KR101441858B1 - 서셉터를 러프닝함으로써 정전하를 감소시키는 장치 - Google Patents

서셉터를 러프닝함으로써 정전하를 감소시키는 장치 Download PDF

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Publication number
KR101441858B1
KR101441858B1 KR1020060065971A KR20060065971A KR101441858B1 KR 101441858 B1 KR101441858 B1 KR 101441858B1 KR 1020060065971 A KR1020060065971 A KR 1020060065971A KR 20060065971 A KR20060065971 A KR 20060065971A KR 101441858 B1 KR101441858 B1 KR 101441858B1
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KR
South Korea
Prior art keywords
substrate support
substrate
support surface
microinches
aluminum
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Application number
KR1020060065971A
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English (en)
Korean (ko)
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KR20070009450A (ko
Inventor
수영 최
범수 박
쿠안유안 상
존 엠. 화이트
동길 임
정희 박
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from US11/182,168 external-priority patent/US8372205B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20070009450A publication Critical patent/KR20070009450A/ko
Application granted granted Critical
Publication of KR101441858B1 publication Critical patent/KR101441858B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020060065971A 2005-07-15 2006-07-13 서셉터를 러프닝함으로써 정전하를 감소시키는 장치 KR101441858B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/182,168 US8372205B2 (en) 2003-05-09 2005-07-15 Reducing electrostatic charge by roughening the susceptor
US11/182,168 2005-07-15

Publications (2)

Publication Number Publication Date
KR20070009450A KR20070009450A (ko) 2007-01-18
KR101441858B1 true KR101441858B1 (ko) 2014-09-19

Family

ID=37610096

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060065971A KR101441858B1 (ko) 2005-07-15 2006-07-13 서셉터를 러프닝함으로써 정전하를 감소시키는 장치

Country Status (4)

Country Link
JP (1) JP5361119B2 (ja)
KR (1) KR101441858B1 (ja)
CN (1) CN1897784B (ja)
TW (1) TWI375295B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114373A (ko) 2018-03-30 2019-10-10 (주)티티에스 유리 기판 지지용 서셉터

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100927509B1 (ko) * 2007-05-23 2009-11-17 어플라이드 머티어리얼스, 인코포레이티드 태양 전지 분야의 사용에 적합한 레이저 스크라이빙 처리된 투과 도전성 산화물 층 위에 실리콘 층을 증착하는 방법
KR100938874B1 (ko) * 2007-07-24 2010-01-27 주식회사 에스에프에이 유리기판 지지용 서셉터 및 그 제조 방법, 그리고 그유리기판 지지용 서셉터를 구비한 화학 기상 증착장치
CN102233580A (zh) * 2010-05-06 2011-11-09 日月光半导体制造股份有限公司 吸嘴及自动搬运装置
CN102842636B (zh) * 2011-06-20 2015-09-30 理想能源设备(上海)有限公司 用于化学气相沉积系统的基板加热基座
TWI477630B (zh) * 2011-10-18 2015-03-21 Au Optronics Corp 薄膜沈積機台及其承載件
CN111485226A (zh) * 2012-07-27 2020-08-04 应用材料公司 粗糙化的基板支撑件
CN103151235B (zh) * 2013-02-20 2016-01-27 上海华力微电子有限公司 一种提高刻蚀均匀性的装置
CN105407620A (zh) * 2015-12-14 2016-03-16 重庆瑞阳科技股份有限公司 导静电装置
CN107393803A (zh) * 2017-07-28 2017-11-24 武汉华星光电技术有限公司 用于干蚀刻机台的下电极结构及干蚀刻机台
KR20210128064A (ko) * 2020-04-16 2021-10-26 주식회사 제우스 기판 처리용 통전장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189695A (ja) * 1996-12-24 1998-07-21 Toshiba Ceramics Co Ltd 気相成長用サセプタ及びその製造方法
JPH10340896A (ja) * 1997-06-06 1998-12-22 Nippon Asm Kk プラズマｃｖｄ装置用サセプタ及びその製造方法
JP2002261157A (ja) 2001-02-27 2002-09-13 Kyocera Corp 静電チャック及び処理装置
KR20040096785A (ko) * 2003-05-09 2004-11-17 어플라이드 머티어리얼스, 인코포레이티드 양극처리된 기판 지지부

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
TWI272689B (en) * 2001-02-16 2007-02-01 Tokyo Electron Ltd Method and apparatus for transferring heat from a substrate to a chuck

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10189695A (ja) * 1996-12-24 1998-07-21 Toshiba Ceramics Co Ltd 気相成長用サセプタ及びその製造方法
JPH10340896A (ja) * 1997-06-06 1998-12-22 Nippon Asm Kk プラズマｃｖｄ装置用サセプタ及びその製造方法
JP2002261157A (ja) 2001-02-27 2002-09-13 Kyocera Corp 静電チャック及び処理装置
KR20040096785A (ko) * 2003-05-09 2004-11-17 어플라이드 머티어리얼스, 인코포레이티드 양극처리된 기판 지지부

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190114373A (ko) 2018-03-30 2019-10-10 (주)티티에스 유리 기판 지지용 서셉터

Also Published As

Publication number Publication date
JP5361119B2 (ja) 2013-12-04
KR20070009450A (ko) 2007-01-18
CN1897784B (zh) 2011-04-13
JP2007051367A (ja) 2007-03-01
TWI375295B (en) 2012-10-21
CN1897784A (zh) 2007-01-17
TW200707627A (en) 2007-02-16

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