KR101440652B1 - 마이크로리소그래피 투영 노광 장치의 조명 시스템 - Google Patents

마이크로리소그래피 투영 노광 장치의 조명 시스템 Download PDF

Info

Publication number
KR101440652B1
KR101440652B1 KR1020097017904A KR20097017904A KR101440652B1 KR 101440652 B1 KR101440652 B1 KR 101440652B1 KR 1020097017904 A KR1020097017904 A KR 1020097017904A KR 20097017904 A KR20097017904 A KR 20097017904A KR 101440652 B1 KR101440652 B1 KR 101440652B1
Authority
KR
South Korea
Prior art keywords
filter
field
transmittance
plane
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097017904A
Other languages
English (en)
Korean (ko)
Other versions
KR20090129409A (ko
Inventor
닐스 디크만
만프레드 마울
크리스티안 헤티히
올리버 나트
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20090129409A publication Critical patent/KR20090129409A/ko
Application granted granted Critical
Publication of KR101440652B1 publication Critical patent/KR101440652B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020097017904A 2007-01-30 2008-01-30 마이크로리소그래피 투영 노광 장치의 조명 시스템 Expired - Fee Related KR101440652B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88718607P 2007-01-30 2007-01-30
US60/887,186 2007-01-30
PCT/EP2008/000706 WO2008092653A2 (en) 2007-01-30 2008-01-30 Illumination system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
KR20090129409A KR20090129409A (ko) 2009-12-16
KR101440652B1 true KR101440652B1 (ko) 2014-09-22

Family

ID=39672917

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097017904A Expired - Fee Related KR101440652B1 (ko) 2007-01-30 2008-01-30 마이크로리소그래피 투영 노광 장치의 조명 시스템

Country Status (6)

Country Link
US (2) US8169594B2 (enExample)
EP (1) EP2126636B1 (enExample)
JP (1) JP2010517310A (enExample)
KR (1) KR101440652B1 (enExample)
CN (1) CN101636695B (enExample)
WO (1) WO2008092653A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599936B2 (ja) 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
KR100865554B1 (ko) * 2007-06-27 2008-10-29 주식회사 하이닉스반도체 노광 장치
US8908151B2 (en) 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
DE102008011501A1 (de) 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
JP5201061B2 (ja) * 2008-04-29 2013-06-05 株式会社ニコン 補正フィルター、照明光学系、露光装置、およびデバイス製造方法
US8237684B2 (en) * 2008-09-26 2012-08-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. User input device with planar light guide illumination plate
KR101960153B1 (ko) * 2008-12-24 2019-03-19 가부시키가이샤 니콘 조명 광학계, 노광 장치 및 디바이스의 제조 방법
JP5187631B2 (ja) * 2008-12-30 2013-04-24 株式会社ニコン 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP5187632B2 (ja) * 2008-12-30 2013-04-24 株式会社ニコン 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP5473350B2 (ja) 2009-02-13 2014-04-16 キヤノン株式会社 照明光学系、露光装置及びデバイスの製造方法
DE102012219806A1 (de) * 2012-10-30 2014-04-30 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Mittel zur Reduktion des Einflusses von Druckschwankungen
DE102013206528B4 (de) 2013-04-12 2014-11-20 Carl Zeiss Smt Gmbh Mikrolithographische projektionsbelichtungsanlage mit einem variablen transmissionsfilter
DE102013208129B4 (de) 2013-05-03 2014-11-20 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage mit einem variablen Transmissionsfilter
CN103293877B (zh) * 2013-05-31 2014-12-31 上海华力微电子有限公司 采用四极曝光方式的光刻装置、通光单元及光刻方法
GB2540654A (en) * 2015-05-13 2017-01-25 Zeiss Carl Smt Gmbh Method of variably attenuating a beam of projection light in an optical system of a microlithographic apparatus
WO2018029962A1 (ja) 2016-08-08 2018-02-15 ソニー株式会社 内視鏡装置及び内視鏡装置の制御方法
PT3642674T (pt) 2017-06-19 2023-05-02 Suss Microtec Solutions Gmbh & Co Kg Compensação de ampliação e/ou direcionamento de feixe em sistemas óticos
US11175487B2 (en) 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
JP7413234B2 (ja) * 2020-11-06 2024-01-15 株式会社東芝 光学撮像装置、光学検査装置、および、光学検査方法
JP7680878B2 (ja) * 2021-05-07 2025-05-21 キヤノン株式会社 照明光学系、露光装置、および物品の製造方法
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1555573A2 (en) * 2003-12-31 2005-07-20 ASML Netherlands BV Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
WO2005119369A1 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag Projection system with compensation of intensity variatons and compensation element therefor
WO2006018972A1 (ja) 2004-08-17 2006-02-23 Nikon Corporation 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
WO2006066638A1 (en) 2004-12-23 2006-06-29 Carl Zeiss Smt Ag A filter device for the compensation of an asymmetric pupil illumination

