silver (Mg-Ag) alloy, aluminum-lithium (Al-Li) alloy, calcium (Ca ), Platinum (Pt), ITO (solid solution of indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ )), etc., can constitute the electrodes 5 and 6.

  When the organic material layer 4 is composed of a P-type organic semiconductor layer (for example, a pentacene layer), when the organic transistor 1 operates as a semiconductor, a voltage at which the carrier injection electrode 5 side is positive is applied between the electrodes 5 and 6. Applied. In this state, when a negative voltage is applied to the gate electrode 2, a channel is formed in the organic material layer 4 between the electrodes 5 and 6. As a result, holes injected from the carrier injection electrode 5 are transported through the organic material layer 4 to the carrier extraction electrode 6. Thus, the electrodes 5 and 6 are electrically connected. When the voltage applied to the gate electrode 2 is removed, the channel in the organic material layer 4 disappears and the electrodes 5 and 6 are blocked. The current between the electrodes 5 and 6 changes depending on the voltage applied to the gate electrode 2. In this way, transistor operation is performed.

2A to 2G are schematic cross-sectional views illustrating the method of manufacturing the organic transistor of FIG. 1 in the order of steps. First, as shown in FIG. 2A, a gate insulating film 3 is formed on a gate electrode 2 that also serves as a substrate, an organic material layer 4 (first material layer) is formed on the gate insulating film 3, and A sacrificial layer 8 is laminated on the organic material layer 4.
The sacrificial layer 8 is an inorganic material that is chemically stable with respect to the photoresist 9 described later. For example, the sacrificial layer 8 is a periodic table (such as aluminum (Al), gallium (Ga), indium (In), thallium (Tl)). IUPAC, 1990) Metal materials belonging to Group IIIB, aluminum-tantalum (Al-Ta) alloys, and the like. In general, since metals such as aluminum are soluble in an alkaline aqueous solution, if the sacrificial layer 8 is such a metal, the sacrificial layer 8 can be easily dissolved and removed together with the photoresist 9 at the time of lift-off described later. The sacrificial layer 8 can be prevented from remaining in the organic material layer 4.

  Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 2B. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4. As the photoresist 9, a material that chemically changes to a property that is soluble in an alkali developer by being exposed to ultraviolet light is used.

  Next, after performing an appropriate baking process with respect to the photoresist 9, as shown to FIG. 2C, the photomask 10A is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, the photomask 10A is formed with openings 10a and 10b having shapes corresponding to the electrodes 5 and 6, respectively, and the photoresist 9 in regions corresponding to the openings 10a and 10b is selectively exposed to ultraviolet rays. (Selective exposure step). As a result, the portions of the photoresist 9 corresponding to the openings 10a and 10b are chemically changed to a property soluble in an alkaline developer.

Next, as shown in FIG. 2D, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), whereby the organic material layer 4 in the region where the electrodes 5 and 6 are to be formed. Is exposed (development process).
Next, as shown in FIG. 2E, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

Next, as shown in FIG. 2F, electrodes 5 and 6 (second material layers), which are metal layers, are vapor-deposited on the entire surface. Furthermore, as shown in FIG. Dissolved. Thereby, unnecessary portions of the electrodes 5 and 6 are lifted off together with the photoresist 9 (lift-off process), and the organic transistor 1 is completed.
In this way, the action of the sacrificial layer 8 can avoid contact of the photoresist 9 diluted with an organic solvent with the organic material layer 4, so that the influence on the organic material layer 4 is suppressed or prevented, that is, organic A fine pattern of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the material layer 4. Further, by using an alkaline aqueous solution at the time of lift-off, the selectivity of the photoresist 9 with respect to the organic material layer 4 can be increased, and precise lift-off can be achieved.

FIG. 3 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the second embodiment of the present invention is applied.
This organic material device is an organic transistor integrated circuit element 29 in which a plurality (for example, two) of organic transistors 12P and 12N are formed on a substrate 11 (for example, a glass substrate, a silicon substrate, or a plastic substrate).

  Each of the organic transistors 12P and 12N includes gate electrodes 13 and 14 formed on the substrate 11, a gate insulating film 15 stacked on the gate electrodes 13 and 14, and a predetermined interval (for example, on the gate insulating film 15). And electrodes 16P, 17, and 16N formed with a space of 10 μm), and organic semiconductor layers 18 and 19 that are formed on these electrodes 16P, 17, and 16N, and are disposed to face the gate electrodes 13 and 14, respectively. Yes. That is, the organic transistor integrated circuit element 29 has a so-called bottom contact type structure in which the electrodes 16P, 17, and 16N are disposed on the same side as the gate electrodes 13 and 14 with respect to the organic semiconductor layers 18 and 19. ing. The electrode 17 is shared by the pair of organic transistors 12P and 12N and connects them to each other.

  One organic semiconductor layer 18 is a P-type organic semiconductor layer (first material layer), and the other organic semiconductor layer 19 is an N-type organic semiconductor layer (second material layer). That is, in this embodiment, a circuit having a complementary metal oxide semiconductor (CMOS) structure can be formed on the substrate 11. The P-type organic semiconductor layer 18 can be composed of the aforementioned P-type organic semiconductor material, and similarly, the N-type organic semiconductor layer 19 can be composed of the aforementioned N-type organic semiconductor material.

