KR101430169B1 - 비휘발성 메모리 소자의 프로그램 방법 - Google Patents

비휘발성 메모리 소자의 프로그램 방법 Download PDF

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Publication number
KR101430169B1
KR101430169B1 KR1020080071896A KR20080071896A KR101430169B1 KR 101430169 B1 KR101430169 B1 KR 101430169B1 KR 1020080071896 A KR1020080071896 A KR 1020080071896A KR 20080071896 A KR20080071896 A KR 20080071896A KR 101430169 B1 KR101430169 B1 KR 101430169B1
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KR
South Korea
Prior art keywords
voltage
memory cell
pulse
verify
program
Prior art date
Application number
KR1020080071896A
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English (en)
Korean (ko)
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KR20090027140A (ko
Inventor
설광수
박상진
최기환
성정헌
최상무
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to JP2008232639A priority Critical patent/JP2009070549A/ja
Priority to US12/232,082 priority patent/US7760551B2/en
Priority to CN200810213560XA priority patent/CN101388252B/zh
Publication of KR20090027140A publication Critical patent/KR20090027140A/ko
Application granted granted Critical
Publication of KR101430169B1 publication Critical patent/KR101430169B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020080071896A 2007-09-11 2008-07-23 비휘발성 메모리 소자의 프로그램 방법 KR101430169B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008232639A JP2009070549A (ja) 2007-09-11 2008-09-10 不揮発性メモリ素子のプログラム方法
US12/232,082 US7760551B2 (en) 2007-09-11 2008-09-10 Method of programming nonvolatile memory device
CN200810213560XA CN101388252B (zh) 2007-09-11 2008-09-11 编程非易失性存储装置的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070092292 2007-09-11
KR20070092292 2007-09-11

Publications (2)

Publication Number Publication Date
KR20090027140A KR20090027140A (ko) 2009-03-16
KR101430169B1 true KR101430169B1 (ko) 2014-08-14

Family

ID=40477600

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080071896A KR101430169B1 (ko) 2007-09-11 2008-07-23 비휘발성 메모리 소자의 프로그램 방법

Country Status (2)

Country Link
KR (1) KR101430169B1 (zh)
CN (1) CN101388252B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5091999B2 (ja) * 2010-09-24 2012-12-05 シャープ株式会社 半導体記憶装置
CN102623059B (zh) * 2011-01-26 2015-10-28 中国科学院微电子研究所 一种半导体存储器件的复位方法
KR101429620B1 (ko) * 2014-03-27 2014-08-14 연세대학교 산학협력단 메모리 프로그래밍 방법 및 메모리 프로그래밍 장치
CN110838321A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 一种存储器的编程方法和系统
CN110838325A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 一种存储器的编程方法和系统
US11526739B2 (en) * 2019-09-05 2022-12-13 SK Hynix Inc. Nonvolatile memory device performing a multiplication and accumulation operation
KR102508118B1 (ko) * 2021-11-15 2023-03-08 삼성전자주식회사 스토리지 장치 및 그 동작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080183951A1 (en) 2007-01-25 2008-07-31 Byeong Hoon Lee Flash Memory Device and Program Method Thereof
US7606072B2 (en) 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614693B1 (en) * 2002-03-19 2003-09-02 Taiwan Semiconductor Manufacturing Company Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
US20040130942A1 (en) * 2003-01-02 2004-07-08 Macronix International Co., Ltd. Data retention for a localized trapping non-volatile memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080183951A1 (en) 2007-01-25 2008-07-31 Byeong Hoon Lee Flash Memory Device and Program Method Thereof
US7606072B2 (en) 2007-04-24 2009-10-20 Sandisk Corporation Non-volatile storage with compensation for source voltage drop

Also Published As

Publication number Publication date
CN101388252B (zh) 2013-04-17
CN101388252A (zh) 2009-03-18
KR20090027140A (ko) 2009-03-16

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