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
JPH09199390A (ja) 1996-01-16 1997-07-31 Hitachi Ltd パターン形成方法、投影露光装置および半導体装置の製造方法
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
JPH11176746A (ja) * 1997-10-07 1999-07-02 Nikon Corp 走査型露光方法、装置及び素子製造方法
US6013401A (en) 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
EP0952491A3 (en) 1998-04-21 2001-05-09 Asm Lithography B.V. Lithography apparatus
JP4545854B2 (ja) * 1999-11-05 2010-09-15 キヤノン株式会社 投影露光装置
DE10043315C1 (de) 2000-09-02 2002-06-20 Zeiss Carl Projektionsbelichtungsanlage
DE10046218B4 (de) * 2000-09-19 2007-02-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
DE10065198A1 (de) * 2000-12-20 2002-07-11 Zeiss Carl Lichtintegrator für eine Beleuchtungseinrichtung
WO2003023832A1 (en) * 2001-09-07 2003-03-20 Nikon Corporation Exposure method and system, and device production method
JP4923370B2 (ja) 2001-09-18 2012-04-25 株式会社ニコン 照明光学系、露光装置、及びマイクロデバイスの製造方法
DE10158921A1 (de) 2001-11-30 2003-06-26 Zeiss Carl Smt Ag Verfahren zum Bestimmen von mindestens einer Kenngröße, die für die Beleuchtungswinkelverteilung einer der Beleuchtung eines Gegenstandes dienenden Lichtquelle einer Projektionsbelichtungsanlage charakteristisch ist
WO2005006079A1 (de) 2003-07-07 2005-01-20 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
KR100598095B1 (ko) * 2003-07-10 2006-07-07 삼성전자주식회사 노광 장치
US20060268251A1 (en) * 2003-07-16 2006-11-30 Markus Deguenther Illumination system for a microlithographic projection exposure apparatus
DE102004011733A1 (de) * 2004-03-04 2005-09-22 Carl Zeiss Smt Ag Transmissionsfiltervorrichtung
US7283209B2 (en) * 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
JP2006066429A (ja) * 2004-08-24 2006-03-09 Nikon Corp 照明光学装置、露光装置、および露光方法
JP5030944B2 (ja) 2005-04-26 2012-09-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ露光装置のための照明システム
DE102006013459A1 (de) 2006-03-23 2007-09-27 Infineon Technologies Ag Anordnung zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat und Verfahren zur Übertragung von Strukturelementen einer Photomaske auf ein Substrat

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1555573A2 (en) * 2003-12-31 2005-07-20 ASML Netherlands BV Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
WO2005119369A1 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag Projection system with compensation of intensity variatons and compensation element therefor
WO2006018972A1 (ja) 2004-08-17 2006-02-23 Nikon Corporation 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
WO2006066638A1 (en) 2004-12-23 2006-06-29 Carl Zeiss Smt Ag A filter device for the compensation of an asymmetric pupil illumination

Also Published As

Publication number Publication date
KR20090129409A (ko) 2009-12-16
CN101636695B (zh) 2012-06-06
JP2010517310A (ja) 2010-05-20
CN101636695A (zh) 2010-01-27
EP2126636A2 (en) 2009-12-02
US9116441B2 (en) 2015-08-25
WO2008092653A2 (en) 2008-08-07
WO2008092653A3 (en) 2008-10-09
US20120188527A1 (en) 2012-07-26
EP2126636B1 (en) 2012-06-13
US20090323043A1 (en) 2009-12-31
US8169594B2 (en) 2012-05-01

Similar Documents

Publication Publication Date Title
KR101440652B1 (ko) 마이크로리소그래피 투영 노광 장치의 조명 시스템
JP6343344B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP5068271B2 (ja) マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
US8279405B2 (en) Lithographic apparatus and device manufacturing method
US7333178B2 (en) Lithographic apparatus and device manufacturing method
JP5077724B2 (ja) マイクロリソグラフィツール用の反射照明システム
US9665010B2 (en) Method for operating a microlithographic projection exposure apparatus
TW201702756A (zh) 微影投射設備的操作方法
US9030645B2 (en) Illumination optical system, exposure apparatus, and exposure method
US6738128B2 (en) Exposure apparatus
US7385672B2 (en) Exposure apparatus and method
US8947635B2 (en) Illumination optical system, exposure apparatus, and device manufacturing method
JP2008283178A (ja) リソグラフィ装置および方法
KR20170114976A (ko) 투영 노광 방법 및 투영 노광 장치
TW201510674A (zh) 微影設備及改變光輻射分佈的方法
TWI444779B (zh) 微影蝕刻的投影曝光儀器之照明系統
JP5453804B2 (ja) 照明光学系、露光装置及びデバイスの製造方法
WO2010073801A1 (ja) 照明光学系、露光装置及びデバイスの製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170825

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180823

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200905

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200905