Examples of the material of the gate electrodes 13 and 14 include the same material as that of the gate electrode 2 in the first embodiment described above.
Similarly, the gate insulating film 15 can be made of the same material as the gate insulating film 3 in the first embodiment.
The electrode 16P is a hole injection electrode that injects holes into the P-type organic semiconductor layer 18, and the electrode 16N is an electron injection electrode that injects electrons into the N-type organic semiconductor layer 19. Examples of the material of the electrodes 16P, 17, and 16N include the same materials as those of the electrodes 5 and 6 in the first embodiment described above.

The P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19 are made of different types of organic materials.
In this organic transistor integrated circuit element 29, adjacent P-type organic semiconductor layers 18 and N-type organic semiconductor layers 19 are spaced from each other for the purpose of element isolation for electrically separating the individual organic transistors 12P and 12N. D is opened and separated. The distance D is, for example, on the order of 1 micrometer, and the sub-micron rule organic transistor integrated circuit element 29 is thereby configured.

4A to 4F and FIGS. 5G to 5L are schematic cross-sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps. In FIGS. 4 and 5, the portions corresponding to the respective portions shown in FIG. 2 are given the same reference numerals as those in FIG.
First, as shown in FIG. 4A, the substrate on which the gate electrodes 13 and 14, the gate insulating film 15, and the electrodes 16P, 17, and 16N are formed (the gate electrodes 13 and 14 are formed by patterning by photolithography, for example). A photoresist 20 is applied to the entire surface of 11 (precisely, the surfaces of the gate insulating film 15 and the electrodes 16P, 17, 16N), and an appropriate baking process is performed. A photomask 10B is disposed above the substrate 11 in this state, and the photoresist 20 is selectively exposed. That is, an opening 10c having a shape corresponding to the P-type organic semiconductor layer 18 is formed in the photomask 10B, and the photoresist 20 in a region corresponding to the opening 10c is selectively exposed to ultraviolet rays.

  Next, as shown in FIG. 4B, the photoresist 20 is developed using an alkaline developer, so that each of the electrodes 16P and 17 is exposed. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the P-type organic semiconductor layer 18 to be formed. Thereafter, as a surface treatment for enhancing the adhesion between the P-type organic semiconductor layer 18 to be formed next and the gate insulating film 15, HMDS treatment is performed. Further, the P-type organic semiconductor layer 18 and the electrodes 16P, In order to reinforce the adhesion with 17 (for example, made of Au), a surface treatment using a thiol compound is performed.

Next, as shown in FIG. 4C, the entire surface is exposed to ultraviolet rays, and all the photoresists 20 on the substrate 11 are exposed to ultraviolet rays.
Next, as shown in FIG. 4D, a P-type organic semiconductor layer 18 is deposited on the entire surface, and further, as shown in FIG. 4E, the photoresist 20 is dissolved using an alkali developer. Thereby, the unnecessary part of the P-type organic semiconductor layer 18 is lifted off. Since the photoresist 20 has been previously exposed to ultraviolet rays in the step of FIG. 4C, it is easily dissolved in an alkali developer and removed with a high selectivity with respect to the P-type organic semiconductor layer 18. In addition, since the HMDS treatment and the surface treatment with the thiol compound are performed before the P-type organic semiconductor layer 18 is formed, the bond between the P-type organic semiconductor layer 18 and the gate insulating film 15 and the electrodes 16P and 17 is strong even during lift-off. Retained. Thus, the P-type organic semiconductor layer 18 in contact with the electrodes 16P and 17 can be formed in a region extending between the electrodes 16P and 17 of the organic transistor 12P.

Next, as shown in FIG. 4F, a sacrificial layer 8 is formed on the entire surface including the P-type organic semiconductor layer 18.
Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 5G. At this time, since the P-type organic semiconductor layer 18 is protected by the sacrificial layer 8, contact between the P-type organic semiconductor layer 18 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the P-type organic semiconductor layer 18.

  Next, as shown in FIG. 5H, a photomask 10C is disposed above the substrate in this state, and the photoresist 9 is selectively exposed. That is, an opening 10d having a shape corresponding to the N-type organic semiconductor layer 19 is formed in the photomask 10C, and the photoresist 9 in a region corresponding to the opening 10d is selectively exposed to ultraviolet rays (selective exposure step). ). Thereby, the part corresponding to the opening 10d of the photoresist 9 is chemically changed to a property soluble in the alkaline developer.

Next, as shown in FIG. 5I, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), thereby forming the electrode 16N in the region where the N-type organic semiconductor layer 19 is to be formed. , 17 are exposed (development process).
Next, as shown in FIG. 5J, the entire surface is exposed to ultraviolet rays, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

  Next, as shown in FIG. 5K, an N-type organic semiconductor layer 19 is deposited on the entire surface. Further, as shown in FIG. 5L, the photoresist 9 is dissolved using an alkali developer. Thereby, an unnecessary portion of the N-type organic semiconductor layer 19 is lifted off together with the photoresist 9 (lift-off process), and an organic transistor integrated circuit element 29 in which a plurality of types of organic transistors 12P and 12N are formed on the same substrate is completed. .

