KR101423723B1 - 발광 다이오드 패키지 - Google Patents

발광 다이오드 패키지 Download PDF

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Publication number
KR101423723B1
KR101423723B1 KR1020070108687A KR20070108687A KR101423723B1 KR 101423723 B1 KR101423723 B1 KR 101423723B1 KR 1020070108687 A KR1020070108687 A KR 1020070108687A KR 20070108687 A KR20070108687 A KR 20070108687A KR 101423723 B1 KR101423723 B1 KR 101423723B1
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KR
South Korea
Prior art keywords
light emitting
layer
light
emitting cells
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070108687A
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English (en)
Korean (ko)
Other versions
KR20090043058A (ko
Inventor
김대원
갈대성
Original Assignee
서울바이오시스 주식회사
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Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020070108687A priority Critical patent/KR101423723B1/ko
Priority to US12/174,054 priority patent/US8507923B2/en
Priority to JP2008188714A priority patent/JP2009111339A/ja
Priority to TW097128685A priority patent/TWI381516B/zh
Publication of KR20090043058A publication Critical patent/KR20090043058A/ko
Application granted granted Critical
Publication of KR101423723B1 publication Critical patent/KR101423723B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020070108687A 2007-10-29 2007-10-29 발광 다이오드 패키지 Expired - Fee Related KR101423723B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020070108687A KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지
US12/174,054 US8507923B2 (en) 2007-10-29 2008-07-16 Light emitting diode package
JP2008188714A JP2009111339A (ja) 2007-10-29 2008-07-22 発光ダイオードパッケージ
TW097128685A TWI381516B (zh) 2007-10-29 2008-07-29 發光二極體封裝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070108687A KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020140063162A Division KR101547322B1 (ko) 2014-05-26 2014-05-26 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
KR20090043058A KR20090043058A (ko) 2009-05-06
KR101423723B1 true KR101423723B1 (ko) 2014-08-04

Family

ID=40582209

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070108687A Expired - Fee Related KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지

Country Status (4)

Country Link
US (1) US8507923B2 (https=)
JP (1) JP2009111339A (https=)
KR (1) KR101423723B1 (https=)
TW (1) TWI381516B (https=)

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US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
KR101114592B1 (ko) 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
KR100986570B1 (ko) 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWM388109U (en) * 2009-10-15 2010-09-01 Intematix Tech Center Corp Light emitting diode apparatus
KR101163838B1 (ko) * 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
KR101114151B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
TWI533483B (zh) 2010-08-09 2016-05-11 Ｌｇ伊諾特股份有限公司 發光裝置
TWI479641B (zh) * 2010-09-20 2015-04-01 英特明光能股份有限公司 發光元件及其製作方法
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
KR20130019276A (ko) * 2011-08-16 2013-02-26 엘지이노텍 주식회사 발광소자
TWI484673B (zh) * 2012-08-22 2015-05-11 華夏光股份有限公司 半導體發光裝置
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
KR101582494B1 (ko) * 2014-05-13 2016-01-19 (주)포인트엔지니어링 칩 실장용 기판 및 칩이 실장된 칩 패키지
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
EP3831911B1 (en) * 2019-12-05 2022-06-08 Friedrich-Alexander-Universität Erlangen-Nürnberg Composite wavelength converter
KR102810913B1 (ko) 2020-10-20 2025-05-23 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
US12610858B2 (en) 2021-05-14 2026-04-21 Seoul Viosys Co., Ltd. Light emitting module and display apparatus having the same

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JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

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US5187377A (en) * 1988-07-15 1993-02-16 Sharp Kabushiki Kaisha LED array for emitting light of multiple wavelengths
JPH0467360U (https=) * 1990-10-24 1992-06-15
US5808592A (en) * 1994-04-28 1998-09-15 Toyoda Gosei Co., Ltd. Integrated light-emitting diode lamp and method of producing the same
JP3505374B2 (ja) * 1997-11-14 2004-03-08 三洋電機株式会社 発光部品
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ｌｅｄランプ
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP2004055772A (ja) * 2002-07-18 2004-02-19 Citizen Electronics Co Ltd Ｌｅｄ発光装置
EP1892764B1 (en) 2002-08-29 2016-03-09 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
EP1649514B1 (en) * 2003-07-30 2014-01-01 Panasonic Corporation Semiconductor light emitting device, light emitting module, and lighting apparatus
EP1676076A2 (en) * 2003-08-29 2006-07-05 Koninklijke Philips Electronics N.V. Color-mixing lighting system
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
US20060124943A1 (en) * 2004-12-14 2006-06-15 Elite Optoelectronics Inc. Large-sized light-emitting diodes with improved light extraction efficiency
JP2007036041A (ja) * 2005-07-28 2007-02-08 Sony Corp 発光装置及び光学装置
EP1949765B1 (en) * 2005-11-18 2017-07-12 Cree, Inc. Solid state lighting panels with variable voltage boost current sources

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

Also Published As

Publication number Publication date
US8507923B2 (en) 2013-08-13
TW200919701A (en) 2009-05-01
TWI381516B (zh) 2013-01-01
US20090109151A1 (en) 2009-04-30
KR20090043058A (ko) 2009-05-06
JP2009111339A (ja) 2009-05-21

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