  Thus, the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19. While suppressing or preventing the influence on the N-type organic semiconductor layer 19, that is, without impairing the electrical characteristics of the P-type organic semiconductor layer 18 and the N-type organic semiconductor layer 19, the P-type organic semiconductor is formed on the substrate by photolithography. Both the layer 18 and the N-type organic semiconductor layer 19 can be formed in a fine pattern.

FIG. 6 is an illustrative cross-sectional view for explaining the configuration of an organic material device to which the method according to the third embodiment of the present invention is applied.
This organic material device is an RGB light emitting element 30 in which a plurality of colors (for example, three colors) of red organic ELs 22R, 22G, and 22B (referred to collectively as “organic EL22”) are formed on a substrate 21.

The substrate 21 is made of a material having a high light transmittance, such as a glass substrate or a plastic substrate. Thereby, the light generated in the organic EL 22 passes through the substrate 21 and is extracted outside.
The organic EL 22 has different types of luminescent dyes that emit red (R), green (G), and blue (B) colors. Therefore, it cannot be formed at the same time, and is formed separately into a red organic EL 22R, a green organic EL 22G, and a blue organic EL 22B. Each organic EL 22 includes a signal electrode 23 (anode) formed on the substrate 21, a red organic layer 24R, a green organic layer 24G, a blue organic layer 24B (collectively referred to as “organic layer 24”), and electrons. An injection layer 25 and a scanning electrode 26 (cathode) are provided. More specifically, the signal electrodes 23 are separately formed at three positions on the substrate 21 with a space between each other, an organic layer 24 is formed so as to cover each signal electrode 23, and an electron injection layer is formed on each organic layer 24. 25 is formed. The scan electrode 26 is formed so as to cover the upper surface and the side surface of the electron injection layer 25 and the side surface of the organic layer 24, and the scan electrode 26 and the signal electrode 23 are in contact with each other with the organic layer 24 therebetween. It has been avoided.

The signal electrode 23 is an electrode for injecting holes into the organic layer 24. For example, ITO (solid solution of indium oxide (In ₂ O ₃ ) and tin oxide (SnO ₂ )), IZO (indium zinc oxide) Alternatively, it is made of a transparent electrode material such as zinc oxide (ZnO).
The organic layer 24 is a light emitting portion in the organic EL 22, and includes a hole transport layer 241, red, green, and blue light emitting layers 242R, 242G, and 242B (collectively referred to as “light emitting layer 242”), and electron transport. The layer 243 is stacked on the signal electrode 23.

The hole transport layer 241 is a layer for transporting holes injected from the signal electrode 23 to the light emitting layer 242, and is composed of, for example, a diamine-based material such as α-NPD or TPD, or m-TDATA. Is done.
In order to facilitate injection of holes from the signal electrode 23 into the hole transport layer 241, a hole injection layer may be interposed between the hole transport layer 241 and the signal electrode 23. Examples of the material for such a hole injection layer include Copper Phthalocyanine and m-MTDATA (for example, the layer thickness is 1 nm or less).

The light emitting layer 242 receives light from the hole transport layer 241 and receives electrons from the electron transport layer 243 to recombine these holes and electrons to generate light. The red light emitting layer 242R, the green light emitting layer 242G, and the blue light emitting layer 242B are configured to correspond to the organic ELs 22 formed separately.
Each light emitting layer 242 does not need to have a carrier (hole or electron) transport capability, but is made of an organic semiconductor material having a higher emission quantum efficiency than the hole transport layer 241 and the electron transport layer 243. It is preferable that the metal complex material such as Alq ₃ is doped with a fluorescent dye. For example, as the red light emitting layer 242R, Alq ₃ doped with DCM, for example, the green light emitting layer 242G, Alq ₃ doped with Coumaline (coumarin), for example, the blue light emitting layer 242B, Examples include Alq ₃ doped with Perylene.

Electron transporting layer 243 is a layer for transporting electrons from the scanning electrode 26 is injected through the electron injection layer 25, for example, made of a metal complex-based material such as Alq _3.
The electron injection layer 25 is a layer that acts to relax the energy barrier between the scan electrode 26 and the electron transport layer 243, and the electron injection layer 25 is interposed between the scan electrode 26 and the electron transport layer 243. Electrons can be easily injected into the electron transport layer 243. The material of the electron injection layer 25 is a layer in which an electron transporting organic semiconductor such as Alq ₃ or Bathophanthroline is doped with an alkali metal such as lithium (Li) or cesium (Cs), or an alkali such as lithium fluoride (LiF). Examples thereof include metal / alkaline earth metal fluorides, germanium oxide (GeO ₂ ), and aluminum oxide (Al ₂ O ₃ ).

The scan electrode 26 is an electrode for injecting electrons into the electron transport layer 243 through the electron injection layer 25, and has a high conductivity and easily injects electrons into the electron transport layer 243, for example, aluminum ( Al), calcium (Ca) magnesium-aluminum (Mg-Al) alloy, aluminum-lithium (Al-Li) alloy, and the like.
During the light emitting operation, for example, a positive voltage is applied to the signal electrode 23 and holes are injected into the hole transport layer 241. On the other hand, a negative voltage is applied to the scan electrode 26, and electrons are injected into the electron transport layer 243 through the electron injection layer 25. Then, these electrons and holes are transported through the respective layers and recombine in the organic material layer 4 to emit light. The emitted light passes through the signal electrode 23 and the substrate 21 and is extracted outside.

A two-dimensional color display device can be configured by arranging a plurality of pixels having the structure shown in FIG. 6 on the substrate 21 in a matrix.
FIGS. 7A to 7E, FIGS. 8F to 8I, FIGS. 9J to 9M, FIGS. 10N to 10Q, and FIGS. 11R to 11U are schematic cross-sectional views illustrating the method of manufacturing the RGB light emitting device of FIG. 7 to 11, portions corresponding to the respective portions shown in FIGS. 2, 4, and 5 described above are denoted by the same reference numerals as those in FIGS. 2, 4, and 5.

  First, as shown in FIG. 7A, the surface of the substrate 21 on which the signal electrodes 23 are formed at a predetermined interval (for example, formed by patterning by photolithography) (more precisely, the surfaces of the substrate 21 and the signal electrode 23). ) Is applied to the entire surface, and an appropriate baking process is performed. A photomask 10D is disposed above the substrate 21 in this state, and the photoresist 20 is selectively exposed. That is, the opening 10e having a shape corresponding to the red organic EL 22R is formed in the photomask 10D, and the photoresist 20 in the region corresponding to the opening 10e is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 7B, the signal electrode 23 corresponding to the red organic EL 22R is exposed by developing the photoresist 20 using an alkali developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the red organic EL 22R to be formed.
Next, as shown in FIG. 7C, the entire surface is exposed to ultraviolet rays, and all of the photoresist 20 on the substrate 21 is exposed to ultraviolet rays.

  Next, as shown in FIG. 7D, a hole transport layer 241, a red light emitting layer 242R, and an electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source, and the red organic layer 24R ( The first material layer is formed to have a laminated structure. Further, as shown in FIG. 7E, the photoresist 20 is dissolved using an alkaline developer. Thereby, an unnecessary portion of the red organic layer 24R is lifted off.

Next, as shown in FIG. 8F, the sacrificial layer 8 is formed on the entire surface of the substrate 21 and the red organic layer 24R.
Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. 8G. At this time, since the red organic layer 24R is protected by the sacrificial layer 8, contact between the red organic layer 24R and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the red organic layer 24R.

  Next, after performing an appropriate baking process with respect to the photoresist 9, as shown to FIG. 8H, the photomask 10E is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, an opening 10f having a shape corresponding to the green organic layer 24G is formed in the photomask 10E, and the photoresist 9 in a region corresponding to the opening 10f is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 10f is chemically changed to a property soluble in an alkaline developer.

Next, as shown in FIG. 8I, by developing the photoresist 9 using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), the signal electrode 23 in the region where the green organic layer 24G is to be formed is formed. It is exposed (development process).
Next, as shown in FIG. 9J, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

  Next, as shown in FIG. 9K, the hole transport layer 241, the green light emitting layer 242G, and the electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source, and the green organic layer 24G ( The second material layer is formed to have a laminated structure. Further, as shown in FIG. 9L, the photoresist 9 is dissolved using an alkaline developer. Thereby, the unnecessary part of the green organic layer 24G is lifted off.

Thereafter, steps similar to those of FIGS. 8F to 8I and FIGS. 9J to 9L are performed, and as shown in FIG. 9M, a blue organic layer 24B is formed.
Next, as shown in FIG. 10N, the sacrificial layer 8 is formed on the entire surface of the organic layer 24 and the substrate 21. Next, in this state, a photoresist 9 is applied on the sacrificial layer 8 as shown in FIG. At this time, since the organic layer 24 is protected by the sacrificial layer 8, contact between the organic layer 24 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic layer 24.

Next, as shown in FIG. 10P, a photomask 10F is disposed above the substrate 21, and the photoresist 9 is selectively exposed. That is, openings 10g to i having a shape corresponding to the electron injection layer 25 are formed in the photomask 10F, and the photoresist 9 in a region corresponding to the openings 10g to i is selectively exposed to ultraviolet rays.
Next, as shown in FIG. 10Q, the organic layer 24 is exposed by developing the photoresist 9 using an alkaline developer. Thereafter, as shown in FIG. 11R, the entire surface is exposed to ultraviolet rays, and all the photoresists 9 on the substrate 21 are exposed to ultraviolet rays.

Next, as shown in FIG. 11S, an electron injection layer 25 is formed in each organic layer 24, and as shown in FIG. 11T, the photoresist 9 is dissolved using an alkali developer. Thereby, an unnecessary portion of the electron injection layer 25 is lifted off.
Then, as shown in FIG. 11U, the RGB light emitting element 30 in which the scanning electrode 26 is formed and a plurality of organic ELs are formed on the same substrate is completed.

  In this way, the action of the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with each organic layer 24, so that the influence on the organic layer 24 is suppressed or prevented, that is, the organic layer. Each organic layer 24 can be formed into a fine pattern by photolithography without impairing the electrical characteristics of 24. Therefore, a high-definition and high-quality two-dimensional display device can be realized.

FIG. 12 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the fourth embodiment of the present invention is applied. In FIG. 12, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as in FIG.
This organic material device is an organic transistor integrated circuit element 31 in which a plurality of organic transistors 32 (three actually shown in FIG. 12, but actually more) are integrated.

  Each organic transistor 32 has substantially the same configuration as the organic transistor 1 shown in FIG. 1, and the gate electrode 2 is not formed integrally with a substrate 33 (for example, a glass substrate, a silicon substrate, or a plastic substrate). 1 is different from the organic transistor 1 of FIG. Some of the electrodes 6 are shared by a pair of adjacent organic transistors 32, and these are connected to each other.

FIGS. 13A to 13D, FIGS. 14E to 14H, and FIGS. 15I to 15L are schematic cross-sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 13, 14 and 15, parts corresponding to those shown in FIGS. 2, 4 and 5 are denoted by the same reference numerals as in FIGS. 2, 4 and 5.
First, as shown in FIG. 13A, the surface of the substrate 33 on which the gate electrode 2 and the gate insulating film 3 are formed (for example, the gate electrode 2 is formed by patterning by photolithography) (more precisely, the gate insulating film 3). The photoresist 20 is applied to the entire surface of the substrate, and an appropriate baking process is performed. A photomask 10G is disposed above the substrate 33 in this state, and the photoresist 20 is selectively exposed. That is, openings 10j to l having a shape corresponding to the organic material layer 4 are formed in the photomask 10G, and the photoresist 20 in a region corresponding to the openings 10j to l is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 13B, a portion of the gate insulating film 3 is exposed by developing the photoresist 20 using an alkali developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the organic material layer 4 to be formed.
Next, as shown in FIG. 13C, the entire surface is exposed to ultraviolet rays, and all of the photoresist 20 on the substrate 33 is exposed to ultraviolet rays.

Next, as shown in FIG. 13D, an organic material layer 4 (first material layer) is deposited on the entire surface, and as shown in FIG. 14E, the photoresist 20 is dissolved using an alkali developer. Thereby, the unnecessary part of the organic material layer 4 is lifted off.
Next, as shown in FIG. 14F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.
Next, in this state, as shown in FIG. 14G, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

  Next, after performing an appropriate baking process with respect to the photoresist 9, as shown to FIG. 14H, the photomask 10H is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, the openings 10m to q having shapes corresponding to the electrodes 5 and 6 are formed in the photomask 10H, and the photoresist 9 in the region corresponding to the openings 10m to q is selectively exposed to ultraviolet rays. (Selective exposure process). Thereby, the part corresponding to the openings 10m to q of the photoresist 9 is chemically changed to a property soluble in an alkali developer.

Next, as shown in FIG. 15I, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), whereby the organic material layer 4 in the region where the electrodes 5 and 6 are to be formed. Is exposed (development process).
Next, as shown in 15J, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

  Next, as shown in FIG. 15K, electrodes 5 and 6 (second material layers), which are metal layers, are vapor-deposited on the entire surface. Furthermore, as shown in FIG. Dissolved. Thereby, unnecessary portions of the electrodes 5 and 6 are lifted off together with the photoresist 9 (lift-off process), and an organic transistor integrated circuit element 31 in which a plurality of organic transistors 32 are integrated is completed.

  In this way, the action of the sacrificial layer 8 can avoid contact of the photoresist 9 diluted with an organic solvent with the organic material layer 4, so that the influence on the organic material layer 4 is suppressed or prevented, that is, organic A fine pattern of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the material layer 4. Thereby, miniaturization and high integration of the device can be achieved.

FIG. 16 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the fifth embodiment of the present invention is applied. In FIG. 16, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as in FIG.
This organic material device is a top contact type organic transistor 35 in which a plurality of (for example, two) electrodes of different materials are formed in contact with the upper surface of the organic material layer 4.

  The organic transistor 35 has substantially the same configuration as the organic transistor 1 shown in FIG. 1, and the gate electrode 2 is not formed integrally with a substrate 36 (for example, a glass substrate, a silicon substrate, or a plastic substrate). It differs from the organic transistor 1 of FIG. 1 in that it is formed separately and the electrodes 5 and 6 are formed of different materials.

FIGS. 17A to 17F, FIGS. 18G to 18M, and FIGS. 19N to 19S are schematic cross-sectional views illustrating the method of manufacturing the organic transistor of FIG. 16 in the order of steps. 17, 18, and 19, the same reference numerals as those in FIGS. 2, 4, and 5 are assigned to the portions corresponding to those shown in FIGS. 2, 4, and 5. Show.
First, as shown in FIG. 17A, the surface of the substrate 36 on which the gate electrode 2 and the gate insulating film 3 are formed (for example, the gate electrode 2 is formed by patterning by photolithography) (more precisely, the gate insulating film 3). The photoresist 20 is applied to the entire surface of the substrate, and an appropriate baking process is performed. A photomask 10I is disposed above the substrate 36 in this state, and the photoresist 20 is selectively exposed. That is, an opening 10r having a shape corresponding to the organic material layer 4 is formed in the photomask 10I, and the photoresist 20 in a region corresponding to the opening 10r is selectively exposed to ultraviolet rays.

Next, as shown in FIG. 17B, each portion of the gate insulating film 3 is exposed by developing the photoresist 20 using an alkali developer. At this time, the photoresist 20 is developed into a pattern (reversal pattern) obtained by reversing the pattern of the organic material layer 4 to be formed.
Next, as shown in FIG. 17C, the entire surface is exposed to ultraviolet rays, and all of the photoresist 20 on the substrate 36 is exposed to ultraviolet rays.

Next, as shown in FIG. 17D, an organic material layer 4 (first material layer) is deposited on the entire surface, and as shown in FIG. 17E, the photoresist 20 is dissolved using an alkali developer. Thereby, the unnecessary part of the organic material layer 4 is lifted off.
Next, as shown in FIG. 17F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.
Next, in this state, as shown in FIG. 18G, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

  Next, after performing an appropriate baking process with respect to the photoresist 9, as shown to FIG. 18H, the photomask 10J is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, an opening 10s having a shape corresponding to the electrode 5 is formed in the photomask 10J, and the photoresist 9 in a region corresponding to the opening 10s is selectively exposed to ultraviolet rays (selective exposure step). As a result, the portion of the photoresist 9 corresponding to the opening 10s is chemically changed to a property soluble in an alkaline developer.

Next, as shown in FIG. 18I, the organic material layer 4 in the region where the electrode 5 is to be formed is exposed by developing the photoresist 9 using an alkali developer such as TMAH (tetramethylammonium hydroxide). (Development process).
Next, as shown in FIG. 18J, the entire surface is exposed to ultraviolet rays, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

Next, as shown in FIG. 18K, an electrode 5 (second material layer), which is a metal layer, is deposited on the entire surface. Further, as shown in FIG. 18L, the photoresist 9 is dissolved using an alkaline developer. It is done. Thereby, the unnecessary part of the electrode 5 is lifted off together with the photoresist 9 (lift-off process).
Next, as shown in FIG. 18M, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.

Next, in this state, as shown in FIG. 19N, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.
Next, after performing an appropriate baking process with respect to the photoresist 9, as shown in FIG. 19O, the photomask 10K is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, an opening 10t having a shape corresponding to the electrode 6 is formed in the photomask 10K, and the photoresist 9 in a region corresponding to the opening 10t is selectively exposed to ultraviolet rays (selective exposure step). Thereby, the part corresponding to the opening 10t of the photoresist 9 is chemically changed to a property soluble in the alkaline developer.

Next, as shown in FIG. 19P, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), thereby exposing the organic material layer 4 in the region where the electrode 6 is to be formed. (Development process).
Next, as shown in FIG. 19Q, the entire surface is exposed to ultraviolet light, and all the photoresist 9 remaining on the substrate is exposed to ultraviolet light (all resist exposure process).

  Next, as shown in FIG. 19R, an electrode 6 that is a metal layer is deposited on the entire surface. Here, as the material of the electrode 6, a material different from the material used for vapor deposition of the electrode 5 is used. For example, the electrode 5 is made of gold (Au), and the electrode 6 is made of calcium (Ca). Further, when a material that easily reacts with an alkaline developer, for example, aluminum (Al) is used as the material of the electrode 6, the electrode 6 reacts with the alkaline developer at the final lift-off (see FIG. 19S), and the thickness of the electrode May become thinner. Therefore, when using such a material, it vapor-deposits, for example so that the thickness of the electrode 6 may become thicker than the electrode 5 (for example, the thickness difference h is provided).

Next, as shown in FIG. 19S, the photoresist 9 is dissolved using an alkali developer. Thereby, an unnecessary portion of the electrode 6 is lifted off together with the photoresist 9 (lift-off process), and the organic transistor 35 in which a plurality of electrodes made of different materials are formed is completed.
In this way, the action of the sacrificial layer 8 can avoid contact of the photoresist 9 diluted with an organic solvent with the organic material layer 4, so that the influence on the organic material layer 4 is suppressed or prevented, that is, organic A fine pattern of the electrodes 5 and 6 can be formed on the organic material layer 4 by photolithography without impairing the electrical characteristics of the material layer 4.

FIG. 20 is a schematic cross-sectional view for explaining the configuration of an organic material device to which the method according to the sixth embodiment of the present invention is applied. In FIG. 20, parts corresponding to those shown in FIGS. 6 and 12 are given the same reference numerals as those in FIGS. 6 and 12.
This organic material device is a composite integrated element 38 having an organic transistor and an organic EL.

  This composite integrated element 38 includes an organic transistor 32 shown in FIG. 12 and a red organic EL 22R shown in FIG. 6 at a predetermined interval on a substrate 39 (for example, a glass substrate or a plastic substrate). In addition, since it is necessary to take out the light which generate | occur | produces in red organic EL22R to the exterior as a material of the electrode 5 and the electrode 6, the transparent electrode material which is the same material as the signal electrode 23 mentioned above is used.

  FIGS. 21A to 21F, FIGS. 22G to 22K, FIGS. 23L to 23P, and FIGS. 24Q to 24S are schematic sectional views showing the method of manufacturing the composite integrated device of FIG. 21, 22, 23, and 24, the parts corresponding to the respective parts shown in FIGS. 7 to 11 and 13 to 15 are the same as those in FIGS. 7 to 11 and 13 to 15. The same reference numerals are attached and shown.

First, the steps of FIGS. 21A to 21E (the same steps as FIGS. 13A to 13D and 14E) are performed, and the organic material layer 4 is formed on the substrate 39.
Next, as shown in FIG. 21F, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.
Next, in this state, as shown in FIG. 22G, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.

  Next, after performing an appropriate baking process with respect to the photoresist 9, as shown to FIG. 22H, the photomask 10M is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, the photomask 10M has openings 10v and 10w having shapes corresponding to the electrodes 5 and 6 (23), respectively, and the photoresist 9 in the regions corresponding to the openings 10v and 10w is selectively formed. UV exposure (selective exposure process). As a result, the portions of the photoresist 9 corresponding to the openings 10v and 10w are chemically changed to a property soluble in an alkaline developer.

Next, as shown in FIG. 22I, the photoresist 9 is developed using an alkali developer, for example, TMAH (tetramethylammonium hydroxide), thereby forming an organic region in the region where the electrodes 5 and 6 (23) are to be formed. The material layer 4 and the gate insulating film 3 are exposed (development process).
Next, as shown in FIG. 22J, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

Next, as shown in FIG. 22K, electrodes 5 and 6 (23) are vapor-deposited on the entire surface. Further, as shown in FIG. 23L, the photoresist 9 is dissolved using an alkaline developer. Thereby, unnecessary portions of the electrodes 5 and 6 (23) are lifted off together with the photoresist 9 (lift-off process).
Next, as shown in FIG. 23M, a sacrificial layer 8 is formed on the entire surface including the organic material layer 4.

Next, in this state, as shown in FIG. 23N, a photoresist 9 is applied on the sacrificial layer 8. At this time, since the organic material layer 4 is protected by the sacrificial layer 8, contact between the organic material layer 4 and the photoresist 9 can be avoided. That is, the organic solvent in the photoresist 9 does not erode the organic material layer 4.
Next, after performing an appropriate baking process with respect to the photoresist 9, as shown in FIG. 23O, the photomask 10N is arrange | positioned above the board | substrate of this state, and the photoresist 9 is selectively exposed. That is, the opening 10x having a shape corresponding to the photomask 10N and the red organic layer 24R is formed, and the photoresist 9 in the region corresponding to the opening 10x is selectively exposed to ultraviolet rays (selective exposure step). Thereby, the part corresponding to the opening 10x of the photoresist 9 is chemically changed to a property soluble in the alkaline developer.

Next, as shown in FIG. 23P, the photoresist 9 is developed using an alkaline developer, for example, TMAH (tetramethylammonium hydroxide), whereby the electrode 6 (23 in the region where the red organic layer 24R is to be formed). ) Is exposed (development process).
Next, as shown in FIG. 24Q, the entire surface is exposed to ultraviolet rays, and all of the photoresist 9 remaining on the substrate is exposed to ultraviolet rays (total resist exposure step).

  Next, as shown in FIG. 24R, a hole transport layer 241, a red light emitting layer 242R and an electron transport layer 243 are continuously deposited on the entire surface while switching the deposition source, and the red organic layer is formed on the electrode 6 (23). 24R is formed to have a laminated structure. Then, the electron injection layer 25 and the scan electrode 26 are formed on the red organic layer 24R. Further, as shown in FIG. 24S, the photoresist 9 is dissolved using an alkaline developer. Thereby, an unnecessary portion of the red organic layer 24R is lifted off (lift-off process), and the composite integrated element 38 including the organic transistor and the organic EL is completed.

  In this way, the action of the sacrificial layer 8 can prevent the photoresist 9 diluted in the organic solvent from coming into contact with the organic material layer 4 and the red organic layer 24R, and thus has an influence on the organic material layer 4 and the red organic layer 24R. In other words, both the organic material layer 4 and the red organic layer 24R can be formed in a fine pattern by photolithography while suppressing or preventing the above, that is, without impairing the electrical characteristics of the organic material layer 4 and the red organic layer 24R. it can. Therefore, a high-definition composite integrated device can be realized.

In the above manufacturing method, the red organic EL 22R is formed as the organic EL 22. However, the green organic EL 22G and the blue organic EL 22B shown in FIG. 6 can be formed.
Although the embodiments of the present invention have been described above, the present invention can be implemented in other forms, and various design changes can be made within the scope of the matters described in the claims. is there.

  For example, a film made of TPD / Copper Phthalocyanine (CuPc) or the like can be formed as a protective film in order to planarize the surface of the organic material layer and prevent pinholes from being generated in the sacrificial layer.

It is sectional drawing which shows the structure of the organic material apparatus with which the method concerning 1st Embodiment of this invention is applied schematically. 2A to 2G are schematic cross-sectional views illustrating the method of manufacturing the organic transistor of FIG. 1 in the order of steps. It is an illustration sectional view for explaining the composition of the organic material device to which the method concerning a 2nd embodiment of this invention is applied. 4A to 4F are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps. 5G to 5L are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 3 in the order of steps. It is an illustration sectional view for explaining the composition of the organic material device to which the method concerning a 3rd embodiment of this invention is applied. 7A to 7E are schematic cross-sectional views showing a method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps. 8F to 8I are schematic cross-sectional views showing a method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps. 9J to 9M are schematic cross-sectional views showing the method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps. 10N to 10Q are schematic cross-sectional views showing a method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps. 11R to 11U are schematic cross-sectional views showing a method of manufacturing the RGB light emitting device of FIG. 6 in the order of steps. It is an illustration sectional view for explaining the composition of the organic material device to which the method concerning a 4th embodiment of this invention is applied. 13A to 13D are schematic sectional views showing a method of manufacturing the organic transistor integrated circuit element of FIG. 14E to 14H are schematic sectional views showing the method of manufacturing the organic transistor integrated circuit element of FIG. 15I to 15L are schematic cross-sectional views showing the method of manufacturing the organic transistor integrated circuit element of FIG. It is an illustration sectional view for explaining the composition of the organic material device to which the method concerning a 5th embodiment of this invention is applied. 17A to 17F are schematic cross-sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps. 18G to 18M are schematic sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps. 19N to 19S are schematic cross-sectional views showing the method of manufacturing the organic transistor of FIG. 16 in the order of steps. It is an illustration sectional view for explaining the composition of the organic material device to which the method concerning a 6th embodiment of this invention is applied. 21A to 21F are schematic sectional views showing the method of manufacturing the composite integrated device of FIG. 20 in the order of steps. 22G to 22K are schematic sectional views showing the method of manufacturing the composite integrated device of FIG. 20 in the order of steps. 23L to 23P are schematic cross-sectional views illustrating the method of manufacturing the composite integrated device of FIG. 20 in the order of steps. 24Q to 24S are schematic sectional views showing the method of manufacturing the composite integrated device of FIG. 20 in the order of steps.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Organic transistor 4 Organic material layer 5 Electrode 6 Electrode 8 Sacrificial layer 9 Photoresist 10 Photomask 11 Substrate 16P Electrode 16N Electrode 17 Electrode 18 P type organic semiconductor layer 19 N type organic semiconductor layer 21 Substrate 24 Organic layer 29 Organic transistor integrated circuit Element 30 RGB light emitting element 31 Organic transistor integrated circuit element 33 Substrate 35 Organic transistor 36 Substrate 38 Composite integrated device 39 Substrate

Claims (9)

Forming a sacrificial layer made of an inorganic material on a first material layer made of an organic material formed on a substrate;
Forming a resist in a region on the substrate including on the sacrificial layer;
A selective exposure step of selectively exposing the resist to a predetermined pattern;
A developing process comprising an aqueous solution capable of dissolving the sacrificial layer, a developing process for dissolving the resist portion exposed in the selective exposure process and the sacrificial layer directly thereunder;
Forming a second material layer on the substrate after the development step;
The second material layer on the resist is lifted off by patterning the second material layer by dissolving the resist and the sacrificial layer directly therebelow with a developer composed of an aqueous solution capable of dissolving the sacrificial layer. A manufacturing method of an organic material device including a lift-off process. Further comprising exposing a resist of an unexposed portion remaining on the substrate after the developing step, and chemically changing the resist to a property soluble in a developer used in the lift-off step,
The method of manufacturing an organic material device according to claim 1, wherein a step of forming the second material layer is performed after the entire resist exposure step.   The method for producing an organic material device according to claim 1, wherein the developer used in the developing step and the lift-off step is an alkaline aqueous solution.   The manufacturing method of the organic material apparatus as described in any one of Claims 1-3 whose said sacrificial layer is a metal layer.   The manufacturing method of the organic material apparatus as described in any one of Claims 1-4 whose said 1st material layer is an organic-semiconductor material layer.   The method for manufacturing an organic material device according to claim 1, wherein the second material layer includes a metal layer.   The method for manufacturing an organic material device according to any one of claims 1 to 6, wherein the second material layer includes an organic material layer of a different type from the organic material layer constituting the first material layer.   The manufacturing method of the organic material apparatus as described in any one of Claims 1-7 with which the said 1st material layer has the laminated structure of a some organic material layer.   The method for manufacturing an organic material device according to claim 1, wherein the second material layer has a stacked structure of a plurality of organic material layers.

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